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1. 发明授权

US06912902B2 Bending beam accelerometer with differential capacitive pickoff 有权
标题翻译：具有差动电容式传感器的弯曲加速度计
公开(公告)号：US06912902B2
公开(公告)日：2005-07-05
申请号：US10400591
申请日：2003-03-26
申请人： David L. Malametz , Stephen F. Becka , Robert D. Horning
发明人： David L. Malametz , Stephen F. Becka , Robert D. Horning
IPC分类号： B81B3/00 , G01P15/08 , G01P15/125
CPC分类号： B81B3/0072 , B81B2201/0235 , G01P15/08 , G01P15/125 , G01P2015/0831
摘要： A low cost, pendulous, capacitive-sensing Micro Electro-Mechanical Systems (MEMS) accelerometer is provided. The accelerometer includes a pendulous proof mass, one or more securing pads, and one or more flexures coupled with the pendulous proof mass and the one or more securing pads. The flexures flex linearly with respect to motion of the pendulous proof mass. First and second capacitor plates are positioned relative to the pendulous proof mass for detecting motion of the proof mass according to a sensed difference in capacitance. One or more strain isolation beams are connected between the one or more flexures and the pendulous proof mass or the securing pads. The strain isolation beams protect the flexures from mechanical strain.
摘要翻译：提供了一种低成本，下摆的电容感应微机电系统（MEMS）加速度计。该加速度计包括防晕质量块，一个或多个固定垫，以及一个或多个弯曲件，其与防倒伏质量块和一个或多个固定垫结合。弯曲物相对于防倒体块的运动线性地弯曲。第一和第二电容器板相对于防倒伏质量定位，用于根据感测到的电容差来检测检验质量块的运动。一个或多个应变隔离梁连接在一个或多个挠曲件和防倒冲质量块或固定垫之间。应变隔离梁保护挠曲免受机械应变。

2. 发明授权

US09171964B2 Systems and methods for a three-layer chip-scale MEMS device 有权
标题翻译：用于三层芯片级MEMS器件的系统和方法
公开(公告)号：US09171964B2
公开(公告)日：2015-10-27
申请号：US13296642
申请日：2011-11-15
申请人： Robert D. Horning , Ryan Supino
发明人： Robert D. Horning , Ryan Supino
IPC分类号： H01L29/84 , B81B7/00
CPC分类号： H01L29/84 , B81B7/0032 , B81B7/0038 , B81B7/0074 , B81B7/0077 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81C2201/019 , H01L2224/48091 , H01L2924/00014
摘要： Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer.
摘要翻译：提供了一种用于微机电系统（MEMS）装置的系统和方法。在一个实施例中，系统包括第一外层和包括第一组MEMS器件的第一器件层，其中第一器件层接合到第一外层。该系统还包括第二外层和包括第二组MEMS器件的第二器件层，其中第二器件层结合到第二外层。此外，该系统包括具有第一侧和与第一侧相反的第二侧的中心层，其中第一侧接合到第一器件层，第二侧接合到第二器件层。

3. 发明授权

US08078401B2 Method of personal navigation using stride vectoring 有权
标题翻译：使用步幅矢量的个人导航方法
公开(公告)号：US08078401B2
公开(公告)日：2011-12-13
申请号：US12019368
申请日：2008-01-24
申请人： Ryan Supino , Robert D. Horning
发明人： Ryan Supino , Robert D. Horning
IPC分类号： G01C25/00 , G01C17/38 , G01C21/00
CPC分类号： G01C21/16 , G01S1/72 , G01S5/186 , G01S5/26
摘要： A method of error compensation for an inertial measurement unit is provided. The method comprises providing a first object including an inertial measurement unit, providing a second object proximal to the first object, and determining an initial position and orientation of the first object. A motion update is triggered for the inertial measurement unit when the second object is stationary with respect to a ground surface. At least one position vector is measured between the first object and the second object when the first object is in motion and the second object is stationary. A distance, direction, and orientation of the second object with respect to the first object are calculated using the at least one position vector. An error correction is then determined for the inertial measurement unit from the calculated distance, direction, and orientation of the second object with respect to the first object.
摘要翻译：提供了惯性测量单元的误差补偿方法。该方法包括提供包括惯性测量单元的第一对象，提供靠近第一对象的第二对象，以及确定第一对象的初始位置和取向。当第二物体相对于地面静止时，对于惯性测量单元触发运动更新。当第一物体运动并且第二物体静止时，在第一物体和第二物体之间测量至少一个位置矢量。使用至少一个位置矢量来计算第二对象相对于第一对象的距离，方向和方向。然后根据计算出的第二物体相对于第一物体的距离，方向和取向来确定惯性测量单元的纠错。

