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1. 发明申请

US20040264950A1 Light irradiation type thermal processing apparatus and method of adjusting light irradiation intensity 有权
标题翻译：光照式热处理装置及调整光照强度的方法
公开(公告)号：US20040264950A1
公开(公告)日：2004-12-30
申请号：US10850632
申请日：2004-05-20
申请人： Dainippon Screen Mfg., Co., Ltd.
发明人： Tatsufumi Kusuda
IPC分类号： F26B003/30 , A21B002/00
CPC分类号： H01L21/67115
摘要： A magnetic ring of ferromagnetic is attached to a wire for supplying electric power to a flash lamp. The magnetic ring is removable and is easily attachable to and detachable from the wire. When turning on the flash lamp, a high electrical current momentarily flows through the wire and intense magnetic fields occur around the wire, so that the magnetic ring attached around the wire is momentarily magnetized. As the result, induced electromotive force is generated and the current momentarily flowing through the wire is weakened, so that the irradiation intensity of the flash lamp is slightly lowered. In contrast, if desired to slightly increase the irradiation intensity of the flash lamp, the magnetic ring may be detached from the wire.
摘要翻译：将铁磁性磁环连接到用于向闪光灯供电的电线。磁环是可拆卸的，并且容易地附接到电线上并可从电缆中拆卸。当打开闪光灯时，高电流瞬间流过电线，并且在电线周围发生强烈的磁场，使得附着在电线周围的磁环瞬间被磁化。结果，产生感应电动势，瞬间流过电线的电流减弱，使得闪光灯的照射强度稍微降低。相反，如果需要略微增加闪光灯的照射强度，则磁环可以从导线分离。

2. 发明申请

US20040037543A1 Light irradiation type thermal processing apparatus 有权
标题翻译：光照式热处理装置
公开(公告)号：US20040037543A1
公开(公告)日：2004-02-26
申请号：US10645067
申请日：2003-08-21
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tatsufumi Kusuda , Hiromi Murayama , Yasuhiro Imaoka
IPC分类号： A21B002/00
CPC分类号： H01L21/67115 , H05B3/0047
摘要： In a light diffuser, a strong light diffusion processing is performed to a lamp corresponding part located in a vertical immediate downward direction of each of a plurality of flash lamps, and a weak light diffusion processing is performed to an inter-lamp corresponding part located between lamp corresponding parts adjacent to each other. Thereby, the light transmittance of the lamp corresponding part is lower than that of the inter-lamp corresponding part. Light that is emitted from each of the flash lamps and directed to a vertical immediate downward direction is diffused intensely, while reducing the degree of light diffusion at a location immediately below space between the adjacent flash lamps, thereby improving in-plane uniformity of illumination distribution on a semiconductor wafer. This enables to provide a thermal processing apparatus capable of improving in-plane uniformity of illumination distribution on a substrate.
摘要翻译：在光扩散器中，对位于多个闪光灯中的每一个的垂直立即向下方向的灯对应部分进行强光扩散处理，并且对位于灯对应部件相邻。因此，灯对应部分的透光率低于灯间对应部分的透光率。从每个闪光灯发射并被引导到垂直立即向下方向的光被强烈扩散，同时减少在相邻闪光灯之间的空间之下的位置处的光漫射程度，从而提高照明分布的面内均匀性在半导体晶片上。这能够提供能够提高基板上的照明分布的面内均匀性的热处理装置。

3. 发明申请

US20040016743A1 Substantially-uniform-temperature annealing 失效
标题翻译：基本均匀的温度退火
公开(公告)号：US20040016743A1
公开(公告)日：2004-01-29
申请号：US10623877
申请日：2003-07-21
发明人： Shariar Motakef , Serhat Yesilyurt
IPC分类号： F26B019/00 , A21B002/00
CPC分类号： G02B5/3083 , C30B29/12 , C30B33/00 , G02B1/02 , Y10T117/1016
摘要： A system for heating optical members includes a thermally-conductive inner housing defining an interior volume for receiving an optical member to be heated, a thermally-insulative outer housing at least partially containing the thermally-conductive inner housing, and a heating structure disposed outside the inner housing and configured to provide heat through the thermally-conductive inner housing and into the interior volume defined by the inner housing.
摘要翻译：一种用于加热光学构件的系统包括限定用于接收待加热的光学构件的内部空间的导热内部壳体，至少部分地包含导热内部壳体的热绝缘外部壳体，以及设置在内壳体并且被配置为通过导热内壳体提供热量并进入由内壳体限定的内部空间。

