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1. 发明授权

US08677173B2 Method and circuit for trimming an internal oscillator of a USB device 有权
标题翻译：用于修整USB设备内部振荡器的方法和电路
公开(公告)号：US08677173B2
公开(公告)日：2014-03-18
申请号：US12792015
申请日：2010-06-02
申请人： Chun-Chi Wang , Tsung-Yin Chiang , Ching-Shun Lin
发明人： Chun-Chi Wang , Tsung-Yin Chiang , Ching-Shun Lin
IPC分类号： G06F1/00 , G06F1/12 , H04L25/64
CPC分类号： H04L7/0331 , H03L7/07 , H03L7/0807 , H03L7/085 , H04L7/046
摘要： A circuit for trimming an internal oscillator of a USB device that generates a clock signal as a frequency source of the USB device includes a counter, a first detector for detecting an end of packet from an input data stream to initialize a counter, a second detector for detecting a synchronization sequence, a token packet or a handshake packet in the data stream for the counter to carry out clock counting on the clock signal, and a trimming code controller for comparing the count value with a reference value to determine a trimming code for trimming a clock frequency of the internal oscillator.
摘要翻译：用于修整产生作为USB设备的频率源的时钟信号的USB设备的内部振荡器的电路包括计数器，用于从输入数据流检测分组结束以初始化计数器的第一检测器，第二检测器用于检测用于计数器的数据流中的同步序列，令牌分组或握手分组，以对时钟信号执行时钟计数;以及修整代码控制器，用于将计数值与参考值进行比较，以确定修整代码调整内部振荡器的时钟频率。

2. 发明授权

US6090725A Method for preventing bubble defects in BPSG film 失效
标题翻译：防止BPSG膜气泡缺陷的方法
公开(公告)号：US6090725A
公开(公告)日：2000-07-18
申请号：US385382
申请日：1999-08-30
申请人： Yi-Chuan Yang , Ching-Shun Lin , Mike W. J Sue , Chih-Ta Wu
发明人： Yi-Chuan Yang , Ching-Shun Lin , Mike W. J Sue , Chih-Ta Wu
IPC分类号： C23C16/40 , C23C16/44 , H01L21/316 , H01L21/302
CPC分类号： C23C16/4408 , C23C16/401 , H01L21/02129 , H01L21/02271 , H01L21/31625
摘要： A method for preventing bubble defects in borophosphosilicate glass (BPSG) film is provided. A wafer for depositing borophosphosilicate glass (BPSG) film is loaded in deposition chamber. After the wafer is properly positioned, the wafer is heated to a predetermined temperature. A process gas is introduced from the gas distribution system to the deposition chamber. A selected pressure of the deposition chamber is set and maintained throughout deposition process. After deposition of the BPSG film, the wafer is loaded out the chamber. Subsequently, helium gas is introduced to purge the liquid injection valve and delivery path. After pumping out the purge gas, the another wafer is then loaded in the chamber for depositing BPSG film.
摘要翻译：提供了一种防止硼磷硅酸盐玻璃（BPSG）膜中气泡缺陷的方法。用于沉积硼磷硅酸盐玻璃（BPSG）膜的晶片装载在沉积室中。在晶片正确定位之后，将晶片加热到预定温度。处理气体从气体分配系统引入沉积室。在整个沉积过程中设置和保持沉积室的选定压力。在沉积BPSG膜之后，将晶片装入室中。随后，引入氦气以吹扫液体喷射阀和输送路径。在抽出吹扫气体之后，然后将另一个晶片装入室中用于沉积BPSG膜。

3. 发明授权

US06265269B1 Method for fabricating a concave bottom oxide in a trench 有权
标题翻译：在沟槽中制造凹底氧化物的方法
公开(公告)号：US06265269B1
公开(公告)日：2001-07-24
申请号：US09369266
申请日：1999-08-06
申请人： Chien-Hung Chen , Chih-Ta Wu , Ching-Shun Lin , Juinn-Sheng Chen
发明人： Chien-Hung Chen , Chih-Ta Wu , Ching-Shun Lin , Juinn-Sheng Chen
IPC分类号： H01L21336
CPC分类号： H01L29/42368 , H01L29/7813
摘要： A method for forming a concave bottom oxide layer in a trench, comprising: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a silicon nitride layer on the pad oxide layer; etching the silicon nitride layer, the pad oxide layer and the semiconductor substrate to form the trench in the semiconductor substrate; depositing a silicon oxide layer to refill into the trench and cover on the silicon nitride layer, wherein the silicon oxide layer has overhang portions at corners of the trench; anisotropically etching the silicon oxide layer to form a concave bottom oxide layer in the trench; etching the silicon oxide layer to remove the silicon oxide layer on the silicon nitride layer and the sidewalls of the trench; removing the silicon nitride layer and the pad oxide layer.
摘要翻译：一种在沟槽中形成凹底部氧化物层的方法，包括：提供半导体衬底; 在所述半导体衬底上形成衬垫氧化物层; 在所述焊盘氧化物层上形成氮化硅层; 蚀刻氮化硅层，焊盘氧化物层和半导体衬底，以在半导体衬底中形成沟槽; 沉积硅氧化物层以重新填充到沟槽中并覆盖在氮化硅层上，其中氧化硅层在沟槽的拐角处具有突出部分; 各向异性地蚀刻氧化硅层以在沟槽中形成凹的底部氧化物层; 蚀刻氧化硅层以除去氮化硅层和沟槽的侧壁上的氧化硅层; 去除氮化硅层和衬垫氧化物层。

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