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1. 发明授权

US5708674A Semiconductor laser or array formed by layer intermixing 失效
标题翻译：半导体激光器或由层间混合形成的阵列
公开(公告)号：US5708674A
公开(公告)日：1998-01-13
申请号：US367554
申请日：1995-01-03
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effectively inactivating quantum wells which have transition wavelengths longer than that desired in the selected portion of the device. The quantum wells are inactivated by intermixing them with the surrounding high band gap semiconductor layers. To accomplish this intermixing without affecting the active layer in nearby regions, a finite source of impurity inducing or promoting intermixing is located in proximity to the quantum well to be intermixed, and the sample is annealed under conditions which allow for lateral patterning of the impurity-induced intermixing. Alternatively, the body is capped over the quantum well to be inactivated with a material which induces vacancies in semi-conductive material during thermal annealing, thus promoting vacancy-enhanced intermixing of the undesired quantum well. The intermixing can also be brought about by patterned annealing or selective laser heating which produces local annealing, or by use of two different caps. For the index-guided laser diode, the flanking index-guiding regions are formed by IILD from a buried impurity source, in which surface conditions are controlled to promote impurity diffusion to the flanking regions but not to the active stripe region between the flanking regions.
摘要翻译：用于由IILD或包含具有量子阱的堆叠半导电有源层的多波长激光器阵列形成的折射率引导激光二极管的制造工艺和若干结构。通过有效地使具有比器件所选部分中所需要的转换波长更长的量子阱来激活激光波长。量子阱通过将它们与周围的高带隙半导体层混合而失活。为了实现这种混合而不影响附近区域中的有源层，杂质诱导或促进混合的有限源位于量子阱附近，以便混合，并且样品在允许杂质 - 诱导混合。或者，通过在热退火期间在半导电材料中引起空位的材料将物体盖在量子阱上以使其失活，从而促进不期望的量子阱的空位增强的混合。混合还可以通过图案化退火或选择性激光加热产生局部退火，或通过使用两个不同的盖来实现。对于折射率引导激光二极管，侧翼引导区域由埋藏杂质源的IILD形成，其中控制表面条件以促进杂质扩散到侧翼区域而不是侧向区域之间的有源条纹区域。

2. 发明授权

US5766981A Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD 失效
标题翻译：具有选择性IILD的热处理，含磷或砷的半导体激光器
公开(公告)号：US5766981A
公开(公告)日：1998-06-16
申请号：US368676
申请日：1995-01-04
申请人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
发明人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
IPC分类号： H01L21/20 , H01L21/324 , H01S5/00 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/2275 , H01S5/3413 , H01S5/3414
摘要： Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.
摘要翻译： AlGaInP和AlGaAs异质结构的无缺陷杂质诱导激光无序化（IILD）的方法。使用磷掺杂或As掺杂膜，其中硅用作扩散源，氮化硅用作选择性IILD的屏障。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。扩散源膜的沉积优选在低压反应器中进行。还公开了通过添加预扩散退火步骤来减少或消除硅扩散到III-V半导体材料中的磷过压的方案。在混合过程中产生的缺陷也可以使用GaInP或GaInP / GaAs帽降低。

3. 发明授权

US5843802A Semiconductor laser formed by layer intermixing 失效
标题翻译：半导体激光由层间混合形成
公开(公告)号：US5843802A
公开(公告)日：1998-12-01
申请号：US923092
申请日：1997-09-04
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
摘要翻译：一种用于制造诸如激光器的多层半导体器件的方法，其使用杂质诱导或空穴增强的半导体层的混合来选择性地使器件中的量子阱区域失活。