4. 发明申请

US20100320595A1 HYBRID HERMETIC INTERFACE CHIP 审中-公开
标题翻译：混合界面切片
公开(公告)号：US20100320595A1
公开(公告)日：2010-12-23
申请号：US12488847
申请日：2009-06-22
申请人： Robert D. Horning , Jeff A. Ridley
发明人： Robert D. Horning , Jeff A. Ridley
IPC分类号： H01L23/02 , H01L23/48 , H01L21/50
CPC分类号： B81B7/007 , B81C2203/019 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A hermetically sealed MEMS device package comprises a MEMS device platform, a hermetic interface chip, and an outer seal ring. The MEMS device platform includes a MEMS device surrounded by a continuous outer boundary wall with a top surface. The hermetic interface chip includes a glass substrate and at least one silicon mesa. The glass substrate includes at least one hole and has a lower surface with an inner portion surrounded by an outer portion. The at least one silicon mesa is bonded to the inner portion of the lower surface of the glass substrate, such that the at least one silicon mesa is aligned with the at least one hole in the glass substrate. The outer seal ring bonds the outer portion of the lower surface of the glass substrate to the top surface of the continuous outer boundary wall of the MEMS device platform.
摘要翻译：密封的MEMS器件封装包括MEMS器件平台，密封接口芯片和外部密封环。 MEMS器件平台包括由具有顶表面的连续外边界壁包围的MEMS器件。密封接口芯片包括玻璃基板和至少一个硅台面。玻璃基板包括至少一个孔，并且具有下表面，内部被外部包围。至少一个硅台面结合到玻璃基板的下表面的内部，使得至少一个硅台面与玻璃基板中的至少一个孔对准。外密封环将玻璃基板的下表面的外部部分结合到MEMS器件平台的连续外边界壁的顶表面。

5. 发明申请

US20100084752A1 SYSTEMS AND METHODS FOR IMPLEMENTING A WAFER LEVEL HERMETIC INTERFACE CHIP 审中-公开
标题翻译：实现水平线性界面芯片的系统和方法
公开(公告)号：US20100084752A1
公开(公告)日：2010-04-08
申请号：US12247368
申请日：2008-10-08
申请人： Robert D. Horning , David S. Willits
发明人： Robert D. Horning , David S. Willits
IPC分类号： H01L23/02 , H01L21/50
CPC分类号： B81B7/007 , B81B7/0038
摘要： Systems and methods for enabling hermetic sealing at the wafer level during fabrication of a microelectromechanical sensor (MEMS) device. The MEMS device has a specialized hermetic interface chip (HIC) that facilitates a stable hermetic sealing process. The HIC includes a plurality of vias in a substrate layer, a plurality of mesas having etched portions, a seal ring, a plurality of conductive leads on a first side of the HIC, and a plurality of conductive leads on a second side of the HIC. The plurality of conductive leads on the first side of the HIC feeds from the etched portions of the plurality of mesas through the plurality of vias in the substrate layer to the plurality of conductive leads on the second side of the HIC. The conductive leads are capable of connecting an external circuit to the MEMS device.
摘要翻译：用于在制造微机电传感器（MEMS）器件期间在晶片级进行气密密封的系统和方法。 MEMS器件具有专门的密封接口芯片（HIC），有助于稳定的气密密封过程。 HIC在衬底层中包括多个通孔，具有蚀刻部分的多个台面，密封环，HIC的第一侧上的多个导电引线以及HIC的第二侧上的多个导电引线。 HIC的第一侧上的多个导电引线从多个台面的蚀刻部分通过衬底层中的多个通孔馈送到HIC的第二侧上的多个导电引线。导电引线能够将外部电路连接到MEMS器件。

6. 发明申请

US20090073045A1 ULTRASONIC MULTILATERATION SYSTEM FOR STRIDE VECTORING 有权
标题翻译：超声波多通道系统
公开(公告)号：US20090073045A1
公开(公告)日：2009-03-19
申请号：US12019380
申请日：2008-01-24
申请人： Ryan Supino , Robert D. Horning
发明人： Ryan Supino , Robert D. Horning
IPC分类号： G01S3/02 , G01C21/00
CPC分类号： G01C21/00 , G01S1/72 , G01S5/186 , G01S5/26
摘要： A lateration system comprising at least one transmitter attached to a first object and configured to emit pulses, three or more receivers attached to at least one second object and configured to receive the pulses emitted by the transmitter, and a processor configured to process information received from the three or more receivers, and to generate a vector based on lateration. Lateration is one of multilateration and trilateration. The vector is used by the processor to constrain error growth in a navigation solution.
摘要翻译：一种后置系统，包括附接到第一对象并被配置为发射脉冲的至少一个发射器，连接到至少一个第二对象并被配置为接收由发射器发射的脉冲的三个或更多个接收器，以及被配置为处理从三个或更多个接收器，并且基于后一个生成向量。背景是多边和三边形之一。处理器使用该向量来限制导航解决方案中的错误增长。

