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1. 发明授权

US09920451B2 High throughput multi-wafer epitaxial reactor 有权
公开(公告)号：US09920451B2
公开(公告)日：2018-03-20
申请号：US14216434
申请日：2014-03-17
申请人： Crystal Solar, Incorporated , Bozena Kaszuba
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C30B25/12 , C30B25/08 , C30B25/10 , C30B35/00
CPC分类号： C30B25/12 , C30B25/08 , C30B25/105 , C30B35/005
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

2. 发明授权

US09255346B2 Silicon wafers by epitaxial deposition 有权
标题翻译：硅晶片通过外延沉积
公开(公告)号：US09255346B2
公开(公告)日：2016-02-09
申请号：US13483002
申请日：2012-05-29
申请人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Bozena Kaszuba , Quoc Vinh Truong , Jean R. Vatus
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
IPC分类号： C30B21/02 , C30B29/06 , C30B25/16 , H01L21/02
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.
摘要翻译：通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。高体积可以由包括多个微型间歇反应器的沉积系统来解决。

3. 发明授权

US09556522B2 High throughput multi-wafer epitaxial reactor 有权
标题翻译：高通量多晶圆外延反应堆
公开(公告)号：US09556522B2
公开(公告)日：2017-01-31
申请号：US14196609
申请日：2014-03-04
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C23C16/00 , C23C16/48 , C23C16/458 , C23C16/46 , C23C16/54 , C30B25/10 , C30B25/12 , C30B29/06 , C23C16/02 , C23C16/455
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

4. 发明申请

US20140311403A1 HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR 审中-公开
标题翻译：高通量多波长外延反应器
公开(公告)号：US20140311403A1
公开(公告)日：2014-10-23
申请号：US14216434
申请日：2014-03-17
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C30B25/12
CPC分类号： C30B25/12 , C30B25/08 , C30B25/105 , C30B35/005
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化室壁上的沉积。对灯模组中的各个灯的照明进行排序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

5. 发明授权

US08663753B2 High throughput multi-wafer epitaxial reactor 有权
标题翻译：高通量多晶圆外延反应堆
公开(公告)号：US08663753B2
公开(公告)日：2014-03-04
申请号：US13664332
申请日：2012-10-30
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh
IPC分类号： C23C8/00 , C23C16/00
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

6. 发明申请

US20190003076A1 SILICON WAFERS BY EPITAXIAL DEPOSITION 审中-公开
公开(公告)号：US20190003076A1
公开(公告)日：2019-01-03
申请号：US15991785
申请日：2018-05-29
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
IPC分类号： C30B25/14 , C30B25/12 , C30B25/16 , C30B25/20 , C30B29/06 , C30B25/10 , H01L21/02 , H01L31/18
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

7. 发明授权

US09982363B2 Silicon wafers by epitaxial deposition 有权
公开(公告)号：US09982363B2
公开(公告)日：2018-05-29
申请号：US15014404
申请日：2016-02-03
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
IPC分类号： C30B29/06 , C30B25/14 , C30B25/16 , C30B25/10 , C30B25/12 , C30B25/20 , H01L21/02 , H01L31/18
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

8. 发明申请

US20140318442A1 HIGH THROUGHPUT EPITAXIAL DEPOSITION SYSTEM FOR SINGLE CRYSTAL SOLAR DEVICES 审中-公开
标题翻译：用于单晶太阳能器件的高通量外延沉积系统
公开(公告)号：US20140318442A1
公开(公告)日：2014-10-30
申请号：US14217097
申请日：2014-03-17
申请人： Crystal Solar Incorporated
发明人： Visweswaren Sivaramakrishnan , Jean Vatus , Andrzej Kaszuba , Vicente Lim , Ashish Asthana
IPC分类号： C30B25/14 , C30B25/10
CPC分类号： C30B25/105 , C23C16/4587 , C23C16/46 , C30B25/08 , C30B25/12 , C30B35/005
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration and the wafers may be mounted at a small angle to the plane of the wafer carrier plates, wherein the wafers are configured in pairs along the direction of gas flow and wherein along the direction of gas flow the angular mounting of the wafers provides a smaller gap between opposed wafer surfaces on said parallel wafer carrier plates in the center of said wafer sleeve than at the periphery of said wafer sleeve.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，晶片套筒中包含许多晶片，其包括间隔开的多个晶片承载板。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。为了提高均匀性，处理气体流动的方向可以在交叉流形式中变化，并且晶片可以以与晶片载体板的平面成小角度安装，其中晶片沿着气体的方向成对配置并且其中沿着气流的方向，晶片的角度安装在所述晶片套筒的中心处的所述平行晶片载体板上的相对晶片表面之间提供比在所述晶片套筒的周边处更小的间隙。

9. 发明申请

US20130059430A1 High Throughput Multi-Wafer Epitaxial Reactor 有权
标题翻译：高通量多晶硅外延电抗器
公开(公告)号：US20130059430A1
公开(公告)日：2013-03-07
申请号：US13664332
申请日：2012-10-30
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： H01L21/205
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

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