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1. 发明申请

US20060194155A1 Resist pattern forming method and semiconductor device manufacturing method 审中-公开
标题翻译：抗蚀剂图案形成方法和半导体器件制造方法
公开(公告)号：US20060194155A1
公开(公告)日：2006-08-31
申请号：US11360502
申请日：2006-02-24
申请人： Daisuke Kawamura , Tsuyoshi Shibata , Shinichi Ito
发明人： Daisuke Kawamura , Tsuyoshi Shibata , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/2022 , G03F7/2028 , G03F7/70341 , G03F7/7045
摘要： A resist pattern forming method includes forming a resist film above a substrate. A first exposure is performed in which a specific region of an edge of the resist film is irradiated with light much enough to allow subsequent development to dissolve the resist film, thereby forming a latent image in the resist film at the edge. The resist film whose edge has been irradiated is rinsed. A second exposure is performed in which a desired pattern of light is projected onto an exposure region of the rinsed resist film via a projection optical system of an immersion exposure tool with liquid whose refractive index is larger than that of air existing between the exposure region and the substrate-side face of a component element closest to the substrate in the projection optical system. Development on the exposure region of the resist film is performed.
摘要翻译：抗蚀剂图案形成方法包括在基板上形成抗蚀剂膜。进行第一曝光，其中抗蚀剂膜的边缘的特定区域被足够多的光照射以允许随后的显影以溶解抗蚀剂膜，从而在边缘处在抗蚀剂膜中形成潜像。冲洗其边缘的抗蚀剂膜。进行第二次曝光，其中期望的图案通过浸没曝光工具的投影光学系统投射到冲洗的抗蚀剂膜的曝光区域上，其中折射率大于曝光区域和在投影光学系统中最靠近基板的元件元件的基板侧面。进行抗蚀剂膜的曝光区域的显影。

2. 发明授权

US07683291B2 Substrate processing method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的基板加工方法及其制造方法
公开(公告)号：US07683291B2
公开(公告)日：2010-03-23
申请号：US11411139
申请日：2006-04-26
申请人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
发明人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
IPC分类号： A21B1/00 , C23C16/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D3/0084 , H01L21/67109
摘要： According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.
摘要翻译：根据本发明的一个方面，提供了一种单一的基板处理方法，其通过使用具有打开/关闭机构的加热装置连续加热待加工的含有溶剂的薄膜的基板处理方法，该加热装置包括供给含有在待处理的第一基板的处理和待处理的第二基板的处理之间的打开/关闭机构的闭合状态下，加热到加热装置的第一基板的膜中所含的溶剂。

3. 发明授权

US07510341B2 Temperature calibration method for baking processing apparatus, adjustment method for development processing apparatus, and method of manufacturing semiconductor apparatus 失效
标题翻译：烘烤处理装置的温度校准方法，显影处理装置的调整方法以及半导体装置的制造方法
公开(公告)号：US07510341B2
公开(公告)日：2009-03-31
申请号：US10878310
申请日：2004-06-29
申请人： Kei Hayasaki , Daizo Mutoh , Masafumi Asano , Tadahito Fujisawa , Tsuyoshi Shibata , Shinichi Ito
发明人： Kei Hayasaki , Daizo Mutoh , Masafumi Asano , Tadahito Fujisawa , Tsuyoshi Shibata , Shinichi Ito
IPC分类号： G03D5/00
CPC分类号： G03F7/70683 , G03F7/40
摘要： A temperature calibration method for a baking apparatus comprising forming a photoresist film onto a substrate, forming a latent image of a dose monitor mark onto the photoresist film, preparing baking processing apparatuses, baking the substrate or another substrate by temperature settings performed every repeat of a series of the forming the resist film and the forming the latent image with each prepared baking apparatus, cooling the baking-processed substrate, measuring a length of the latent image of the dose monitor mark after the cooling or a length of a dose monitor mark which being obtained by developing the resist film, determining relationship between a temperature setting and an effective dose in advance, and calibrating temperature settings corresponding to the each baking processing apparatus to be obtained a predetermined effective dose on the basis of the determining relationship and the measured length corresponding to the each baking processing apparatus.
摘要翻译：一种用于烘烤设备的温度校准方法，包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成剂量监测标记的潜像，制备烘烤处理设备，通过每次重复执行的温度设置来烘烤基板或另一个基板一系列形成抗蚀剂膜并用每个制备的烘烤装置形成潜像，冷却烘焙处理的基材，测量冷却后的剂量监测标记的潜像的长度或剂量监测标记的长度，通过显影抗蚀剂膜，预先确定温度设定和有效剂量之间的关系，并且基于确定关系和测量长度来校准与每个烘焙处理设备相应的温度设置以获得预定有效剂量对应于每个烘焙处理设备。

