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1. 发明授权

US07029958B2 Self aligned damascene gate 有权
标题翻译：自对准镶嵌门
公开(公告)号：US07029958B2
公开(公告)日：2006-04-18
申请号：US10699887
申请日：2003-11-04
申请人： Cyrus E. Tabery , Shibly S. Ahmed , Matthew S. Buynoski , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang , Chih-Yuh Yang , Bin Yu
发明人： Cyrus E. Tabery , Shibly S. Ahmed , Matthew S. Buynoski , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21/00
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7842
摘要： A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin in the fin area, and forming a mask in the fin area. The method further includes etching the mask to expose a channel area of the MOSFET, etching the fin to thin a width of the fin in the channel area, forming a gate over the fin, and forming contacts to the gate, the source region, and the drain region.
摘要翻译：一种形成金属氧化物半导体场效应晶体管（MOSFET）的方法包括在衬底上构图翅片区域，源极区域和漏极区域，在翅片区域中形成鳍片，并在鳍片区域中形成掩模。该方法还包括蚀刻掩模以暴露MOSFET的沟道区域，蚀刻鳍以在沟道区域中减薄翅片的宽度，在鳍上方形成栅极，以及形成与栅极，源区和漏极区域。

2. 发明授权

US06787854B1 Method for forming a fin in a finFET device 有权
标题翻译：在finFET器件中形成翅片的方法
公开(公告)号：US06787854B1
公开(公告)日：2004-09-07
申请号：US10385753
申请日：2003-03-12
申请人： Chih-Yuh Yang , Shibly S. Ahmed , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Bin Yu
发明人： Chih-Yuh Yang , Shibly S. Ahmed , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Bin Yu
IPC分类号： H01L218238
CPC分类号： H01L29/7853 , H01L29/66818
摘要： A method for forming a fin structure on a silicon-on-insulator (SOI) wafer that includes a silicon layer on an insulating layer that is formed over a semiconductor substrate includes etching the silicon layer using a first etch procedure, etching, following the first etch procedure, the silicon layer using a second etch procedure, and etching, following the second etch procedure, the silicon layer using a third etch procedure to form a T-shaped fin structure.
摘要翻译：一种在绝缘体上硅（SOI）晶片上形成翅片结构的方法，包括在半导体衬底上形成的绝缘层上的硅层，包括使用第一蚀刻步骤蚀刻硅层，然后蚀刻第一蚀刻步骤，使用第二蚀刻步骤的硅层，以及在第二蚀刻程序之后，使用第三蚀刻工艺蚀刻硅层以形成T形翅片结构。

3. 发明授权

US06645797B1 Method for forming fins in a FinFET device using sacrificial carbon layer 有权
标题翻译：在使用牺牲碳层的FinFET器件中形成翅片的方法
公开(公告)号：US06645797B1
公开(公告)日：2003-11-11
申请号：US10310926
申请日：2002-12-06
申请人： Matthew S. Buynoski , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Chih-Yuh Yang , Bin Yu
发明人： Matthew S. Buynoski , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L2184
CPC分类号： H01L29/785 , H01L29/66795
摘要： A method for forming a fin in a semiconductor device that includes a substrate, an insulating layer formed on the substrate, and a conductive layer formed on the insulating layer, includes forming a carbon layer over the conductive layer and forming a mask over the carbon layer. The method further includes etching the mask and carbon layer to form at least one structure, where the structure has a first width, reducing the width of the carbon layer in the at least one structure to a second width, depositing an oxide layer to surround the at least one structure, removing a portion of the oxide layer and the mask, removing the carbon layer to form an opening in a remaining portion of the oxide layer for each of the at least one structure, filling the at least one opening with conductive material, and removing the remaining portion of the oxide layer and a portion of the conductive layer to form the fin.
摘要翻译：一种在半导体器件中形成翅片的方法，包括：衬底，形成在衬底上的绝缘层和形成在绝缘层上的导电层，包括在导电层上形成碳层，并在碳层上形成掩模。该方法还包括蚀刻掩模和碳层以形成至少一种结构，其中结构具有第一宽度，将至少一个结构中的碳层的宽度减小到第二宽度，沉积氧化物层以围绕至少一个结构，去除所述氧化物层和所述掩模的一部分，除去所述碳层以在所述至少一个结构中的每一个结构的氧化物层的剩余部分中形成开口，用导电材料填充所述至少一个开口并且去除氧化物层的剩余部分和导电层的一部分以形成翅片。

4. 发明申请

US20050104091A1 Self aligned damascene gate 有权
标题翻译：自对准镶嵌门
公开(公告)号：US20050104091A1
公开(公告)日：2005-05-19
申请号：US10699887
申请日：2003-11-04
申请人： Cyrus Tabery , Shibly Ahmed , Matthew Buynoski , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang , Chih-Yuh Yang , Bin Yu
发明人： Cyrus Tabery , Shibly Ahmed , Matthew Buynoski , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21/336 , H01L29/786 , H01L29/745
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7842
摘要： A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin in the fin area, and forming a mask in the fin area. The method further includes etching the mask to expose a channel area of the MOSFET, etching the fin to thin a width of the fin in the channel area, forming a gate over the fin, and forming contacts to the gate, the source region, and the drain region.
摘要翻译：一种形成金属氧化物半导体场效应晶体管（MOSFET）的方法包括在衬底上构图翅片区域，源极区域和漏极区域，在翅片区域中形成鳍片，并在鳍片区域中形成掩模。该方法还包括蚀刻掩模以暴露MOSFET的沟道区域，蚀刻鳍以在沟道区域中减薄翅片的宽度，在鳍上方形成栅极，以及形成与栅极，源区和漏极区域。

