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1. 发明授权

US07015112B2 Method of forming bottom oxide layer in trench structure 有权
标题翻译：在沟槽结构中形成底部氧化物层的方法
公开(公告)号：US07015112B2
公开(公告)日：2006-03-21
申请号：US10668454
申请日：2003-09-22
申请人： Ta-Chung Wu , Yi-Chuan Yang , Shih-Chi Lai , Yew-Jung Chang
发明人： Ta-Chung Wu , Yi-Chuan Yang , Shih-Chi Lai , Yew-Jung Chang
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L29/42368 , H01L29/7813
摘要： Embodiments of the invention are directed to a method of forming a bottom oxide in a trench structure. In one embodiment, the method includes steps of providing a semiconductor substrate and forming a trench structure in the semiconductor substrate; performing an PECVD process with TEOS as a source to deposit an oxide layer on the bottom and sidewall of the trench structure and the semiconductor substrate; and removing the oxide layer on the sidewall of the trench structure substantially completely and the oxide layer on the bottom of the trench structure partially to define the remained oxide layer as the bottom oxide layer.
摘要翻译：本发明的实施例涉及在沟槽结构中形成底部氧化物的方法。在一个实施例中，该方法包括以下步骤：提供半导体衬底并在半导体衬底中形成沟槽结构; 以TEOS作为源进行PECVD处理，以在沟槽结构和半导体衬底的底部和侧壁上沉积氧化物层; 并且基本上完全去除沟槽结构的侧壁上的氧化物层，并且部分地去除沟槽结构的底部上的氧化物层以限定作为底部氧化物层的剩余氧化物层。

2. 发明授权

US06974749B2 Bottom oxide formation process for preventing formation of voids in trench 有权
标题翻译：用于防止在沟槽中形成空隙的底部氧化物形成工艺
公开(公告)号：US06974749B2
公开(公告)日：2005-12-13
申请号：US10677568
申请日：2003-10-01
申请人： Shih-Chi Lai , Yifu Chung , Yi-Chuan Yang , Jen-Chieh Chang , Jason Chien-Sung Chu , Chun-De Lin
发明人： Shih-Chi Lai , Yifu Chung , Yi-Chuan Yang , Jen-Chieh Chang , Jason Chien-Sung Chu , Chun-De Lin
IPC分类号： H01L21/762 , H01L21/763 , H01L21/336
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/42368 , H01L29/66734
摘要： Embodiments of the present invention are directed to a method of forming a bottom oxide layer in the trench in semiconductor devices, such as Double-Diffused Metal-Oxide Semiconductor (DMOS) devices. In one embodiment, a method of forming a bottom oxide layer in a trench structure comprises providing a semiconductor substrate; forming a silicon nitride layer on the semiconductor substrate; forming a first oxide layer on the silicon nitride layer; forming a trench structure in the semiconductor substrate; forming a second oxide layer on a bottom and sidewalls of the trench and on a surface of the first oxide layer; removing the first oxide layer and the second oxide layer on the surface of the silicon nitride layer; and removing the second oxide layer on the sidewalls of the trench and a portion of the second oxide layer on the bottom of the trench.
摘要翻译：本发明的实施例涉及在诸如双扩散金属氧化物半导体（DMOS）器件的半导体器件中的沟槽中形成底部氧化物层的方法。在一个实施例中，在沟槽结构中形成底部氧化物层的方法包括提供半导体衬底; 在所述半导体衬底上形成氮化硅层; 在所述氮化硅层上形成第一氧化物层; 在所述半导体衬底中形成沟槽结构; 在所述沟槽的底部和侧壁上以及所述第一氧化物层的表面上形成第二氧化物层; 去除氮化硅层表面上的第一氧化物层和第二氧化物层; 并且去除沟槽的侧壁上的第二氧化物层和沟槽底部上的第二氧化物层的一部分。