4. 发明申请

US20060194449A1 Resist pattern forming method and method of manufacturing semiconductor device 审中-公开
标题翻译：抗蚀剂图案形成方法和半导体器件的制造方法
公开(公告)号：US20060194449A1
公开(公告)日：2006-08-31
申请号：US11350127
申请日：2006-02-09
申请人： Tomoyuki Takeishi , Shinichi Ito , Yasunobu Onishi , Tsuyoshi Shibata
发明人： Tomoyuki Takeishi , Shinichi Ito , Yasunobu Onishi , Tsuyoshi Shibata
IPC分类号： H01L21/31
CPC分类号： G03F7/38 , G03F7/0045 , H01L21/0276
摘要： A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.
摘要翻译：抗蚀剂图形形成方法包括在基板上形成化学放大型抗蚀剂膜，通过照射能量射线在液体中形成潜像，使其与抗蚀剂膜的表面接触，使抗蚀剂膜的温度升高到第一温度在形成潜像和接触之后，第一温度低于在抗蚀剂膜中发生酸催化反应的反应开始温度，将抗蚀剂膜的温度保持在第一温度预定时间，增加抗蚀剂膜的温度与第二温度不低于经过规定时间后的反应开始温度，将抗蚀剂膜的温度降低到第二温度至比反应开始温度低的温度，并使抗蚀剂显影电影降温后。

5. 发明申请

US20050008979A1 Temperature calibration method for baking processing apparatus, adjustment method for development processing apparatus, and method of manufacturing semiconductor apparatus 失效
标题翻译：烘烤处理装置的温度校准方法，显影处理装置的调整方法以及半导体装置的制造方法
公开(公告)号：US20050008979A1
公开(公告)日：2005-01-13
申请号：US10878310
申请日：2004-06-29
申请人： Kei Hayasaki , Daizo Mutoh , Masafumi Asano , Tadahito Fujisawa , Tsuyoshi Shibata , Shinichi Ito
发明人： Kei Hayasaki , Daizo Mutoh , Masafumi Asano , Tadahito Fujisawa , Tsuyoshi Shibata , Shinichi Ito
IPC分类号： G03F7/26 , G03F7/20 , G03F7/40 , H01L21/027 , H01L23/544
CPC分类号： G03F7/70683 , G03F7/40
摘要： A temperature calibration method for a baking apparatus comprising forming a photoresist film onto a substrate, forming a latent image of a dose monitor mark onto the photoresist film, preparing baking processing apparatuses, baking the substrate or another substrate by temperature settings performed every repeat of a series of the forming the resist film and the forming the latent image with each prepared baking apparatus, cooling the baking-processed substrate, measuring a length of the latent image of the dose monitor mark after the cooling or a length of a dose monitor mark which being obtained by developing the resist film, determining relationship between a temperature setting and an effective dose in advance, and calibrating temperature settings corresponding to the each baking processing apparatus to be obtained a predetermined effective dose on the basis of the determining relationship and the measured length corresponding to the each baking processing apparatus.
摘要翻译：一种用于烘烤设备的温度校准方法，包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成剂量监测标记的潜像，制备烘烤处理设备，通过每次重复执行的温度设置来烘烤基板或另一个基板一系列形成抗蚀剂膜并用每个制备的烘烤装置形成潜像，冷却烘焙处理的基材，测量冷却后的剂量监测标记的潜像的长度或剂量监测标记的长度，通过显影抗蚀剂膜，预先确定温度设定和有效剂量之间的关系，并且基于确定关系和测量长度来校准与每个烘焙处理设备相应的温度设置以获得预定有效剂量对应于每个烘焙处理设备。

6. 发明申请

US20090109414A1 LITHOGRAPHY APPARATUS, METHOD OF FORMING PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：光刻设备，形成图案的方法和制造半导体器件的方法
公开(公告)号：US20090109414A1
公开(公告)日：2009-04-30
申请号：US12341179
申请日：2008-12-22
申请人： SHINICHI ITO , Tsuyoshi Shibata
发明人： SHINICHI ITO , Tsuyoshi Shibata
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G03F7/70991 , G03F7/70341 , G03F7/70858 , G03F7/70916 , G03F7/70925
摘要： A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a trans-porting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.
摘要翻译：光刻设备包括：抗蚀剂处理设备，用于执行在基板上施加抗蚀剂的工艺;加热基板上的抗蚀剂膜的工艺;以及在基板上显影抗蚀剂膜的工艺;浸渍曝光设备，包括：投影光学系统，其将光掩模上的图案的图像投影到抗蚀剂膜上，并且被配置为通过位于投影光学系统和抗蚀剂膜之间的光路上的液体进行曝光;连接到抗蚀剂处理和浸没曝光的传输装置在抗蚀剂处理和浸渍曝光装置之间进行基板传送的装置，以及温度/湿度控制装置，其被配置为基于温度和湿度来控制至少一个抗蚀剂处理和传送装置中的温度和湿度中的至少一个，浸湿曝光装置的湿度。

