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1. 发明申请

US20060080046A1 Measuring flare in semiconductor lithography 有权
公开(公告)号：US20060080046A1
公开(公告)日：2006-04-13
申请号：US10964102
申请日：2004-10-13
申请人： David Ziger , Ralf Ziebold , Frank Goodwin
发明人： David Ziger , Ralf Ziebold , Frank Goodwin
IPC分类号： G06F19/00
CPC分类号： G03F7/70941
摘要： Systems, methods, and lithography masks for measuring flare in semiconductor lithography. A layer of photosensitive material is exposed to a first test pattern and a second test pattern, the second test pattern comprising an opaque or attenuated region. The second test pattern is placed proximate features formed in a photosensitive material in a first exposure by the first test pattern, in a second exposure by the second test pattern on the same mask or a different mask. Alternatively, the second test pattern may be disposed proximate a portion of the first test pattern on a single mask using a single exposure. If flare exists in the optical system, the second test pattern causes line shortening in the features formed in the photosensitive material of the first test pattern. The line shortening can be measured to determine the effect of flare in the lithography system.

2. 发明授权

US07207030B2 Method for improving a simulation model of photolithographic projection 有权
标题翻译：改进光刻投影仿真模型的方法
公开(公告)号：US07207030B2
公开(公告)日：2007-04-17
申请号：US10995126
申请日：2004-11-24
申请人： Bernd Küchler , Ralf Ziebold , Christoph Nölscher
发明人： Bernd Küchler , Ralf Ziebold , Christoph Nölscher
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70441
摘要： A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.
摘要翻译：提供了一种用于改进在光掩模上形成的图案的光刻模拟的光刻仿真模型的方法。从考虑到光刻过程中的物理化学过程的二维模拟模型出发，计算频率依赖的强度损失，其通过傅立叶空间中的模拟强度分布乘以滤波函数来确定。获得基板平面中的强度分布的精确计算。该方法实现了具有显着更短处理持续时间的三维模型的精度，并且特别适用于OPC结构的计算。

3. 发明授权

US07939224B2 Mask with registration marks and method of fabricating integrated circuits 有权
标题翻译：具有配准标记的掩模和制造集成电路的方法
公开(公告)号：US07939224B2
公开(公告)日：2011-05-10
申请号：US11855234
申请日：2007-09-14
申请人： Andreas Jahnke , Ralf Ziebold , Torsten Maehr
发明人： Andreas Jahnke , Ralf Ziebold , Torsten Maehr
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F9/7076 , G03F1/44
摘要： A photomask for a lithography apparatus includes a chip pattern configured to be transferred into a resist layer on a workpiece and at least one registration mark that is configured not to be transferred into the resist layer. Mask qualification may be improved without impacting wafer level processes.
摘要翻译：用于光刻设备的光掩模包括被配置为转移到工件上的抗蚀剂层中的芯片图案和被配置为不被转移到抗蚀剂层中的至少一个配准标记。可以改善掩模鉴定，而不影响晶片级处理。

4. 发明申请

US20080028359A1 Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure 审中-公开
标题翻译：端接结构，用于制造端接结构的掩模，光刻工艺和具有端接结构的半导体器件
公开(公告)号：US20080028359A1
公开(公告)日：2008-01-31
申请号：US11496279
申请日：2006-07-31
申请人： Stefan Blawid , Wolfram Koestler , Ralf Ziebold
发明人： Stefan Blawid , Wolfram Koestler , Ralf Ziebold
IPC分类号： G06F17/50
CPC分类号： H01L27/0203 , G03F1/00
摘要： Termination structure for a pattern, especially an at least partially regular spaced pattern used in the manufacturing of semiconductor devices, especially DRAM-chips, wherein the termination structure comprises at least a first line-shaped element and at least one extension element adjacent to the first line-shaped element partially increasing the width of the first line-shaped element.
摘要翻译：用于图案的端接结构，特别是用于制造半导体器件，特别是DRAM芯片的至少部分规则间隔的图案，其中终端结构包括至少第一线状元件和至少一个与第一线形元件相邻的延伸元件线状元件部分地增加第一线状元件的宽度。

