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1. 发明授权

US07749911B2 Method for forming an improved T-shaped gate structure 失效
标题翻译：形成改进的T形门结构的方法
公开(公告)号：US07749911B2
公开(公告)日：2010-07-06
申请号：US11001514
申请日：2004-11-30
申请人： Chung-Cheng Wu , Wen-Ting Chu
发明人： Chung-Cheng Wu , Wen-Ting Chu
IPC分类号： H01L21/311
CPC分类号： H01L21/28114 , H01L21/31116 , H01L29/42376 , H01L29/66575
摘要： A T-shaped gate structure and method for forming the same the method including providing a semiconductor substrate comprising at least one overlying sacrificial layer; lithographically patterning a resist layer overlying the at least one sacrificial layer for etching an opening; forming the etched opening through a thickness of the at least one sacrificial layer to expose the semiconductor substrate, said etched opening comprising a tapered cross section having a wider upper portion compared to a bottom portion; and, backfilling the etched opening with a gate electrode material to form a gate structure.
摘要翻译：一种T形栅极结构及其形成方法，包括提供包括至少一个上覆牺牲层的半导体衬底; 光刻地图案化覆盖至少一个牺牲层的抗蚀剂层，以蚀刻开口; 通过所述至少一个牺牲层的厚度形成所述蚀刻开口以暴露所述半导体衬底，所述蚀刻开口包括与底部相比具有较宽上部的锥形横截面; 并且用栅电极材料回填蚀刻的开口以形成栅极结构。

2. 发明申请

US20060115938A1 Method for forming an improved T-shaped gate structure 失效
标题翻译：形成改进的T形门结构的方法
公开(公告)号：US20060115938A1
公开(公告)日：2006-06-01
申请号：US11001514
申请日：2004-11-30
申请人： Chung-Cheng Wu , Wen-Ting Chu
发明人： Chung-Cheng Wu , Wen-Ting Chu
IPC分类号： H01L21/338
CPC分类号： H01L21/28114 , H01L21/31116 , H01L29/42376 , H01L29/66575
摘要： A T-shaped gate structure and method for forming the same the method including providing a semiconductor substrate comprising at least one overlying sacrificial layer; lithographically patterning a resist layer overlying the at least one sacrificial layer for etching an opening; forming the etched opening through a thickness of the at least one sacrificial layer to expose the semiconductor substrate, said etched opening comprising a tapered cross section having a wider upper portion compared to a bottom portion; and, backfilling the etched opening with a gate electrode material to form a gate structure.
摘要翻译：一种T形栅极结构及其形成方法，包括提供包括至少一个上覆牺牲层的半导体衬底; 光刻地图案化覆盖至少一个牺牲层的抗蚀剂层，以蚀刻开口; 通过所述至少一个牺牲层的厚度形成所述蚀刻开口以暴露所述半导体衬底，所述蚀刻开口包括与底部相比具有较宽上部的锥形横截面; 并且用栅电极材料回填蚀刻的开口以形成栅极结构。

3. 发明授权

US6063548A Method for making DRAM using a single photoresist masking step for making capacitors with node contacts 有权
标题翻译：使用单个光致抗蚀剂掩模步骤制造DRAM以制造具有节点接触的电容器的方法
公开(公告)号：US6063548A
公开(公告)日：2000-05-16
申请号：US148565
申请日：1998-09-04
申请人： Wen-Ting Chu , Chung-Cheng Wu
发明人： Wen-Ting Chu , Chung-Cheng Wu
IPC分类号： H01L21/02 , H01L21/8242 , G03C5/00
CPC分类号： H01L28/92 , H01L27/10852
摘要： A method for forming stacked capacitors for DRAMs using a single photoresist mask and having bottom electrodes self-aligned to node contacts is achieved. A planar silicon oxide (SiO.sub.2) first insulating layer is formed over device areas. A first silicon nitride (Si.sub.3 N.sub.4) hard mask layer is deposited and a second insulating layer is deposited. First openings are etched, partially into the first insulating layer, for the capacitor bottom electrodes. A second Si.sub.3 N.sub.4 layer is deposited and etched back to form sidewall spacers in the first openings. The Si.sub.3 N.sub.4 hard mask and spacers are used to etch second openings (node contacts) in the first insulating layer, self-aligned in the first openings and to the source/drain contact areas. A first polysilicon layer is deposited and etched back to form recessed polysilicon plugs in the first openings. A third Si.sub.3 N.sub.4 layer is deposited and etched back to form sidewall spacers on the plugs in the first openings and is used as a mask to etch the polysilicon to form the vertical sidewalls of the bottom electrodes self-aligned to the node contacts. The first insulating layer is recessed to expose the bottom electrodes. An interelectrode dielectric layer is formed on the bottom electrodes, and a patterned second polysilicon layer is used for the top electrodes.
摘要翻译：实现了使用单个光致抗蚀剂掩模形成用于DRAM的堆叠电容器并且具有与节点接触自对准的底部电极的方法。在器件区域上形成平面氧化硅（SiO 2）第一绝缘层。沉积第一氮化硅（Si 3 N 4）硬掩模层并沉积第二绝缘层。对于电容器底部电极，第一开口部分地被蚀刻到第一绝缘层中。第二Si 3 N 4层被沉积并回蚀刻以在第一开口中形成侧壁间隔物。 Si 3 N 4硬掩模和间隔物用于蚀刻第一绝缘层中的第二开口（节点接触），在第一开口中和源/漏接触区域中自对准。沉积第一多晶硅层并将其回蚀刻以在第一开口中形成凹陷的多晶硅塞。沉积第三个Si 3 N 4层并回蚀刻以在第一开口中的插塞上形成侧壁间隔物，并且用作掩模以蚀刻多晶硅以形成与节点接触件自对准的底部电极的垂直侧壁。第一绝缘层凹进露出底部电极。在底部电极上形成电极间电介质层，并且将图案化的第二多晶硅层用于顶部电极。