7. 发明授权

US07477353B2 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device 失效
标题翻译：平版印刷设备，形成图案的方法和制造半导体器件的方法
公开(公告)号：US07477353B2
公开(公告)日：2009-01-13
申请号：US11174722
申请日：2005-07-06
申请人： Shinichi Ito , Tsuyoshi Shibata
发明人： Shinichi Ito , Tsuyoshi Shibata
IPC分类号： G03B27/42 , G03B27/52 , G03B27/32 , G03F7/00
CPC分类号： G03F7/70991 , G03F7/70341 , G03F7/70858 , G03F7/70916 , G03F7/70925
摘要： A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.
摘要翻译：光刻设备包括：抗蚀剂处理设备，用于执行在基板上施加抗蚀剂的工艺;加热基板上的抗蚀剂膜的工艺;以及在基板上显影抗蚀剂膜的工艺;浸渍曝光设备，包括：投影光学系统，其将光掩模上的图案的图像投影到抗蚀剂膜上，并且被配置为通过位于投影光学系统和抗蚀剂膜之间的光路上的液体进行曝光，连接到抗蚀剂处理和浸没曝光装置的传送装置在抗蚀剂处理和浸没曝光装置之间执行基板的传送，以及温度/湿度控制装置，其被配置为基于温度和湿度控制至少一个抗蚀剂处理和输送装置中的温度和湿度，湿度浸渍曝光设备。

8. 发明申请

US20060289431A1 Substrate processing method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的基板加工方法及其制造方法
公开(公告)号：US20060289431A1
公开(公告)日：2006-12-28
申请号：US11411139
申请日：2006-04-26
申请人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
发明人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
IPC分类号： F27B5/14 , F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D3/0084 , H01L21/67109
摘要： According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.
摘要翻译：根据本发明的一个方面，提供了一种单一的基板处理方法，其通过使用具有打开/关闭机构的加热装置连续加热待加工的含有溶剂的薄膜的基板处理方法，该加热装置包括供给含有在待处理的第一基板的处理和待处理的第二基板的处理之间的打开/关闭机构的闭合状态下，加热到加热装置的第一基板的膜中所含的溶剂。

9. 发明授权

US07796237B2 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device 失效
标题翻译：平版印刷设备，形成图案的方法和制造半导体器件的方法
公开(公告)号：US07796237B2
公开(公告)日：2010-09-14
申请号：US12341179
申请日：2008-12-22
申请人： Shinichi Ito , Tsuyoshi Shibata
发明人： Shinichi Ito , Tsuyoshi Shibata
IPC分类号： G03B27/52 , G03B27/42 , G03B27/32 , G03D5/00
CPC分类号： G03F7/70991 , G03F7/70341 , G03F7/70858 , G03F7/70916 , G03F7/70925
摘要： A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.
摘要翻译：光刻设备包括：抗蚀剂处理设备，用于执行在基板上施加抗蚀剂的工艺;加热基板上的抗蚀剂膜的工艺;以及在基板上显影抗蚀剂膜的工艺;浸渍曝光设备，包括：投影光学系统，其将光掩模上的图案的图像投影到抗蚀剂膜上，并且被配置为通过位于投影光学系统和抗蚀剂膜之间的光路上的液体进行曝光，连接到抗蚀剂处理和浸没曝光装置的传送装置在抗蚀剂处理和浸没曝光装置之间执行基板的传送，以及温度/湿度控制装置，其被配置为基于温度和湿度控制至少一个抗蚀剂处理和输送装置中的温度和湿度，湿度浸渍曝光设备。

10. 发明申请

US20060007420A1 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device 失效
公开(公告)号：US20060007420A1
公开(公告)日：2006-01-12
申请号：US11174722
申请日：2005-07-06
申请人： Shinichi Ito , Tsuyoshi Shibata
发明人： Shinichi Ito , Tsuyoshi Shibata
IPC分类号： G03B27/42
CPC分类号： G03F7/70991 , G03F7/70341 , G03F7/70858 , G03F7/70916 , G03F7/70925
摘要： A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.

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