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1. 发明授权

US06243283B1 Impedance control using fuses 有权
标题翻译：使用熔断器进行阻抗控制
公开(公告)号：US06243283B1
公开(公告)日：2001-06-05
申请号：US09589922
申请日：2000-06-07
申请人： Claude Louis Bertin , John A. Fifield , Erik Leigh Hedberg , Russell J. Houghton , Timothy Dooling Sullivan , Steven William Tomashot , William Robert Tonti
发明人： Claude Louis Bertin , John A. Fifield , Erik Leigh Hedberg , Russell J. Houghton , Timothy Dooling Sullivan , Steven William Tomashot , William Robert Tonti
IPC分类号： G11C506
CPC分类号： H01L23/481 , G11C17/16 , H01L25/0657 , H01L2224/06181 , H01L2224/13025 , H01L2224/16 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2224/48227 , H01L2224/4826 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06562 , H01L2225/06589 , H01L2225/06596 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/10253 , H01L2924/13091 , H01L2924/15192 , H01L2924/181 , H01L2924/3011 , H01L2924/00 , H01L2924/00012
摘要： A system and method for reducing impedance loading of semiconductor integrated circuit devices implementing protective device structures that contributes to impedance loading at an I/O pad connection. The method comprises providing a fuse device between the I/O pad connection and the protective device; connecting a current source device associated with each fuse device in the integrated circuit, the current source device connected to one end of the fuse device; providing fuse selection circuit for activating current flow through a selected fuse device between the current source and the I/O connection, the current flow being of an amount sufficient for blowing the fuse and disconnecting the protective device from the circuit structure, thereby reducing impedance loading at the I/O connection. Such a system and method is employed in a memory system comprising integrated circuit chips disposed in a stacked relation, with each chip including: a layer of active circuitry formed at a first layer of each chip; a plurality of through conducting structures disposed substantially vertically through each chip for enabling electronic connection with active circuitry at the first layer; second conducting device disposed at an end of the through conducting structure at an opposite side of a chip for connection with a corresponding through conductive structure of an adjacent stacked chip, the stacked chip structure formed by aligning one or more through conducting structures and second conducting devices of adjacent chips, whereby a chip of the stack is electronically connected to active circuitry formed on other chips of the stack. The stacked chip structure is ideal for reducing data access latency in memory systems employing memory chips such as DRAM.
摘要翻译：一种用于减少半导体集成电路器件的阻抗负载的系统和方法，其实现了有助于I / O焊盘连接处的阻抗加载的保护器件结构。该方法包括在I / O焊盘连接和保护装置之间设置熔丝装置; 连接与所述集成电路中的每个熔丝装置相关联的电流源装置，所述电流源装置连接到所述熔丝装置的一端; 提供保险丝选择电路，用于在电流源和I / O连接之间激活通过选定的保险丝装置的电流流动，电流量足以吹入保险丝并将保护装置与电路结构断开，从而减少阻抗负载在I / O连接。这种系统和方法被用在包括以堆叠关系布置的集成电路芯片的存储器系统中，每个芯片包括：形成在每个芯片的第一层的有源电路层; 多个通过导电结构，其基本垂直设置穿过每个芯片，以使得能够与第一层处的有源电路电连接; 第二导电装置，其设置在通孔导电结构的与芯片相对侧的端部处，与相邻的堆叠芯片的相应的贯穿导电结构相连接，所述堆叠的芯片结构通过将一个或多个穿过导电结构和第二导电装置的相邻芯片，由此堆叠的芯片电连接到形成在堆叠的其他芯片上的有源电路。堆叠式芯片结构非常适用于采用诸如DRAM之类的存储器芯片的存储器系统中的数据访问延迟。

