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1. 发明申请

US20070212896A1 METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM 有权
标题翻译：使用低能量等离子体系统制造高介电常数晶体闸门的方法和装置
公开(公告)号：US20070212896A1
公开(公告)日：2007-09-13
申请号：US11683984
申请日：2007-03-08
申请人： Christopher Olsen , Thai Chua , Steven Hung , Patricia Liu , Tatsuya Sato , Alex Paterson , Valentin Todorov , John Holland
发明人： Christopher Olsen , Thai Chua , Steven Hung , Patricia Liu , Tatsuya Sato , Alex Paterson , Valentin Todorov , John Holland
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01J37/32082 , H01J37/32146 , H01L21/02148 , H01L21/02197 , H01L21/02266 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/316 , H01L29/495 , H01L29/4966 , H01L29/513
摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.
摘要翻译：本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。

2. 发明申请

US20070087583A1 METHOD OF FORMING A SILICON OXYNITRIDE LAYER 有权
标题翻译：形成硅氧化层的方法
公开(公告)号：US20070087583A1
公开(公告)日：2007-04-19
申请号：US11612276
申请日：2006-12-18
申请人： CHRISTOPHER OLSEN , Faran Nouri , Thai Chua
发明人： CHRISTOPHER OLSEN , Faran Nouri , Thai Chua
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/51 , H01L29/518
摘要： A SiOxNy gate dielectric and a method for forming a SiOxNy gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure is annealed after it is exposed to a plasma comprising a nitrogen source. In another aspect, a SiOxNy gate dielectric is formed in an integrated processing system by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 in one chamber of the integrated processing system and then exposing the structure to a plasma comprising a nitrogen source in another chamber of the integrated processing system.
摘要翻译：一种SiO 2 / N 2 O 3栅极电介质和通过加热形成SiO 2 / N 2 O 3栅极电介质的方法提供包括在包含NH 3的气氛中的硅衬底上的氧化硅膜的结构，然后将结构暴露于包含氮源的等离子体。在一个方面，该结构在暴露于包含氮源的等离子体之后退火。在另一方面，通过在包含NH的气氛中在硅衬底上加热包括氧化硅膜的结构，在一体化处理系统中形成SiO 2 / N 2 O 3栅极电介质在集成处理系统的一个室中，然后将该结构暴露于包括在该集成处理系统的另一个室中的氮源的等离子体。

3. 发明申请

US20050130448A1 Method of forming a silicon oxynitride layer 审中-公开
标题翻译：形成氮氧化硅层的方法
公开(公告)号：US20050130448A1
公开(公告)日：2005-06-16
申请号：US10736061
申请日：2003-12-15
申请人： Christopher Olsen , Faran Nouri , Thai Chua
发明人： Christopher Olsen , Faran Nouri , Thai Chua
IPC分类号： H01L21/28 , H01L21/314 , H01L29/51 , B28B5/00 , H01L23/58 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/51 , H01L29/518
摘要： A SiOxNy gate dielectric and a method for forming a SiOxNy gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure is annealed after it is exposed to a plasma comprising a nitrogen source. In another aspect, a SiOxNy gate dielectric is formed in an integrated processing system by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 in one chamber of the integrated processing system and then exposing the structure to a plasma comprising a nitrogen source in another chamber of the integrated processing system.
摘要翻译：一种SiO 2 / N 2 O 3栅极电介质和通过加热形成SiO 2 / N 2 O 3栅极电介质的方法提供包括在包含NH 3的气氛中的硅衬底上的氧化硅膜的结构，然后将结构暴露于包含氮源的等离子体。在一个方面，该结构在暴露于包含氮源的等离子体之后退火。在另一方面，通过在包含NH的气氛中在硅衬底上加热包括氧化硅膜的结构，在一体化处理系统中形成SiO 2 / N 2 O 3栅极电介质在集成处理系统的一个室中，然后将该结构暴露于包括在该集成处理系统的另一个室中的氮源的等离子体。