4. 发明授权

US09312260B2 Integrated circuits and manufacturing methods thereof 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US09312260B2
公开(公告)日：2016-04-12
申请号：US13086186
申请日：2011-04-13
申请人： Ali Keshavarzi , Ta-Pen Guo , Helen Shu-Hui Chang , Hsiang-Jen Tseng , Shyue-Shyh Lin , Lee-Chung Lu , Chung-Cheng Wu , Li-Chun Tien , Jung-Chan Yang , Shu-Min Chen , Min Cao , Yung-Chin Hou
发明人： Ali Keshavarzi , Ta-Pen Guo , Helen Shu-Hui Chang , Hsiang-Jen Tseng , Shyue-Shyh Lin , Lee-Chung Lu , Chung-Cheng Wu , Li-Chun Tien , Jung-Chan Yang , Shu-Min Chen , Min Cao , Yung-Chin Hou
IPC分类号： H01L29/76 , H01L27/092 , H01L21/8238 , H01L23/485 , H01L27/02 , H01L29/423 , H01L29/66 , H01L29/78
CPC分类号： H01L27/092 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L29/0649 , H01L29/4238 , H01L29/495 , H01L29/66545 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.
摘要翻译：集成电路包括用于第一类型晶体管的第一扩散区域。第一类型晶体管包括第一漏极区域和第一源极区域。用于第二类型晶体管的第二扩散区域与第一扩散区域分离。第二类型晶体管包括第二漏极区域和第二源极区域。栅电极在布线方向上连续延伸穿过第一扩散区域和第二扩散区域。第一金属结构与第一源区电耦合。第二金属结构与第二漏区电耦合。第三金属结构设置在第一和第二金属结构之上并与第一和第二金属结构电耦合。第一金属结构体的宽度基本上等于或大于第三金属结构体的宽度。

5. 发明申请

US20090302911A1 FREQUENCY JITTER GENERATOR AND PWM CONTROLLER 失效
标题翻译：频率抖动发生器和PWM控制器
公开(公告)号：US20090302911A1
公开(公告)日：2009-12-10
申请号：US12347074
申请日：2008-12-31
申请人： Chen-Hsung Wang , Wei-Liang Kung , Chung-Cheng Wu
发明人： Chen-Hsung Wang , Wei-Liang Kung , Chung-Cheng Wu
IPC分类号： H03K3/017
CPC分类号： H03K3/017 , H03K3/84 , H03K4/502
摘要： A frequency jitter generator and a frequency jitter PWM controller are provided for overcoming the shortcoming that a conventional PWM controller reduces the electromagnetic interference issue by means of varying the operating frequency of the PWM controller based on an input voltage, while resulting in the uncertainty of the range of frequency jitter and the difficulty circuit design due to the effect of the input voltage and the load. The frequency jitter generator and PWM controller adjust the range of frequency jitter by using a signal within a fixed voltage range. The invention not only gets rid of the effect of the input voltage and the loading, but also simplifies the circuit design by fixing the range of frequency jitter no greater than a predetermined percentage regardless of the operating frequency of the PWM controller.
摘要翻译：提供了一种频率抖动发生器和频率抖动PWM控制器来克服传统PWM控制器通过基于输入电压改变PWM控制器的工作频率来减少电磁干扰问题的缺点，同时导致不确定性由于输入电压和负载的影响，频率抖动范围和电路设计难度大。频率抖动发生器和PWM控制器通过使用固定电压范围内的信号来调整频率抖动的范围。本发明不仅消除了输入电压和负载的影响，而且通过将频率抖动的范围固定为不大于预定百分比来简化电路设计，而不管PWM控制器的工作频率如何。

