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1. 发明申请

US20060252190A1 METHOD OF MANUFACTURING SPACER 有权
标题翻译：制造间隔的方法
公开(公告)号：US20060252190A1
公开(公告)日：2006-11-09
申请号：US10908240
申请日：2005-05-04
申请人： Chun-Jen Weng , Chia-Jui Liu
发明人： Chun-Jen Weng , Chia-Jui Liu
IPC分类号： H01L21/8234
CPC分类号： H01L29/6656 , H01L21/31116 , H01L29/7833
摘要： A method of manufacturing a spacer for a substrate having a gate structure formed thereon. The method comprises steps of forming a first oxide layer over the substrate and forming a nitride layer on the first oxide layer. A first asymmetric etching process is performed to remove a portion of the nitride layer until a portion of a top surface of the first oxide layer is exposed. A second asymmetric etching process is performed to remove a portion of the first oxide layer by using the remaining nitride layer as a mask until about 50% to 90% portion of the first oxide layer is removed. A quick wet etching process is performed to remove a portion of the remaining first oxide located on the top of the gate structure and on the substrate.
摘要翻译：一种制造其上形成有栅极结构的衬底的间隔物的方法。该方法包括在衬底上形成第一氧化物层并在第一氧化物层上形成氮化物层的步骤。执行第一非对称蚀刻工艺以去除氮化物层的一部分，直到暴露第一氧化物层的顶表面的一部分。通过使用剩余的氮化物层作为掩模来执行第二非对称蚀刻工艺以去除第一氧化物层的一部分，直到除去第一氧化物层的约50％至90％的部分。执行快速湿蚀刻工艺以去除位于栅极结构的顶部上和衬底上的剩余第一氧化物的一部分。

2. 发明授权

US07235491B2 Method of manufacturing spacer 有权
标题翻译：垫片的制造方法
公开(公告)号：US07235491B2
公开(公告)日：2007-06-26
申请号：US10908240
申请日：2005-05-04
申请人： Chun-Jen Weng , Chia-Jui Liu
发明人： Chun-Jen Weng , Chia-Jui Liu
IPC分类号： H01L21/302
CPC分类号： H01L29/6656 , H01L21/31116 , H01L29/7833
摘要： A method of manufacturing a spacer for a substrate having a gate structure formed thereon. The method comprises steps of forming a first oxide layer over the substrate and forming a nitride layer on the first oxide layer. A first asymmetric etching process is performed to remove a portion of the nitride layer until a portion of a top surface of the first oxide layer is exposed. A second asymmetric etching process is performed to remove a portion of the first oxide layer by using the remaining nitride layer as a mask until about 50% to 90% portion of the first oxide layer is removed. A quick wet etching process is performed to remove a portion of the remaining first oxide located on the top of the gate structure and on the substrate.
摘要翻译：一种制造其上形成有栅极结构的衬底的间隔物的方法。该方法包括在衬底上形成第一氧化物层并在第一氧化物层上形成氮化物层的步骤。执行第一非对称蚀刻工艺以去除氮化物层的一部分，直到暴露第一氧化物层的顶表面的一部分。通过使用剩余的氮化物层作为掩模来执行第二非对称蚀刻工艺以去除第一氧化物层的一部分，直到除去第一氧化物层的约50％至90％的部分。执行快速湿蚀刻工艺以去除位于栅极结构的顶部上和衬底上的剩余第一氧化物的一部分。

