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1. 发明申请

US20070024251A1 Apparatus and method for continuous conduction mode boost voltage power factor correction with an average current control mode 失效
标题翻译：具有平均电流控制模式的连续导通模式升压电压功率因数校正的装置和方法
公开(公告)号：US20070024251A1
公开(公告)日：2007-02-01
申请号：US11242915
申请日：2005-10-05
申请人： Chung-Cheng Wu , Qin Huang , Ning Zhu , Xin Zhang
发明人： Chung-Cheng Wu , Qin Huang , Ning Zhu , Xin Zhang
IPC分类号： G05F1/00
CPC分类号： G05F1/70
摘要： The continuous conduction mode (CCM) boost voltage power factor correction apparatus with an average-current control mode of the present invention uses resettable integrators to integrate the difference voltage signal outputted from the voltage error amplifier and the input current signal obtained from detection. The integration results are then compared to control the duty cycle of the switch. Thereby, the input current and the input voltage in the AC/DC electrical power converter have a proportion relation and their phases are the same as each other. The components used in this control method are simpler than the PFC circuit of the prior art. It is easy to integrate in one chip with fewer pins. The apparatus of the present invention has a high power factor and a low total harmonic distortion (THD).
摘要翻译：具有本发明的平均电流控制模式的连续导通模式（CCM）升压电压功率因数校正装置使用可复位积分器来积分从电压误差放大器输出的差分电压信号和从检测获得的输入电流信号。然后将积分结果进行比较，以控制开关的占空比。因此，AC / DC电力转换器的输入电流和输入电压具有比例关系，它们的相位彼此相同。在该控制方法中使用的部件比现有技术的PFC电路简单。在一个芯片中集成更少的引脚很容易。本发明的装置具有高功率因数和低总谐波失真（THD）。

2. 发明授权

US07256569B2 Apparatus and method for continuous conduction mode boost voltage power factor correction with an average current control mode 失效
公开(公告)号：US07256569B2
公开(公告)日：2007-08-14
申请号：US11242915
申请日：2005-10-05
申请人： Chung-Cheng Wu , Qin Huang , Ning Zhu , Xin Zhang
发明人： Chung-Cheng Wu , Qin Huang , Ning Zhu , Xin Zhang
IPC分类号： G05F1/10 , G05F1/40 , H02H7/00
CPC分类号： G05F1/70
摘要： The continuous conduction mode (CCM) boost voltage power factor correction apparatus with an average-current control mode of the present invention uses resettable integrators to integrate the difference voltage signal outputted from the voltage error amplifier and the input current signal obtained from detection. The integration results are then compared to control the duty cycle of the switch. Thereby, the input current and the input voltage in the AC/DC electrical power converter have a proportion relation and their phases are the same as each other. The components used in this control method are simpler than the PFC circuit of the prior art. It is easy to integrate in one chip with fewer pins. The apparatus of the present invention has a high power factor and a low total harmonic distortion (THD).

3. 发明授权

US07109692B1 High-speed PWM control apparatus for power converters with adaptive voltage position and its driving signal generating method 失效
标题翻译：具有自适应电压位置的电源转换器的高速PWM控制装置及其驱动信号生成方法
公开(公告)号：US07109692B1
公开(公告)日：2006-09-19
申请号：US11286321
申请日：2005-11-25
申请人： Chung-Cheng Wu , Qin Huang , Xiao-Ming Duan
发明人： Chung-Cheng Wu , Qin Huang , Xiao-Ming Duan
IPC分类号： G05F1/40
CPC分类号： H02M3/157 , H02M1/44 , H02M3/1563
摘要： A high-speed PWM control apparatus with adaptive voltage position and a driving signal generating method thereof is provided. The present invention automatically detects a change in the loading and adjusts the voltage position instantaneously for stabilizing the voltage and reducing the loading output power consumption. The present invention does not require a clock signal to generate a driving signal and does not require an error amplifier to control the modulation. Therefore, the present invention has a fast transient response that responds to the change of the loading instantaneously and has a stabilizing effect. When the apparatus is on a continuous conduction mode (CCM), the switching frequency of the controller is still fixed even though the input voltage Vin and the output voltage Vout are changed. The electrical-magnetic noise disturbance is improved.
摘要翻译：提供一种具有自适应电压位置的高速PWM控制装置及其驱动信号产生方法。本发明自动检测负载变化并且瞬时调节电压位置以稳定电压并降低负载输出功率消耗。本发明不需要时钟信号来产生驱动信号，并且不需要误差放大器来控制调制。因此，本发明具有快速瞬时响应，其瞬时响应负载变化并且具有稳定效果。当设备处于连续导通模式（CCM）时，即使输入电压Vin和输出电压Vout改变，控制器的开关频率仍然是固定的。电磁噪声干扰得到改善。

