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    • 2. 发明授权
    • Electro-static discharge protection device having a modulated control
input terminal
    • 具有调制控制输入端子的静电放电保护装置
    • US6078487A
    • 2000-06-20
    • US853840
    • 1997-05-09
    • Hamid PartoviKaizad R. MistryDavid B. KrakauerWilliam A. McGee
    • Hamid PartoviKaizad R. MistryDavid B. KrakauerWilliam A. McGee
    • H03K17/0814H02H9/00
    • H01L27/0266H03K17/08142
    • A circuit which protects an integrated circuit (IC) device from damage due to electrostatic discharge (ESD). The protection circuit includes an N-channel metal oxide semiconductor field effect transistor (MOSFET) clamping device and a gate modulation circuit. The source and drain of the MOSFET clamp are connected between an input/output (I/O) pad of the IC and a ground reference voltage. During normal operation of the IC, the gate modulation circuit disables the MOSFET clamp by connecting its gate terminal to a ground reference voltage. This permits signal voltages to pass between the I/O pad and any operating circuits connected to the pad. During an ESD event, the gate modulation circuit connects the gate to the I/O pad, which enables the MOSFET clamp, causing any ESD voltages and resulting currents to be shunted through the MOSFET clamp to ground. As a result, the ESD clamp reaches its clamped-to snapback voltage via an increase in MOSFET channel current, and not via junction breakdown. This insures that the ESD clamp reaches its snapback voltage before the onset of junction breakdown in the operating circuits. The circuit is especially useful in integrated circuits where the gate oxide of a standard ESD clamp transistor is too thin to protect the operating logic from I/O signal voltages that are greater than the supply voltage used for the operating logic circuits.
    • 保护集成电路(IC)器件免受静电放电(ESD)损坏的电路。 保护电路包括N沟道金属氧化物半导体场效应晶体管(MOSFET)钳位装置和栅极调制电路。 MOSFET钳位的源极和漏极连接在IC的输入/输出(I / O)焊盘和接地参考电压之间。 在IC的正常工作期间,栅极调制电路通过将其栅极端子连接到接地参考电压来禁用MOSFET钳位。 这允许信号电压在I / O焊盘和连接到焊盘的任何操作电路之间通过。 在ESD事件期间,栅极调制电路将栅极连接到I / O焊盘,这使得MOSFET钳位能够使任何ESD电压和所产生的电流通过MOSFET钳位分流到地。 因此,ESD钳位通过MOSFET沟道电流的增加而不是通过结击穿而达到其钳位到快速恢复电压。 这确保了ESD钳位在工作电路结点击穿开始之前达到其回跳电压。 该电路在集成电路中特别有用,其中标准ESD钳位晶体管的栅极氧化物太薄,无法保护操作逻辑免受大于操作逻辑电路所用电源电压的I / O信号电压的影响。
    • 4. 发明授权
    • Fast tag compare and bank select in set associative cache
    • 快速标签比较和集合相关缓存中的存储区选择
    • US5353424A
    • 1994-10-04
    • US794865
    • 1991-11-19
    • Hamid PartoviWilliam R. WheelerMichael LearyMichael A. CaseSteven ButlerRajesh Khanna
    • Hamid PartoviWilliam R. WheelerMichael LearyMichael A. CaseSteven ButlerRajesh Khanna
    • G06F12/08
    • G06F12/0895G06F12/0864
    • A tag comparator and bank selector for a set-associative cache in a computer system operates in a minimum time so that a cache hit or miss signal is generated early in a memory cycle. The data memory of the cache has two (or more) banks, with a tag store for each bank, and the two banks are accessed separately and in parallel using the index (low order address bits) while the tag translation is in progress. Two bit-by-bit tag compares are performed, one for each tag store, producing two multibit match indications, one bit for each tag bit in each tag store. These two match indications are applied to two separate dynamic NOR gates, and the two outputs applied to a logic circuit to detect a hit and generate a bank-select output. There are four possible outcomes from the compare operation: both banks miss, left bank hits, right bank hits, and both banks hit. The later condition indicates a possible ambiguity, and neither data item should be used, so a miss is signalled. The comparator is in large part self-timed using a flow-through design, as distinguished from being enabled on clock edges. Delay elements in the bank select logic allow the banks to be timed against each other, and current limiters are employed to equalize the timing of miss signals, regardless of the number of match lines switching high (which is data dependent). An address producing 19-of-20 match bits will result in a NOR gate output of about the same timing as an address producing no match bits, even though the former will turn on only one transistor to discharge the precharged output node of the NOR gate, whereas the later will turn on twenty paths for discharge. Although a two-way set associative cache is shown herein as an example embodiment, one of the features of the invention is that higher levels of associativity, e.g., four-way and eight-way, are equally well accommodated.
