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    • 4. 发明授权
    • Semiconductor lasers
    • 半导体激光器
    • US07310358B2
    • 2007-12-18
    • US11015990
    • 2004-12-17
    • Christopher L. ChuaMichael A. KneisslPatrick Y. MaedaNoble M. JohnsonRoss D. BringansJohn E. NorthrupDavid K. Biegelsen
    • Christopher L. ChuaMichael A. KneisslPatrick Y. MaedaNoble M. JohnsonRoss D. BringansJohn E. NorthrupDavid K. Biegelsen
    • H01S3/10H01S5/00H01S3/14
    • H01S5/0425H01S5/4031H01S5/4087
    • Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
    • 诸如激光结构的激光器可以包括两个或更多个半导体结构,其基本相同或包括相同的半导体材料并具有基本上相同的几何形状,例如紧密间隔的双点双光束或四点四光束, 光束激光器。 激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。 例如,电流或接触结构可以被不同地构造以防止或以其他方式影响锁相,例如通过引起不同的阈值电流和不同的工作温度。 示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。