7. 发明授权

US06946200B2 Methods for reducing the curvature in boron-doped silicon micromachined structures 失效
标题翻译：减少硼掺杂硅微加工结构中曲率的方法
公开(公告)号：US06946200B2
公开(公告)日：2005-09-20
申请号：US10334588
申请日：2002-12-30
申请人： Cleopatra Cabuz , Max C. Glenn , Francis M. Erdmann , Robert D. Horning
发明人： Cleopatra Cabuz , Max C. Glenn , Francis M. Erdmann , Robert D. Horning
IPC分类号： B81B3/00 , B81C1/00 , H01L21/308 , H01L29/84 , B32B9/00
CPC分类号： B81C1/00365 , B81C2201/0164 , Y10T428/21 , Y10T428/2495
摘要： Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.
摘要翻译：公开了具有减小的平面外曲率的硼掺杂硅层。这些层在顶部和底部表面附近具有基本相等的硼浓度。由于相反的浓度基本相等，所以层上的压缩应力基本平衡，从而导致具有减小的面外曲率的层。

8. 发明授权

US06816636B2 Tunable optical filter 有权
标题翻译：可调滤光片
公开(公告)号：US06816636B2
公开(公告)日：2004-11-09
申请号：US09953506
申请日：2001-09-12
申请人： Barrett E. Cole , Subash Krishnankutty , Robert D. Horning
发明人： Barrett E. Cole , Subash Krishnankutty , Robert D. Horning
IPC分类号： G02F1295
CPC分类号： G02B6/29361 , G01J3/26 , G02B6/29395 , G02F1/0147 , G02F1/015 , G02F1/21 , G02F2001/213 , G02F2203/055
摘要： A tunable filter having a top mirror, a bottom mirror, and one or more intervening layers. The one or more intervening layers preferably have a refractive index that changes with temperature. By heating the one or more intervening layers, the wavelength that is selected by the optical filter can be controlled. The one or more intervening layers are preferably heated by passing current through the one or more intervening layers, or by passing current through a separate resistive layer that is thermally coupled to the one or more intervening layers. Such a filter can provide a high degree of wavelength selectivity in a robust and stable manner.

9. 发明授权

US06544655B1 Methods for reducing the curvature in boron-doped silicon micromachined structures 失效
公开(公告)号：US06544655B1
公开(公告)日：2003-04-08
申请号：US09634932
申请日：2000-08-08
申请人： Cleopatra Cabuz , Max C. Glenn , Francis M. Erdmann , Robert D. Horning
发明人： Cleopatra Cabuz , Max C. Glenn , Francis M. Erdmann , Robert D. Horning
IPC分类号： B32B904
CPC分类号： B81C1/00365 , B81C2201/0164 , Y10T428/21 , Y10T428/2495
摘要： Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.

10. 发明授权

US08748206B2 Systems and methods for a four-layer chip-scale MEMS device 有权
标题翻译：用于四层芯片级MEMS器件的系统和方法
公开(公告)号：US08748206B2
公开(公告)日：2014-06-10
申请号：US13295273
申请日：2011-11-14
申请人： Robert D. Horning
发明人： Robert D. Horning
IPC分类号： H01L21/00
CPC分类号： B81B7/02 , B81B7/0041 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2207/095 , B81B2207/096 , B81C2201/019 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.
摘要翻译：提供了一种用于微机电系统（MEMS）装置的系统和方法。在一个实施例中，系统包括第一双芯片，其包括第一基层; 结合到第一基底层的第一器件层，第一器件层包括第一组MEMS器件; 以及结合到第一器件层的第一顶层，其中第一组MEMS器件被气密隔离。该系统还包括第二双芯片，其包括第二基层; 结合到第二基层的第二器件层，第二器件层包括第二组MEMS器件; 以及结合到所述第二器件层的第二顶层，其中所述第二组MEMS器件是气密隔离的，其中所述第一顶层的第一顶表面接合到所述第二顶层的第二顶表面。

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