专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5221366A Etching agents comprising .beta.-diketone and .beta.-ketoimine ligands and a process for using the same 失效
标题翻译：包含β-二酮和β-酮亚胺配体的蚀刻剂及其使用方法
公开(公告)号：US5221366A
公开(公告)日：1993-06-22
申请号：US677918
申请日：1991-04-01
申请人： David A. Roberts , John C. Ivankovits , John A. T. Norman , David A. Bohling
发明人： David A. Roberts , John C. Ivankovits , John A. T. Norman , David A. Bohling
IPC分类号： B23K35/36 , B23K35/38 , C23F1/12 , H05K3/34
CPC分类号： C23F1/12 , B23K35/3612 , B23K35/3615 , B23K35/38 , H05K3/3489
摘要： This invention is a residue-free vapor-phase process for etching metallic layers during the manufacturing of integrated circuits. The process comprises contacting a portion of the metallic surface to be etched with an effective amount of an etching agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal to be removed at a temperature sufficient to form a volatile metal-ligand complex. The volatile metal-ligand complex is sublimed from the surface thereby etching successive layers of the metal.
摘要翻译：本发明是在制造集成电路期间蚀刻金属层的无残留气相法。该方法包括使待蚀刻的金属表面的一部分与有效量的蚀刻剂接触，所述腐蚀剂包含分散在能够氧化待除去金属的气氛中的β-二酮或β-酮亚胺，该温度足以形成挥发性金属 - 配体络合物。挥发性金属 - 配体络合物从表面升华，从而蚀刻金属的连续层。

2. 发明授权

US5094701A Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same 失效
标题翻译：包含β-二酮和β-酮亚胺配体的清洁剂及其使用方法
公开(公告)号：US5094701A
公开(公告)日：1992-03-10
申请号：US677915
申请日：1991-04-01
申请人： John A. T. Norman , John C. Ivankovits , David A. Roberts , David A. Bohling
发明人： John A. T. Norman , John C. Ivankovits , David A. Roberts , David A. Bohling
IPC分类号： C23G5/032 , B23K35/36 , B23K35/38 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/50 , C23F1/12 , H01L21/304 , H01L21/306 , H05K3/34
CPC分类号： H01L21/02046 , B23K35/3612 , B23K35/3615 , B23K35/38 , C11D7/264 , C11D7/28 , C11D7/3236 , C23F1/12 , H01L21/02049 , H05K3/3489
摘要： This invention is a residue-free cleaning process for removing metal-containing contaminants from a surface of a substrate of the type used in manufacturing semi-conductor devices. The process comprises contacting the substrate with an effective amount of a cleaning agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal-contaminants at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate. The volatile metal-ligand complexes are sublimed from the surface of the substrate leaving essentially no residue.
摘要翻译：本发明是一种用于从半导体器件制造中使用的类型的衬底的表面去除含金属污染物的无残留清洁方法。该方法包括使底物与有效量的清洁剂接触，所述清洁剂包含分散在能够氧化金属污染物的气氛中的β-二酮或β-酮亚胺，所述温度足以在所述表面上形成挥发性金属 - 配体复合物基质。挥发性金属 - 配体络合物从基材的表面升华，基本上不留下残余物。

3. 发明授权

US5028724A Synthesis of volatile fluorinated and non-fluorinated metal-beta-ketonate and metal-beta-ketoiminato complexes 失效
标题翻译：挥发性氟化和非氟化金属β-酮酸酯和金属β-酮亚胺酸复合物的合成
公开(公告)号：US5028724A
公开(公告)日：1991-07-02
申请号：US502092
申请日：1990-03-30
申请人： John C. Ivankovits , David A. Bohling , John A. T. Norman , David A. Roberts
发明人： John C. Ivankovits , David A. Bohling , John A. T. Norman , David A. Roberts
IPC分类号： C07C45/77 , C07C49/92 , C07C251/76 , C07C251/78 , C07F1/00 , C07F5/00 , C07F7/00 , C07F11/00 , C07F19/00
CPC分类号： C07F5/003 , C07C251/76 , C07C251/78 , C07C45/77 , C07C49/92 , C07F1/005 , C07F11/005 , C07F19/005 , C07F7/003
摘要： A process for the vapor-phase synthesis of non-adduct volatile fluorinated and non-fluorinated metal-ligand complexes comprising contacting a .beta.-diketone or .beta.-ketoimine ligand with an inert carrier gas to vaporize the ligand, reacting the vaporized ligand with a metal species at a temperature sufficient to form the metal-ligand complex and recovering the metal-ligand complex by sublimation. The process is conducted in the absence of solvent thereby providing pure non-adduct metal-ligand complexes. Such complexes are particularly suited for specialty applications requiring use of high purity compounds.
摘要翻译：一种用于气相合成非加合物挥发性氟化和非氟化金属 - 配体配合物的方法，包括使β-二酮或β-酮亚胺配体与惰性载气接触以蒸发配体，使蒸发的配体与金属物质，其温度足以形成金属 - 配体络合物并通过升华回收金属 - 配体络合物。该方法在不存在溶剂的情况下进行，从而提供纯非加合物金属 - 配体络合物。这种复合物特别适用于需要使用高纯度化合物的特殊应用。

