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1. 发明申请

US20060102288A1 Focus ring, plasma etching apparatus and plasma etching method 有权
公开(公告)号：US20060102288A1
公开(公告)日：2006-05-18
申请号：US11270461
申请日：2005-11-10
申请人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
发明人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
IPC分类号： H01L21/306 , C23F1/00 , B44C1/22
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.

2. 发明授权

US07618515B2 Focus ring, plasma etching apparatus and plasma etching method 有权
标题翻译：聚焦环，等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US07618515B2
公开(公告)日：2009-11-17
申请号：US11270461
申请日：2005-11-10
申请人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
发明人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
摘要翻译：在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中，安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域，其中平均表面粗糙度小，使得在蚀刻处理期间产生的反应产物不被捕获以沉积，并且在平均表面粗糙度大的第一区域的外侧的第二区域，使得产生的反应产物在蚀刻过程中被捕获以被沉积。第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分，而在等离子体蚀刻装置中配备聚焦环，并且在基板上进行等离子体蚀刻。

3. 发明申请

US20090255902A1 FOCUS RING, PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 有权
标题翻译：聚焦环，等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20090255902A1
公开(公告)日：2009-10-15
申请号：US12491962
申请日：2009-06-25
申请人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
发明人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
摘要翻译：在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中，安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域，其中平均表面粗糙度小，使得在蚀刻处理期间产生的反应产物不被捕获以沉积，并且在平均表面粗糙度大的第一区域的外侧的第二区域，使得产生的反应产物在蚀刻过程中被捕获以被沉积。第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分，而在等离子体蚀刻装置中配备聚焦环，并且在基板上进行等离子体蚀刻。

4. 发明授权

US08192577B2 Focus ring, plasma etching apparatus and plasma etching method 有权
标题翻译：聚焦环，等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US08192577B2
公开(公告)日：2012-06-05
申请号：US12491962
申请日：2009-06-25
申请人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
发明人： Daiki Satoh , Hideyuki Kobayashi , Masato Horiguchi
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
摘要翻译：在用于在安装在处理容器中的基座上的基板的表面进行等离子体蚀刻的等离子体蚀刻装置中，安装有聚焦环以围绕基板并且在其表面的内侧具有第一区域，其中平均表面粗糙度小，使得在蚀刻处理期间产生的反应产物不被捕获以沉积，并且在平均表面粗糙度大的第一区域的外侧的第二区域，使得产生的反应产物在蚀刻过程中被捕获以被沉积。第一区域和第二区域之间的边界是与其他部分相比蚀刻量相对显着变化的部分，而在等离子体蚀刻装置中配备聚焦环，并且在基板上进行等离子体蚀刻。

5. 外观设计

USD559994S1 Cover ring 有权
公开(公告)号：USD559994S1
公开(公告)日：2008-01-15
申请号：US29233701
申请日：2005-07-08
申请人： Keiichi Nagakubo , Daiki Satoh
设计人： Keiichi Nagakubo , Daiki Satoh

6. 外观设计

USD559993S1 Cover ring 有权
公开(公告)号：USD559993S1
公开(公告)日：2008-01-15
申请号：US29233656
申请日：2005-07-08
申请人： Keiichi Nagakubo , Daiki Satoh
设计人： Keiichi Nagakubo , Daiki Satoh

7. 外观设计

USD560284S1 Cover ring 有权
标题翻译：盖环
公开(公告)号：USD560284S1
公开(公告)日：2008-01-22
申请号：US29233657
申请日：2005-07-08
申请人： Keiichi Nagakubo , Daiki Satoh
设计人： Keiichi Nagakubo , Daiki Satoh

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