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1. 发明申请

US20030056890A1 Thin film forming apparatus and thin film forming method 有权
标题翻译：薄膜形成装置和薄膜形成方法
公开(公告)号：US20030056890A1
公开(公告)日：2003-03-27
申请号：US10216002
申请日：2002-08-08
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tsutomu Ueyama , Izuru Iseki
IPC分类号： B32B035/00
CPC分类号： H01L21/67092 , H01L21/4867 , H01L21/768 , H01L21/76877 , H01L23/49816 , H01L51/0013 , H01L2224/16 , H01L2924/01055 , H01L2924/01078 , H01L2924/15311 , H05K3/20 , Y10T29/5313 , Y10T156/1705
摘要： Apparatus for forming a thin film pattern on the surface of a substrate. This apparatus is provided with: a transfer member having a thin film carrying surface which carries a thin film pattern; and a thin film transfer mechanism for joining the transfer member to a substrate for transferring, to the substrate, the thin film pattern on the thin film carrying surface. The thin film pattern may be a wiring film pattern. A gelatinous film may previously be formed on the substrate, and the thin film pattern may be transferred as embedded in the gelatinous film.
摘要翻译：用于在基板的表面上形成薄膜图案的装置。该装置设置有：具有承载薄膜图案的薄膜承载表面的转印构件; 以及用于将转印构件接合到用于将薄膜承载表面上的薄膜图案转印到基板的薄膜转移机构。薄膜图案可以是布线膜图案。可以预先在基底上形成凝胶状膜，并且可以将薄膜图案嵌入凝胶膜中转移。

2. 发明申请

US20030064609A1 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20030064609A1
公开(公告)日：2003-04-03
申请号：US10256120
申请日：2002-09-25
申请人： Dainippon Screen Mfg. Co. , Ltd.
发明人： Izuru Iseki , Tsutomu Ueyama
IPC分类号： H01L021/44 , H01L021/31 , H01L021/469
CPC分类号： H01L21/6715 , H01L21/31058 , H01L21/67766 , H01L21/67778 , H01L21/76819
摘要： A substrate processing apparatus provided with: a coating processing section for supplying a coating solution to a substrate; a pressure processing section for pressurizing a coating film formed on the substrate; and a developing processing section for supplying a developing solution to the substrate having the coating film selectively exposed to light with the use of an exposure mask. The pressure processing section may be arranged such that a pressing plate having a flat face is brought into pressure contact with the coating film.
摘要翻译：一种基板处理装置，具备：将涂布液供给到基板的涂布处理部，压力处理部，对形成在基板上的涂膜进行加压; 以及显影处理部，用于通过使用曝光掩模将显影液供给到具有选择性地暴露于光的涂膜的基板。压力处理部可以布置成使得具有平坦表面的压板与涂膜压力接触。

3. 发明申请

US20030183167A1 Substrate processing apparatus and slit nozzle 失效
标题翻译：基板加工装置和狭缝喷嘴
公开(公告)号：US20030183167A1
公开(公告)日：2003-10-02
申请号：US10391910
申请日：2003-03-18
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Hiroyuki Kitazawa , Tsutomu Ueyama
IPC分类号： B05C005/00
CPC分类号： C03C17/002 , B05C5/0258
摘要： A slit nozzle includes a solution feeding mechanism having an elastic element and a plurality of piezoelectric devices and embedded in a side surface of a flow passage near a slit in the slit nozzle. Control is effected so that the piezoelectric devices are vibrated to cause the elastic element to produce traveling waves toward the slit. A resist solution serving as a processing solution is pumped by the traveling waves, thereby to be discharged through the slit toward a substrate. This provides a substrate processing apparatus capable of smoothly discharging the processing solution to accomplish high discharge accuracy.
摘要翻译：狭缝喷嘴包括具有弹性元件和多个压电装置的溶液供给机构，并且嵌入在狭缝喷嘴中的狭缝附近的流动通道的侧表面中。进行控制使得压电装置振动以使弹性元件产生朝向狭缝的行波。作为处理液的抗蚀剂溶液被行波泵送，从而通过狭缝朝向基板排出。这提供了能够顺利地排出处理液以实现高放电精度的基板处理装置。