4. 发明申请

US20010025841A1 Process chamber cooling 有权
标题翻译：过程室冷却
公开(公告)号：US20010025841A1
公开(公告)日：2001-10-04
申请号：US09846668
申请日：2001-04-30
发明人： Chenyu Pan
IPC分类号： F27D011/00 , A21B002/00 , F26B003/30
CPC分类号： H01L21/67115 , H01L21/324
摘要： A method is provided for the rapid cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfacesnullafter a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.
摘要翻译：提供一种用于通过辐射处理在晶片加热之后快速冷却经处理的半导体晶片的方法。该方法包括在经处理的晶片和高反射表面之后引入辐射吸收材料元件 - 在通过辐射工艺进行晶片加热之后。高度反射的表面反射和重新引导来自处理过的晶片及其周围部件的辐射能回到处理过的晶片，阻碍其冷却过程。辐射吸收材料元件一旦在经处理的晶片和高度反射的表面之间吸收来自加工晶片及其周围部件的辐射，加速其冷却过程。因此，为冷却过程节省了大量时间，从而提高了整体晶圆生产量。

5. 发明申请

US20040240864A1 Sauna far infrared heat emitting article and method 审中-公开
标题翻译：桑拿远红外线散发物品及方法
公开(公告)号：US20040240864A1
公开(公告)日：2004-12-02
申请号：US10449850
申请日：2003-05-30
发明人： Chang Hwan Lee
IPC分类号： F26B019/00 , A21B002/00
CPC分类号： F24C7/043
摘要： A far infrared heat emitting article for a sauna. The article disburses far infrared heat substantially evenly, with reduced heat discharge, at a lower surface temperature, and at a longer wavelength and a lower voltage.
摘要翻译：用于桑拿的远红外发热物品。该物品基本均匀地散发远红外线热量，在较低的表面温度和较长的波长和较低的电压下放热减少。

6. 发明申请

US20040112890A1 Apparatus for and method of heat treatment by light irradiation 有权
标题翻译：光照射加热处理装置及方法
公开(公告)号：US20040112890A1
公开(公告)日：2004-06-17
申请号：US10729460
申请日：2003-12-05
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tatsufumi Kusuda , Tsutomu Ueyama
IPC分类号： A21B002/00 , H05B003/06
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A semiconductor wafer is held by support pins horizontally. A susceptor and a heating plate are moved upwardly so that the semiconductor wafer is transferred from the support pins to the susceptor. At this time, a gas layer is sandwiched between the upper surface of the susceptor and the lower surface of the semiconductor wafer to cause the semiconductor wafer to float over the upper surface of the susceptor for about seventy seconds immediately after the semiconductor wafer is mounted on the upper surface of the susceptor. Then, flash lamps are lit up to perform flash heating while the semiconductor wafer is floating over the upper surface of the susceptor. Even when flashlight irradiation causes rapid thermal expansion of the wafer surface, the semiconductor wafer does not suffer a great stress. This can prevent the semiconductor wafer from breaking.
摘要翻译：半导体晶片由支撑销水平地保持。感受器和加热板向上移动，使得半导体晶片从支撑销转移到基座。此时，气氛层被夹在基座的上表面和半导体晶片的下表面之间，以使得半导体晶片在半导体晶片安装之后立即漂浮在基座的上表面上大约七十秒感受器的上表面。然后，闪光灯点亮以进行闪光加热，同时半导体晶片浮在基座的上表面上。即使当手电筒照射导致晶片表面的快速热膨胀时，半导体晶片也不会承受很大的应力。这可以防止半导体晶片破裂。

7. 发明申请

US20030206732A1 Heat-treating methods and systems 有权
标题翻译：热处理方法和系统
公开(公告)号：US20030206732A1
公开(公告)日：2003-11-06
申请号：US10427094
申请日：2003-04-30
发明人： David Malcolm Camm , J. Kiefer Elliott
IPC分类号： A21B002/00
CPC分类号： H01L21/324 , C30B31/12 , F27D19/00 , F27D2019/0003 , F27D2099/0026 , H01L21/268 , H01L21/2686 , H01L21/67115 , Y10S438/928
摘要： Methods and systems for heat-treating a workpiece are disclosed. One method involves increasing a temperature of the workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time following the first time period than the first time period. Another method involves pre-heating the workpiece from an initial temperature to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature by an amount less than or equal to about one-fifth of a difference between the intermediate and initial temperatures. Another method involves irradiating a first side of the workpiece to pre-heat the workpiece to an intermediate temperature, and irradiating a second side of the workpiece to heat the second side to a desired temperature greater than the intermediate temperature.
摘要翻译：公开了用于热处理工件的方法和系统。一种方法包括将工件的温度在第一时间段内增加到中间温度，并且将工件的表面加热到大于中间温度的期望温度，加热在第一时间段之后的更短时间内开始比第一时间段时间段。另一种方法包括将工件从初始温度预热到中间温度，并且将工件的表面加热到大于中间温度的期望温度，其量小于或等于中间和初始温度。另一种方法包括照射工件的第一面以将工件预加热到中间温度，并且照射工件的第二侧以将第二侧加热至大于中间温度的所需温度。

