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1. 发明授权

US6078487A Electro-static discharge protection device having a modulated control input terminal 失效
标题翻译：具有调制控制输入端子的静电放电保护装置
公开(公告)号：US6078487A
公开(公告)日：2000-06-20
申请号：US853840
申请日：1997-05-09
申请人： Hamid Partovi , Kaizad R. Mistry , David B. Krakauer , William A. McGee
发明人： Hamid Partovi , Kaizad R. Mistry , David B. Krakauer , William A. McGee
IPC分类号： H03K17/0814 , H02H9/00
CPC分类号： H01L27/0266 , H03K17/08142
摘要： A circuit which protects an integrated circuit (IC) device from damage due to electrostatic discharge (ESD). The protection circuit includes an N-channel metal oxide semiconductor field effect transistor (MOSFET) clamping device and a gate modulation circuit. The source and drain of the MOSFET clamp are connected between an input/output (I/O) pad of the IC and a ground reference voltage. During normal operation of the IC, the gate modulation circuit disables the MOSFET clamp by connecting its gate terminal to a ground reference voltage. This permits signal voltages to pass between the I/O pad and any operating circuits connected to the pad. During an ESD event, the gate modulation circuit connects the gate to the I/O pad, which enables the MOSFET clamp, causing any ESD voltages and resulting currents to be shunted through the MOSFET clamp to ground. As a result, the ESD clamp reaches its clamped-to snapback voltage via an increase in MOSFET channel current, and not via junction breakdown. This insures that the ESD clamp reaches its snapback voltage before the onset of junction breakdown in the operating circuits. The circuit is especially useful in integrated circuits where the gate oxide of a standard ESD clamp transistor is too thin to protect the operating logic from I/O signal voltages that are greater than the supply voltage used for the operating logic circuits.
摘要翻译：保护集成电路（IC）器件免受静电放电（ESD）损坏的电路。保护电路包括N沟道金属氧化物半导体场效应晶体管（MOSFET）钳位装置和栅极调制电路。 MOSFET钳位的源极和漏极连接在IC的输入/输出（I / O）焊盘和接地参考电压之间。在IC的正常工作期间，栅极调制电路通过将其栅极端子连接到接地参考电压来禁用MOSFET钳位。这允许信号电压在I / O焊盘和连接到焊盘的任何操作电路之间通过。在ESD事件期间，栅极调制电路将栅极连接到I / O焊盘，这使得MOSFET钳位能够使任何ESD电压和所产生的电流通过MOSFET钳位分流到地。因此，ESD钳位通过MOSFET沟道电流的增加而不是通过结击穿而达到其钳位到快速恢复电压。这确保了ESD钳位在工作电路结点击穿开始之前达到其回跳电压。该电路在集成电路中特别有用，其中标准ESD钳位晶体管的栅极氧化物太薄，无法保护操作逻辑免受大于操作逻辑电路所用电源电压的I / O信号电压的影响。

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