4. 发明申请

US20060279350A1 System and method for power management with scalable channel voltage regulation 审中-公开
标题翻译：具有可扩展通道电压调节功能管理的系统和方法
公开(公告)号：US20060279350A1
公开(公告)日：2006-12-14
申请号：US11431103
申请日：2006-05-10
申请人： Xin Zhang , Qin Huang
发明人： Xin Zhang , Qin Huang
IPC分类号： H03K17/00
CPC分类号： G06F1/26 , H02J1/102 , H02M3/1584 , H02M2003/1586
摘要： An integrated circuit power device includes a monolithic voltage regulator channel for providing low voltage high current output. The devices can be installed in parallel without a master control IC and without limitations on the number of channels to support CPU power, or can be used alone to support regular Point of Load. Novel and effective control scheme and analog circuits are provided to implement the device, including a distributed current sharing and adaptive voltage position scheme, an automatic interleaving scheme with self-adjusted carrier generator, and a novel current sensing scheme with an accurate transconductance amplifier.
摘要翻译：集成电路功率器件包括用于提供低电压大电流输出的单片电压调节器通道。这些设备可以并行安装，不需要主控制IC，并且不限制支持CPU电源的通道数量，也可以单独使用以支持常规负载点。提供新颖有效的控制方案和模拟电路来实现该器件，包括分布式电流共享和自适应电压位置方案，具有自调整载波发生器的自动交织方案，以及具有精确跨导放大器的新型电流检测方案。

5. 发明授权

US06630711B2 Semiconductor structures with trench contacts 有权
公开(公告)号：US06630711B2
公开(公告)日：2003-10-07
申请号：US10187560
申请日：2002-07-02
申请人： Qin Huang
发明人： Qin Huang
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/41716 , H01L29/41766 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397 , H01L29/7813
摘要： Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.

6. 发明授权

US06437399B1 Semiconductor structures with trench contacts 有权
标题翻译：具有沟槽触点的半导体结构
公开(公告)号：US06437399B1
公开(公告)日：2002-08-20
申请号：US09498476
申请日：2000-02-04
申请人： Qin Huang
发明人： Qin Huang
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/41716 , H01L29/41766 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397 , H01L29/7813
摘要： Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.
摘要翻译：半导体结构如沟槽和平面MOSFET（UMOS），沟槽和平面IGBT以及使用沟槽建立导体的沟道MCT。还实现了对沟槽MOSFET中的寄生晶体管的改进的控制，并且相对于传统结构，单元尺寸和间距减小。

7. 发明授权

US6037628A Semiconductor structures with trench contacts 失效
公开(公告)号：US6037628A
公开(公告)日：2000-03-14
申请号：US885922
申请日：1997-06-30
申请人： Qin Huang
发明人： Qin Huang
IPC分类号： H01L21/331 , H01L21/336 , H01L29/417 , H01L29/739 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7813 , H01L29/41716 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397 , H01L29/7802 , H01L29/41766
摘要： Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.

8. 发明授权

US09163214B2 Method for culturing stem cells 有权
标题翻译：培养干细胞的方法
公开(公告)号：US09163214B2
公开(公告)日：2015-10-20
申请号：US13379651
申请日：2010-05-04
申请人： Dongmei Lai , Weiwei Cheng , Lihe Guo , Tianjin Liu , Lizhen Jiang , Qin Huang
发明人： Dongmei Lai , Weiwei Cheng , Lihe Guo , Tianjin Liu , Lizhen Jiang , Qin Huang
IPC分类号： C12N5/0735 , C12N5/074 , C12N5/095
CPC分类号： C12N5/0606 , C12N5/0607 , C12N2501/115 , C12N2501/235 , C12N2502/025
摘要： In the field of biological technology, a stem cell culture method is provided. The method includes preparing an amniotic epithelial cell feeder layer that is not treated to lose the division ability; and seeding the stem cells onto the amniotic epithelial cell feeder layer, and culturing in a culture medium. The stem cell culture method according to the present invention does not require the treatment of the feeder layer cells to lose the division ability, and is thus simple and safe, thereby effectively solving the problem of contamination caused by animal-derived ingredients in culture of human stem cells at present, greatly reducing the culture cost of the stem cells, and providing a safe, effective, and inexpensive stem cell culture method for the industrialization of the stem cells in the future.
摘要翻译：在生物技术领域，提供了干细胞培养方法。该方法包括制备未被处理以丧失分裂能力的羊膜上皮细胞饲养层; 并将干细胞接种到羊膜上皮细胞饲养层上，并在培养基中培养。根据本发明的干细胞培养方法不需要对饲养层细胞的处理以失去分裂能力，因此简单安全，从而有效地解决了动物来源的成分在人类培养中引起的污染问题目前干细胞大大降低了干细胞的培养成本，为将来干细胞工业化提供了一种安全，有效，廉价的干细胞培养方法。