4. 发明授权

US5213622A Cleaning agents for fabricating integrated circuits and a process for using the same 失效
标题翻译：制造集成电路的清洁剂及其使用方法
公开(公告)号：US5213622A
公开(公告)日：1993-05-25
申请号：US777818
申请日：1991-10-11
申请人： David A. Bohling , John C. Ivankovits , David A. Roberts
发明人： David A. Bohling , John C. Ivankovits , David A. Roberts
IPC分类号： C11D7/02 , C11D7/08 , C11D7/26 , C11D11/00 , C23G5/00 , H01L21/304 , H01L21/306 , H01L21/3105 , H05K3/26
CPC分类号： H01L21/02046 , C11D11/0047 , C11D7/02 , C11D7/08 , C11D7/265 , C23G5/00 , H01L21/02085 , H01L21/3105
摘要： This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process comprises contacting the surface to be cleaned with an effective amount of a cleaning agent comprising a carboxylic acid selected from acetic acid or formic acid at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surface of the substrate providing a clean, substantially residue-free surface.

5. 发明授权

US5213621A Halogenated carboxylic acid cleaning agents for fabricating integrated circuits and a process for using the same 失效
标题翻译：用于制造集成电路的羟基羧酸清洁剂及其使用方法
公开(公告)号：US5213621A
公开(公告)日：1993-05-25
申请号：US777821
申请日：1991-10-11
申请人： John C. Ivankovits , David A. Bohling , David A. Roberts
发明人： John C. Ivankovits , David A. Bohling , David A. Roberts
IPC分类号： C11D7/02 , C11D7/08 , C11D7/28 , C11D11/00 , C23G5/00 , H01L21/304 , H01L21/306 , H01L21/3105 , H05K3/26
CPC分类号： H01L21/02046 , C11D11/0047 , C11D7/02 , C11D7/08 , C11D7/28 , C23G5/00 , H01L21/02049 , H01L21/3105
摘要： This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of a partially halogenated or fully halogenated linear or branched carboxylic acid having from 2 to about 10 carbon atoms wherein the halogen is selected from fluorine or chlorine. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.

6. 发明授权

US4988640A Method of doping and implanting using arsine, antimony, and phosphine substitutes 失效
标题翻译：使用胂，锑和膦替代物的掺杂和注入方法
公开(公告)号：US4988640A
公开(公告)日：1991-01-29
申请号：US433080
申请日：1989-11-06
申请人： David A. Bohling , Gregory T. Muhr , David A. Roberts
发明人： David A. Bohling , Gregory T. Muhr , David A. Roberts
IPC分类号： C23C16/30
CPC分类号： C23C16/30 , Y10S148/041 , Y10S148/083 , Y10S438/961
摘要： The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc. doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris-trifluoromethyl arsenic (AS(CF.sub.3) .sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.
摘要翻译：本发明涉及至少部分氟化的有机金属化合物在反应沉积应用中的用途。更具体地说，本发明涉及氟代有机金属化合物M（CF 3）3或任何M（CnF（2n + 1））3-yHy化合物的用途，其中（y 2），M（CH 2 CF 3）3或任何（CnH [（2n + 1）-x] Fx）3-yHy的氟代烷基有机金属化合物，其中y <= 2; x具有值1

7. 发明授权

US4904616A Method of depositing arsine, antimony and phosphine substitutes 失效
标题翻译：胂，锑和膦替代物的沉积方法
公开(公告)号：US4904616A
公开(公告)日：1990-02-27
申请号：US224089
申请日：1988-07-25
申请人： David A. Bohling , Gregory T. Muhr , David A. Roberts
发明人： David A. Bohling , Gregory T. Muhr , David A. Roberts
IPC分类号： C30B25/14 , C01B25/08 , C03C17/22 , C03C21/00 , C07F9/50 , C07F9/72 , C07F9/90 , C23C16/30 , C30B29/40 , C30B31/06 , H01L21/205
CPC分类号： C23C16/30 , Y10S148/065 , Y10S148/11 , Y10S252/951
摘要： The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, M(CF.sub.2 CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy; and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris-trifluoromethyl arsenic (As(CF.sub.3).sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