3. 发明授权

US6090725A Method for preventing bubble defects in BPSG film 失效
标题翻译：防止BPSG膜气泡缺陷的方法
公开(公告)号：US6090725A
公开(公告)日：2000-07-18
申请号：US385382
申请日：1999-08-30
申请人： Yi-Chuan Yang , Ching-Shun Lin , Mike W. J Sue , Chih-Ta Wu
发明人： Yi-Chuan Yang , Ching-Shun Lin , Mike W. J Sue , Chih-Ta Wu
IPC分类号： C23C16/40 , C23C16/44 , H01L21/316 , H01L21/302
CPC分类号： C23C16/4408 , C23C16/401 , H01L21/02129 , H01L21/02271 , H01L21/31625
摘要： A method for preventing bubble defects in borophosphosilicate glass (BPSG) film is provided. A wafer for depositing borophosphosilicate glass (BPSG) film is loaded in deposition chamber. After the wafer is properly positioned, the wafer is heated to a predetermined temperature. A process gas is introduced from the gas distribution system to the deposition chamber. A selected pressure of the deposition chamber is set and maintained throughout deposition process. After deposition of the BPSG film, the wafer is loaded out the chamber. Subsequently, helium gas is introduced to purge the liquid injection valve and delivery path. After pumping out the purge gas, the another wafer is then loaded in the chamber for depositing BPSG film.
摘要翻译：提供了一种防止硼磷硅酸盐玻璃（BPSG）膜中气泡缺陷的方法。用于沉积硼磷硅酸盐玻璃（BPSG）膜的晶片装载在沉积室中。在晶片正确定位之后，将晶片加热到预定温度。处理气体从气体分配系统引入沉积室。在整个沉积过程中设置和保持沉积室的选定压力。在沉积BPSG膜之后，将晶片装入室中。随后，引入氦气以吹扫液体喷射阀和输送路径。在抽出吹扫气体之后，然后将另一个晶片装入室中用于沉积BPSG膜。

4. 发明申请

US20070136572A1 Encrypting system to protect digital data and method thereof 审中-公开
标题翻译：加密系统保护数字数据及其方法
公开(公告)号：US20070136572A1
公开(公告)日：2007-06-14
申请号：US11417112
申请日：2006-05-04
申请人： Yen-Fu Chen , Shiuan-Sz Wang , Yi-Chuan Yang , Kuo-Tien Lee
发明人： Yen-Fu Chen , Shiuan-Sz Wang , Yi-Chuan Yang , Kuo-Tien Lee
IPC分类号： H04L9/00
CPC分类号： H04L9/0822 , H04L63/0428 , H04L2209/603
摘要： An encrypting system to protect digital data and a method thereof are disclosed. During dispatching files to receivers, a compiler is used to add a file key on out-going file to form the first encrypted electronic text and to retrieve file abstract, and then the first encrypted electronic text is encrypted again with a public key to form the second encrypted electronic text which is stored into a database of a server. The file abstract as well as the file key is also encrypted by the public key before being sent to the receivers. The receivers then decrypt the encrypted file by the public key to obtain the original file abstract with which the receivers get the download permission from the server to download the second encrypted electronic text. The receivers then download and decrypt the second encrypted electronic text by the public key into the first encrypted electronic text which is then opened by the compiler by means of the file key to meet the purpose of protecting digital data.
摘要翻译：公开了一种保护数字数据的加密系统及其方法。在将文件分发到接收者期间，编译器用于在外出文件上添加文件密钥，形成第一个加密的电子文本，并检索文件摘要，然后用公钥再次加密第一个加密的电子文本，形成存储在服务器的数据库中的第二加密电子文本。在发送给接收者之前，文件摘要以及文件密钥也被公钥加密。接收者然后通过公开密钥对加密文件进行解密，以获得原始文件摘要，接收者从服务器获得下载许可证以下载第二加密电子文本。然后，接收者然后通过公钥将第二加密电子文本下载并解密为第一加密电子文本，然后由编译器通过文件密钥打开该文本，以达到保护数字数据的目的。

