专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06784399B2 Micromachining with high-energy, intra-cavity Q-switched CO2 laser pulses 有权
标题翻译：用高能量，腔内Q开关CO2激光脉冲进行微加工
公开(公告)号：US06784399B2
公开(公告)日：2004-08-31
申请号：US10143040
申请日：2002-05-09
申请人： Corey M. Dunsky , Hisashi Matsumoto , Richard S. Harris , John T. Kennedy , Vernon A. Seguin , Leon Newman
发明人： Corey M. Dunsky , Hisashi Matsumoto , Richard S. Harris , John T. Kennedy , Vernon A. Seguin , Leon Newman
IPC分类号： B23K2638
CPC分类号： B28D1/221 , B23K26/0624 , B23K26/382 , B23K26/389 , B23K26/40 , B23K2101/40 , B23K2101/42 , B23K2103/08 , B23K2103/12 , B23K2103/16 , B23K2103/172 , B23K2103/42 , B23K2103/50 , B23K2103/52 , H01S3/0816 , H01S3/1024 , H01S3/115 , H01S3/2232 , H05K3/0026 , H05K3/0032 , H05K3/0038
摘要： An EOM Q-switched CO2 laser produces bursts of laser pulses delivered at a high PRF such as 20-140 kHz and having a short high-power spike of about 80-150 ns followed by a lower-power tail of about 0.05-12.0 &mgr;s. The bursts and/or laser pulses can be shaped by controlling the RF pumping duty cycle, the delay between the onset of RF pumping and the initiation of Q-switching, the pulse repetition frequency, and/or the duration of the tail. The bursts of laser pulses can be adapted to facilitate machining of metal layers and/or layers containing materials having disparate vaporization temperatures and/or disparate melting points, such as FR4 or green ceramics.
摘要翻译： EOM Q开关CO2激光器产生以高PRF（例如20-140kHz）传送的激光脉冲，并具有大约80-150ns的短大功率尖峰，之后是大约0.05-12.0μ的低功率尾部。脉冲串和/或激光脉冲可以通过控制RF泵送占空比，RF泵送开始与Q开关的开始之间的延迟，脉冲重复频率和/或尾部的持续时间来成形。激光脉冲的脉冲可以适于促进包含具有不同蒸发温度和/或不同熔点的材料的金属层和/或层的加工，例如FR4或绿色陶瓷。

2. 再颁专利

USRE43487E1 Laser segmented cutting 有权
标题翻译：激光分段切割
公开(公告)号：USRE43487E1
公开(公告)日：2012-06-26
申请号：US12350767
申请日：2009-01-08
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要翻译：通过将长切割路径（112）分割成约10微米至1mm的短段（122）来提高通过硅等材料的UV激光切割吞吐量。激光输出（32）在第一短段（122）内扫描预定数量的通过，然后移动到第二短段（122）内并在第二短段（122）内扫描预定次数的通过次数。可以操纵咬合尺寸，段尺寸（126）和段重叠（136）以最小化沟槽回填的数量和类型。采用实时监测来减少已经完成切割的切割路径112（112）的重新扫描部分。激光输出（32）的极化方向也与切割方向相关，以进一步提高吞吐量。该技术可用于切割具有各种不同激光和波长的各种材料。多步骤过程可以优化每个单独层的激光工艺。

3. 发明申请

US20100140235A1 LASER SYSTEM FOR PROCESSING A MEMORY LINK WITH A SET OF AT LEAST TWO LASER PULSES 有权
标题翻译：用于处理具有一组至少两个激光脉冲的存储器链接的激光系统
公开(公告)号：US20100140235A1
公开(公告)日：2010-06-10
申请号：US12705433
申请日：2010-02-12
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/00
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。可以使用传统的IR波长或它们的谐波。

