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    • 4. 发明授权
    • Method of forming contact portion of semiconductor element
    • 形成半导体元件的接触部分的方法
    • US06448183B1
    • 2002-09-10
    • US09710763
    • 2000-11-11
    • Byung-Chul Lee
    • Byung-Chul Lee
    • H01L214763
    • H01L21/76804H01L21/0271H01L21/0274H01L21/31144Y10S438/978
    • Disclosed is a method for forming a contact portion of a semiconductor element. An exemplary method includes the steps of depositing an insulation layer on a lower thin film on which there is formed a semiconductor element electrode or a metal wiring pattern, and then realizing an even upper surface of the insulation layer; forming a photosensitive film pattern thereon having a contact or via hole pattern in which inner walls of the contact holes or via holes smoothly curve downward to reach an upper surface of the insulation layer; dry-etching the insulation layer using a mask following the photosensitive film pattern to form contact holes or via holes; removing the photosensitive film pattern, then depositing a barrier metal and tungsten to fill the contact holes or the via holes; and performing a chemical mechanical polishing process to remove the barrier metal and the tungsten from the upper surface of the semiconductor element until the insulation layer is exposed and a flat surface is realized.
    • 公开了一种用于形成半导体元件的接触部分的方法。 示例性方法包括以下步骤:在形成有半导体元件电极或金属布线图案的下薄膜上沉积绝缘层,然后实现绝缘层的均匀上表面; 在其上形成具有接触孔或通孔图案的感光膜图案,其中接触孔或通孔的内壁平滑地向下弯曲以到达绝缘层的上表面; 使用与感光膜图案之后的掩模干蚀刻绝缘层以形成接触孔或通孔; 去除感光膜图案,然后沉积阻挡金属和钨以填充接触孔或通孔; 并且进行化学机械抛光工艺以从半导体元件的上表面去除阻挡金属和钨直到绝缘层露出并且实现平坦的表面。