4. 发明授权

US5745517A Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD) 失效
标题翻译：通过杂质诱导层紊乱（IILD）制造的AlGaInP激光二极管的替代掺杂
公开(公告)号：US5745517A
公开(公告)日：1998-04-28
申请号：US581691
申请日：1995-12-29
申请人： David P. Bour , Robert L. Thornton , Kevin J. Beernink
发明人： David P. Bour , Robert L. Thornton , Kevin J. Beernink
IPC分类号： H01S5/042 , H01S5/20 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/167
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/0422 , H01S5/2059 , H01S5/3054 , H01S5/3413 , H01S5/34326
摘要： The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.
摘要翻译：通过杂质诱导层失调（IILD）制造的AlGaInP半导体激光器中的半导体层的极性被反转以允许n掺杂。因此，衬底和有源层之间的包层和限制层将具有p型导电性。上约束，包层和接触层可以是n或p型导电性，其中由扩散区域形成的n扩散区域从接触层向下延伸到下包层。电极可以包括基底电极或横向电极。

5. 发明授权

US5717707A Index guided semiconductor laser diode with reduced shunt leakage currents 失效
标题翻译：具有降低分流漏电流的折射率半导体激光二极管
公开(公告)号：US5717707A
公开(公告)日：1998-02-10
申请号：US367549
申请日：1995-01-03
申请人： Kevin J. Beernink , David P. Bour , Thomas L. Paoli , Ross D. Bringans , Gregory J. Kovacs
发明人： Kevin J. Beernink , David P. Bour , Thomas L. Paoli , Ross D. Bringans , Gregory J. Kovacs
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/204 , H01S5/2059 , H01S5/227 , H01S5/3413
摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of AlInP, GaInP and AlGaInP heterostructures. Several techniques for reducing parasitic leakage current via the n-type IILD regions, are described. These include removing the upper portions of the material outside the laser stripe, which can be accomplished by wet or dry etching of the material in a self-aligned manner. As an alternative, after formation of the waveguide, appropriately doped layers are grown over the disordered and as-grown regions of the structure to contact the active waveguide and simultaneously block parasitic shunt current from the disordered regions. Another method provides shallow inset insulating regions to replace the n-type disordered regions at the vicinity of a cap layer used to reduce a current barrier.
摘要翻译：由AlInP，GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率半导体激光二极管。描述了通过n型IILD区域减少寄生漏电流的几种技术。这些包括去除激光条外部材料的上部，这可以通过以自对准的方式湿法或干蚀刻材料来实现。作为替代方案，在形成波导之后，在结构的无序和生长区域上生长适当掺杂的层以接触有源波导并同时阻挡来自无序区域的寄生并联电流。另一种方法提供浅插入绝缘区域来代替用于减少电流屏障的盖层附近的n型无序区域。

6. 发明授权

US5436193A Method of fabricating a stacked active region laser array 失效
标题翻译：制造层叠有源区激光阵列的方法
公开(公告)号：US5436193A
公开(公告)日：1995-07-25
申请号：US146752
申请日：1993-11-02
申请人： Kevin J. Beernink , Robert L. Thornton
发明人： Kevin J. Beernink , Robert L. Thornton
IPC分类号： H01S3/23 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40 , H01L21/20
CPC分类号： H01S5/4043 , H01S5/209 , H01S5/2275 , H01S5/32316 , H01S5/405 , H01S5/4087 , Y10S148/095
摘要： A method of fabricating monolithic arrays having closely spaced laser stripes which output laser beams with large, but well-controlled, wavelength separations. The method begins by depositing on a substrate a lower cladding layer and a plurality of stacked active regions with different bandgaps and which are separated by etch stop layers. The stacked active regions are stacked in order of decreasing energy bandgaps as one moves away from the substrate. One or more stacks are then formed by etching one or more active layers using a patterned mask and the etch stop layers such that the topmost active region that remains in each stack has a bandgap which corresponds to the desired laser beam color from that stack. An upper cladding layer is then grown over the exposed surfaces. Beneficially, a lateral confinement region is then created around the stacks (such as by using impurity-induced layer disordering). Finally, a capping layer and metallic contacts are added to each stack, and a common metallic contact is added to the substrate.
摘要翻译：一种制造具有紧密间隔的激光条纹的单片阵列的方法，其输出具有大但是良好控制的波长间隔的激光束。该方法开始于在衬底上沉积具有不同带隙的下包层和多个堆叠的有源区，并且由蚀刻停止层分隔开。堆叠的有源区域随着一个离开衬底移动而以能量带隙减小的顺序堆叠。然后通过使用图案化掩模和蚀刻停止层蚀刻一个或多个有源层来形成一个或多个堆叠，使得保留在每个堆叠中的最高有效区域具有对应于来自该堆叠层的所需激光束颜色的带隙。然后在暴露的表面上生长上覆层。有利的是，在堆叠周围（例如通过使用杂质诱导层紊乱）产生横向约束区域。最后，将覆盖层和金属触点添加到每个堆叠中，并且将常见的金属接触添加到衬底中。