6. 发明授权

US07071515B2 Narrow width effect improvement with photoresist plug process and STI corner ion implantation 有权
标题翻译：使用光刻胶插塞工艺和STI角落离子注入的窄宽度效应改善
公开(公告)号：US07071515B2
公开(公告)日：2006-07-04
申请号：US10619114
申请日：2003-07-14
申请人： Yi-Ming Sheu , Da-Wen Lin , Cheng-Ku Chen , Po-Ying Yeh , Shi-Shung Peng , Chung-Cheng Wu
发明人： Yi-Ming Sheu , Da-Wen Lin , Cheng-Ku Chen , Po-Ying Yeh , Shi-Shung Peng , Chung-Cheng Wu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823481 , H01L21/26586 , H01L21/76237
摘要： A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A photoresist plug is formed in the shallow trench and is recessed below the top of the substrate to expose the top portion of the oxide liner. An angled indium implant through the oxide liner into the substrate is then performed. The plug is removed and an insulator is deposited to fill the trenches. After planarization and wet etch steps, formation of a gate dielectric layer and a patterned gate layer, the NMOS transistor exhibits an improved Vt roll-off of 40 to 45 mVolts for both long and short channels. The improvement is achieved with no degradation in junction or isolation performance. The indium implant dose and angle may be varied to provide flexibility to the process.
摘要翻译：描述了一种在NMOS晶体管中减小反向窄宽度效应的方法。氧化物衬垫沉积在形成为隔离衬底中的有源区域的浅沟槽中。在浅沟槽中形成光致抗蚀剂插塞，并且在衬底的顶部下方凹入以暴露氧化物衬垫的顶部部分。然后进行通过氧化物衬垫到衬底中的成角度的铟植入物。去除插头并沉积绝缘体以填充沟槽。在平坦化和湿蚀刻步骤之后，形成栅极介电层和图案化栅极层，NMOS晶体管对于长沟道和短沟道都表现出改善的Vt滚降为40至45毫伏。在不会降低结或隔离性能的情况下实现改进。可以改变铟注入剂量和角度以提供该过程的灵活性。

7. 发明授权

US07047348B2 Method and architecture for accessing hardware devices in computer system and chipset thereof 有权
标题翻译：用于访问计算机系统及其芯片组中的硬件设备的方法和架构
公开(公告)号：US07047348B2
公开(公告)日：2006-05-16
申请号：US10128471
申请日：2002-04-22
申请人： Chung-Cheng Wu
发明人： Chung-Cheng Wu
IPC分类号： G06F13/36 , G06F13/00 , G06F13/14 , G06F13/20
CPC分类号： G06F13/4027
摘要： A method and an architecture for accessing hardware devices in a computer system and the chipset thereof are provided. A bi-directional two-wired serial interface, for instance, a system management bus (SMB), is configured to connect an I/O device, such as a local area network adapter, to a system controller such as a southbridge or a northbridge chipset. The I/O device which includes a SMB master controller serves as a SMB master device for generating a clock signal and transmitting a data signal defined by the SMB protocol to the system controller according to the clock signal. The system controller which includes a PCI master and a SMB slave controller serves as a SMB slave device for receiving commands and data bytes in the data signal from the SMB master device to drive the PCI master to access the register block of peripherals and system memory of the computer system.
摘要翻译：提供了一种用于访问计算机系统中的硬件设备及其芯片组的方法和架构。双向双向串行接口，例如系统管理总线（SMB）被配置为将诸如局域网适配器的I / O设备连接到诸如南桥或北桥的系统控制器芯片组。包括SMB主控制器的I / O设备用作用于产生时钟信号并根据时钟信号将由SMB协议定义的数据信号发送到系统控制器的SMB主设备。包括PCI主机和SMB从控制器的系统控制器用作SMB从设备，用于从SMB主设备接收数据信号中的命令和数据字节，以驱动PCI主机访问外设寄存器块和系统存储器计算机系统。