4. 发明申请

US20070093012A1 Method for fabricating a gate dielectric of a field effect transistor 有权
标题翻译：用于制造场效应晶体管的栅极电介质的方法
公开(公告)号：US20070093012A1
公开(公告)日：2007-04-26
申请号：US11255857
申请日：2005-10-20
申请人： Thai Chua , Cory Czarnik , Christopher Olsen , Khaled Ahmed , Philip Kraus
发明人： Thai Chua , Cory Czarnik , Christopher Olsen , Khaled Ahmed , Philip Kraus
IPC分类号： H01L21/8234 , H01L21/336 , H01L21/3205 , H01L21/31
CPC分类号： H01L21/31662 , H01L21/0214 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L21/823857 , H01L29/518 , Y10S438/908
摘要： A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.
摘要翻译：本文公开了一种用于制造场效应晶体管的栅极电介质的方法。在一个实施例中，该方法包括以下步骤：去除自然氧化物层，形成氧化物层，在氧化物层上形成栅极电介质层，氧化栅极电介质层，以及退火层和下面的热氧化物/硅界面。任选地，氧化物层可以在形成栅极电介质层之前被氮化。可选地，栅极电介质层可以在氧化栅极电介质层之前被氮化。在一个实施例中，使用布置在群集工具上的处理反应器来执行该方法的至少一部分。

5. 发明申请

US20070093013A1 METHOD FOR FABRICATING A GATE DIELECTRIC OF A FIELD EFFECT TRANSISTOR 有权
标题翻译：用于制造场效应晶体管的栅极电介质的方法
公开(公告)号：US20070093013A1
公开(公告)日：2007-04-26
申请号：US11381960
申请日：2006-05-05
申请人： Thai Chua , Cory Czarnik , Andreas Hegedus , Christopher Olsen , Khaled Ahmed , Philip Kraus
发明人： Thai Chua , Cory Czarnik , Andreas Hegedus , Christopher Olsen , Khaled Ahmed , Philip Kraus
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/3144 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/02274 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/31662 , H01L21/3185 , H01L21/823857 , H01L29/518
摘要： A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. In one embodiment, at least portions of the method are performed using at least one processing reactor arranged on a cluster tool. In one embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma. In another embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, i.e., depositing the oxide layer on the gate dielectric layer.
摘要翻译：本文公开了一种用于制造场效应晶体管的栅极电介质的方法。在一个实施例中，该方法包括以下步骤：去除自然氧化物层，形成氧化物层，在氧化物层上形成栅极电介质层，在栅极电介质层上形成氧化物层，以及退火层和下面的热氧化物/ 硅接口。任选地，氧化物层可以在形成栅极电介质层之前被氮化。在一个实施例中，使用布置在群集工具上的至少一个处理反应器来执行该方法的至少部分。在一个实施例中，通过沉积氧化物层形成衬底上的氧化物层，并且通过使用含氧等离子体氧化至少一部分栅极电介质层来形成栅极电介质层上的氧化物层。在另一个实施例中，通过沉积氧化物层而形成衬底上的氧化物层，并且通过形成热氧化物层，即将氧化物层沉积在栅极电介质层上，形成栅极电介质层上的氧化物层。

6. 发明申请

US20070010103A1 Nitric oxide reoxidation for improved gate leakage reduction of sion gate dielectrics 审中-公开
标题翻译：一氧化氮再氧化用于改善栅极电介质的栅极泄漏减少
公开(公告)号：US20070010103A1
公开(公告)日：2007-01-11
申请号：US11178749
申请日：2005-07-11
申请人： Thai Chua , Christopher Olsen , Philip Kraus , Khaled Ahmed , Cory Czarnik
发明人： Thai Chua , Christopher Olsen , Philip Kraus , Khaled Ahmed , Cory Czarnik
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/2822 , H01L29/518
摘要： A method of forming a silicon oxynitride gate dielectric. The method includes providing a structure comprising a silicon film formed on a substrate. The structure is exposed to a first plasma comprising a nitrogen source to incorporate nitrogen into the silicon film. The structure is oxidized in an atmosphere comprising nitric oxide to form a silicon oxynitride gate dielectric on the structure. The structure is then exposed to a second plasma comprising a nitrogen source.
摘要翻译：一种形成氮氧化硅栅极电介质的方法。该方法包括提供一种包括形成在基底上的硅膜的结构。该结构暴露于包含氮源的第一等离子体以将氮掺入到硅膜中。该结构在包含一氧化氮的气氛中氧化，以在该结构上形成氮氧化硅栅极电介质。然后将该结构暴露于包含氮源的第二等离子体。