4. 发明申请

US20070275541A1 Back side wafer dicing 有权
标题翻译：背面晶圆切片
公开(公告)号：US20070275541A1
公开(公告)日：2007-11-29
申请号：US11441453
申请日：2006-05-25
申请人： Richard S. Harris , Ho W. Lo
发明人： Richard S. Harris , Ho W. Lo
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/04 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/67092
摘要： Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
摘要翻译：用于划片半导体晶片的系统和方法，其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。半导体晶片从其后侧划线。在一个实施例中，在背面研磨过程之后但在去除背面研磨带之前，对晶片的背面进行划线。因此，防止从划线工艺产生的碎屑沉积在晶片的顶表面上。为了确定相对于晶片背面的切割车道或街道的位置，用构造成穿过研磨带和晶片的光来照射晶片的顶侧。从晶片的背面检测光，并且相对于背面映射街道。然后用锯或激光切割晶片的背面。

5. 发明授权

US06806440B2 Quasi-CW diode pumped, solid-state UV laser system and method employing same 失效
标题翻译：准CW二极管泵浦，固态紫外激光系统及其使用方法
公开(公告)号：US06806440B2
公开(公告)日：2004-10-19
申请号：US10096629
申请日：2002-03-12
申请人： Yunlong Sun , Richard S. Harris
发明人： Yunlong Sun , Richard S. Harris
IPC分类号： B23K2638
CPC分类号： H01S3/1022 , B23K26/382 , B23K26/40 , B23K2101/42 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/16 , B23K2103/172 , B23K2103/26 , B23K2103/42 , B23K2103/50 , B23K2103/52 , H01S3/094076 , H01S3/0941 , H01S3/10038 , H01S3/10046 , H01S3/1024 , H01S3/109 , H01S3/117 , H05K3/0026 , H05K3/0038
摘要： A quasi-CW diode- or lamp-pumped, A-O Q-switched solid-state UV laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the average pumping power to the laser medium (16), and thermal loading of the laser pumping diodes (14), remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.
摘要翻译：准CW二极管或灯泵浦的AO Q开关固态紫外激光系统（10）使准CW泵浦的定时与定位系统（36）的运动同步，以减少定位系统（36）的泵送）从一个目标区域（31）移动到下一个目标区域（31），以在高通量下在衬底中形成多个通孔。因此，即使通过激光介质（16）的平均泵浦功率和激光泵浦二极管（14）的热负载仍然保持与通过传统CW泵浦现有可用的通常形式的可用UV功率相同可用的激光泵浦二极管（14）。可以进一步修改准CW泵浦电流分布，以实现优选的UV脉冲幅度分布。

6. 发明申请

US20090155935A1 BACK SIDE WAFER DICING 审中-公开
标题翻译：后面倒角
公开(公告)号：US20090155935A1
公开(公告)日：2009-06-18
申请号：US12389686
申请日：2009-02-20
申请人： Richard S. Harris , Ho W. Lo
发明人： Richard S. Harris , Ho W. Lo
IPC分类号： H01L21/02
CPC分类号： H01L21/78 , B23K26/04 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/67092
摘要： Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
摘要翻译：用于划片半导体晶片的系统和方法，其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。半导体晶片从其后侧划线。在一个实施例中，在背面研磨过程之后但在去除背面研磨带之前，对晶片的背面进行划线。因此，防止从划线工艺产生的碎屑沉积在晶片的顶表面上。为了确定相对于晶片背面的切割车道或街道的位置，用构造成穿过研磨带和晶片的光来照射晶片的顶侧。从晶片的背面检测光，并且相对于背面映射街道。然后用锯或激光切割晶片的背面。

7. 发明授权

US07482551B2 Processing a memory link with a set of at least two laser pulses 有权
标题翻译：用一组至少两个激光脉冲处理存储器链接
公开(公告)号：US07482551B2
公开(公告)日：2009-01-27
申请号：US11286132
申请日：2005-11-23
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/02 , B23K26/08 , H01L21/77
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。可以使用传统的IR波长或它们的谐波。