5. 发明申请

US20060290919A1 Method for testing the generation of scattered light by photolithographic imaging devices 审中-公开
标题翻译：通过光刻成像装置测试散射光的产生的方法
公开(公告)号：US20060290919A1
公开(公告)日：2006-12-28
申请号：US11360272
申请日：2006-02-23
申请人： Andreas Jahnke , Patrick Klingbeil , Ralf Ziebold , Lars Voelkel , Alberto Lopez-Gomez , Thomas Marschner
发明人： Andreas Jahnke , Patrick Klingbeil , Ralf Ziebold , Lars Voelkel , Alberto Lopez-Gomez , Thomas Marschner
IPC分类号： G01M11/00
CPC分类号： G03F7/70591 , G03F7/70625
摘要： A method for testing the generation of scattered light by photolithographic imaging devices is disclosed. In one embodiment, measuring structures that are to be imaged in a photoresist are provided in the vicinity of deliberately structured sections that cause scattered light in the imaging device to be tested, in a photomask. The scattered light which is caused as a function of the configuration of the sections acts on the measurement structures in the photoresist and leads to changes in their CD, which is measured in the photoresist, and allows conclusions to be drawn about the scattered-light behavior of the imaging device. The method is suitable for specifically testing the lens system of the imaging device.
摘要翻译：公开了一种通过光刻成像装置测试散射光的产生的方法。在一个实施例中，将在光致抗蚀剂中成像的测量结构设置在光掩模中被测试的导致成像装置中的散射光的故意构造的部分附近。作为这些部分的结构的函数引起的散射光作用在光致抗蚀剂中的测量结构上，并导致其在光致抗蚀剂中测量的CD的变化，并且可以得出关于散射光行为的结论的成像装置。该方法适用于专门测试成像装置的透镜系统。

6. 发明授权

US07096127B2 Measuring flare in semiconductor lithography 有权
标题翻译：测量半导体光刻中的光斑
公开(公告)号：US07096127B2
公开(公告)日：2006-08-22
申请号：US10964102
申请日：2004-10-13
申请人： David Ziger , Ralf Ziebold , Frank Goodwin
发明人： David Ziger , Ralf Ziebold , Frank Goodwin
IPC分类号： G06F19/00
CPC分类号： G03F7/70941
摘要： Systems, methods, and lithography masks for measuring flare in semiconductor lithography. A layer of photosensitive material is exposed to a first test pattern and a second test pattern, the second test pattern comprising an opaque or attenuated region. The second test pattern is placed proximate features formed in a photosensitive material in a first exposure by the first test pattern, in a second exposure by the second test pattern on the same mask or a different mask. Alternatively, the second test pattern may be disposed proximate a portion of the first test pattern on a single mask using a single exposure. If flare exists in the optical system, the second test pattern causes line shortening in the features formed in the photosensitive material of the first test pattern. The line shortening can be measured to determine the effect of flare in the lithography system.
摘要翻译：用于测量半导体光刻中的光斑的系统，方法和光刻掩模。感光材料层暴露于第一测试图案和第二测试图案，第二测试图案包括不透明或衰减区域。第二测试图案通过第一测试图案在第一次曝光中放置在感光材料中形成的接近特征处，在第二测试图案的第二次曝光中放置在相同的掩模或不同的掩模上。或者，第二测试图案可以使用单次曝光设置在单个掩模上的第一测试图案的一部分附近。如果在光学系统中存在耀斑，则第二测试图案使得在第一测试图案的感光材料中形成的特征中的线缩短。可以测量线缩短以确定光刻系统中光斑的影响。

7. 发明申请

US20050153216A1 Lithography mask and lithography system for direction-dependent exposure 审中-公开
标题翻译：用于方向依赖性曝光的光刻掩模和光刻系统
公开(公告)号：US20050153216A1
公开(公告)日：2005-07-14
申请号：US10998300
申请日：2004-11-26
申请人： Christian Crell , Lothar Bauch , Holger Moller , Ralf Ziebold
发明人： Christian Crell , Lothar Bauch , Holger Moller , Ralf Ziebold
IPC分类号： G03B27/42 , G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F1/36
摘要： Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure (1) for minimizing scattered light, the auxiliary structure (1) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device (11, 11a, 11b) for the mask (10, 10a, 10b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.
摘要翻译：具有制造半导体部件的结构的光刻掩模，特别是用于依赖于方向的曝光装置的存储器部件，其特征在于至少一个用于使散射光最小化的辅助结构（1），所述辅助结构（1）基本上布置在用于掩模（10,10a，10b）的方向依赖性曝光装置（11,11a，11b）的低分辨率曝光方向。因此，辅助结构以简单的方式产生减少散射光的装置。