3. 发明授权

US06833318B2 Gap-filling process 有权
标题翻译：间隙填充过程
公开(公告)号：US06833318B2
公开(公告)日：2004-12-21
申请号：US10065803
申请日：2002-11-20
申请人： Chun-Jen Weng , Juan-Yi Chen , Hong-Tsz Pan , Cedric Lee , Der-Yuan Wu , Jackson Lin , Yeong-Song Yen , Lawrence Lin , Ying-Chung Tseng
发明人： Chun-Jen Weng , Juan-Yi Chen , Hong-Tsz Pan , Cedric Lee , Der-Yuan Wu , Jackson Lin , Yeong-Song Yen , Lawrence Lin , Ying-Chung Tseng
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/31144
摘要： A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.
摘要翻译：提供间隙填充过程。提供其上具有介电层的基板。电介质层中有一个开口。在电介质层和开口内部形成间隙填充材料层。间隙填充材料的一部分从间隙填充材料层去除以暴露电介质层。进行间隙填充材料层和电介质层的表面的间隙填充材料处理以使间隙填充材料层平坦化，从而在间隙填充材料上形成随后形成的底部抗反射涂层或材料层层可以具有高度的平面度。

4. 发明授权

US08574117B2 Mechanism with component position adjusting function 有权
标题翻译：机构位置调整功能
公开(公告)号：US08574117B2
公开(公告)日：2013-11-05
申请号：US13243345
申请日：2011-09-23
申请人： Shian-Wen Chang , Chun-Jen Weng , Da-Ren Liu
发明人： Shian-Wen Chang , Chun-Jen Weng , Da-Ren Liu
IPC分类号： F16H3/44
CPC分类号： G02B7/005
摘要： This invention discloses a mechanism with a component position adjusting function, comprising a drive unit, a drive shaft, a plate body, a drive wheel, at least one passive component and a brake. The drive unit performs a forward or reverse rotating shift and drives the drive shaft to rotate. The unidirectional component has a through hole, and disposes at the plate body. An end of the drive shaft is passed through the through hole and exposed from the plate body. The drive shaft synchronously drives the plate body and the drive wheel to rotate forward. The passive component is arranged at the plate body and contacted with the drive shaft with synchronously drives and rotates the passive component. The plate body remains still through the rotation of the unidirectional component and the contact of the brake with the plate body.
摘要翻译：本发明公开了一种具有部件位置调整功能的机构，包括驱动单元，驱动轴，板体，驱动轮，至少一个无源部件和制动器。驱动单元执行向前或反向旋转移动并驱动驱动轴旋转。单向元件具有一个通孔，并设置在板体上。驱动轴的端部穿过通孔并从板体露出。驱动轴同步驱动板体和驱动轮向前旋转。被动部件布置在板体上并与驱动轴接触，同步驱动并旋转被动部件。板体通过单向部件的旋转和制动器与板体的接触保持静止。

5. 发明授权

US06600651B1 Package with high heat dissipation 有权
标题翻译：封装散热性好
公开(公告)号：US06600651B1
公开(公告)日：2003-07-29
申请号：US09874153
申请日：2001-06-05
申请人： Chun-Jen Weng
发明人： Chun-Jen Weng
IPC分类号： H05K720
CPC分类号： H01L23/427 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00012
摘要： A package with high heat dissipation, comprising a carrier and a chip located thereon, with electric connection between the chip to the carrier. A molding compound is used to encapsulate the chip, part of the carrier, and the connection between the chip and the carrier. A heat pipe is provided such that one end thereof is embedded in the molding compound, is close to the active surface of the chip and is substantially normal to the chip, and the other end thereof is extended outside of the molding compound.
摘要翻译：具有高散热性的封装，包括位于其上的载体和芯片，在芯片与载体之间具有电连接。使用模制化合物来封装芯片，载体的一部分以及芯片和载体之间的连接。设置热管，使得其一端嵌入模塑料中，靠近芯片的活性表面，并且基本上垂直于芯片，并且其另一端延伸到模塑料的外部。

