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1. 发明授权

US07033694B2 Threaded fuel cell assembly 有权
标题翻译：螺纹燃料电池组件
公开(公告)号：US07033694B2
公开(公告)日：2006-04-25
申请号：US10410635
申请日：2003-04-07
申请人： David Champion , Dennis Lazaroff , Peter Mardilovich , Gregory S Herman , James O'Neil
发明人： David Champion , Dennis Lazaroff , Peter Mardilovich , Gregory S Herman , James O'Neil
IPC分类号： H01M8/02 , H01M2/08
CPC分类号： H01M8/2475 , H01M8/0282 , H01M8/1226 , H01M2008/1293
摘要： Various embodiments of the invention are directed toward a fuel cell assembly comprising a fuel cell casing and one or more fuel cell elements comprised of electrode and electrolyte material. The fuel cell casing is configured with threads and the fuel cell elements can be threadingly engaged in the fuel cell casing.
摘要翻译：本发明的各种实施例涉及一种燃料电池组件，其包括燃料电池壳体和由电极和电解质材料组成的一个或多个燃料电池元件。燃料电池壳体配置有螺纹，并且燃料电池元件可以螺纹地接合在燃料电池壳体中。

2. 发明授权

US07067215B2 Fuel cell and method of manufacturing same using chemical/mechanical planarization 有权
标题翻译：燃料电池及其制造方法使用化学/机械平面化
公开(公告)号：US07067215B2
公开(公告)日：2006-06-27
申请号：US10286235
申请日：2002-10-31
申请人： Dennis Lazaroff , Peter Mardilovich , David Champion , Gregory S Herman
发明人： Dennis Lazaroff , Peter Mardilovich , David Champion , Gregory S Herman
IPC分类号： H01M8/02 , H01M8/10 , B05D5/12
CPC分类号： H01M8/0247 , H01M4/8814 , H01M4/8825 , H01M4/8885 , H01M8/0263 , H01M8/1007 , H01M8/1231 , H01M8/124 , H01M8/1286 , Y02P70/56
摘要： A method of making a fuel cell includes the following steps. A pattern is placed on a base surface to create a predetermined topography on the base surface. An anode layer, a cathode layer and/or an electrolyte layer is/are deposited over the pattern. Areas of higher topography are removed from areas of lower topography using chemical mechanical planarization to form a predetermined fuel cell structure.
摘要翻译：制造燃料电池的方法包括以下步骤。将图案放置在基面上以在基面上产生预定的形貌。在图案上沉积阳极层，阴极层和/或电解质层。使用化学机械平面化从较低地形的区域去除较高地形的区域以形成预定的燃料电池结构。

3. 发明申请

US20110049092A1 INKJET PRINTHEAD BRIDGE BEAM FABRICATION METHOD 有权
标题翻译： INKJET PRINTHEAD BRIDGE梁制造方法
公开(公告)号：US20110049092A1
公开(公告)日：2011-03-03
申请号：US12548397
申请日：2009-08-26
申请人： Alfred I-Tsung Pan , Kenneth Vandenberghe , Dennis Lazaroff
发明人： Alfred I-Tsung Pan , Kenneth Vandenberghe , Dennis Lazaroff
IPC分类号： B44C1/22
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1646
摘要： A method of fabricating a bridge beam of an inkjet printhead employs a cavity formed under the bridge beam and an etch-stop layer that limits a back-surface recess formation. The method includes forming a cavity that connects between a bottom of a pair of trenches in and extending from a front surface of a substrate and depositing an etch-stop layer at a bottom of the cavity. The method further includes forming a recess in a back surface of the substrate, the recess exposing the etch-stop layer and the etch-stop layer limiting a depth of the formed recess. The method further includes removing the exposed etch-stop layer to connect the cavity and the recess, the bridge beam being a portion of the substrate above the formed cavity and between the trenches.
摘要翻译：一种制造喷墨打印头的桥梁的方法采用在桥梁下方形成的空腔和限制背面凹陷形成的蚀刻停止层。该方法包括形成将一对沟槽的底部连接在衬底的前表面中并从衬底的前表面延伸并在该腔的底部沉积蚀刻停止层的空腔。该方法还包括在基板的后表面中形成凹部，露出蚀刻停止层的凹部和限制形成的凹部的深度的蚀刻停止层。该方法还包括去除暴露的蚀刻停止层以连接空腔和凹部，桥梁是在形成的空腔之上和沟槽之间的衬底的一部分。