8. 发明申请

US20050026049A1 Method for forming an opening on an alternating phase shift mask 审中-公开
标题翻译：在交替相移掩模上形成开口的方法
公开(公告)号：US20050026049A1
公开(公告)日：2005-02-03
申请号：US10870699
申请日：2004-06-17
申请人： Ralf Ziebold , Gerhard Kunkel
发明人： Ralf Ziebold , Gerhard Kunkel
IPC分类号： G03C5/00 , G03F1/00 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30
摘要： In a method of manufacturing a phase shift mask, an opening is produced by lithography in a second layer (32) arranged on an opaque layer (10). An etching step in which a first subregion (12) on a deep-etched surface of the transparent substrate (18) is uncovered is carried out in order for the opening to be transferred into the opaque layer (10) and into the substrate (18) below. Widening of the opening in the second layer (32) and etching so as to transfer the opening into the opaque layer (10) lead to the formation of a second subregion (14), which adjoins the recessed first subregion (12) and surrounds it in rim form, on the surface of the transparent substrate (18).
摘要翻译：在制造相移掩模的方法中，在布置在不透明层（10）上的第二层（32）中通过光刻产生开口。执行蚀刻步骤，其中在透明基板（18）的深蚀刻表面上的第一子区域（12）未被覆盖，以便将开口转移到不透明层（10）中并进入基板（18））。在第二层（32）中的开口的扩大和蚀刻以将开口转移到不透明层（10）中导致形成邻接凹陷的第一子区域（12）并围绕其的第二子区域（14）在透明基板（18）的表面上。

9. 发明申请

US20090075178A1 Mask with Registration Marks and Method of Fabricating Integrated Circuits 有权
标题翻译：具有注册标记的面具和制造集成电路的方法
公开(公告)号：US20090075178A1
公开(公告)日：2009-03-19
申请号：US11855234
申请日：2007-09-14
申请人： Andreas Jahnke , Ralf Ziebold , Torsten Maehr
发明人： Andreas Jahnke , Ralf Ziebold , Torsten Maehr
IPC分类号： G03F1/00
CPC分类号： G03F9/7076 , G03F1/44
摘要： A photomask for a lithography apparatus includes a chip pattern configured to be transferred into a resist layer on a workpiece and at least one registration mark that is configured not to be transferred into the resist layer. Mask qualification may be improved without impacting wafer level processes.
摘要翻译：用于光刻设备的光掩模包括被配置为转移到工件上的抗蚀剂层中的芯片图案和被配置为不被转移到抗蚀剂层中的至少一个配准标记。可以改善掩模鉴定，而不影响晶片级处理。

10. 发明申请

US20080304029A1 Method and System for Adjusting an Optical Model 审中-公开
标题翻译：调整光学模型的方法和系统
公开(公告)号：US20080304029A1
公开(公告)日：2008-12-11
申请号：US11760295
申请日：2007-06-08
申请人： Rainer Pforr , Thorsten Winkler , Ralf Ziebold , Wolfram Kostler , Jens Reichelt , Stefan Blawid , Sebastian Champigny , Manuel Vorwerk
发明人： Rainer Pforr , Thorsten Winkler , Ralf Ziebold , Wolfram Kostler , Jens Reichelt , Stefan Blawid , Sebastian Champigny , Manuel Vorwerk
IPC分类号： G03B27/14
CPC分类号： G03F7/705 , G03F1/36
摘要： In a method of adjusting an optical parameter of an exposure apparatus, a photolithographic projection is performed using an exposure apparatus and using a layout pattern so as to provide measured layout data with different focus settings of the exposure apparatus. An optical model is provided including at least one optical parameter and a simulated image is created by using the optical model and the layout pattern. The optical model is optimized by modifying the optical parameter.
摘要翻译：在调整曝光装置的光学参数的方法中，使用曝光装置进行光刻投影并使用布局图案，以便提供具有不同曝光装置的焦点设置的测量的布局数据。提供了包括至少一个光学参数的光学模型，并且通过使用光学模型和布局图案来创建模拟图像。通过修改光学参数优化光学模型。

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