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1. 发明申请

US20090155935A1 BACK SIDE WAFER DICING 审中-公开
标题翻译：后面倒角
公开(公告)号：US20090155935A1
公开(公告)日：2009-06-18
申请号：US12389686
申请日：2009-02-20
申请人： Richard S. Harris , Ho W. Lo
发明人： Richard S. Harris , Ho W. Lo
IPC分类号： H01L21/02
CPC分类号： H01L21/78 , B23K26/04 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/67092
摘要： Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
摘要翻译：用于划片半导体晶片的系统和方法，其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。半导体晶片从其后侧划线。在一个实施例中，在背面研磨过程之后但在去除背面研磨带之前，对晶片的背面进行划线。因此，防止从划线工艺产生的碎屑沉积在晶片的顶表面上。为了确定相对于晶片背面的切割车道或街道的位置，用构造成穿过研磨带和晶片的光来照射晶片的顶侧。从晶片的背面检测光，并且相对于背面映射街道。然后用锯或激光切割晶片的背面。

2. 发明申请

US20070275541A1 Back side wafer dicing 有权
标题翻译：背面晶圆切片
公开(公告)号：US20070275541A1
公开(公告)日：2007-11-29
申请号：US11441453
申请日：2006-05-25
申请人： Richard S. Harris , Ho W. Lo
发明人： Richard S. Harris , Ho W. Lo
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/04 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/67092
摘要： Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
摘要翻译：用于划片半导体晶片的系统和方法，其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。半导体晶片从其后侧划线。在一个实施例中，在背面研磨过程之后但在去除背面研磨带之前，对晶片的背面进行划线。因此，防止从划线工艺产生的碎屑沉积在晶片的顶表面上。为了确定相对于晶片背面的切割车道或街道的位置，用构造成穿过研磨带和晶片的光来照射晶片的顶侧。从晶片的背面检测光，并且相对于背面映射街道。然后用锯或激光切割晶片的背面。

3. 发明授权

US06433301B1 Beam shaping and projection imaging with solid state UV Gaussian beam to form vias 有权
标题翻译：光束成像和投影成像与固态紫外高斯光束形成通孔
公开(公告)号：US06433301B1
公开(公告)日：2002-08-13
申请号：US09580396
申请日：2000-05-26
申请人： Corey M. Dunsky , Xinbing Liu , Nicholas J. Croglio , Ho W. Lo , Bryan C. Gundrum , Hisashi Matsumoto
发明人： Corey M. Dunsky , Xinbing Liu , Nicholas J. Croglio , Ho W. Lo , Bryan C. Gundrum , Hisashi Matsumoto
IPC分类号： B23K2638
CPC分类号： B23K26/382 , B23K26/066 , B23K26/073 , B23K26/0732 , B23K26/389 , B23K26/40 , B23K2101/42 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/16 , B23K2103/172 , B23K2103/26 , B23K2103/42 , B23K2103/50 , B23K2103/52 , H01L21/486 , H01L21/76802 , H05K3/0035 , H05K3/0038 , H05K3/427
摘要： A diode-pumped, solid-state laser (52) of a laser system (50) provides ultraviolet Gaussian output (54) that is converted by a diffractive optical element (90) into shaped output (94) having a uniform irradiance profile. A high percentage of the shaped output (94) is focused through an aperture of a mask (98) to provide imaged to provide imaged shaped output (118). The laser system (50) facilitates a method for increasing the throughput of a via drilling process over that available with an analogous clipped Gaussian laser system. This method is particularly advantageous for drilling blind vias (20b) that have better edge, bottom, and taper qualities than those produced by a clipped Gaussian laser system. An alternative laser system (150) employs a pair of beam diverting galvanometer mirrors (152, 154) that directs the Gaussian output around a shaped imaging system (70) that includes a diffractive optical element (90) and a mask (98). Laser system (150) provides a user with the option of using either a Gaussian output or an imaged shaped output (118).
摘要翻译：激光系统（50）的二极管泵浦的固态激光器（52）提供由衍射光学元件（90）转换成具有均匀辐照度分布的成形输出（94）的紫外高斯输出（54）。高百分比的成形输出（94）通过掩模（98）的孔聚焦以提供成像以提供成像的成形输出（118）。激光系统（50）有助于提高通孔钻孔过程的吞吐量超过类似的限幅高斯激光系统可用的方法。该方法对于具有比由高斯激光系统产生的那些具有更好的边缘，底部和锥度特性的盲孔（20b）特别有利。替代的激光系统（150）使用一对光束转向电流计反射镜（152,154），其引导围绕包括衍射光学元件（90）和掩模（98）的成形成像系统（70）的高斯输出。激光系统（150）向用户提供使用高斯输出或成像形状输出（118）的选项。

