专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170141720A9 PHOTOVOLTAIC MODULE FABRICATION WITH THIN SINGLE CRYSTAL EPITAXIAL SILICON DEVICES 审中-公开
公开(公告)号：US20170141720A9
公开(公告)日：2017-05-18
申请号：US14878628
申请日：2015-10-08
申请人： Crystal Solar, Incorporated
发明人： Kramadhati V. Ravi , Tirunelveli S. Ravi , Ashish Asthana , Somnath Nag
IPC分类号： H02S30/20 , H01L31/048 , H01L31/049 , H01L31/18 , H01L31/028 , H01L31/068 , H01L31/0236 , H01L31/0216 , H01L31/02 , H01L31/05
CPC分类号： H02S30/20 , G06F1/1632 , G06F1/1698 , G06F13/105 , H01L31/0201 , H01L31/02168 , H01L31/02366 , H01L31/0284 , H01L31/0488 , H01L31/049 , H01L31/0504 , H01L31/068 , H01L31/1804 , H01L31/1876 , H04B5/0031 , H04B5/0056
摘要： Photovoltaic modules including a plurality of solar cells bonded to a module back sheet are described herein, wherein each solar cell includes a superstrate bonded to a front side of a photovoltaic device to facilitate handling of very thin photovoltaic devices during fabrication of the module. Modules may also include module front sheets and the solar cells may include bottom sheets. The modules may be made of flexible materials, and may be foldable. Fabrication processes include tabbing photovoltaic devices prior to attaching the individual superstrates.

2. 发明申请

US20160233824A1 PHOTOVOLTAIC MODULE FABRICATION WITH THIN SINGLE CRYSTAL EPITAXIAL SILICON DEVICES 审中-公开
公开(公告)号：US20160233824A1
公开(公告)日：2016-08-11
申请号：US14878628
申请日：2015-10-08
申请人： Crystal Solar, Incorporated
发明人： Kramadhati V. Ravi , Tirunelveli S. Ravi , Ashish Asthana , Somnath Nag
IPC分类号： H02S30/20 , H01L31/048 , H01L31/049 , H01L31/18 , H01L31/028 , H01L31/068 , H01L31/0236 , H01L31/0216 , H01L31/02 , H01L31/05
CPC分类号： H02S30/20 , G06F1/1632 , G06F1/1698 , G06F13/105 , H01L31/0201 , H01L31/02168 , H01L31/02366 , H01L31/0284 , H01L31/0488 , H01L31/049 , H01L31/0504 , H01L31/068 , H01L31/1804 , H01L31/1876 , H04B5/0031 , H04B5/0056
摘要： Photovoltaic modules including a plurality of solar cells bonded to a module back sheet are described herein, wherein each solar cell includes a superstrate bonded to a front side of a photovoltaic device to facilitate handling of very thin photovoltaic devices during fabrication of the module. Modules may also include module front sheets and the solar cells may include bottom sheets. The modules may be made of flexible materials, and may be foldable. Fabrication processes include tabbing photovoltaic devices prior to attaching the individual superstrates.

3. 发明申请

US20150059847A1 Passivated Emitter Rear Locally Patterned Epitaxial Solar Cell 审中-公开
标题翻译：钝化发射体后局部图案外延太阳能电池
公开(公告)号：US20150059847A1
公开(公告)日：2015-03-05
申请号：US14461250
申请日：2014-08-15
申请人： Crystal Solar, Incorporated
发明人： Kramadhati V. Ravi , Tirunelveli S. Ravi
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0368 , H01L31/028 , H01L31/0216
CPC分类号： H01L31/022433 , H01L31/02167 , H01L31/022425 , H01L31/056 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Passivated emitter rear local epitaxy (PERL-e) thin Si solar cells may be formed with a heavily doped epitaxial back surface field (BSF) layer, which is patterned to form well spaced point contacts to the silicon base on the rear of the solar cell. The back side of the cell may be finished with a dielectric passivation layer and a metallization layer for making electrical contact to the cell. PERL-e thick Si solar cells may be formed with heavily doped epitaxial films as the back point contacts, where the point contacts are defined by the provision of a selectively patterned thermal oxide on the rear wafer surface. Furthermore, absorption of longer wavelength, infrared (IR), light in thin silicon solar cells may be improved by the addition of a dielectric stack on the rear surface of the solar cell (a back reflector), the stack acting to reflect the longer wavelength light back through the active layers of the solar cell.
摘要翻译：钝化的发射体后局部外延（PERL-e）薄Si太阳能电池可以用重掺杂的外延后表面场（BSF）层形成，其被图案化以形成与太阳能电池背面上的硅基极好的间隔开的点接触。电池的背面可以用电介质钝化层和用于与电池电接触的金属化层来完成。 PERL-e厚Si太阳能电池可以用重掺杂的外延膜形成作为背点接触，其中通过在后晶片表面上提供选择性图案化的氧化物来限定点接触。此外，通过在太阳能电池（背面反射器）的后表面上添加电介质堆叠可以改善薄硅太阳能电池中长波长，红外（IR）光的吸收，该反应堆反射更长的波长通过太阳能电池的有源层回光。

