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    • 5. 发明授权
    • Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp
    • III族氮化物半导体发光元件,III族氮化物半导体发光元件和灯的制造方法
    • US08772060B2
    • 2014-07-08
    • US13119127
    • 2009-09-14
    • Hiromitsu SakaiTakeshi Harada
    • Hiromitsu SakaiTakeshi Harada
    • H01L33/30H01L33/36H01L21/02H01L33/00
    • H01L21/0254H01L21/0237H01L21/0242H01L21/02458H01L21/02573H01L21/02609H01L21/0262H01L21/02631H01L33/007H01L2224/32245H01L2224/32257H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/48257H01L2224/49107H01L2224/73265H01L2924/181H01L2924/00014H01L2924/00H01L2924/00012
    • The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.
    • 本发明提供一种制造III族氮化物半导体发光元件的方法,可以在基板上形成各层的同时抑制翘曲,可以形成包括具有优异结晶性的发光层的半导体层,并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法,其中中间层,下层,n型接触层,n型包覆层,发光层,p型包覆层 和p型接触层依次层叠在基板的主平面上,其中直径为4英寸(100mm)以上的基板,其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; (0002)面的X射线摇摆曲线半峰全宽(FWHM)为100弧秒以下,(10-10)面的X射线摇摆曲线FWHM为300arcsec以下,处于 其中中间层已经形成在衬底上,然后在中间层上形成底层和n型接触层; 此外,在n型接触层上形成n型包覆层,发光层,p型覆层和p型接触层。
    • 10. 发明授权
    • Pointer illuminator
    • 指针灯
    • US07624699B2
    • 2009-12-01
    • US12007857
    • 2008-01-16
    • Takeshi HaradaYoshiyuki Furuya
    • Takeshi HaradaYoshiyuki Furuya
    • G01D13/22G01D11/28
    • G01D13/265Y10S116/06
    • The pointer illuminator includes: an optically transparent pointer member having a reflecting surface for a pointer, which surface reflects, light incident on a predetermined surface of incidence and guides the light to a tip of the pointer; a light source arranged around a drive shaft of the pointer member; and an optically transparent light-guiding member, which guides light from the light source to the surface of incidence and includes a first light-guiding reflecting surface provided on a face of the light-guiding member, an angle which the face forms with a center axis of the light source becoming smaller as the face leaves the light source so that the first light-guiding reflecting surface reflects the light from the light source to convert the light into approximately parallel light rays, whereby the light-guiding member guides the parallel light rays to the surface of incidence.
    • 指针照明器包括:具有用于指示器的反射表面的光学透明指示器构件,该表面反射入射在预定入射面上的光并将光引导到指示器的尖端; 围绕所述指针构件的驱动轴布置的光源; 以及将来自光源的光引导到入射面的光学透明导光部件,并且包括设置在导光部件的表面上的第一导光反射面,所述面部形成有中心的角度 光源的轴线随着离开光源而变小,使得第一导光反射表面反射来自光源的光,以将光转换成近似平行的光线,由此导光部件引导平行光 射线到入射面。