会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Focus ring, plasma etching apparatus and plasma etching method
    • 聚焦环,等离子体蚀刻装置和等离子体蚀刻方法
    • US08192577B2
    • 2012-06-05
    • US12491962
    • 2009-06-25
    • Daiki SatohHideyuki KobayashiMasato Horiguchi
    • Daiki SatohHideyuki KobayashiMasato Horiguchi
    • H01L21/00
    • H01L21/67069H01J37/32642Y10S156/915
    • In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    • 在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中,安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域,其中 平均表面粗糙度小,使得在蚀刻处理期间产生的反应产物不被捕获以沉积,并且在平均表面粗糙度大的第一区域的外侧的第二区域,使得产生的反应产物 在蚀刻过程中被捕获以被沉积。 第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分,而在等离子体蚀刻装置中配备聚焦环,并且在基板上进行等离子体蚀刻。
    • 3. 发明授权
    • Focus ring, plasma etching apparatus and plasma etching method
    • 聚焦环,等离子体蚀刻装置和等离子体蚀刻方法
    • US07618515B2
    • 2009-11-17
    • US11270461
    • 2005-11-10
    • Daiki SatohHideyuki KobayashiMasato Horiguchi
    • Daiki SatohHideyuki KobayashiMasato Horiguchi
    • C23F1/00
    • H01L21/67069H01J37/32642Y10S156/915
    • In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    • 在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中,安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域,其中 平均表面粗糙度小,使得在蚀刻处理期间产生的反应产物不被捕获以沉积,并且在平均表面粗糙度大的第一区域的外侧的第二区域,使得产生的反应产物 在蚀刻过程中被捕获以被沉积。 第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分,而在等离子体蚀刻装置中配备聚焦环,并且在基板上进行等离子体蚀刻。
    • 4. 发明申请
    • FOCUS RING, PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    • 聚焦环,等离子体蚀刻装置和等离子体蚀刻方法
    • US20090255902A1
    • 2009-10-15
    • US12491962
    • 2009-06-25
    • Daiki SatohHideyuki KobayashiMasato Horiguchi
    • Daiki SatohHideyuki KobayashiMasato Horiguchi
    • B44C1/22C23F1/08
    • H01L21/67069H01J37/32642Y10S156/915
    • In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    • 在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中,安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域,其中 平均表面粗糙度小,使得在蚀刻处理期间产生的反应产物不被捕获以沉积,并且在平均表面粗糙度大的第一区域的外侧的第二区域,使得产生的反应产物 在蚀刻过程中被捕获以被沉积。 第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分,而在等离子体蚀刻装置中配备聚焦环,并且在基板上进行等离子体蚀刻。
    • 7. 发明申请
    • Electrode assembly and plasma processing apparatus
    • 电极组件和等离子体处理装置
    • US20060288934A1
    • 2006-12-28
    • US11453140
    • 2006-06-15
    • Chikako TakahashiTakashi SuzukiMasato Horiguchi
    • Chikako TakahashiTakashi SuzukiMasato Horiguchi
    • C23C16/00C23F1/00
    • C23F4/00H01J37/32009H01J37/3244H01J37/32532H01J37/32633
    • An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented so that a worsening of the ability to carry out maintenance can be prevented. An upper electrode assembly has an upper electrode plate 32, a cooling plate (C/P) 34 and a spacer 37 interposed between the upper electrode plate 32 and the C/P 34. The upper electrode plate 32 has therein electrode plate gas-passing holes 32a that penetrate through the upper electrode plate 32. The C/P 34 has therein C/P gas-passing holes 34a that penetrate through the C/P 34. The spacer 37 has therein spacer gas-passing holes 37a that penetrate through the spacer 37. The electrode plate gas-passing holes 32a, C/P gas-passing holes 34a and the spacer gas-passing holes 37a are not disposed collinearly.
    • 能够防止电极板损坏的等离子体处理装置的电极组件,能够防止要防止的部件的数量的增加,从而可以防止进行维护的能力的恶化。 上电极组件具有上电极板32,冷却板(C / P)34和插入在上电极板32和C / P 34之间的间隔件37.上电极板32具有电极板气体通过 孔32a穿过上电极板32.C / P 34具有穿过C / P 34的C / P气体通过孔34a。间隔件37中具有间隔件气体通过孔37a, 穿过间隔件37.电极板气体通过孔32a,C / P气体通过孔34a和间隔件气体通过孔37a不共线设置。
    • 8. 发明授权
    • Information processing apparatus incorporated in a control unit storing an authentication information and transmitting a command to request an access right when a first mode is set
    • 包含在存储认证信息的控制单元中的信息处理设备,并且当设置第一模式时发送请求访问权限的命令
    • US06883043B2
    • 2005-04-19
    • US09948192
    • 2001-09-07
    • Masato Horiguchi
    • Masato Horiguchi
    • G06F12/14G06F3/06G06F13/38G06F15/16G06F21/24H04L12/40G06F13/14
    • H04L12/40123H04L12/40084
    • In a network implemented based on IEEE 1394, when an HDD is connected to a personal computer via an IEEE 1394 connection unit and a GUID terminal connection unit, the HDD obtains a GUID via the GUID terminal connection unit. When the personal computer requests acquisition of an access right, the HDD obtains a GUID via the IEEE 1394 connection unit, and compares it with the GUID obtained via the GUID terminal connection unit, and since the GUIDs match, the HDD assigns an access right to the personal computer. Even if another personal computer not connected to the HDD via the GUID terminal connection unit, transmits a GUID to the HDD via the IEEE 1394 connection unit, because the GUID differs from that of the personal computer connected to the HDD via the GUID terminal connection unit, an access right is not assigned to the personal computer not connected to the HDD via the GUID terminal connection unit.
    • 在基于IEEE1394实现的网络中,当HDD经由IEEE 1394连接单元和GUID终端连接单元连接到个人计算机时,HDD通过GUID终端连接单元获得GUID。 当个人计算机请求获取访问权时,HDD通过IEEE 1394连接单元获得GUID,并将其与通过GUID终端连接单元获得的GUID进行比较,并且由于GUID匹配,所以HDD分配访问权限 个人电脑。 即使通过GUID终端连接单元未连接到HDD的另一个个人计算机,通过IEEE 1394连接单元将GUID发送到HDD,因为GUID与通过GUID终端连接单元连接到HDD的个人计算机的GUID不同 ,则未通过GUID终端连接单元将访问权限分配给未连接到HDD的个人计算机。