6. 发明申请

US20130045830A1 MECHANISM WITH COMPONENT POSITION ADJUSTING FUNCTION 有权
标题翻译：具有组件位置调节功能的机制
公开(公告)号：US20130045830A1
公开(公告)日：2013-02-21
申请号：US13243345
申请日：2011-09-23
申请人： Shian-Wen CHANG , Chun-Jen Weng , Da-Ren Liu
发明人： Shian-Wen CHANG , Chun-Jen Weng , Da-Ren Liu
IPC分类号： F16H1/28
CPC分类号： G02B7/005
摘要： This invention discloses a mechanism with a component position adjusting function, comprising a drive unit, a drive shaft, a plate body, a drive wheel, at least one passive component and a brake. The drive unit performs a forward or reverse rotating shift and drives the drive shaft to rotate. The unidirectional component has a through hole, and disposes at the plate body. An end of the drive shaft is passed through the through hole and exposed from the plate body. The drive shaft synchronously drives the plate body and the drive wheel to rotate forward. The passive component is arranged at the plate body and contacted with the drive shaft with synchronously drives and rotates the passive component. The plate body remains still through the rotation of the unidirectional component and the contact of the brake with the plate body.
摘要翻译：本发明公开了一种具有部件位置调整功能的机构，包括驱动单元，驱动轴，板体，驱动轮，至少一个无源部件和制动器。驱动单元执行向前或反向旋转移动并驱动驱动轴旋转。单向元件具有一个通孔，并设置在板体上。驱动轴的端部穿过通孔并从板体露出。驱动轴同步驱动板体和驱动轮向前旋转。被动部件布置在板体上并与驱动轴接触，同步驱动并旋转被动部件。板体通过单向部件的旋转和制动器与板体的接触保持静止。

7. 发明授权

US07189640B2 Method of forming damascene structures 有权
标题翻译：形成镶嵌结构的方法
公开(公告)号：US07189640B2
公开(公告)日：2007-03-13
申请号：US10904877
申请日：2004-12-02
申请人： Chun-Jen Weng , Yu-Shiang Lin , Chih-Yi Cheng
发明人： Chun-Jen Weng , Yu-Shiang Lin , Chih-Yi Cheng
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76832
摘要： A method of forming damascene structures. A substrate including a dielectric layer thereon is provided. The dielectric layer has a plurality of via holes. A gap filler is formed into each via hole. Subsequently, a first anti-reflective coating (ARC) film and a second ARC film are consecutively formed on the dielectric layer. A photoresist pattern for defining a trench pattern is formed on the second ARC film. Following that, an etching process is performed to remove an upper part of the dielectric layer left uncovered by the photoresist pattern to form a plurality of trenches.
摘要翻译：一种形成镶嵌结构的方法。提供了包括其上的介电层的基板。电介质层具有多个通孔。在每个通孔中形成间隙填料。随后，在电介质层上连续地形成第一抗反射涂层（ARC）膜和第二ARC膜。在第二ARC膜上形成用于限定沟槽图案的光致抗蚀剂图案。之后，进行蚀刻处理以去除由光致抗蚀剂图案未覆盖的电介质层的上部以形成多个沟槽。

8. 发明申请

US20060121730A1 METHOD OF FORMING DAMASCENE STRUCTURES 有权
标题翻译：形成大气结构的方法
公开(公告)号：US20060121730A1
公开(公告)日：2006-06-08
申请号：US10904877
申请日：2004-12-02
申请人： Chun-Jen Weng , Yu-Shiang Lin , Chih-Yi Cheng
发明人： Chun-Jen Weng , Yu-Shiang Lin , Chih-Yi Cheng
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76832
摘要： A substrate including a dielectric layer thereon is provided. The dielectric layer has a plurality of via holes. A gap filler is formed into each via hole. Subsequently, a first anti-reflective coating (ARC) film and a second ARC film are consecutively formed on the dielectric layer. A photoresist pattern for defining a trench pattern is formed on the second ARC film. Following that, an etching process is performed to remove an upper part of the dielectric layer left uncovered by the photoresist pattern to form a plurality of trenches.
摘要翻译：提供了包括其上的介电层的基板。电介质层具有多个通孔。在每个通孔中形成间隙填料。随后，在电介质层上连续地形成第一抗反射涂层（ARC）膜和第二ARC膜。在第二ARC膜上形成用于限定沟槽图案的光致抗蚀剂图案。之后，进行蚀刻处理以去除由光致抗蚀剂图案未覆盖的电介质层的上部以形成多个沟槽。

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