8. 发明授权

US5332444A Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same 失效
标题翻译：用于从集成电路组件去除含有污染物的金属气相清洗剂及其使用方法
公开(公告)号：US5332444A
公开(公告)日：1994-07-26
申请号：US982196
申请日：1992-11-25
申请人： Mark A. George , David A. Bohling
发明人： Mark A. George , David A. Bohling
IPC分类号： C01B33/00 , C11D7/22 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/3105 , B08B5/00 , C09K13/00
CPC分类号： H01L21/02046 , H01L21/3105
摘要： This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of hexamethyldisilazane. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.
摘要翻译：本发明是用于在制造完成的电子器件所需的许多制造步骤之间从集成电路和半导体的表面清除含金属污染物的气相方法。该方法使用包含有效量的六甲基二硅氮烷的清洁剂。该方法包括使待清洁的表面与足够在待清洁的基底表面上形成挥发性金属 - 配体复合物的温度下接触有效量的所需清洁剂。挥发性金属 - 配体络合物从基材的表面升华，提供干净，基本上无残留的表面。

9. 发明授权

US5124278A Amino replacements for arsine, antimony and phosphine 失效
标题翻译：氨基取代胂，锑和膦
公开(公告)号：US5124278A
公开(公告)日：1992-06-23
申请号：US586845
申请日：1990-09-21
申请人： David A. Bohling , Gregory T. Muhr , Sherri L. Bassner
发明人： David A. Bohling , Gregory T. Muhr , Sherri L. Bassner
IPC分类号： C23C16/30 , C30B25/02
CPC分类号： C30B25/02 , C23C16/301 , C30B29/40 , Y10S148/016 , Y10S148/041 , Y10S148/056 , Y10S148/065
摘要： The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR.sub.2).sub.3-x H.sub.x, where R is organic, alkyl or fluoroalkyl, and x is less than or equal to 2, and M=As, Sb or P, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the metalorganic vapor phase epitaxy of compound semiconductor material such as GaAs, InP, AlGaAs, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy (or MOMBE); and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silcon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris(dialkylamino) arsenic (As(NR.sub.2).sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.
摘要翻译：本发明涉及金属有机胺作为反应沉积应用中金属供体源化合物的用途。更具体地，本发明涉及氨基取代的金属供体源化合物M（NR2）3-xHx的用途，其中R是有机基团，烷基或氟代烷基，x小于或等于2，M = As， Sb或P，在需要沉积相应元素的工艺中。这些用途包括许多不同的过程; 化合物半导体材料如GaAs，InP，AlGaAs等的金属有机气相外延; 掺杂SiO 2或硼硅酸盐基玻璃以增强玻璃的回流性能; 硅外延材料的原位n型掺杂; 采购砷或磷进行离子注入; 化学束外延（或MOMBE）; 以及扩散掺杂到诸如二氧化硅，硅和多晶硅的电子材料中。这些类型的材料通常具有高挥发性，低毒性，不稳定的金属 - 配体键和稳定的分解产物。具体来说，已经确定了在制造硅集成电路，III-V族化合物半导体，光电子学和其他电子器件中使用三（二烷基氨基）砷（As（NR 2）3）作为胂的替代物。

10. 发明授权

US5464666A Process for chemical vapor codeposition of copper and aluminum alloys 失效
标题翻译：铜和铝合金化学气相沉积工艺
公开(公告)号：US5464666A
公开(公告)日：1995-11-07
申请号：US384088
申请日：1995-02-06
申请人： Stephen M. Fine , David A. Bohling
发明人： Stephen M. Fine , David A. Bohling
IPC分类号： C23C16/06 , C23C16/18 , H01L21/28 , H01L21/285 , B05D3/06
CPC分类号： C23C16/18
摘要： The present invention is a method for the simultaneous codeposition of copper and aluminum from volatile copper and aluminum precursors to form a layer on a substrate under chemical vapor phase conditions, such as the metallization of an aluminum/(0.25-4% copper) layer on a silicon semiconductor electronic device.
摘要翻译：本发明是一种从挥发性铜和铝前体同时共沉积铜和铝的方法，在化学气相条件下在基底上形成一层，例如铝/（0.25-4％铜）层的金属化硅半导体电子器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式