2. 发明授权

US6141245A Impedance control using fuses 有权
标题翻译：使用熔断器进行阻抗控制
公开(公告)号：US6141245A
公开(公告)日：2000-10-31
申请号：US302902
申请日：1999-04-30
申请人： Claude Louis Bertin , John A. Fifield , Erik Leigh Hedberg , Russell J. Houghton , Timothy Dooling Sullivan , Steven William Tomashot , William Robert Tonti
发明人： Claude Louis Bertin , John A. Fifield , Erik Leigh Hedberg , Russell J. Houghton , Timothy Dooling Sullivan , Steven William Tomashot , William Robert Tonti
IPC分类号： H01L27/02 , G11C17/16 , H01L25/065 , G11C16/04
CPC分类号： H01L23/481 , G11C17/16 , H01L25/0657 , H01L2224/06181 , H01L2224/13025 , H01L2224/16 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2224/48227 , H01L2224/4826 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06562 , H01L2225/06589 , H01L2225/06596 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/10253 , H01L2924/13091 , H01L2924/15192 , H01L2924/181 , H01L2924/3011
摘要： A system and method for reducing impedance loading of semiconductor integrated circuit devices implementing protective device structures that contributes to impedance loading at an I/O pad connection. The method comprises providing a fuse device between the I/O pad connection and the protective device; connecting a current source device associated with each fuse device in the integrated circuit, the current source device connected to one end of the fuse device; providing fuse selection circuit for activating current flow through a selected fuse device between the current source and the I/O connection, the current flow being of an amount sufficient for blowing the fuse and disconnecting the protective device from the circuit structure, thereby reducing impedance loading at the I/O connection. Such a system and method is employed in a memory system comprising integrated circuit chips disposed in a stacked relation, with each chip including: a layer of active circuitry formed at a first layer of each chip; a plurality of through conducting structures disposed substantially vertically through each chip for enabling electronic connection with active circuitry at the first layer; second conducting device disposed at an end of the through conducting structure at an opposite side of a chip for connection with a corresponding through conductive structure of an adjacent stacked chip, the stacked chip structure formed by aligning one or more through conducting structures and second conducting devices of adjacent chips, whereby a chip of the stack is electronically connected to active circuitry formed on other chips of the stack. The stacked chip structure is ideal for reducing data access latency in memory systems employing memory chips such as DRAM.
摘要翻译：一种用于减少半导体集成电路器件的阻抗负载的系统和方法，其实现了有助于I / O焊盘连接处的阻抗加载的保护器件结构。该方法包括在I / O焊盘连接和保护装置之间设置熔丝装置; 连接与所述集成电路中的每个熔丝装置相关联的电流源装置，所述电流源装置连接到所述熔丝装置的一端; 提供保险丝选择电路，用于在电流源和I / O连接之间激活通过选定的保险丝装置的电流流动，电流量足以吹入保险丝并将保护装置与电路结构断开，从而减少阻抗负载在I / O连接。这种系统和方法被用在包括以堆叠关系布置的集成电路芯片的存储器系统中，每个芯片包括：形成在每个芯片的第一层的有源电路层; 多个通过导电结构，其基本垂直设置穿过每个芯片，以使得能够与第一层处的有源电路电连接; 第二导电装置，其设置在通孔导电结构的与芯片相对侧的端部处，与相邻的堆叠芯片的相应的贯穿导电结构相连接，所述堆叠的芯片结构通过将一个或多个穿过导电结构和第二导电装置的相邻芯片，由此堆叠的芯片电连接到形成在堆叠的其他芯片上的有源电路。堆叠式芯片结构非常适用于采用诸如DRAM之类的存储器芯片的存储器系统中的数据访问延迟。

3. 发明授权

US07098083B2 High impedance antifuse 失效
标题翻译：高阻抗反熔丝
公开(公告)号：US07098083B2
公开(公告)日：2006-08-29
申请号：US10652534
申请日：2003-08-29
申请人： John A. Fifield , Russell J. Houghton , William R. Tonti
发明人： John A. Fifield , Russell J. Houghton , William R. Tonti
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011 , Y10S438/957 , H01L2924/00
摘要： A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between the substrate and said electrode of said second device, said second insulator having a second value of said given characteristic that is different from said first value. The electrodes of the diode and the FET are coupled to one another, and a source of programming energy is coupled to the diode to cause it to permanently decrease in resistivity when programmed. The programmed state of the diode is indicated by a current in the FET, which is read by a sense latch. Thus a small resistance change in the diode translates to a large signal gain/change in the latch. This allows the diode to be programmed at lower voltages.
摘要翻译：一种可编程元件，其具有第一二极管，其具有电极和设置在所述基板和所述第一器件的所述电极之间的第一绝缘体，所述第一绝缘体具有给定特性的第一值，以及设置有电极和第二绝缘体的FET 在所述基板和所述第二装置的所述电极之间，所述第二绝缘体具有与所述第一值不同的所述给定特性的第二值。二极管和FET的电极彼此耦合，并且编程能量源耦合到二极管，以使其在编程时永久地降低电阻率。二极管的编程状态由FET中的电流表示，该电流由读出锁存器读取。因此，二极管中的小电阻变化转换为锁存器中的大信号增益/变化。这允许二极管在较低的电压下被编程。