4. 发明授权

US06407363B2 Laser system and method for single press micromachining of multilayer workpieces 有权
标题翻译：多层工件单压机加工激光系统及方法
公开(公告)号：US06407363B2
公开(公告)日：2002-06-18
申请号：US09823922
申请日：2001-03-30
申请人： Corey M. Dunsky , Ho W. Lo , Ken Whiteman , Donald R. Wilt , Spencer Barrett , Raman Sudhakar
发明人： Corey M. Dunsky , Ho W. Lo , Ken Whiteman , Donald R. Wilt , Spencer Barrett , Raman Sudhakar
IPC分类号： B23K2600
CPC分类号： B23K26/046 , B23K26/02 , B23K26/042 , B23K26/073 , B23K26/08 , B23K26/082 , B23K26/3568 , B23K26/384 , B23K26/389 , B23K26/702 , B23K26/707 , H01L21/486 , H05K3/0038 , H05K3/384 , H05K2203/108
摘要： A single pass actuator (70, 200), such as a deformable mirror (70), quickly changes, preferably in less than 1 ms, the focus and hence the spot size of ultraviolet or visible wavelength laser pulses to change the fluence of the laser output (66) at the workpiece surface between at least two different fluence levels to facilitate processing top metallic layers (264) at higher fluences and underlying dielectric layers (266) at lower fluences to protect bottom metallic layers (268). The focus change is accomplished without requiring Z-axis movement of the laser positioning system (62). In addition, the spot size can be changed advantageously during trepanning operations to decrease via taper, reduce lip formation, increase throughput, and/or minimize damage.
摘要翻译：诸如可变形反射镜（70）的单程致动器（70,200）优选地在焦点上优选地在少于1毫秒内改变，因此，紫外或可见波长激光脉冲的光点尺寸改变激光器的注量在至少两个不同的注量级之间的工件表面处输出（66），以便于以更低的流量处理顶部金属层（264）并且以较低的流量处理下面的介电层（266）以保护底部金属层（268）。在不需要激光定位系统（62）的Z轴移动的情况下实现聚焦改变。另外，在切割操作期间可以有利地改变光斑尺寸，以减小通过锥度，减少唇形成，增加生产量和/或最小化损伤。

5. 发明授权

US4993789A Dual wavelength polarization selective holographic optical element 失效
标题翻译：双波长偏振选择全息光学元件
公开(公告)号：US4993789A
公开(公告)日：1991-02-19
申请号：US244923
申请日：1988-09-15
申请人： Jonathan R. Biles , Ho W. Lo
发明人： Jonathan R. Biles , Ho W. Lo
IPC分类号： G02B5/32 , G02B27/28
CPC分类号： G02B27/283 , G02B5/32
摘要： A polarization-selective holographic element having first and second holographic layers, each holographic layer including holograms comprising a plurality of fringes which are recorded with light having a first wavelength .lambda..sub.1. The holographic optical element transmits a first component of light having a second wavelength .lambda..sub.2 without diffraction and diffracts a second component of the light having the second wavelength by a selected angle. The holograms have a high diffraction efficiency and are recorded with beams making angles .sigma..sub.1 and .sigma..sub.2 with a normal to the surface of the holographic layers, where .vertline..theta..sub.2 -.theta..sub.1 .vertline.=.vertline..sigma..sub.2 -.sigma..sub.1 .vertline.=2.alpha., .lambda..sub.2 /(sin.theta..sub.1 +sin.theta..sub.2)=.lambda..sub.1 /(sin.theta..sub.1 +sin.theta..sub.2), and .theta..sub.1 and .theta..sub.2 are the incident and diffracted angles of the second component of the light having the second wavelength.
摘要翻译：一种具有第一和第二全息层的偏振选择性全息元件，每个全息图层包括全息图，该全息图包括以第一波长λ1的光记录的多个条纹。全息光学元件透射具有第二波长λ的光的第一分量 2，而不衍射，并将具有第二波长的光的第二分量衍射成选定的角度。全息图具有高的衍射效率，并用与全息层的表面垂直的光束制作角度σ1和σ2进行记录，其中|θ2θ1 | = | sigma 2-sigma 1 | =2α， λ2 /（sinθ1 +sinθ2）=λ1 /（sinθ1 +sinθ2），θ1和θ2是具有第二波长的光的第二分量的入射角和衍射角。

