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1. 发明申请

US20120083983A1 VEHICULAR BRAKING CONTROL DEVICE 审中-公开
标题翻译：车辆制动控制装置
公开(公告)号：US20120083983A1
公开(公告)日：2012-04-05
申请号：US13376952
申请日：2010-02-19
申请人： Christian Danz , Takuya Matsushita
发明人： Christian Danz , Takuya Matsushita
IPC分类号： B60T7/22 , G06F19/00
CPC分类号： B60T7/22 , B60T7/12 , B60T8/885 , G08G1/165 , G08G1/166
摘要： To provide a vehicular braking control device which, at the time of a collision of a host vehicle, can apply a braking force to the host vehicle while reducing the potential for a rear-end collision from a following vehicle.A vehicular braking control device equipped with collision detecting means that detects a collision of a host vehicle and braking force applying means that applies a braking force to the host vehicle when a collision of the host vehicle has been detected includes: following vehicle running state detecting means that detects whether or not there is, and the running state of, a following vehicle; following vehicle braking force detecting means that detects whether or not the following vehicle has a braking control device on board; and avoidance determining means which, in a case where there is the following vehicle at the time of a collision of the host vehicle, discriminates whether or not the following vehicle can avoid the host vehicle on the basis of information detected by the following vehicle running state detecting means and the following vehicle braking force detecting means, wherein the braking force applying means varies the braking force it applies to the host vehicle on the basis of the result of the determination by the avoidance determining means.
摘要翻译：本发明提供一种车辆制动控制装置，其在本车辆碰撞时可以向主车辆施加制动力，同时减少后续车辆的后端碰撞的可能性。具有检测本车辆的碰撞的碰撞检测装置的车辆制动控制装置以及当检测到本车辆的碰撞时向本车辆施加制动力的制动力施加装置包括：跟随车辆行驶状态检测装置检测以下车辆是否存在和运行状态; 跟随车辆制动力检测装置，其检测后续车辆是否具有制动控制装置; 以及回避确定装置，其在本车辆发生碰撞时存在后续车辆的情况下，基于由后续车辆行驶状态检测到的信息判别后续车辆是否能够避免本车辆检测装置和随后的车辆制动力检测装置，其中制动力施加装置根据回避确定装置的确定结果改变其对本车辆的制动力。

2. 发明授权

US06617080B1 Photomask, semiconductor device, and method for exposing through photomask 失效
标题翻译：光掩模，半导体器件和通过光掩模曝光的方法
公开(公告)号：US06617080B1
公开(公告)日：2003-09-09
申请号：US09563953
申请日：2000-05-02
申请人： Toshihide Kawachi , Takuya Matsushita , Shigenori Yamashita , Yuki Miyamoto , Atsushi Ueno , Shinroku Maejima
发明人： Toshihide Kawachi , Takuya Matsushita , Shigenori Yamashita , Yuki Miyamoto , Atsushi Ueno , Shinroku Maejima
IPC分类号： G03F900
CPC分类号： G03F7/70633
摘要： The present invention provides a photomask, a semiconductor device, and a method for exposing through the photomask. The photomask comprises a photomask substrate, and an on-mask circuit area including an on-mask circuit pattern and an on-mask test mark area including an on-mask test pattern, both formed on the surface of the substrate, wherein the photomask substrate further includes an on-mask photolithography screening mark area including an on-mask comparison pattern and an on-mask screening pattern, the on-mask comparison pattern has substantially the same configuration as at least a part of the on-mask circuit pattern, and the on-mask screening pattern has substantially the same configuration as at least a part of the on-mask test pattern. The present invention allows it to measure the actual displacement generated from an overlaying (i.e. alignment) process for the purpose of eliminating of an the overlay displacement which can take place in a photolithography process.
摘要翻译：本发明提供了一种光掩模，半导体器件和用于曝光光掩模的方法。光掩模包括光掩模基板和包括掩模电路图案的掩模电路区域和包括掩模测试图案的掩模测试标记区域，二者都形成在基板的表面上，其中光掩模基板进一步包括包括掩膜比较图案和掩模屏蔽图案的掩模光刻掩模标记区域，掩模比较图案具有与至少一部分屏蔽电路图案基本相同的配置，以及掩模掩模图案具有与掩模测试图案的至少一部分基本相同的构造。本发明允许它测量从重叠（即对准）过程产生的实际位移，以消除可能在光刻工艺中发生的覆盖位移。

3. 发明授权

US06514122B2 System for manufacturing semiconductor device utilizing photolithography technique 失效
标题翻译：利用光刻技术制造半导体器件的系统
公开(公告)号：US06514122B2
公开(公告)日：2003-02-04
申请号：US09773497
申请日：2001-02-02
申请人： Takayuki Saito , Tadashi Miyagi , Takuya Matsushita
发明人： Takayuki Saito , Tadashi Miyagi , Takuya Matsushita
IPC分类号： B24D4900
CPC分类号： G03F7/70258 , G03F7/70641 , G03F9/7026
摘要： A product pattern and a test pattern for managing a focus offset value are patterned onto a product wafer by means of exposure, and is patterned onto the product wafer by means of exposure. The exposed product wafer is developed. A measurement section measures the dimension of the test pattern patterned on the product wafer. On the basis of the thus-measured dimension of the test pattern, the focus off set value set in a system for manufacturing a semiconductor device is computed by a computation section. The focus offset value set in a projection optical system of the system for manufacturing a semiconductor device is adjusted by means of an adjustment section so as to become identical with the computed focus offset value.
摘要翻译：通过曝光将产品图案和用于管理聚焦偏移值的测试图案图案化到产品晶片上，并通过曝光将其图案化到产品晶片上。曝光的产品晶片被开发出来。测量部分测量在产品晶片上图案化的测试图案的尺寸。基于这样测量的测试尺寸的尺寸，通过计算部分计算用于制造半导体器件的系统中设定的聚焦设定值。通过调整部调整用于制造半导体器件的系统的投影光学系统中设置的聚焦偏移值，使其与计算出的聚焦偏移值相同。

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