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1. 发明授权

US06447689B1 Protective layer for continuous GMR design using reverse photo mask 失效
标题翻译：使用反光掩模进行连续GMR设计的保护层
公开(公告)号：US06447689B1
公开(公告)日：2002-09-10
申请号：US09584424
申请日：2000-06-05
申请人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
发明人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F41/308
摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.
摘要翻译：公开了一种制造具有埋地引线的自旋阀结构的改进方法。一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。该保护层在光刻胶（用于限定自旋阀相对于埋入引线和纵向偏置层的位置）被去除时就位。在形成自旋阀本身之前，保护层随后被除去，作为表面清洁的天然副产物。

2. 发明授权

US06428714B1 Protective layer for continuous GMR design 失效
标题翻译：连续GMR设计的保护层
公开(公告)号：US06428714B1
公开(公告)日：2002-08-06
申请号：US09584426
申请日：2000-06-05
申请人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
发明人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , H01F41/308
摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.
摘要翻译：公开了一种制造具有埋地引线的自旋阀结构的改进方法。一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。该保护层保持原位，同时形成埋入引线以及纵向偏置装置。处理包括使用光致抗蚀剂剥离。在形成自旋阀之前，保护层作为表面清洁的天然副产物被去除。

3. 发明授权

US06322640B1 Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element 失效
标题翻译：用于形成反铁磁交换偏磁电阻（MR）传感器元件的多重热退火方法
公开(公告)号：US06322640B1
公开(公告)日：2001-11-27
申请号：US09489969
申请日：2000-01-24
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
IPC分类号： H01F4100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/302 , H01L43/12 , Y10T29/49034
摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.
摘要翻译：一种用于形成磁偏置磁阻（MR）层的方法。首先提供基板。然后在衬底上形成铁磁磁阻（MR）材料层。然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

4. 发明授权

US06291087B1 Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias 失效
标题翻译：具有增强的电阻率敏感性和增强的磁交换偏置的磁阻（MR）传感器元件
公开(公告)号：US06291087B1
公开(公告)日：2001-09-18
申请号：US09336786
申请日：1999-06-21
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Kochan Ju , Cheng Horng , Jei-Wei Chang
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Kochan Ju , Cheng Horng , Jei-Wei Chang
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3954 , G11B5/66 , G11B2005/3996 , Y10S428/90 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T428/1121
摘要： A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.
摘要翻译：一种用于形成磁阻（MR）传感器元件的方法和根据该方法制造的磁阻传感器元件。首先提供基板。然后在衬底上形成磁阻（MR）层，包括：（1）由第一磁阻（MR）材料形成的磁阻（MR）层的体层，其被优化以提供增强的磁阻（MR）电阻率敏感性磁阻（MR）层; 和（2）由第二磁阻（MR）材料形成的磁阻（MR）层的表面层，其优化以在磁阻（MR）层的表面层上形成磁交换偏置层时提供增强的磁交换偏压。最后，在磁阻（MR）层的表面层上形成磁交换偏置层。该方法考虑了根据该方法制造的磁阻（MR）传感器元件。该方法对于通过采用具有单独的阻挡温度的单个磁交换偏压材料形成双重磁阻（DSMR）传感器元件特别有用。

5. 发明授权

US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效
公开(公告)号：US6103136A
公开(公告)日：2000-08-15
申请号：US46007
申请日：1998-03-23
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
IPC分类号： G01R33/09 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

6. 发明授权

US06345435B1 Method to make laminated yoke for high data rate giant magneto-resistive head 失效
标题翻译：用于高数据速率巨磁阻头的叠片磁轭的方法
公开(公告)号：US06345435B1
公开(公告)日：2002-02-12
申请号：US09443448
申请日：1999-11-22
申请人： Cherng-Chyi Han , Chyu-Jiuh Torng , Rodney Lee , Kochan Ju
发明人： Cherng-Chyi Han , Chyu-Jiuh Torng , Rodney Lee , Kochan Ju
IPC分类号： G11B542
CPC分类号： G11B5/59683 , G11B5/4813 , G11B5/5521 , Y10T29/49044 , Y10T29/49046
摘要： A method and design for the fabrication of a laminated yoke for a high data rate magnetic read-write transducer head. A full film layer of first ferromagnetic material is formed on a base using either plating or sputtering. The base comprises a read head, a ferromagnetic pole piece, and a ferromagnetic shield which also serves as a pole piece. A patterned layer of first non-magnetic dielectric is then formed on the full film layer of first ferromagnetic material. A patterned layer of photoresist is then formed on the full film layer of first ferromagnetic material and the patterned non-magnetic dielectric and used as a frame for a frame plating deposition of a patterned layer of second ferromagnetic material. The full film layer of first ferromagnetic material and the non-magnetic dielectric are then patterned, using the patterned layer of second ferromagnetic material as a mask and ion beam etching.
摘要翻译：一种用于制造用于高数据速率磁读写传感器头的层叠磁轭的方法和设计。使用电镀或溅射在基底上形成第一铁磁材料的完整膜层。基座包括读头，铁磁极片和铁磁屏蔽，其也用作极片。然后在第一铁磁材料的全部薄膜层上形成第一非磁性电介质的图案层。然后在第一铁磁材料和图案化非磁性电介质的完整膜层上形成图案化的光致抗蚀剂层，并用作用于第二铁磁材料的图案化层的框架电镀沉积的框架。然后使用第二铁磁材料的图案化层作为掩模和离子束蚀刻来对第一铁磁材料和非磁性介电体的全部膜层进行构图。

7. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

8. 发明申请

US20070041124A1 Narrow track CPP head with bias cancellation 有权
标题翻译：窄轨CPP头偏置消除
公开(公告)号：US20070041124A1
公开(公告)日：2007-02-22
申请号：US11588564
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/09
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

9. 发明授权

US07118680B2 Self-alignment scheme for enhancement of CPP-GMR 失效
标题翻译：用于增强CPP-GMR的自对准方案
公开(公告)号：US07118680B2
公开(公告)日：2006-10-10
申请号：US10718372
申请日：2003-11-20
申请人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
发明人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
IPC分类号： G11B5/39
CPC分类号： G11B5/1278 , Y10T29/49052
摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
摘要翻译：提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。所制造的传感器具有降低的电阻和增加的灵敏度。

10. 发明授权

US07111386B2 Lead plating method for GMR head manufacture 失效
公开(公告)号：US07111386B2
公开(公告)日：2006-09-26
申请号：US11266418
申请日：2005-11-03
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

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