4. 发明授权

US06177807B1 High frequency valid data strobe 失效
标题翻译：高频有效数据选通
公开(公告)号：US06177807B1
公开(公告)日：2001-01-23
申请号：US09322465
申请日：1999-05-28
申请人： Claude L. Bertin , John A. Fifield , Erik L. Hedberg , Russell J. Houghton , William R. Tonti
发明人： Claude L. Bertin , John A. Fifield , Erik L. Hedberg , Russell J. Houghton , William R. Tonti
IPC分类号： G03K1716
CPC分类号： G06F13/4086 , H03K5/06 , H04L25/0298
摘要： A processor with a memory send/received control circuit including a bus drive circuit and a detector circuit connected via control bus line to the control input of the memory. A data input line, or output line, or data input/output line is connected between the processor and the memory. A transmission line stub having a length that is incrementally variable is connected to the memory control input side of the control line 14. The impedance Z0 of the transmission line stub is equal to that of the control line and is open circuited at the end which results in voltage doubling to achieve high speed synchronization between control signals and data signals and to ensure valid data at high clock rates.
摘要翻译：具有存储器发送/接收控制电路的处理器，包括总线驱动电路和经由控制总线连接到存储器的控制输入端的检测器电路。数据输入线或输出线或数据输入/输出线连接在处理器和存储器之间。具有递增可变长度的传输线短截线连接到控制线14的存储器控制输入侧。传输线短截线的阻抗Z0等于控制线的阻抗Z0，并在结束时开路在电压倍增以实现控制信号和数据信号之间的高速同步，并确保在高时钟速率下的有效数据。

5. 发明授权

US06577154B2 Constant impedance driver for high speed interface 有权
标题翻译：用于高速接口的恒定阻抗驱动器
公开(公告)号：US06577154B2
公开(公告)日：2003-06-10
申请号：US09848454
申请日：2001-05-03
申请人： John A. Fifield , Russell J. Houghton
发明人： John A. Fifield , Russell J. Houghton
IPC分类号： H03K1716
CPC分类号： H04L25/028 , H03K19/00384 , H04L25/0278
摘要： A compensated driver for maintaining constant impedance during data transfer from an integrated circuit comprises an output portion having an output device to transfer data from the integrated circuit and a mimic circuit portion having a sample output device scaled to a fraction of the output device adapted to accept a reference current and generate a sample voltage. A mimic circuit portion has a sample output device scaled to a fraction of the output device adapted to accept a reference current and generate a sample voltage. A differential amplifier portion is adapted to generate a control voltage in response to a reference voltage and the sample voltage. A predrive portion applies either a ground or the predetermined control voltage from the differential amplifier portion to the output stage portion in response to an input, the control voltage regulating the output device in the output stage portion to achieve a more constant impedance.
摘要翻译：用于在从集成电路进行数据传输期间保持恒定阻抗的补偿驱动器包括具有输出装置以从集成电路传送数据的输出部分和具有缩放到适于接受的输出装置的一部分的样本输出装置的模拟电路部分参考电流并产生采样电压。模拟电路部分具有缩放到适于接受参考电流并且产生采样电压的输出设备的一部分的采样输出设备。差分放大器部分适于响应于参考电压和采样电压而产生控制电压。预驱动部分响应于输入将来自差分放大器部分的接地或预定控制电压施加到输出级部分，控制电压调节输出级部分中的输出器件以实现更恒定的阻抗。