6. 发明授权

US06791060B2 Beam shaping and projection imaging with solid state UV gaussian beam to form vias 有权
标题翻译：光束成形和投影成像与固态紫外高斯光束形成通孔
公开(公告)号：US06791060B2
公开(公告)日：2004-09-14
申请号：US10325600
申请日：2002-12-19
申请人： Corey M. Dunsky , Xinbing Liu , Nicholas J. Croglio , Ho W. Lo , Bryan C. Gundrum , Hisashi Matsumoto
发明人： Corey M. Dunsky , Xinbing Liu , Nicholas J. Croglio , Ho W. Lo , Bryan C. Gundrum , Hisashi Matsumoto
IPC分类号： B23K2638
CPC分类号： B23K26/0734 , B23K26/0732 , B23K26/382 , B23K26/389 , B23K26/40 , B23K2101/35 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/42 , B23K2103/50 , B23K2103/52 , H05K3/0038
摘要： A diode-pumped, solid-state laser (52) of a laser system (50) provides ultraviolet Gaussian output (54) that is converted by a diffractive optical element (90) into shaped output (94) having a uniform irradiance profile. A high percentage of the shaped output (94) is focused through an aperture of a mask (98) to provide imaged to provide imaged shaped output (118). The laser system (50) facilitates a method for increasing the throughput of a via drilling process over that available with an analogous clipped Gaussian laser system. This method is particularly advantageous for drilling blind vias (20b) that have better edge, bottom, and taper qualities than those produced by a clipped Gaussian laser system. An alternative laser system (150) employs a pair of beam diverting galvanometer mirrors (152, 154) that directs the Gaussian output around a shaped imaging system (70) that includes a diffractive optical element (90) and a mask (98). Laser system (150) provides a user with the option of using either a Gaussian output or an imaged shaped output (118).
摘要翻译：激光系统（50）的二极管泵浦的固态激光器（52）提供由衍射光学元件（90）转换成具有均匀辐照度分布的成形输出（94）的紫外高斯输出（54）。高百分比的成形输出（94）通过掩模（98）的孔聚焦以提供成像以提供成像的成形输出（118）。激光系统（50）有助于提高通孔钻孔过程的吞吐量超过类似的限幅高斯激光系统可用的方法。该方法对于具有比由高斯激光系统产生的那些具有更好的边缘，底部和锥度特性的盲孔（20b）特别有利。替代的激光系统（150）使用一对光束转向电流计反射镜（152,154），其引导围绕包括衍射光学元件（90）和掩模（98）的成形成像系统（70）的高斯输出。激光系统（150）向用户提供使用高斯输出或成像形状输出（118）的选项。

7. 发明授权

US5057664A Method and apparatus for laser processing a target material to provide a uniformly smooth, continuous trim profile 失效
标题翻译：用于激光处理目标材料以提供均匀平滑且连续的修剪轮廓的方法和装置
公开(公告)号：US5057664A
公开(公告)日：1991-10-15
申请号：US424802
申请日：1989-10-20
申请人： Joel C. Johnson , Ho W. Lo , David Rowley , Terri J. Irland
发明人： Joel C. Johnson , Ho W. Lo , David Rowley , Terri J. Irland
IPC分类号： B23K26/00 , B23K26/06
CPC分类号： B23K26/06 , B23K26/064 , B23K26/351
摘要： A diode-pumped laser system (10) incorporates a polarization state control device (12) that provides a trim profile (84) having minimal striations (64) on a target material (42). The striations run generally parallel to the polarization direction of laser output light beam (L) and are diminished whenever the polarization direction is parallel to the laser trimming direction. The striations are substantially eliminated by circularly or randomly polarizing the laser output light beam.
摘要翻译：二极管泵浦激光系统（10）包括偏振状态控制装置（12），其提供在目标材料（42）上具有最小条纹（64）的修剪轮廓（84）。条纹通常平行于激光输出光束（L）的偏振方向平行，并且每当偏振方向平行于激光修整方向时减小。通过圆形或随机偏振激光输出光束，基本上消除了条纹。

8. 发明授权

US07494900B2 Back side wafer dicing 有权
标题翻译：背面晶圆切片
公开(公告)号：US07494900B2
公开(公告)日：2009-02-24
申请号：US11441453
申请日：2006-05-25
申请人： Richard S. Harris , Ho W. Lo
发明人： Richard S. Harris , Ho W. Lo
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/04 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/67092
摘要： Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
摘要翻译：用于划片半导体晶片的系统和方法，其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。半导体晶片从其后侧划线。在一个实施例中，在背面研磨过程之后但在去除背面研磨带之前，对晶片的背面进行划线。因此，防止从划线工艺产生的碎屑沉积在晶片的顶表面上。为了确定相对于晶片背面的切割车道或街道的位置，用构造成穿过研磨带和晶片的光来照射晶片的顶侧。从晶片的背面检测光，并且相对于背面映射街道。然后用锯或激光切割晶片的背面。

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