4. 发明申请

US20140311403A1 HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR 审中-公开
标题翻译：高通量多波长外延反应器
公开(公告)号：US20140311403A1
公开(公告)日：2014-10-23
申请号：US14216434
申请日：2014-03-17
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C30B25/12
CPC分类号： C30B25/12 , C30B25/08 , C30B25/105 , C30B35/005
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化室壁上的沉积。对灯模组中的各个灯的照明进行排序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

5. 发明授权

US08663753B2 High throughput multi-wafer epitaxial reactor 有权
标题翻译：高通量多晶圆外延反应堆
公开(公告)号：US08663753B2
公开(公告)日：2014-03-04
申请号：US13664332
申请日：2012-10-30
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh
IPC分类号： C23C8/00 , C23C16/00
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

6. 发明授权

US09556522B2 High throughput multi-wafer epitaxial reactor 有权
标题翻译：高通量多晶圆外延反应堆
公开(公告)号：US09556522B2
公开(公告)日：2017-01-31
申请号：US14196609
申请日：2014-03-04
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C23C16/00 , C23C16/48 , C23C16/458 , C23C16/46 , C23C16/54 , C30B25/10 , C30B25/12 , C30B29/06 , C23C16/02 , C23C16/455
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

7. 发明申请

US20150040979A1 Silicon Wafers with p-n Junctions by Epitaxial Deposition and Devices Fabricated Therefrom 审中-公开
标题翻译：具有p-n结的硅晶片通过外延沉积及其制造的器件
公开(公告)号：US20150040979A1
公开(公告)日：2015-02-12
申请号：US14458227
申请日：2014-08-12
申请人： Crystal Solar Incorporated
发明人： Tirunelveli S. Ravi , Ruiying Hao
IPC分类号： H01L31/18 , H01L31/0224 , C30B29/68 , C30B25/02 , C30B29/06 , H01L31/068 , H01L31/0236
CPC分类号： H01L31/1804 , C30B25/02 , C30B29/06 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/068 , H01L31/0682 , H01L31/0684 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： High efficiency silicon solar cells, including IBC cells, may be formed from lightly doped p-n sandwich structures fabricated in-situ by epitaxial growth. For example, the solar cell may comprise: an n-type silicon layer greater than or equal to 20 microns thick, with a dopant concentration between 1E15/cm3 and 5E16/cm3 and a bulk silicon carrier lifetime greater than 50 microseconds; a p-type silicon layer greater than 10 microns thick, with a dopant concentration between 1E16/cm3 and 5E18/cm3, and a bulk silicon carrier lifetime greater than 10 microseconds; wherein the n-type and p-type silicon layers were fabricated by epitaxial deposition, one after the other, on a reusable single crystal silicon substrate. The ideality factor of the silicon solar cell may be approximately 1.0. The epitaxial deposition may be in a reactor with low auto-doping and low oxygen incorporation.
摘要翻译：包括IBC电池的高效硅太阳能电池可以由通过外延生长原位制造的轻掺杂p-n夹心结构形成。例如，太阳能电池可以包括：大于或等于20微米厚的n型硅层，掺杂剂浓度在1E15 / cm3至5E16 / cm3之间，体硅载流子寿命大于50微秒; 大于10微米厚的p型硅层，掺杂剂浓度在1E16 / cm3和5E18 / cm3之间，体硅载流子寿命大于10微秒; 其中通过在可重复使用的单晶硅衬底上一个接一个地外延沉积制造n型和p型硅层。硅太阳能电池的理想因子可以是大约1.0。外延沉积可以在具有低自掺杂和低氧掺入的反应器中。

8. 发明申请

US20190003076A1 SILICON WAFERS BY EPITAXIAL DEPOSITION 审中-公开
公开(公告)号：US20190003076A1
公开(公告)日：2019-01-03
申请号：US15991785
申请日：2018-05-29
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
IPC分类号： C30B25/14 , C30B25/12 , C30B25/16 , C30B25/20 , C30B29/06 , C30B25/10 , H01L21/02 , H01L31/18
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

9. 发明授权

US09982363B2 Silicon wafers by epitaxial deposition 有权
公开(公告)号：US09982363B2
公开(公告)日：2018-05-29
申请号：US15014404
申请日：2016-02-03
申请人： Crystal Solar, Incorporated
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
IPC分类号： C30B29/06 , C30B25/14 , C30B25/16 , C30B25/10 , C30B25/12 , C30B25/20 , H01L21/02 , H01L31/18
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

10. 发明授权

US09920451B2 High throughput multi-wafer epitaxial reactor 有权
公开(公告)号：US09920451B2
公开(公告)日：2018-03-20
申请号：US14216434
申请日：2014-03-17
申请人： Crystal Solar, Incorporated , Bozena Kaszuba
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C30B25/12 , C30B25/08 , C30B25/10 , C30B35/00
CPC分类号： C30B25/12 , C30B25/08 , C30B25/105 , C30B35/005
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式