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1. 发明授权

US06328808B1 Apparatus and method for aligning and controlling edge deposition on a substrate 失效
标题翻译：用于对准和控制衬底上的边缘沉积的装置和方法
公开(公告)号：US06328808B1
公开(公告)日：2001-12-11
申请号：US09543393
申请日：2000-04-05
申请人： Kenneth Tsai , Joseph Yudovsky , Steve Ghanayem , Ken K. Lai , Patricia Liu , Toshiyuki Nakagawa , Maitreyee Mahajani
发明人： Kenneth Tsai , Joseph Yudovsky , Steve Ghanayem , Ken K. Lai , Patricia Liu , Toshiyuki Nakagawa , Maitreyee Mahajani
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/4585
摘要： An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.
摘要翻译：用于使处理室中的支撑构件上的基板对准的对准机构包括一组引导销，其从支撑构件的上表面延伸，围绕其周边等间隔开并间隔开，以在其间对准阴影环。引导销的内表面向外倾斜以形成用于接收和对准支撑构件上的基板的倒置漏斗。在支撑构件的上表面中的环形气体沟槽提供用于供应吹扫气体的连通并且引导围绕衬底的周边边缘的气体。在气槽上部分延伸的引导销包括其中的槽，其通过引导销从气槽到衬底的周缘提供流体连通。引导销还与形成在阴影环中的对准孔配合，使得当支撑构件移动到处理位置时，引导销的内表面邻接对准孔中的邻接表面并将阴影环对准支撑构件和在基板上。衣架构件在每个基底的处理之间支撑和对准阴影环。

2. 发明申请

US20070141856A1 Methods and apparatus for incorporating nitrogen in oxide films 有权
公开(公告)号：US20070141856A1
公开(公告)日：2007-06-21
申请号：US11493193
申请日：2006-07-25
申请人： Tatsuya Sato , Patricia Liu , Fanos Christodoulou
发明人： Tatsuya Sato , Patricia Liu , Fanos Christodoulou
IPC分类号： H01L21/31
CPC分类号： H01L21/02 , H01J37/32862 , H01L21/28202 , H01L21/3145 , H01L21/31612 , H01L21/31641 , H01L21/31645 , Y10T29/41
摘要： In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

3. 发明授权

US06186092B1 Apparatus and method for aligning and controlling edge deposition on a substrate 失效
公开(公告)号：US06186092B1
公开(公告)日：2001-02-13
申请号：US08914522
申请日：1997-08-19
申请人： Kenneth Tsai , Joseph Yudovsky , Steve Ghanayem , Ken K. Lai , Patricia Liu , Toshiyuki Nakagawa , Maitreyee Mahajani
发明人： Kenneth Tsai , Joseph Yudovsky , Steve Ghanayem , Ken K. Lai , Patricia Liu , Toshiyuki Nakagawa , Maitreyee Mahajani
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/4585
摘要： An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.

4. 发明授权

US06218300B1 Method and apparatus for forming a titanium doped tantalum pentaoxide dielectric layer using CVD 失效
标题翻译：使用CVD形成掺杂钛的五氧化钽电介质层的方法和装置
公开(公告)号：US06218300B1
公开(公告)日：2001-04-17
申请号：US09097301
申请日：1998-06-12
申请人： Pravin K. Narwankar , Turgut Sahin , Randall S. Urdahl , Ankineedu Velaga , Patricia Liu
发明人： Pravin K. Narwankar , Turgut Sahin , Randall S. Urdahl , Ankineedu Velaga , Patricia Liu
IPC分类号： H01L2144
CPC分类号： C23C16/405
摘要： A method and apparatus for forming a titanium doped tantalum pentaoxide dielectric using a CVD process. According to the present invention a substrate is placed in the deposition chamber. A source of tantalum, a source of titanium, and an oxygen containing gas are then fed into the chamber. Thermal energy is used to decompose the source of tantalum to form tantalum atoms, and decompose the source of titanium to form titanium atoms in the deposition chamber. The titanium atoms, tantalum atoms and the oxygen containing gas then react to form a tantalum pentaoxide dielectric film doped with titanium.
摘要翻译：使用CVD工艺形成掺杂钛的五氧化钽电介质的方法和装置。根据本发明，将基板放置在沉积室中。然后将钽源，钛源和含氧气体进料到室中。热能用于分解钽源以形成钽原子，并且在沉积室中分解钛源以形成钛原子。然后，钛原子，钽原子和含氧气体反应形成掺杂有钛的五氧化钽电介质膜。

5. 发明申请

US20070212896A1 METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM 有权
标题翻译：使用低能量等离子体系统制造高介电常数晶体闸门的方法和装置
公开(公告)号：US20070212896A1
公开(公告)日：2007-09-13
申请号：US11683984
申请日：2007-03-08
申请人： Christopher Olsen , Thai Chua , Steven Hung , Patricia Liu , Tatsuya Sato , Alex Paterson , Valentin Todorov , John Holland
发明人： Christopher Olsen , Thai Chua , Steven Hung , Patricia Liu , Tatsuya Sato , Alex Paterson , Valentin Todorov , John Holland
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01J37/32082 , H01J37/32146 , H01L21/02148 , H01L21/02197 , H01L21/02266 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/316 , H01L29/495 , H01L29/4966 , H01L29/513
摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.
摘要翻译：本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。

6. 发明申请

US20070111458A1 Methods and apparatus for incorporating nitrogen in oxide films 有权
标题翻译：在氮氧化物膜中掺入氮的方法和装置
公开(公告)号：US20070111458A1
公开(公告)日：2007-05-17
申请号：US11446444
申请日：2006-06-02
申请人： Tatsuya Sato , Patricia Liu , Fanos Christodoulou
发明人： Tatsuya Sato , Patricia Liu , Fanos Christodoulou
IPC分类号： H01L21/336
CPC分类号： H01L21/02 , H01J37/32862 , H01L21/28202 , H01L21/3145 , H01L21/31612 , H01L21/31641 , H01L21/31645 , Y10T29/41
摘要： In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了第一种方法。第一种方法包括以下步骤：（1）用积极的等离子体预处理室; （2）将基板装载到处理室中; 和（3）在处理室内的基板上进行等离子体氮化处理。使用等离子体功率预处理室，该等离子体功率比基板的等离子体氮化期间使用的等离子体功率高至少150％。提供了许多其他方面。

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