6. 发明授权

US06384666B1 Antifuse latch device with controlled current programming and variable trip point 有权
标题翻译：具有受控电流编程和可变跳变点的防漏锁存器件
公开(公告)号：US06384666B1
公开(公告)日：2002-05-07
申请号：US09816030
申请日：2001-03-23
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Nicholas M. van Heel
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Nicholas M. van Heel
IPC分类号： H01H3776
CPC分类号： G11C17/18
摘要： A latch device is provided having a variable resistive trip point and controlled current programming. The latch device has a trip point current control element that controls an amount of current passing from a voltage source into the latch circuit, thereby varying the resistive trip point of the latch device. The latch device also has a programming current control element that controls an amount of programming current passing through the fuse element during programming. The trip point current reference and a programming current reference are provided by reference circuits having a plurality of selectable inputs that operate to change the current references binarily. An integrated circuit is also provided in which a plurality of the fuse latch devices are connected together in parallel such that the same trip point current reference and programming current reference are supplied to each latch device.
摘要翻译：提供具有可变电阻跳变点和受控电流编程的锁存器件。闩锁装置具有跳闸电流控制元件，其控制从电压源流入锁存电路的电流量，从而改变闩锁装置的电阻性跳变点。闩锁装置还具有编程电流控制元件，其控制在编程期间通过熔丝元件的编程电流量。跳变点电流基准和编程电流基准由具有多个可选择输入的参考电路提供，所述多个可选输入用于二次改变当前基准。还提供一种集成电路，其中多个熔丝锁存器件并联连接在一起，使得相同的跳变点电流参考和编程电流基准被提供给每个锁存器件。

7. 发明授权

US06268748B1 Module with low leakage driver circuits and method of operation 失效
标题翻译：具有低泄漏驱动电路的模块和操作方法
公开(公告)号：US06268748B1
公开(公告)日：2001-07-31
申请号：US09073517
申请日：1998-05-06
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , William R. Tonti
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , William R. Tonti
IPC分类号： G03K19094
CPC分类号： G11C7/1069 , G11C7/1051 , H03K19/0016 , H03K19/09429
摘要： An electronic semiconductor module, either memory or logic, having a driver circuit which includes a multiplicity of driver transistors, together with circuitry for simultaneously applying a first positive bias to a first select number of driver transistors to activate them to an operational state, a second positive bias to a second select number of driver transistors to place them in readiness for activation, and a negative bias to the remaining driver transistors to place them in a fully inactive state thereby reducing noise in the driver circuit. The first positive bias is greater than the transistor threshold voltage, preferably greater than two volts, the second positive bias is less than the threshold voltage, preferably less than one volt, and the negative bias is in the order of minus 0.3 volt. A method of reducing noise in the electronic semiconductor module is also described and includes the applying of a positive bias to a first select number of the transistors to activate them while simultaneously applying a second positive bias to a second select number of the transistors to ready them for activation, and a negative voltage to the remaining transistors to place each in a inactive condition.
摘要翻译：一种电子半导体模块，无论是存储器还是逻辑，具有包括多个驱动器晶体管的驱动器电路，以及用于同时向第一选择数量的驱动器晶体管施加第一正偏置以将其激活到操作状态的电路，第二对第二选择数量的驱动器晶体管施加正偏置以使它们准备激活，以及对其余驱动器晶体管的负偏置以将它们置于完全无效状态，从而降低驱动器电路中的噪声。第一正偏压大于晶体管阈值电压，优选大于2伏，第二正偏压小于阈值电压，优选小于1伏特，负偏压为零下0.3伏。还描述了降低电子半导体模块中的噪声的方法，并且包括将正偏压施加到第一选择数量的晶体管以激活它们，同时向第二选择数量的晶体管施加第二正偏置以准备它们用于激活，并且向剩余晶体管施加负电压以使其处于非活动状态。

