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1. 发明授权

US4977434A Field-effect semiconductor device comprising an ancillary electrode 失效
标题翻译：场效应半导体器件包括辅助电极
公开(公告)号：US4977434A
公开(公告)日：1990-12-11
申请号：US225165
申请日：1988-07-28
申请人： Daniel Delagebeaudeuf , Henri Derewonko , Jean J. Godart , Patrick Resneau , Pierre Gibeau
发明人： Daniel Delagebeaudeuf , Henri Derewonko , Jean J. Godart , Patrick Resneau , Pierre Gibeau
IPC分类号： H01L21/338 , H01L29/08 , H01L29/417 , H01L29/78 , H01L29/80 , H01L29/812
CPC分类号： H01L29/0843 , H01L29/7831 , H01L29/8124
摘要： A field-effect transistor comprises an ancillary electrode in addition to the source, gate and drain electrodes. In this device, a semiconducting body bears source, gate and drain metallizations which define a main transistor. The metallization of the drain is separated into two parts which are separated by a channel on which is placed a second gate metallization defining a secondary transistor. The two parts of the drain are coupled by this secondary transistor, the channel of which is separated from the main channel. The secondary transistor can be used to control the gain of the main transistor or to modulate its amplitude signal or to mix two frequencies addressed on the two gates.
摘要翻译：场效应晶体管除了源极，栅极和漏极之外还包括辅助电极。在该器件中，半导体本体具有限定主晶体管的源极，栅极和漏极金属化物。漏极的金属化被分成两部分，它们被沟道分隔开，在其上放置有限定二级晶体管的第二栅极金属化。漏极的两个部分由该次级晶体管耦合，该二次晶体管的沟道与主通道分离。次级晶体管可用于控制主晶体管的增益或调制其幅度信号或混合在两个门上寻址的两个频率。

2. 发明授权

US4872049A Encapsulated low-noise ultra-high frequency semiconductor device 失效
标题翻译：封装的低噪声超高频半导体器件
公开(公告)号：US4872049A
公开(公告)日：1989-10-03
申请号：US133421
申请日：1987-12-15
申请人： Henri Derewonko , Didier Adam , Daniel Delagebeaudeuf , Patrick Resneau
发明人： Henri Derewonko , Didier Adam , Daniel Delagebeaudeuf , Patrick Resneau
IPC分类号： H01L23/66
CPC分类号： H01L24/48 , H01L23/66 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/45014 , H01L2224/451 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/48257 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49171 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01057 , H01L2924/01058 , H01L2924/014 , H01L2924/10329 , H01L2924/13063 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111
摘要： An ultra-high frequency transistor is mounted in a hermetically sealed package in order to be made usable and in order to improve its performance characteristics to the optimum level. To diminish the noise factor of an ultra-high frequency transistor, the geometrical dimensions of the gate must be reduced. But the transistor changes its impedance and maximum frequency and can no longer be used in a package or at the external impedance of the circuit. It has to be pre-matched by having a choke mounted between its gate, its drain and the corresponding external connections. Each choke consists of a long metallic wire, forming a hairpin, soldered inside the package between the gate metallization and the internal end of its external connection or between the drain metallization and the internal end of its external connection. The invention can be applied to low-noise ultra-high frequency amplifiers.
摘要翻译：超高频晶体管安装在气密密封的封装中，以便使其可用，并且将其性能特性提高到最佳水平。为了降低超高频晶体管的噪声系数，必须减小栅极的几何尺寸。但是晶体管改变其阻抗和最大频率，并且不能再用于封装或电路的外部阻抗。必须通过在其门，排水口和相应的外部连接之间安装扼流圈来预先匹配。每个扼流圈由长金属线组成，形成发夹，焊接在封装之间的栅极金属化和其外部连接的内部端之间或漏极金属化和其外部连接的内部端之间。本发明可以应用于低噪声超高频放大器。

3. 发明授权

US4974038A Microwave transistor with double heterojunction 失效
标题翻译：具有双异质结的微波晶体管
公开(公告)号：US4974038A
公开(公告)日：1990-11-27
申请号：US228167
申请日：1988-08-04
申请人： Daniel Delagebeaudeuf , Pierre Gibeau , Francoise Rambier , Jean J. Godard
发明人： Daniel Delagebeaudeuf , Pierre Gibeau , Francoise Rambier , Jean J. Godard
IPC分类号： H01L27/06 , H01L29/205 , H01L29/778
CPC分类号： H01L29/7783 , H01L27/0605 , H01L29/205
摘要： A microwave transistor made with group III-V materials, such as GaAs and AlGaAs, is disclosed. This transistor essentially comprises a double heterojunction formed by a first layer of material with a big forbidden gap, n doped for example, a second non-doped layer with a narrow forbidden gap and a third p doped layer with a wide forbidden gap. Under the effect of the electrical field, there may be formed, simultaneously or not simultaneously, in the second layer, a two-dimensional electron gas at the interface with the first layer and a two-dimensional hole gas at the interface with the third layer. By bringing the thickness of the layers into play, the characteristics of the n and p channels can be made symmetrical.
摘要翻译：公开了由III-V族材料制成的微波晶体管，例如GaAs和AlGaAs。该晶体管基本上包括由具有大的禁止间隙的第一材料层形成的双异质结，例如n掺杂，具有窄禁止间隙的第二非掺杂层和具有宽禁止间隙的第三p掺杂层。在电场的作用下，可能在第二层中同时形成或不同时形成与第一层界面的二维电子气和与第三层界面的二维空穴气体。通过使层的厚度发挥作用，n和p通道的特性可以对称。