5. 发明授权

US06787476B1 Etch stop layer for etching FinFET gate over a large topography 有权
标题翻译：蚀刻停止层，用于在大地形上蚀刻FinFET栅极
公开(公告)号：US06787476B1
公开(公告)日：2004-09-07
申请号：US10632989
申请日：2003-08-04
申请人： Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Chih-Yuh Yang , Bin Yu
发明人： Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21302
CPC分类号： H01L29/785 , H01L21/31116 , H01L21/31144 , H01L29/4908 , H01L29/66795
摘要： A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.
摘要翻译：提供了一种形成Fin场效应晶体管（FinFET）的栅极的方法。该方法包括在翅片上形成第一层材料，并在第一层上形成第二层。第二层包括Ti或TiN。该方法还包括在第二层上形成第三层。第三层包括抗反射涂层。该方法还包括蚀刻第一，第二和第三层以形成用于FinFET的栅极。

6. 发明授权

US07915160B1 Methods for forming small contacts 有权
标题翻译：形成小触点的方法
公开(公告)号：US07915160B1
公开(公告)日：2011-03-29
申请号：US11625190
申请日：2007-01-19
申请人： Cyrus E. Tabery , Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
发明人： Cyrus E. Tabery , Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L29/66795 , H01L29/785 , H01L29/7856
摘要： Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.
摘要翻译：提供了用于形成用于半导体器件的触点的方法。所述方法可以包括在半导体器件上沉积诸如多晶硅，氮化物，氧化物和/或碳材料的各种材料。所述方法还可以包括形成接触孔并填充接触孔以形成用于半导体器件的接触。

7. 发明授权

US07183223B1 Methods for forming small contacts 有权
标题翻译：形成小触点的方法
公开(公告)号：US07183223B1
公开(公告)日：2007-02-27
申请号：US10728909
申请日：2003-12-08
申请人： Cyrus E. Tabery , Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
发明人： Cyrus E. Tabery , Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L29/66795 , H01L29/785 , H01L29/7856
摘要： Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.
摘要翻译：提供了用于形成用于半导体器件的触点的方法。所述方法可以包括在半导体器件上沉积诸如多晶硅，氮化物，氧化物和/或碳材料的各种材料。所述方法还可以包括形成接触孔并填充接触孔以形成用于半导体器件的接触。

8. 发明授权

US06960804B1 Semiconductor device having a gate structure surrounding a fin 有权
标题翻译：具有围绕鳍片的栅极结构的半导体器件
公开(公告)号：US06960804B1
公开(公告)日：2005-11-01
申请号：US10633034
申请日：2003-10-10
申请人： Chih-Yuh Yang , Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Bin Yu
发明人： Chih-Yuh Yang , Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Bin Yu
IPC分类号： H01L21/027 , H01L21/336 , H01L29/786 , H01L29/788
CPC分类号： H01L29/785 , H01L21/0276 , H01L29/42392 , H01L29/66795
摘要： A double-semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The gate is formed on the insulating layer and surrounds the top surface, bottom surface and the side surfaces of the fin in the channel region of the semiconductor device. Surrounding the fin with gate material results in an increased total channel width and more flexible device adjustment margins.
摘要翻译：双半导体器件包括衬底，绝缘层，鳍和栅极。绝缘层形成在基板上，并且鳍形成在绝缘层上。翅片具有多个侧表面，顶表面和底表面。栅极形成在绝缘层上并且围绕半导体器件的沟道区域中的鳍的顶表面，底表面和侧表面。用门材料围绕翅片会导致总通道宽度增加和设备调整裕度更灵活。

9. 发明授权

US07029959B1 Source and drain protection and stringer-free gate formation in semiconductor devices 有权
标题翻译：半导体器件中的源极和漏极保护和无栅极栅极形成
公开(公告)号：US07029959B1
公开(公告)日：2006-04-18
申请号：US10429737
申请日：2003-05-06
申请人： Chih-Yuh Yang , Shibly S. Ahmed , Srikanteswara Dakshina-Murhty , Cyrus E. Tabery , Bin Yu
发明人： Chih-Yuh Yang , Shibly S. Ahmed , Srikanteswara Dakshina-Murhty , Cyrus E. Tabery , Bin Yu
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/785 , H01L29/66545 , H01L29/66795
摘要： A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and depositing a gate material over the fin structure. The method may also include depositing an organic anti-reflective coating on the gate material and forming a gate mask on the organic anti-reflective coating. The organic anti-reflective coating around the gate mask may be removed, and the gate material around the gate mask may be removed to define a gate.
摘要翻译：制造半导体器件的方法可以包括在绝缘体上形成翅片结构，并在栅极结构上沉积栅极材料。该方法还可以包括在栅极材料上沉积有机抗反射涂层并在有机抗反射涂层上形成栅极掩模。可以去除栅极掩模周围的有机抗反射涂层，并且可以去除栅极掩模周围的栅极材料以限定栅极。

10. 发明授权

US07183152B1 Epitaxially grown fin for FinFET 有权
标题翻译： FinFET的外延生长鳍
公开(公告)号：US07183152B1
公开(公告)日：2007-02-27
申请号：US10975475
申请日：2004-10-29
申请人： Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
发明人： Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/00 , H01L21/84 , H01L21/3205
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/1054 , H01L29/66795 , H01L29/78687
摘要： A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.
摘要翻译：形成鳍状场效应晶体管（FinFET）的鳍片的方法包括在第一材料层中限定沟槽，其中沟槽的开口的宽度基本上小于该层的厚度。该方法包括在沟槽中生长第二材料以形成翅片并去除第一材料层。

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