4. 发明申请

US20030079829A1 Thin film forming apparatus and thin film forming method 失效
标题翻译：薄膜形成装置和薄膜形成方法
公开(公告)号：US20030079829A1
公开(公告)日：2003-05-01
申请号：US10263513
申请日：2002-10-01
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tsutomu Ueyama , Izuru Iseki
IPC分类号： B32B035/00 , B23K037/00
CPC分类号： B32B38/10 , B32B37/025 , B32B2457/14 , Y10T156/171 , Y10T156/1744 , Y10T156/19
摘要： With a thin film bearing surface of a substrate directed toward an insulation film which is formed on a surface of a quartz plate, the substrate and the quartz plate are moved closer to each other and the insulation film is tightly adhered to the thin film bearing surface (adhering process). The quartz plate alone is then selectively peeled off, thereby completing transfer of the insulation film onto the substrate (peeling process). In this manner, the insulation film is disposed on the thin film bearing surface of the substrate, and a transportation mechanism then houses the substrate in a substrate cassette. Meanwhile, after the quartz plate is transported by the transportation mechanism to a cleaning unit and cleaned by the cleaning unit (cleaning process), the quartz plate is returned to a plate-like member cassette and waits in this cassette until reused next time.
摘要翻译：利用形成在石英板表面上的朝向绝缘膜的基板的薄膜承载面，基板和石英板彼此靠近移动，并且绝缘膜紧密地附着在薄膜承载表面上（附着工序）。然后选择性地剥离石英板，从而完成将绝缘膜转移到基板上（剥离过程）。以这种方式，绝缘膜设置在基板的薄膜承载表面上，并且输送机构然后将基板容纳在基板盒中。同时，在将石英板由输送机构输送到清洁单元并通过清洁单元进行清洁（清洗处理）之后，将石英板返回到板状构件盒中，并在该盒中等待直到重新使用。

5. 发明申请

US20040112890A1 Apparatus for and method of heat treatment by light irradiation 有权
标题翻译：光照射加热处理装置及方法
公开(公告)号：US20040112890A1
公开(公告)日：2004-06-17
申请号：US10729460
申请日：2003-12-05
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tatsufumi Kusuda , Tsutomu Ueyama
IPC分类号： A21B002/00 , H05B003/06
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A semiconductor wafer is held by support pins horizontally. A susceptor and a heating plate are moved upwardly so that the semiconductor wafer is transferred from the support pins to the susceptor. At this time, a gas layer is sandwiched between the upper surface of the susceptor and the lower surface of the semiconductor wafer to cause the semiconductor wafer to float over the upper surface of the susceptor for about seventy seconds immediately after the semiconductor wafer is mounted on the upper surface of the susceptor. Then, flash lamps are lit up to perform flash heating while the semiconductor wafer is floating over the upper surface of the susceptor. Even when flashlight irradiation causes rapid thermal expansion of the wafer surface, the semiconductor wafer does not suffer a great stress. This can prevent the semiconductor wafer from breaking.
摘要翻译：半导体晶片由支撑销水平地保持。感受器和加热板向上移动，使得半导体晶片从支撑销转移到基座。此时，气氛层被夹在基座的上表面和半导体晶片的下表面之间，以使得半导体晶片在半导体晶片安装之后立即漂浮在基座的上表面上大约七十秒感受器的上表面。然后，闪光灯点亮以进行闪光加热，同时半导体晶片浮在基座的上表面上。即使当手电筒照射导致晶片表面的快速热膨胀时，半导体晶片也不会承受很大的应力。这可以防止半导体晶片破裂。

6. 发明申请

US20030056725A1 Thin film forming apparatus and thin film forming method 有权
标题翻译：薄膜形成装置和薄膜形成方法
公开(公告)号：US20030056725A1
公开(公告)日：2003-03-27
申请号：US10251475
申请日：2002-09-18
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tsutomu Ueyama , Izuru Iseki , Norio Sato , Katsuyuki Machida , Hakaru Kyuragi
IPC分类号： B05C011/00 , C23C016/00
CPC分类号： B32B37/10 , B05D1/286 , B32B37/025 , B32B38/0036 , B32B41/00 , B32B2309/12 , B32B2309/68 , B32B2457/14 , H01L21/67092 , H01L21/67253
摘要： Prior to the start of transfer of an insulation film to a substrate, the degree of opening of a butterfly valve is set small so that evaporation of a solvent component contained in the insulation film is suppressed and the fluidity of the insulation film is ensured at the start of the transfer. On the other hand, the butterfly valve is totally opened at the start of the transfer, so that the pressure inside a thin film forming chamber rapidly decreases and transfer of the insulation film to the substrate is performed always in a low-pressure state (high-degree of vacuum).
摘要翻译：在开始将绝缘膜转移到基板之前，将蝶形阀的开度设定得较小，从而抑制包含在绝缘膜中的溶剂成分的蒸发，并且确保绝缘膜的流动性开始转账。另一方面，蝶阀在转移开始时完全打开，使得薄膜形成室内的压力快速下降，绝缘膜向基板的传递始终处于低压状态（高 - 真空度）。

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