4. 发明申请

US20060228892A1 Anti-reflective surface 审中-公开
标题翻译：抗反射面
公开(公告)号：US20060228892A1
公开(公告)日：2006-10-12
申请号：US11101323
申请日：2005-04-06
申请人： Dennis Lazaroff , Arthur Piehl , Bhavin Shah
发明人： Dennis Lazaroff , Arthur Piehl , Bhavin Shah
IPC分类号： H01L21/465 , H01L33/00
CPC分类号： G02B1/118 , C03C17/007 , C03C2217/40 , C03C2218/328 , G02B1/11 , G02B5/045
摘要： A discontinuous layer is formed on a transparent substrate of a semiconductor material. Portions of the transparent substrate are exposed at discontinuities in the discontinuous layer. The discontinuous layer and the exposed portions of the transparent substrate are etched at least until the discontinuous layer is completely removed, thereby forming peaks and valleys in the substrate.
摘要翻译：在半导体材料的透明基板上形成不连续层。在不连续层中的不连续部分露出透明基板的一部分。蚀刻不连续层和透明基板的露出部分至少直到不连续层被完全去除，从而在基板中形成峰和谷。

5. 发明申请

US20050106436A1 Dual chamber fuel cell elements 审中-公开
标题翻译：双室燃料电池元件
公开(公告)号：US20050106436A1
公开(公告)日：2005-05-19
申请号：US10713359
申请日：2003-11-14
申请人： Dennis Lazaroff
发明人： Dennis Lazaroff
IPC分类号： B05D5/12 , B23P19/00 , H01M2/00 , H01M2/14 , H01M8/00 , H01M8/10 , H01M8/12 , H01M8/24
CPC分类号： H01M8/241 , H01M8/0271 , H01M8/1006 , H01M8/1226 , H01M8/1286 , H01M2008/1095 , H01M2008/1293 , Y10T29/53135
摘要： Various embodiments of the invention comprise a dual chamber fuel cell element. The fuel cell element generally comprises a dual chamber fuel cell stack layer comprising anode, cathode and electrolyte materials deposited on one side of a substrate.
摘要翻译：本发明的各种实施例包括双室燃料电池元件。燃料电池元件通常包括双室燃料电池堆层，其包含沉积在衬底的一侧上的阳极，阴极和电解质材料。

6. 发明授权

US08425787B2 Inkjet printhead bridge beam fabrication method 有权
标题翻译：喷墨打印头桥梁制造方法
公开(公告)号：US08425787B2
公开(公告)日：2013-04-23
申请号：US12548397
申请日：2009-08-26
申请人： Alfred I-Tsung Pan , Kenneth Vandenberghe , Dennis Lazaroff
发明人： Alfred I-Tsung Pan , Kenneth Vandenberghe , Dennis Lazaroff
IPC分类号： G01D15/00
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1646
摘要： A method of fabricating a bridge beam of an inkjet printhead employs a cavity formed under the bridge beam and an etch-stop layer that limits a back-surface recess formation. The method includes forming a cavity that connects between a bottom of a pair of trenches in and extending from a front surface of a substrate and depositing an etch-stop layer at a bottom of the cavity. The method further includes forming a recess in a back surface of the substrate, the recess exposing the etch-stop layer and the etch-stop layer limiting a depth of the formed recess. The method further includes removing the exposed etch-stop layer to connect the cavity and the recess, the bridge beam being a portion of the substrate above the formed cavity and between the trenches.
摘要翻译：一种制造喷墨打印头的桥梁的方法采用在桥梁下方形成的空腔和限制背面凹陷形成的蚀刻停止层。该方法包括形成将一对沟槽的底部连接在衬底的前表面中并从衬底的前表面延伸并在该腔的底部沉积蚀刻停止层的空腔。该方法还包括在基板的后表面中形成凹部，露出蚀刻停止层的凹部和限制形成的凹部的深度的蚀刻停止层。该方法还包括去除暴露的蚀刻停止层以连接空腔和凹部，桥梁是在形成的空腔之上和沟槽之间的衬底的一部分。

7. 发明授权

US06821848B2 Tunnel-junction structures and methods 失效
标题翻译：隧道结结构和方法
公开(公告)号：US06821848B2
公开(公告)日：2004-11-23
申请号：US10286157
申请日：2002-10-30
申请人： Dennis Lazaroff , Kenneth M. Kramer , James E. Ellenson , Neal W. Meyer , David Punsalan , Kurt Ulmer , Peter Fricke , Andrew Koll , Andrew L. Van Brocklin
发明人： Dennis Lazaroff , Kenneth M. Kramer , James E. Ellenson , Neal W. Meyer , David Punsalan , Kurt Ulmer , Peter Fricke , Andrew Koll , Andrew L. Van Brocklin
IPC分类号： H01L21336
CPC分类号： G11C13/003 , G11C17/16 , G11C17/18 , G11C2213/76
摘要： Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.
摘要翻译：隧道结结构通过同时形成两个或更多个隧道结的一组相关方法中的任一种来制造。所公开的制造方法与常规CMOS制造实践兼容，包括单镶嵌和双镶嵌工艺。同时形成的隧道结可以具有不同的区域。在一些实施例中，浴盆结构形成有倾斜的侧壁。在一些实施例中，蚀刻在浴缸的侧壁上的氧化物 - 金属氧化物膜堆叠以形成隧道结。公开了存储电路，其它集成电路结构，携带微电子的衬底以及通过该方法制造的其它电子器件。