5. 发明授权

US06326320B1 Method for forming oxide layer on conductor plug of trench structure 有权
标题翻译：在沟槽结构的导体塞上形成氧化物层的方法
公开(公告)号：US06326320B1
公开(公告)日：2001-12-04
申请号：US09655042
申请日：2000-09-05
申请人： Yi-Chuan Yang , Jason Chien-Song Chu , Mike Wen-Jeh Su
发明人： Yi-Chuan Yang , Jason Chien-Song Chu , Mike Wen-Jeh Su
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02274 , H01L21/31612 , H01L21/763
摘要： A method for forming oxide layer on conductor plug of trench structure is proposed. The invention includes following essential steps: First, provide a substrate where a trench locates inside the substrate, herein the trench is partly filled by a conductor plug. Second, forms a plasma enhanced tetraethyl-orthosilicate layer on the substrate, herein the plasma enhanced tetraethyl-orthosilicate layer also fills the trench and covers the conductor plug. Finally, removes the plasma enhanced tetraethyl-orthosilicate layer until the substrate is not covered by the plasma enhanced tetraethyl-orthosilicate layer, herein the conductor plug still is covered by the plasma enhanced tetraethyl-orthosilicate layer. Additional, advantages of application of plasma enhanced tetraethyl-orthosilicate layer comprise compacted structure and high deposit rate.
摘要翻译：提出了一种在沟槽结构的导体插塞上形成氧化层的方法。本发明包括以下基本步骤：首先，提供衬底，其中沟槽位于衬底内，这里沟槽部分地由导体插头填充。其次，在衬底上形成等离子体增强的四乙基原硅酸盐层，这里等离子体增强的四乙基原硅酸盐层还填充沟槽并覆盖导体插塞。最后，除去等离子体增强的四乙基原硅酸盐层，直到基板未被等离子体增强的四乙基原硅酸盐层覆盖，这里导体塞仍被等离子体增强的四乙基原硅酸盐层覆盖。另外，应用等离子体增强的四乙基 - 原硅酸盐层的优点包括压实结构和高沉积速率。

6. 发明授权

US06261893B1 Method for forming a magnetic layer of magnetic random access memory 有权
标题翻译：磁性随机存取存储器磁层形成方法
公开(公告)号：US06261893B1
公开(公告)日：2001-07-17
申请号：US09686932
申请日：2000-10-12
申请人： Yen-Jung Chang , Yi-Chuan Yang , Jun-Jei Huang , Mo-Chung Tseng
发明人： Yen-Jung Chang , Yi-Chuan Yang , Jun-Jei Huang , Mo-Chung Tseng
IPC分类号： H01L218242
CPC分类号： H01L27/222 , B82Y10/00
摘要： The present invention relates to a method for forming a magnetic layer of magnetic random access memory. In short, the method comprises following steps: providing a substrate; forming metal structures on substrate; forming a stop layer on substrate and mostly conformally covers metal structures; forming a buffer layer which mostly conformally covers stop layer; forming a dielectric layer on buffer layer where thickness of dielectric layer is larger than height of metal structures; planarizing the surface of said dielectric layer; and forming a magnetic layer on dielectric layer. Moreover, some essential key-points of the method are dielectric layer is more sensitive to said stop layer than buffer layer and gap fill ability of dielectric layer is better than gap fill ability of buffer layer.
摘要翻译：本发明涉及磁性随机存取存储器的磁性层形成方法。简而言之，该方法包括以下步骤：提供衬底; 在基底上形成金属结构; 在基材上形成停留层，大部分保形覆盖金属结构; 形成大致保守地覆盖停止层的缓冲层; 在介质层厚度大于金属结构高度的缓冲层上形成介电层; 平坦化所述介电层的表面; 并在电介质层上形成磁性层。此外，该方法的一些基本关键点是介电层比缓冲层对所述停止层更敏感，并且介电层的间隙填充能力优于缓冲层的间隙填充能力。

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