7. 发明授权

US5386428A Stacked active region laser array for multicolor emissions 失效
标题翻译：用于多色发射的叠层有源区激光阵列
公开(公告)号：US5386428A
公开(公告)日：1995-01-31
申请号：US146651
申请日：1993-11-02
申请人： Robert L. Thornton , Kevin J. Beernink
发明人： Robert L. Thornton , Kevin J. Beernink
IPC分类号： H01S3/23 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/34 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4043 , H01S5/2059 , H01S5/209 , H01S5/2275 , H01S5/32316 , H01S5/3428 , H01S5/4087
摘要： Monolithic arrays having closely spaced laser stripes which output laser beams with large, but well-controlled, wavelength separations. The monolithic array uses a plurality of stacked active regions which are stacked in the order of decreasing energy bandgaps as one moves away from the substrate. Those active regions are separated by one or more thin etch stop layers. Between the bottom active regions and the substrate is a lower cladding layer, while over the topmost active region of each stack is an upper cladding layer. Beneficially, an electrical connection is made to each stack using a heavily doped capping layer/metallic contact above each stack and a metallic contact on the substrate (which is shared by all stacks). Lateral carrier and optical confinement is achieved using a confinement layer which surrounds each stack. Beneficially, that confinement layer is formed using layer induced disordering.
摘要翻译：具有紧密间隔的激光条纹的单片阵列，其输出具有大但是良好控制的波长间隔的激光束。单片阵列使用多个堆叠的有源区，当有一个离开衬底移动时，它们按照能量带隙减小的顺序层叠。这些有源区域被一个或多个薄的蚀刻停止层隔开。在底部有源区域和衬底之间是下部包层，而每个堆叠的最上面的有源区域是上部包层。有利的是，使用每个堆叠上方的重掺杂的覆盖层/金属接触层和衬底上的金属接触（由所有堆叠共享）对每个堆叠进行电连接。使用围绕每个堆叠的约束层实现侧向载流子和光限制。有利地，该限制层使用层诱导的无序形成。

8. 发明授权

US5764676A Transversely injected multiple wavelength diode laser array formed by layer disordering 失效
标题翻译：横向注入的多波长二极管激光阵列由层紊乱形成
公开(公告)号：US5764676A
公开(公告)日：1998-06-09
申请号：US721063
申请日：1996-09-26
申请人： Thomas L. Paoli , Kevin J. Beernink
发明人： Thomas L. Paoli , Kevin J. Beernink
IPC分类号： H01S5/227 , H01S5/40 , H01S3/19
CPC分类号： H01S5/405 , H01S2301/14 , H01S5/2275 , H01S5/4043 , H01S5/4087
摘要： This invention relates to a laser array which can produce at least two independently addressable laser beams, each of which has fully index-guided buried optical waveguides. Specifically, the array is formed by a two-step impurity disordering process, which simplifies the fabrication of laser arrays and optoelectronic integrated circuits.
摘要翻译：本发明涉及一种激光器阵列，其可以产生至少两个可独立寻址的激光束，每个激光束具有完全折射率的埋入光波导。具体地说，该阵列是通过两步杂质失调过程形成的，这简化了激光阵列和光电子集成电路的制造。

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