8. 发明申请

US20050106772A1 MEMS device and method of forming MEMS device 有权
标题翻译： MEMS器件和MEMS器件的形成方法
公开(公告)号：US20050106772A1
公开(公告)日：2005-05-19
申请号：US11019780
申请日：2004-12-21
申请人： Michael Monroe , Eric Nikkel , Dennis Lazaroff
发明人： Michael Monroe , Eric Nikkel , Dennis Lazaroff
IPC分类号： B81B3/00 , B81C1/00 , G02B26/08 , H01L21/8242
CPC分类号： G02B26/0841 , B81B3/0083 , B81B2201/042 , B81B2203/0181 , B81B2203/058 , Y10S359/904
摘要： A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including, filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.
摘要翻译：形成MEMS器件的方法包括在基底结构上沉积导电材料，在导电材料上形成第一牺牲层，包括形成第一牺牲层的基本平坦的表面，以及在第一牺牲层的基本平坦的表面上形成第一元件第一牺牲层，包括通过第一牺牲层将第一元件与导电材料连通。另外，该方法包括在第一元件上形成第二牺牲层，包括形成第二牺牲层的基本平坦的表面，在形成第二牺牲层之后，通过第二牺牲层形成支撑件到第一元件，包括填充支撑件，以及在第二牺牲层的支撑件和基本平坦的表面上形成第二元件。这样，该方法还包括基本上去除第一牺牲层和第二牺牲层，从而相对于第一元件与支撑件支撑第二元件。

9. 发明申请

US20050089733A1 Patterned ceramic films and method for producing the same 失效
标题翻译：图案化陶瓷膜及其制造方法
公开(公告)号：US20050089733A1
公开(公告)日：2005-04-28
申请号：US10695306
申请日：2003-10-28
申请人： David Punsalan , Dennis Lazaroff , Christopher Beatty
发明人： David Punsalan , Dennis Lazaroff , Christopher Beatty
IPC分类号： G03F7/004 , H01M4/86 , H01M4/90 , H01M8/12 , H01M8/22 , B05D3/02 , B05D7/24 , H01M6/02
CPC分类号： H01M4/9025 , G03F7/0047 , H01M4/8621 , H01M4/8626 , H01M4/9016 , H01M8/1246 , H01M8/126 , Y02E60/525 , Y02P70/56 , Y10S438/95
摘要： A ceramic film is useful as ion-conducting ceramics, electrodes, hard ceramic coatings, transparent conducting oxides, transparent semiconducting oxides, ferroelectric oxides, and dielectric oxides. The ceramic film may be produced from a liquid precursor solution.
摘要翻译：陶瓷膜可用作离子导电陶瓷，电极，硬陶瓷涂层，透明导电氧化物，透明半导体氧化物，铁电氧化物和电介质氧化物。陶瓷膜可以由液体前体溶液制备。

10. 发明授权

US06605821B1 Phase change material electronic memory structure and method for forming 失效
标题翻译：相变材料电子记忆体结构及其形成方法
公开(公告)号：US06605821B1
公开(公告)日：2003-08-12
申请号：US10142494
申请日：2002-05-10
申请人： Heon Lee , Dennis Lazaroff , Neal Meyer , Jim Ellenson , Ken Kramer , Kurt Ulmer , David Pursalan , Peter Fricke , Andrew Koll , Andy Van Brockin
发明人： Heon Lee , Dennis Lazaroff , Neal Meyer , Jim Ellenson , Ken Kramer , Kurt Ulmer , David Pursalan , Peter Fricke , Andrew Koll , Andy Van Brockin
IPC分类号： H01L2902
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/1675 , Y10S438/90
摘要： The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A phase change material element is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor is formed adjacent to the phase change material element.
摘要翻译：本发明包括电子存储器结构。电子存储器结构包括基板。基本上平面的第一导体形成为与基板相邻。互连层与第一导体相邻地形成。在互连层附近形成相变材料元件。互连层包括从第一导体延伸到相变材料元件的导电互连结构。互连结构包括物理地连接到第一导体的第一表面。互连结构还包括附接到相变材料元件的第二表面。第二表面的第二表面积基本上小于第一表面的第一表面积。形成与相变材料元件相邻的基本平坦的第二导体。

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