8. 发明授权

US06177817B1 Compensated-current mirror off-chip driver 有权
标题翻译：补偿电流镜像片外驱动器
公开(公告)号：US06177817B1
公开(公告)日：2001-01-23
申请号：US09283960
申请日：1999-04-01
申请人： John A. Fifield , Russell J. Houghton , Adam B. Wilson
发明人： John A. Fifield , Russell J. Houghton , Adam B. Wilson
IPC分类号： H03K300
CPC分类号： H03K19/00361 , G05F3/242 , H03K19/00384
摘要： An off-chip driver circuit with compensated current source including a reference current amplifier and an output driver with a pull-up section. The reference current amplifier includes an input voltage Vcmn from an on chip current reference source. A reference current is established in the reference current amplifier by choosing the Beta of transistor in a current path. A feature of the circuit is that an output current is produced in the output lead of the driver circuit that is proportional to the current in the reference current amplifier, but with adjustments made for the supply voltage level and effective transistor channel length, Leff. Another feature of the circuit is that a reference current-voltage is established on the output lead of the reference current amplifier that is primarily determined by a multiple of the reference current but is reduced by a function of the supply voltage. In the circuit the output current of the driver is reduced linearly and predictably with the supply voltage.
摘要翻译：具有补偿电流源的片外驱动电路，包括参考电流放大器和具有上拉部分的输出驱动器。参考电流放大器包括来自片上电流参考源的输入电压Vcmn。通过在电流通路中选择晶体管的β，在参考电流放大器中建立参考电流。该电路的一个特征是在驱动电路的输出引线中产生与参考电流放大器中的电流成比例的输出电流，但是对电源电压电平和有效晶体管通道长度Leff进行了调整。电路的另一个特征是在参考电流放大器的输出引线上建立一个参考电流电压，该参考电流电压主要由参考电流的倍数决定，但是由电源电压的函数所减小。在电路中，驱动器的输出电流以电源电压线性和可预测地减小。

9. 发明授权

US5757693A Gain memory cell with diode 失效
标题翻译：增益二极管存储单元
公开(公告)号：US5757693A
公开(公告)日：1998-05-26
申请号：US803056
申请日：1997-02-19
申请人： Russell J. Houghton , Claude L. Bertin , John A. Fifield , Christopher P. Miller , William R. Tonti
发明人： Russell J. Houghton , Claude L. Bertin , John A. Fifield , Christopher P. Miller , William R. Tonti
IPC分类号： G11C11/402 , G11C11/403 , G11C11/405 , G11C11/24
CPC分类号： G11C11/405 , G11C11/403
摘要： A gain cell in a memory array having read and write bitlines and wordlines, wherein the gain cell comprises a write transistor, a storage node, a read transistor, and a diode is disclosed. The write transistor allows the value of the write bitline to be stored onto the storage node when activated by the write wordline. The read transistor, which allows the stored value to be read, is coupled to the storage node and to the read bitline via the diode. The diode prevents the conduction of the read transistor in the opposite direction, thus preventing read interference from other cells and reducing bitline capacitance.
摘要翻译：具有读和写位线和字线的存储器阵列中的增益单元，其中增益单元包括写晶体管，存储节点，读晶体管和二极管。当由写入字线激活时，写入晶体管允许将写入位线的值存储到存储节点上。允许读取存储值的读取晶体管通过二极管耦合到存储节点和读取位线。二极管防止读取晶体管在相反方向的导通，从而防止来自其他单元的读取干扰并减少位线电容。

10. 发明授权

US06518827B1 Sense amplifier threshold compensation 有权
标题翻译：感应放大器阈值补偿
公开(公告)号：US06518827B1
公开(公告)日：2003-02-11
申请号：US09917059
申请日：2001-07-27
申请人： John A. Fifield , Robert H. Dennard , Russell J. Houghton , Toshiaki Kirihara , Wing Luk
发明人： John A. Fifield , Robert H. Dennard , Russell J. Houghton , Toshiaki Kirihara , Wing Luk
IPC分类号： H03K301
CPC分类号： G11C7/04 , G11C7/06 , G11C11/4091 , G11C2207/2254
摘要： A method and system are disclosed for adjusting the threshold in MOS devices, in particular for devices used in DRAM sense amplifiers. The effects of process and temperature variations on the threshold are compensated by a back-bias voltage. A comparison of an indicating voltage and a reference voltage is used to generate the back-bias voltage. The direction of back-bias voltage may be either in the backward, or in the forward bias direction.
摘要翻译：公开了用于调整MOS器件中的阈值的方法和系统，特别是用于DRAM读出放大器中的器件。工艺和温度变化对阈值的影响由反向偏置电压补偿。使用指示电压和参考电压的比较来产生反偏压。背向偏置电压的方向可以是向后偏置方向或向前偏置方向。

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