4. 发明授权

US4176366A Avalanche transit time diode with heterojunction structure 失效
标题翻译：具有异质结结构的雪崩运行时间二极管
公开(公告)号：US4176366A
公开(公告)日：1979-11-27
申请号：US871881
申请日：1978-01-24
申请人： Daniel Delagebeaudeuf
发明人： Daniel Delagebeaudeuf
IPC分类号： H01L29/267 , H01L29/864 , H01L29/90 , H03B9/12
CPC分类号： H01L29/267 , H01L29/864
摘要： An avalanche diode of the IMPact Avalanche Transit Time (IMPATT) type with heterojunction structure of two different semiconductor materials, wherein a semiconductor junction P/N or N/P is located at the interface of the two materials. In order to improve the efficiency of the diode functioning as an oscillator, the impurity concentrations of the semiconductors are chosen so that the avalanche zone is located in one and only one of the materials, the thickness of the materials being determined in conjunction with the impurity concentrations to have transit zones of equal length, thus producing a "double drift" avalanche zone. In the case of Ge/Ga As the condition to be fulfilled by the impurity concentration K.sub.1 of Ge and the impurity concentration K.sub.2 of Ga AS is very simple:K.sub.1 =2/3K.sub.2
摘要翻译：具有两种不同半导体材料的异质结结构的IMPACT雪崩运行时间（IMPATT）型的雪崩二极管，其中半导体结P / N或N / P位于两种材料的界面处。为了提高作为振荡器起作用的二极管的效率，选择半导体的杂质浓度，使得雪崩区位于一种且仅一种材料中，材料的厚度与杂质结合确定浓度有相等长度的过境区，从而产生“双漂”的雪崩区。在Ge / Ga的情况下，由Ge的杂质浓度K1和Ga AS的杂质浓度K2所满足的条件非常简单：K1 = 2 / 3K2

5. 发明授权

US4471366A Field effect transistor with high cut-off frequency and process for forming same 失效
标题翻译：具有高截止频率的场效应晶体管及其形成工艺
公开(公告)号：US4471366A
公开(公告)日：1984-09-11
申请号：US353100
申请日：1982-03-01
申请人： Daniel Delagebeaudeuf , Tranc L. Nuyen
发明人： Daniel Delagebeaudeuf , Tranc L. Nuyen
IPC分类号： H01L21/338 , H01L29/08 , H01L29/43 , H01L29/778 , H01L29/78 , H01L29/80 , H01L29/812 , H01L29/161
CPC分类号： H01L29/0843 , H01L29/432 , H01L29/7787 , H01L29/802
摘要： There is disclosed a heterojunction field effect transistor with an accumulation of majority carriers functioning as a high cut-off frequency device in which the transistor uses the properties of the same type GaAs/Al.sub.x Ga.sub.1-x As N-doped junctions with the GaAs being weakly doped. This is used to produce a high mobility of charges in the accumulation layer and is effected by a structure in which the source and drain regions are partially covered by the gate region which is in turn covered by an insulation layer and thereby reduces the access resistances and increases the transition frequencies.
摘要翻译：公开了一种异质结场效应晶体管，其具有用作高截止频率器件的多数载流子的累积，其中晶体管使用与GaAs掺杂的GaAs相同类型的GaAs / Al x Ga 1-x As N掺杂结的性质。这用于在积聚层中产生电荷的高迁移率，并且通过其中源极和漏极区域被栅极区域部分地覆盖的结构来实现，栅极区域又由绝缘层覆盖，从而降低了入射电阻，增加转换频率。

6. 发明授权

US3992715A Low-noise thermo-ionic injection diode 失效
标题翻译：低噪声热离子注入二极管
公开(公告)号：US3992715A
公开(公告)日：1976-11-16
申请号：US611551
申请日：1975-09-08
申请人： Daniel Delagebeaudeuf , Didier Meignant
发明人： Daniel Delagebeaudeuf , Didier Meignant
IPC分类号： H01L29/861 , H01L29/864 , H01L29/90
CPC分类号： H01L29/864 , H01L29/861
摘要： A thermo-ionic diode with a very noise figure, using a special semiconductor structure, is provided. The structure comprises, upon a P.sup.+ doped silicon substrate, a succession of N-doped layers whose thicknesses and impurity ratios are designed to optimize the noise figure, a final P.sup.+ type layer covering the structure. The injecting junction of the diode is located at the transition between the said P.sup.+ layer and the nearest N type layer having a weak doping.
摘要翻译：提供了具有非常噪声系数的热离子二极管，使用了特殊的半导体结构。该结构包括在P +掺杂硅衬底上的一连续的N掺杂层，其厚度和杂质比设计为优化噪声系数，覆盖该结构的最终P +型层。二极管的注入结位于所述P +层和具有弱掺杂的最近的N型层之间的转变处。

