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1. 发明申请

US20050153216A1 Lithography mask and lithography system for direction-dependent exposure 审中-公开
标题翻译：用于方向依赖性曝光的光刻掩模和光刻系统
公开(公告)号：US20050153216A1
公开(公告)日：2005-07-14
申请号：US10998300
申请日：2004-11-26
申请人： Christian Crell , Lothar Bauch , Holger Moller , Ralf Ziebold
发明人： Christian Crell , Lothar Bauch , Holger Moller , Ralf Ziebold
IPC分类号： G03B27/42 , G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F1/36
摘要： Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure (1) for minimizing scattered light, the auxiliary structure (1) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device (11, 11a, 11b) for the mask (10, 10a, 10b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.
摘要翻译：具有制造半导体部件的结构的光刻掩模，特别是用于依赖于方向的曝光装置的存储器部件，其特征在于至少一个用于使散射光最小化的辅助结构（1），所述辅助结构（1）基本上布置在用于掩模（10,10a，10b）的方向依赖性曝光装置（11,11a，11b）的低分辨率曝光方向。因此，辅助结构以简单的方式产生减少散射光的装置。

2. 发明申请

US20050287447A1 Reflection mask, use of the reflection mask and method for fabricating the reflection mask 有权
标题翻译：反射掩模，反射掩模的使用和制造反射掩模的方法
公开(公告)号：US20050287447A1
公开(公告)日：2005-12-29
申请号：US11158271
申请日：2005-06-21
申请人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
发明人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
IPC分类号： G03C5/00 , G03F1/24 , G03H1/02 , G21K5/00 , G03F1/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/70 , G21K2201/067
摘要： A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13′, 17) is at least partly arranged on a bright field of the multilayer structure (11).
摘要翻译：一种反射掩模，其包括用于将布局平版印刷到目标基底上的结构（20），特别是用于EUV光刻中的反射掩模和反射多层结构（11）。至少一个减光层（13'，17）至少部分地布置在多层结构（11）的明场上。

3. 发明申请

US20070037071A1 Method for removing defect material of a lithography mask 审中-公开
标题翻译：去除光刻掩模缺陷材料的方法
公开(公告)号：US20070037071A1
公开(公告)日：2007-02-15
申请号：US11510701
申请日：2006-08-28
申请人： Christoph Noelscher , Martin Verbeek , Christian Crell
发明人： Christoph Noelscher , Martin Verbeek , Christian Crell
IPC分类号： C23C14/32 , G21K5/10 , H01J37/08 , G03C5/00 , C23C14/00 , G03F1/00
CPC分类号： G03F1/74
摘要： The present invention relates to a method for removing defect material in a transmissive region of a lithography mask having transmissive carrier material and absorber material. A first method step involves removing defective material and absorber material in a processing region. A second method step involves applying an absorbent material in an outer region, the outer region depending on the partial region of the processing region that was previously covered with absorber material.
摘要翻译：本发明涉及一种用于去除具有透射载体材料和吸收材料的光刻掩模的透射区域中的缺陷材料的方法。第一种方法步骤涉及在处理区域中去除有缺陷的材料和吸收材料。第二种方法步骤包括在外部区域中涂覆吸收材料，外部区域取决于先前被吸收材料覆盖的处理区域的部分区域。

4. 发明授权

US06841316B2 Method for producing a phase shift mask 有权
标题翻译：用于制造相移掩模的方法
公开(公告)号：US06841316B2
公开(公告)日：2005-01-11
申请号：US10185281
申请日：2002-06-27
申请人： Christian Crell
发明人： Christian Crell
IPC分类号： G03F1/00 , G03C5/00 , G03F9/00
CPC分类号： G03F1/26
摘要： To avoid charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner, so that a residual chromium layer, which is approximately 5-20 nm thick, remains at the bottom of the columns. The residual chromium layer connects the chromium webs, which are otherwise isolated, in a conductive manner and therefore dissipates the charge to the outside during the subsequent structuring by an electron beam. In the process steps that follow the exposure of the second level—preferably of alternating attenuated phase shift masks—two further chromium etching steps can be carried out, with a small etching depth in each case in the columns provided for the quartz etching of different phase shift.
摘要翻译：为了避免分离的铬结构在第二水平的衰减相移掩模的构造期间的充电效应，先前的铬蚀刻步骤优选以时间控制的方式进行，使得残留的铬层约为5-20 nm厚，保留在色谱柱的底部。残留的铬层以导电的方式连接另外被隔离的铬网，从而在随后的电子束构造期间将电荷消散到外部。在第二级曝光之后的工艺步骤（优选交替的衰减相移掩模）中，可以执行两个另外的铬蚀刻步骤，每个情况下，在为不同相的石英蚀刻提供的列中具有小的蚀刻深度转移。

5. 发明授权

US06970589B2 Method for inspecting defects on a mask 失效
标题翻译：检查面罩缺陷的方法
公开(公告)号：US06970589B2
公开(公告)日：2005-11-29
申请号：US10060450
申请日：2002-01-30
申请人： Christian Crell
发明人： Christian Crell
IPC分类号： G01N21/956 , G03F1/00 , G06K9/00
CPC分类号： G03F1/84 , G01N21/95607
摘要： The whole-area defect inspection of masks is made possible by interconnecting two otherwise independent defect inspection systems via a powerful bus system or interface. As a result, two masks that are identical, at least in sub-areas, can be inspected and compared in parallel and in real time. It is not necessary to temporarily store large quantities of data. The running defect inspection can be interrupted flexibly and continued again. This implementation of mask-to-mask inspection takes into account that simulation algorithms for die-to-database inspection of future mask technology, for example, alternating phase masks, EUV masks, stencil masks, and so on are not available in good time. In addition, the inspection time is reduced considerably.
摘要翻译：通过强大的总线系统或接口将两个独立的缺陷检测系统相互连接，可以实现掩模的全面缺陷检查。结果，至少在子区域中相同的两个掩模可以被并行和实时地检查和比较。不需要临时存储大量的数据。运行缺陷检查可以灵活地中断并继续。掩模对掩模检查的这种实现考虑到未来掩模技术的模数到数据库检查的模拟算法，例如交替相位掩模，EUV掩模，模板掩模等不能及时获得。此外，检查时间大大减少。

6. 发明授权

US07588867B2 Reflection mask, use of the reflection mask and method for fabricating the reflection mask 有权
标题翻译：反射掩模，反射掩模的使用和制造反射掩模的方法
公开(公告)号：US07588867B2
公开(公告)日：2009-09-15
申请号：US11158271
申请日：2005-06-21
申请人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
发明人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/70 , G21K2201/067
摘要： A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13′, 17) is at least partly arranged on a bright field of the multilayer structure (11).
摘要翻译：一种反射掩模，其包括用于将布局平版印刷到目标基底上的结构（20），特别是用于EUV光刻中的反射掩模和反射多层结构（11）。至少一个减光层（13'，17）至少部分地布置在多层结构（11）的明场上。

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