    • 用于计算机系统中的组相关高速缓存的标签比较器和存储体选择器在最小时间内操作,使得在存储器周期中早期产生高速缓存命中或未命中信号。 高速缓存的数据存储器具有两个(或更多个)存储体,每个存储体具有标签存储,并且当标签转换正在进行时,使用索引(低位地址位)分开存取和并行访问两个存储体。 执行两个逐位标签比较,每个标签存储一个,产生两个多位匹配指示,每个标签存储中每个标签位一位。 这两个匹配指示被应用于两个单独的动态NOR门,并且两个输出被施加到逻辑电路以检测命中并产生一个存储体选择输出。 比较操作有四个可能的结果:两家银行错失,左岸点击,右岸点击,两家银行都受到打击。 后面的条件表示可能的模糊性,并且都不应该使用数据项,所以发出了错误信号。 使用流通设计,比较器在很大程度上是自定时的,与时钟边沿不同。 银行选择逻辑中的延迟元素允许银行彼此定时,并且采用电流限制器来均衡缺失信号的定时,而不管匹配线的数量如何切换高(这取决于数据)。 产生20位20位匹配位的地址将导致与不产生不匹配位的地址大致相同的定时的或非门输出,即使前者将仅接通一个晶体管来放电NOR门的预充电输出节点 ,而后来将打开二十条出路。 尽管本文中示出了双向组关联高速缓存作为示例实施例,但是本发明的特征之一是更高级别的关联性,例如四路和八路同样适应。
    • 10. 发明授权
    • Dynamic NOR gates for NAND decode
    • 用于NAND解码的动态NOR门
    • US6081136A
    • 2000-06-27
    • US993335
    • 1997-12-19
    • Rajesh KhannaHamid Partovi
    • Rajesh KhannaHamid Partovi
    • H03K19/096H03K19/003
    • H03K19/0963
    • A NOR gate pair includes a first and second NOR gate, each with a plurality of inputs and an output. A first NAND gate has a first input coupled to the output of the first NOR gate, a second input coupled to the output of the second NOR gate through a first input inverter, and an output. A second NAND gate has a first input coupled to the output of the second NOR gate, a second input coupled to the output of the first NOR gate through a second input inverter, and an output. A first output inverter is coupled to the output of the first NAND gate and a second output inverter is coupled to the output of the second NAND gate. This configuration assures that NOR gates used in a one-hot-decode decoder will all have logic-low outputs during a precharge phase.
    • NOR门对包括第一和第二NOR门,每个具有多个输入和输出。 第一NAND门具有耦合到第一或非门的输出的第一输入端,通过第一输入反相器耦合到第二或非门的输出的第二输入和输出。 第二与非门具有耦合到第二或非门的输出的第一输入,通过第二输入反相器耦合到第一或非门的输出的第二输入和输出。 第一输出反相器耦合到第一NAND门的输出,第二输出反相器耦合到第二NAND门的输出。 该配置确保在一个热解码解码器中使用的或非门将在预充电阶段期间都具有逻辑低输出。