7. 发明申请

US20060216944A1 METHOD AND APPARATUS FOR PLASMA NITRIDATION OF GATE DIELECTRICS USING AMPLITUDE MODULATED RADIO-FREQUENCY ENERGY 有权
标题翻译：使用振幅调制无线电频率进行栅极电介质等离子体氮化的方法和装置
公开(公告)号：US20060216944A1
公开(公告)日：2006-09-28
申请号：US11421163
申请日：2006-05-31
申请人： Philip Kraus , Thai Chua
发明人： Philip Kraus , Thai Chua
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/28202 , H01L21/3144 , H01L29/517 , H01L29/518
摘要： A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor channel mobility and gate leakage current results are improved when the power source is smooth-varying modulated, as compared to square-wave modulated.
摘要翻译：一种用于形成氮化栅极电介质层的方法和装置。该方法包括通过平滑变化的调制RF电源在处理室中产生含氮等离子体，以减少电子温度尖峰。与方波调制相比，当电源平滑变化调制时，场效应晶体管沟道迁移率和栅极漏电流结果得到改善。

8. 发明申请

US20080011426A1 Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support 审中-公开
标题翻译：具有电感耦合源功率施加器和高温加热工件支架的等离子体反应器
公开(公告)号：US20080011426A1
公开(公告)日：2008-01-17
申请号：US11890296
申请日：2007-08-02
申请人： Thai Chua
发明人： Thai Chua
IPC分类号： C23F1/00
CPC分类号： H01L21/02164 , H01J37/321 , H01J2237/2001 , H01L21/02274 , H01L21/0228 , H01L21/31612
摘要： An inductively coupled plasma reactor includes a coil antenna overlying the ceiling and coupled to an RF power source. The reactor further includes gas injection apparatus coupled to a process gas supply that comprises a supply of oxygen gas and a supply of a hydrogen-containing gas. A heated workpiece support in the chamber is configured to operate in a high temperature range including 700 degrees C. or higher.
摘要翻译：电感耦合等离子体反应器包括覆盖天花板并耦合到RF电源的线圈天线。反应器还包括与包括氧气供应和含氢气体供应的工艺气体供应相连的气体注入装置。腔室中加热的工件支撑件被配置为在包括700摄氏度或更高的高温范围内运行。

9. 发明申请

US20060172550A1 Selective plasma re-oxidation process using pulsed RF source power 有权
公开(公告)号：US20060172550A1
公开(公告)日：2006-08-03
申请号：US11050471
申请日：2005-02-02
申请人： Thai Chua
发明人： Thai Chua
IPC分类号： H01L21/8234 , H01L21/31 , H01L21/336
CPC分类号： H01L21/02252 , H01J37/321 , H01L21/0223 , H01L21/28167 , H01L21/28176 , H01L21/31654
摘要： A transistor gate selective re-oxidation process includes the steps of introducing into the vacuum chamber containing the semiconductor substrate a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating layer on the order of several Angstroms in thickness is formed by generating a plasma in a plasma generation region within the vacuum chamber during successive “on” times, and allowing ion energy of the plasma to decay during successive “off” intervals separating the successive “on” intervals, the “on” and “off” intervals defining a controllable duty cycle. During formation of the oxide insulating layer, the duty cycle is limited so as to limit formation of ion bombardment-induced defects in the insulating layer, while the vacuum pressure is limited so as to limit formation of contamination-induced defects in the insulating layer.

10. 发明申请

US20070207624A1 Multiple nitrogen plasma treatments for thin SiON dielectrics 有权
标题翻译：用于薄SiON电介质的多次氮等离子体处理
公开(公告)号：US20070207624A1
公开(公告)日：2007-09-06
申请号：US11367882
申请日：2006-03-02
申请人： Thai Chua
发明人： Thai Chua
IPC分类号： H01L21/31
CPC分类号： H01L21/02323 , H01L21/0214 , H01L21/02247 , H01L21/02252 , H01L21/02337 , H01L21/28202 , H01L21/3144
摘要： A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, exposing the surface of the substrate to a hydrogen-free nitrogen source, and annealing the substrate. A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, including exposing the surface of the substrate to a gas selected from the group of oxygen, nitric oxide, and nitrous oxide, and exposing the surface of the substrate to a hydrogen-free nitrogen source, wherein the hydrogen-free nitrogen source is a gas selected from the group of nitrogen, nitric oxide, and nitrous oxide.
摘要翻译：一种用于沉积包括在衬底的表面上形成氮化硅的电介质膜的方法，在衬底的表面上氧化氮化硅，将衬底的表面暴露于无氢氮源，并对衬底退火。一种用于沉积包括在衬底的表面上形成氮化硅的电介质膜的方法，用于氧化衬底表面上的氮化硅，包括将衬底的表面暴露于选自氧，一氧化氮和一氧化二氮，并将基板的表面暴露于无氢氮源，其中无氢氮源是选自氮，一氧化氮和一氧化二氮的气体。

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