9. 发明授权

US08823098B2 Structures for power transistor and methods of manufacture 有权
标题翻译：功率晶体管和制造方法的结构
公开(公告)号：US08823098B2
公开(公告)日：2014-09-02
申请号：US13414292
申请日：2012-03-07
申请人： Qin Huang , Yuming Bai
发明人： Qin Huang , Yuming Bai
IPC分类号： H01L29/66 , H01L27/088 , H01L29/788 , H01L29/78 , H01L29/423 , H01L29/739 , H01L29/10 , H01L29/08 , H01L29/417
CPC分类号： H01L29/7802 , H01L29/0834 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/42376 , H01L29/66727 , H01L29/7396
摘要： The invention discloses a manufacture method and structure of a power transistor, comprising a lower electrode, a substrate, a drift region, two first conductive regions, two second conductive regions, two gate units, an isolation structure and an upper electrode. The two second conductive region are between the two first conductive regions and the drift region; the two gate units are on the two second conductive regions; the isolation structure covers the two gate units; the upper electrode covers the isolation structure and connects to the two first conductive regions and the two second conductive regions electrically. When the substrate is of the first conductive type, the structure can be used as MOSFET. When the substrate is of the second conductive type, the structure can be used as IGBT. This structure has a small gate electrode area, which leads to less Qg, Qgd and Rdson and improves device performance.
摘要翻译：本发明公开了一种功率晶体管的制造方法和结构，包括下电极，衬底，漂移区，两个第一导电区，两个第二导电区，两个栅极单元，隔离结构和上电极。两个第二导电区域在两个第一导电区域和漂移区域之间; 两个栅极单元在两个第二导电区域上; 隔离结构覆盖两个门单元; 上电极覆盖隔离结构并且电连接到两个第一导电区域和两个第二导电区域。当衬底是第一导电类型时，该结构可以用作MOSFET。当基板是第二导电类型时，该结构可以用作IGBT。该结构具有较小的栅电极面积，导致Qg，Qgd和Rdson较少，提高器件性能。

10. 发明授权

US06952335B2 Solid-state DC circuit breaker 失效
标题翻译：固态直流断路器
公开(公告)号：US06952335B2
公开(公告)日：2005-10-04
申请号：US10390712
申请日：2003-03-19
申请人： Qin Huang , Xigen Zhou , Zhenxue Xu
发明人： Qin Huang , Xigen Zhou , Zhenxue Xu
IPC分类号： H02H3/087 , H03K17/0814 , H02H3/00
CPC分类号： H02H3/087 , H03K17/08148
摘要： A high-speed, solid-state circuit breaker is capable of interrupting high DC currents without generating an arc, and it is maintenance-free. Both the switch and the tripping unit are solid-state, which meet precise protection requirements. The high-speed, solid-state DC circuit breaker uses an emitter turn-off (ETO) thyristor as the switch. The ETO thyristor has an anode, a cathode and first, second and third gate electrodes. The anode is connectable to a source of DC current, and the cathode is connectable to a load. A solid-state trip circuit is connected to the first, second and third gate electrodes for controlling interrpution of DC current to the load by turning off said ETO thyristor.
摘要翻译：高速固态断路器能够在不产生电弧的情况下中断高直流电流，而且无需维护。开关和脱扣单元均为固态，符合精确的保护要求。高速固态直流断路器使用发射极关断（ETO）晶闸管作为开关。 ETO晶闸管具有阳极，阴极和第一，第二和第三栅电极。阳极可连接到直流电源，阴极可连接到负载。固态跳闸电路连接到第一，第二和第三栅电极，用于通过关断所述ETO晶闸管来控制到负载的直流电流的间断。

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