7. 发明授权

US5367183A Semiconductor device with complementary transistors 失效
标题翻译：具有互补晶体管的半导体器件
公开(公告)号：US5367183A
公开(公告)日：1994-11-22
申请号：US43558
申请日：1993-04-07
申请人： Ernesto Perea , Daniel Delagebeaudeuf
发明人： Ernesto Perea , Daniel Delagebeaudeuf
IPC分类号： H01L21/8232 , H01L27/06 , H01L27/095 , H01L29/36 , H01L29/778 , H01L29/80 , H01L29/205
CPC分类号： H01L29/7786 , H01L27/0605 , H01L29/365
摘要： Disclosed is a system with at least two complementary transistors, having n and p channels but comprising a heterostructure of junctions between III-V group materials. In order to balance the threshold voltages in the two channels, namely the n (2DEG) and p (2DHG) channels, at least two p and n delta doped layers are included in two layers of the heterostructure, at levels included between the channels (2DEG, 2DHG) and the gate electrodes. The n delta doped layer is then removed by localized etching right above the p channel transistor. Application to fast logic circuits.
摘要翻译：公开了具有至少两个互补晶体管的系统，其具有n沟道和p沟道，但是包含III-V族材料之间的结的异质结构。为了平衡两个通道中的阈值电压，即n（2DEG）和p（2DHG）通道，至少两个p和n delta掺杂层包含在异质结构的两层中， 2DEG，2DHG）和栅电极。然后通过在p沟道晶体管正上方的局部蚀刻去除n-Δ掺杂层。应用于快速逻辑电路。

8. 发明授权

US4455564A Field effect transistor with a high cut-off frequency 失效
标题翻译：具有高截止频率的场效应晶体管
公开(公告)号：US4455564A
公开(公告)日：1984-06-19
申请号：US501552
申请日：1983-06-09
申请人： Daniel Delagebeaudeuf , Trong L. Nuyen
发明人： Daniel Delagebeaudeuf , Trong L. Nuyen
IPC分类号： H01L29/80 , H01L21/338 , H01L29/10 , H01L29/778 , H01L29/812
CPC分类号： H01L29/1075 , H01L29/7781
摘要： The invention relates to semiconductor devices of the transistor type operating at high frequencies.In order to make the drain/source current characteristic linear with the voltage applied to the grid and in order to retain a construction technology which is compatible with existing technologies the invention provides an Al.sub.x Ga.sub.1-x As layer between the substrate and the active GaAs layer. A supplementary, highly doped, GaAs layer and a supplementary semi-insulating Al.sub.x Ga.sub.1-x As layer modify the source and drain access resistances and the output resistance.Application to devices operating at ultra-high frequencies.
摘要翻译：本发明涉及以高频工作的晶体管类型的半导体器件。为了使漏极/源极电流特性与施加到电网的电压成线性关系，并且为了保持与现有技术相容的构造技术，本发明在衬底和有源GaAs层之间提供Al x Ga 1-x As层。补充的，高掺杂的GaAs层和辅助半绝缘Al x Ga 1-x As层修改源极和漏极访问电阻和输出电阻。应用于以超高频工作的设备。

9. 发明授权

US4186407A Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus 失效
标题翻译：具有镓，铟和砷的三元合金的异质结雪崩二极管和铟和磷的二元合金
公开(公告)号：US4186407A
公开(公告)日：1980-01-29
申请号：US929500
申请日：1978-07-31
申请人： Daniel Delagebeaudeuf , Thomas Pearsall
发明人： Daniel Delagebeaudeuf , Thomas Pearsall
IPC分类号： H01L29/205 , H01L29/864 , H01L29/90
CPC分类号： H01L29/864 , H01L29/205
摘要： An avalanche diode comprising a semiconducting heterojunction (Ga.sub.x In.sub.1-x As/InP) intended to oscillate as an "IMPATT" diode. It comprises a substrate of n.sup.+ doped monocrystalline InP supporting a series of three layers which are formed by epitaxy and of which the monocrystalline latices match one another namely an InP layer with n-type doping and two layers of Ga.sub.x In.sub.1-x As (best mode: Ga.sub.0.47 In.sub.0.53 As) with n-type and p.sup.+ -type doping respectively, these two layers being of minimal thickness. When a backward bias is applied to the p.sup.+ n-junction, the avalanche phenomenon takes place in the thin n-type layer of ternary alloy.
摘要翻译：包括旨在作为“IMPATT”二极管振荡的半导体异质结（GaxIn1-xAs / InP）的雪崩二极管。它包括n +掺杂单晶InP的衬底，其支持通过外延形成的一系列三层，其中单晶胶片彼此匹配，即具有n型掺杂的InP层和两层GaxIn1-xAs（最佳模式：Ga0 分别为n型和p +型掺杂，这两层的厚度最小。当向p + n结施加反向偏置时，在n型薄的n型层中发生雪崩现象。

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