8. 发明申请

US20030081945A1 Heat treating apparatus and method 审中-公开
标题翻译：热处理装置及方法
公开(公告)号：US20030081945A1
公开(公告)日：2003-05-01
申请号：US10267127
申请日：2002-10-07
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tatsufumi Kusuda
IPC分类号： A21B002/00
CPC分类号： H01L21/67115 , C30B31/12 , H01L21/324
摘要： A heat treating apparatus for heat treating a substrate by irradiating the substrate with light includes a heat treating chamber for receiving the substrate, a heating plate for preheating the substrate through a thermal diffuser plate, xenon flashlamps for heating the substrate preheated by the heating plate, to a treating temperature by irradiating the substrate with flashes of light, and a decompression mechanism for decompressing the heat treating chamber when the xenon flashlamps heat the substrate.
摘要翻译：用于通过用光照射基板对基板进行热处理的热处理装置包括用于接收基板的热处理室，用于通过热扩散板预热基板的加热板，用于加热由加热板预热的基板的氙闪光灯，通过用闪光灯照射基板到处理温度，以及当氙闪光灯加热基板时减压热处理室的减压机构。

9. 发明申请

US20040170407A1 Substrate support 有权
标题翻译：基材支持
公开(公告)号：US20040170407A1
公开(公告)日：2004-09-02
申请号：US10376857
申请日：2003-02-27
申请人： Applied Materials, Inc.
发明人： Andrew Nguyen , Gerhard Schneider , Akihiro Hosokawa , Takayuki Matsumoto
IPC分类号： A21B002/00 , F26B019/00
CPC分类号： H01L21/6875 , C23C16/4581 , C23C16/4583 , C23C16/481 , H01L21/6734
摘要： An apparatus for supporting a substrate is provided having a ball adapted to minimize damage between the substrate support and the substrate supported thereon. In one embodiment, an apparatus for supporting a substrate includes a ball disposed on an inclined ball support surface. The ball support surface is adapted to bias the ball toward one side of the ball support surface thereby providing space for the ball to roll as the substrate supported thereon changes in length when exposed to thermal influences. In another embodiment, the apparatus further comprises a cage adapted to capture the ball to the ball support surface.
摘要翻译：提供了一种用于支撑衬底的装置，其具有适于最小化衬底支撑件和支撑在其上的衬底之间的损伤的球。在一个实施例中，用于支撑衬底的装置包括设置在倾斜球支撑表面上的球。球支撑表面适于将球朝向球支撑表面的一侧偏置，从而当被支撑在其上的基板在暴露于热影响时在长度上变化时为球提供空间。在另一个实施例中，该装置还包括适于将球捕获到球支撑表面的笼。

10. 发明申请

US20020067918A1 Heat-treating methods and systems 有权
标题翻译：热处理方法和系统
公开(公告)号：US20020067918A1
公开(公告)日：2002-06-06
申请号：US09729747
申请日：2000-12-04
发明人： David Malcolm Camm , J. Kiefer Elliott
IPC分类号： A21B002/00 , F27D011/00
CPC分类号： H01L21/324 , C30B31/12 , F27D19/00 , F27D2019/0003 , F27D2099/0026 , H01L21/268 , H01L21/2686 , H01L21/67115 , Y10S438/928
摘要： Methods and systems for heat-treating a workpiece are disclosed. A first method involves increasing a temperature of the workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time following the first time period than the first time period. A second method involves pre-heating the workpiece from an initial temperature to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature by an amount less than or equal to about one-fifth of a difference between the intermediate and initial temperatures. A third method involves irradiating a first side of the workpiece to pre-heat the workpiece to an intermediate temperature, and irradiating a second side of the workpiece to heat the second side to a desired temperature greater than the intermediate temperature.
摘要翻译：公开了用于热处理工件的方法和系统。第一种方法包括将工件的温度在第一时间段内增加到中间温度，并且将工件的表面加热到大于中间温度的期望温度，加热在第一时间段之后的更短时间内开始比第一时间段第二种方法包括将工件从初始温度预热到中间温度，并且将工件的表面加热到大于中间温度的期望温度小于或等于中间温度的约五分之一的量中间和初始温度。第三种方法包括照射工件的第一侧以将工件预加热到中间温度，并且照射工件的第二面以将第二侧加热到大于中间温度的所需温度。

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