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1. 发明授权

US07498948B1 Electronic article surveillance (EAS) tag/device with coplanar and/or multiple coil circuits, an EAS tag/device with two or more memory bits, and methods for tuning the resonant frequency of an RLC EAS tag/device 有权
标题翻译：具有共面和/或多个线圈电路的电子物品监视（EAS）标签/设备，具有两个或多个存储位的EAS标签/设备以及用于调谐RLC EAS标签/设备的谐振频率的方法
公开(公告)号：US07498948B1
公开(公告)日：2009-03-03
申请号：US11900365
申请日：2007-09-10
申请人： Christopher Gudeman , J. Devin MacKenzie , J. Montague Cleeves , Jose Arreola
发明人： Christopher Gudeman , J. Devin MacKenzie , J. Montague Cleeves , Jose Arreola
IPC分类号： G08B13/14
CPC分类号： G08B13/242 , G08B13/2414 , G08B13/2417 , G08B13/2437 , G08B13/2448
摘要： An EAS device, and methods for making the device for tuning the resonant frequency of the same is disclosed. The EAS device includes: an outer inductor having one end coupled to a linear or nonlinear capacitor plate; an inner inductor having one end coupled to the other type of capacitor; a first dielectric film on the outer and inner inductors and the capacitor plates coupled thereto, having openings exposing other ends of the outer and inner inductors; a second linear capacitor plate on the dielectric film; a second nonlinear capacitor plate on the dielectric film; a second dielectric film containing holes for the second linear and nonlinear capacitor plates, and exposing the other ends of the first and second inductors; and first and second conducting straps on the second dielectric film, configured to electrically connect one of the exposed inductor ends to a corresponding second capacitor plate.
摘要翻译：公开了一种EAS装置，以及用于制造用于调谐其谐振频率的装置的方法。 EAS设备包括：外部电感器，其一端耦合到线性或非线性电容器板; 内部电感器，其一端耦合到另一类电容器; 在外电感器和内电感器上的第一电介质膜和与其耦合的电容器板，其具有暴露外电感器和内电感器的另一端的开口; 电介质膜上的第二线性电容器板; 电介质膜上的第二非线性电容器板; 第二电介质膜，其容纳用于所述第二线性和非线性电容器板的孔，并且暴露所述第一和第二电感器的另一端; 以及在所述第二电介质膜上的第一和第二导电带，被配置为将所述暴露的电感器端中的一个电连接到相应的第二电容器板。

2. 发明授权

US07286053B1 Electronic article surveillance (EAS) tag/device with coplanar and/or multiple coil circuits, an EAS tag/device with two or more memory bits, and methods for tuning the resonant frequency of an RLC EAS tag/device 失效
标题翻译：具有共面和/或多个线圈电路的电子物品监视（EAS）标签/设备，具有两个或多个存储位的EAS标签/设备以及用于调谐RLC EAS标签/设备的谐振频率的方法
公开(公告)号：US07286053B1
公开(公告)日：2007-10-23
申请号：US11104375
申请日：2005-04-11
申请人： Christopher Gudeman , J. Devin MacKenzie , J. Montague Cleeves , Jose Arreola
发明人： Christopher Gudeman , J. Devin MacKenzie , J. Montague Cleeves , Jose Arreola
IPC分类号： G08B13/14
CPC分类号： G08B13/242 , G08B13/2414 , G08B13/2417 , G08B13/2437 , G08B13/2448
摘要： An electronic article surveillance (EAS) tag/device with coplanar and/or multiple coil circuits, a tag/device with two or more memory bits, and methods for making and tuning the resonant frequency of an EAS tag/device. The device generally includes: an outer inductor having one end coupled to a capacitor plate; an inner inductor having one end coupled to an other capacitor plate; a first dielectric film on the outer and inner inductors and the capacitor plates coupled thereto, having openings therein exposing other ends of the outer and inner inductors; a linear capacitor plate and a nonlinear capacitor plate on the first dielectric film; a second dielectric film containing holes therein for the second linear and nonlinear capacitor plates, and exposing the other ends of the first and second inductors; and first and second conducting straps on the second dielectric film, electrically connecting one of the exposed inductor ends to a corresponding second capacitor plate.
摘要翻译：具有共面和/或多个线圈电路的电子物品监视（EAS）标签/设备，具有两个或多个存储器位的标签/设备，以及用于制造和调谐EAS标签/设备的谐振频率的方法。器件通常包括：外部电感器，其一端耦合到电容器板; 内部电感器，其一端耦合到另一个电容器板; 外电感器和内电感器上的第一电介质膜和耦合到其上的电容器板，其中具有开口的外部和内部电感器的另一端; 第一电介质膜上的线性电容器板和非线性电容器板; 第二电介质膜，用于所述第二线性和非线性电容器板，并且暴露所述第一和第二电感器的另一端; 以及在第二介电膜上的第一和第二导电带，将暴露的电感器端中的一个电连接到相应的第二电容器板。

3. 发明授权

US06831346B1 Buried layer substrate isolation in integrated circuits 有权
标题翻译：集成电路中埋地层衬底隔离
公开(公告)号：US06831346B1
公开(公告)日：2004-12-14
申请号：US09849047
申请日：2001-05-04
申请人： Gabriel Li , Kenelm G. D. Murray , Jose Arreola , Shahin Sharifzadeh , K. Nirmal Ratnakumar
发明人： Gabriel Li , Kenelm G. D. Murray , Jose Arreola , Shahin Sharifzadeh , K. Nirmal Ratnakumar
IPC分类号： H01L2900
CPC分类号： H01L29/41758 , H01L21/761 , H01L21/823878 , H01L29/0847
摘要： In an embodiment of an integrated circuit structure having buried layer substrate isolation and a method for forming same, a buried layer having conductivity type opposite to that of an overlying well region is used for wells containing transistors prone to noise generation, where the wells are of the same conductivity type as the substrate. The buried layer may in some embodiments include a first portion underlying the transistor and a second portion spaced apart from and laterally surrounding the first portion. In some embodiments, the circuit may include a doped annular region of the same conductivity type as the buried layer, where the annular region contacts a portion of the buried layer and laterally surrounds the transistor. The circuit may further include metallization adapted to connect the well and annular region to opposite polarities of a power supply voltage, or in some embodiments to preclude such connection.
摘要翻译：在具有掩埋层衬底隔离的集成电路结构及其形成方法的实施例中，具有与上覆阱区相反的导电类型的掩埋层用于容纳产生噪声的晶体管的阱，其中阱为与基片相同的导电类型。在一些实施例中，掩埋层可以包括晶体管下面的第一部分和与第一部分间隔开并横向包围第一部分的第二部分。在一些实施例中，电路可以包括与埋层相同的导电类型的掺杂环形区域，其中环形区域接触掩埋层的一部分并横向围绕晶体管。电路还可以包括适于将阱和环形区域连接到电源电压的相反极性的金属化，或者在一些实施例中以排除这种连接。

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