8. 发明授权

US06781090B2 Quasi-CW diode-pumped, solid-state harmonic laser system and method employing same 有权
标题翻译：准CW二极管泵浦，固态谐波激光系统及其应用方法
公开(公告)号：US06781090B2
公开(公告)日：2004-08-24
申请号：US10242299
申请日：2002-09-11
申请人： Yunlong Sun , Richard S. Harris
发明人： Yunlong Sun , Richard S. Harris
IPC分类号： B23K2638
CPC分类号： B23K26/0622 , B23K26/382 , B23K26/40 , B23K2101/35 , B23K2101/42 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/16 , B23K2103/172 , B23K2103/26 , B23K2103/42 , B23K2103/50 , B23K2103/52 , H05K3/0026
摘要： A quasi-CW diode-pumped, A-O Q-switched solid-state harmonic laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the loading to the laser pumping diodes (14) remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW-pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.
摘要翻译：准CW二极管泵浦AOQ开关固态谐波激光系统（10）使准CW泵浦的定时与定位系统（36）的运动同步，以在定位系统（36）移动时减少泵送从一个目标区域（31）到下一个目标区域（31），以高通量在基板中形成多个通孔。因此，即使对于激光泵浦二极管（14）的负载保持与通过常规CW泵浦可用的常规可用激光二极管（14）可用的负载相同，用于通孔形成的可用UV功率也较高。可以进一步修改准CW泵浦电流分布，以实现优选的UV脉冲幅度分布。

9. 发明授权

US06574250B2 Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths 有权
公开(公告)号：US06574250B2
公开(公告)日：2003-06-03
申请号：US09757418
申请日：2001-01-09
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： H01S310
CPC分类号： H01L23/5258 , B23K26/04 , B23K26/0622 , B23K26/0624 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： A burst (50) of ultrashort laser pulses (52) is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst (50) is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse (52) within the burst (50) is generally shorter than 25 ps, preferably shorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst (50) of laser pulses (52) at each link (22). Conventional wavelengths or their harmonics can be employed.

10. 发明授权

US4930901A Method of and apparatus for modulating a laser beam 失效
标题翻译：用于调制激光束的方法和装置
公开(公告)号：US4930901A
公开(公告)日：1990-06-05
申请号：US357979
申请日：1989-05-26
申请人： Joel C. Johnson , Richard S. Harris
发明人： Joel C. Johnson , Richard S. Harris
IPC分类号： G02B26/02 , B23K26/06 , H01L21/48 , H01L21/60 , H01S3/11 , H03L7/26
CPC分类号： H01S3/117 , B23K26/06 , B23K26/064 , B23K26/0643 , H01L21/4825 , H01S3/10038
摘要： A laser system operable in both a lead bonding mode and a lead severing mode. When in the lead bonding mode, the light-amplifying medium (38) of the laser is optically pumped by a lamp (45) to produce laser pulses within the laser cavity (36). The power supply (56) is rapidly switched to provide the bonding pulses (L.sub.b) at a high repetition rate. A Q-switch (46) is disposed within the cavity (36) to shape the laser output pulses (L.sub.b) with a leading power spike (S.sub.b) that is suitable for reducing the reflectivity of the lead (20) surface, thereby facilitating maximum absorption of the laser energy for the bonding operation. When in the severing mode, the light-amplifying medium (38) is continuously pumped and the Q-switch (46) is repetitively switched at a rate high enough to generate laser pulses (L.sub.s) suitable for severing the leads (20) without heating adjacent portions of the leads (20).
摘要翻译：一种可在引线键合模式和引线切断模式下操作的激光系统。当处于引线键合模式时，激光的光放大介质（38）被灯（45）光泵浦，以在激光腔（36）内产生激光脉冲。快速切换电源（56）以提供高重复率的接合脉冲（Lb）。 Q型开关（46）设置在空腔（36）内，用适于降低引线（20）表面的反射率的引导功率尖峰（Sb）来形成激光输出脉冲（Lb），从而有助于最大化吸收激光能量进行接合操作。当处于切断模式时，光放大介质（38）被连续泵送，并且Q开关（46）以足够高的速率重复切换，以产生适合于切断引线（20）而不加热的激光脉冲（Ls）引线（20）的相邻部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式