8. 发明授权

US06777280B2 Method for fabricating an integrated circuit with a transistor electrode 有权
公开(公告)号：US06777280B2
公开(公告)日：2004-08-17
申请号：US10136498
申请日：2002-04-30
申请人： Li-Chun Li , Huoy-Jong Wu , Chung-Cheng Wu , Saysamone Pittikoun , Wen-Wei Lo
发明人： Li-Chun Li , Huoy-Jong Wu , Chung-Cheng Wu , Saysamone Pittikoun , Wen-Wei Lo
IPC分类号： H01L218238
CPC分类号： H01L27/10894 , H01L21/761 , H01L21/76202 , H01L27/10897
摘要： Dynamic Random Access Memory (DRAM) cells are formed in a P well formed in a biased deep N well (DNW). PMOS transistors are formed in N wells. The NMOS channels stop implant mask is modified not to be a reverse of the N well mask in order to block the channels stop implant from an N+ contact region used for DNW biasing. In DRAMs and other integrated circuits, a minimal spacing requirement between a well of an integrated circuit on the one hand and adjacent circuitry on the other hand is eliminated by laying out the adjacent circuitry so that the well is located adjacent to a transistor having an electrode connected to the same voltage as the voltage that biases the well. For example, in DRAMs, the minimal spacing requirement between the DNW and the read/write circuitry is eliminated by locating the DNW next to a transistor precharging the bit lines before memory accesses. One electrode of the transistor is connected to a precharge voltage. This electrode overlaps the DNW which is biased to the same precharge voltage. This electrode provides the DNW N+ contact region.

9. 发明授权

US5633520A Neuron MOSFET with different interpolysilicon oxide 失效
标题翻译：具有不同的多晶硅氧化物的神经元MOSFET
公开(公告)号：US5633520A
公开(公告)日：1997-05-27
申请号：US667609
申请日：1996-06-21
申请人： Chung-Cheng Wu , Ming-Tzong Yang
发明人： Chung-Cheng Wu , Ming-Tzong Yang
IPC分类号： H01L21/822 , H01L27/115 , H01L27/108 , H01L29/76 , H01L29/788
CPC分类号： H01L27/115 , H01L21/8221 , H01L29/788 , Y10S148/116 , Y10S148/117 , Y10S148/163 , Y10S438/981
摘要： An MOSFET device is fabricated with a plurality of conductors capacitively coupled to a first electrode, forming a mask on the surface of the first electrode exposing a predetermined zone of the first electrode, doping the first electrode through the mask, removing the mask from the surface of the first electrode, oxidizing the first electrode to form a layer of oxide over the first electrode with a thicker layer of oxide over the predetermined zone and a thinner layer of oxide elsewhere, forming at least one electrode over the first electrode on the thinner layer of oxide outside of the zone and forming at least one other electrode over the first electrode on the thicker layer of oxide inside the zone, whereby the one electrode and the other electrode have substantially different capacitive coupling to the electrode.
摘要翻译：制造具有电容耦合到第一电极的多个导体的MOSFET器件，在第一电极的表面上形成掩模，暴露第一电极的预定区域，通过掩模掺杂第一电极，从表面去除掩模在所述第一电极上氧化所述第一电极以在所述第一电极上形成氧化层以在所述预定区域上具有较厚的氧化物层，并且在其它地方形成更薄的氧化物层，在所述较薄层上的所述第一电极上形成至少一个电极的氧化物，并且在所述区域内的更厚的氧化物层上在所述第一电极上方形成至少一个其它电极，由此所述一个电极和所述另一个电极具有与所述电极基本上不同的电容耦合。

10. 发明授权

US08759943B2 Transistor having notched fin structure and method of making the same 有权
标题翻译：具有切口鳍结构的晶体管及其制造方法
公开(公告)号：US08759943B2
公开(公告)日：2014-06-24
申请号：US12900626
申请日：2010-10-08
申请人： Chih-Hung Tseng , Da-Wen Lin , Chien-Tai Chan , Chia-Pin Lin , Li-Wen Weng , An-Shen Chang , Chung-Cheng Wu
发明人： Chih-Hung Tseng , Da-Wen Lin , Chien-Tai Chan , Chia-Pin Lin , Li-Wen Weng , An-Shen Chang , Chung-Cheng Wu
IPC分类号： H01L29/78
CPC分类号： H01L29/7851 , H01L29/66795 , H01L29/7853
摘要： A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon orientation. Example wet etchants are tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).
摘要翻译：晶体管包括覆盖在浅沟槽隔离层下面的切口鳍。可以使用一个或多个凹口，其尺寸可以沿翅片的横向方向变化。在一些实施例中，使用根据硅取向选择性的各向异性湿蚀刻形成凹口。实例湿蚀刻剂是氢氧化四甲基铵（TMAH）或氢氧化钾（KOH）。

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