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2. 发明授权

US4035276A Making coplanar layers of thin films 失效
标题翻译：制作共面层薄膜
公开(公告)号：US4035276A
公开(公告)日：1977-07-12
申请号：US681380
申请日：1976-04-29
申请人： Janos Havas , John S. Lechaton , Joseph Skinner Logan
发明人： Janos Havas , John S. Lechaton , Joseph Skinner Logan
IPC分类号： H05K3/46 , H01L21/027 , H01L21/28 , H01L21/306 , H01L21/312 , H01L21/3205 , H01L21/768 , H01L21/84 , H01L23/522 , H05K3/14 , C23C15/00
CPC分类号： H01L21/768 , H01L21/0272 , H01L21/312 , H01L21/7688 , H01L21/76885 , H01L21/84 , H01L23/522 , H01L2924/0002 , H05K3/143 , Y10S438/951 , Y10T428/24777
摘要： A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films.In the preferred embodiment, the first thin film is a conductor and the RF sputtered second thin film is an insulator such as glass. Alternatively, the first thin film could be the insulator with the RF sputtered second film being the conductor, or both thin films could be dissimilar metals or insulators. Via hole studs, or feedthroughs, which are metallic interconnections between a first level conductive pattern (metallization) and a second level conductive pattern, may be formed by repeating substantially the same steps atop the first conductive pattern at desired locations. As many substantially coplanar levels as desired may be formed without the need for etching the second thin film.
摘要翻译：在基板上形成共面薄膜，特别是导体 - 绝缘体图案的方法。在基板上形成包括第一薄膜和沉积在其上的消耗材料的图案。选择消耗材料，使得其可以通过不侵蚀第一薄膜的蚀刻剂或要沉积的绝缘体来选择性地去除。通过RF溅射以足够高的偏压沉积第二薄膜以引起第二膜的显着再次释放。这导致用第二膜覆盖暴露的基板表面和材料的上表面，但是使材料的侧表面暴露。然后对消耗材料进行化学蚀刻，以便剥离沉积在其上的材料和第二膜，由此留下第一和第二薄膜的共面图案。

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