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    • 7. 发明授权
    • Complementary voltage controlled oscillator
    • 互补压控振荡器
    • US07123112B2
    • 2006-10-17
    • US10941585
    • 2004-09-15
    • Dong Kyun KangChoong-yul ChaSang-Gug Lee
    • Dong Kyun KangChoong-yul ChaSang-Gug Lee
    • H03B5/04
    • H03B5/1228H03B5/1218H03B5/1243
    • A voltage controlled oscillator is provided. The oscillator has an oscillator amplifier core formed of a complementary pair of FETs connected with their gates in common and connected to share a bias current. An inductance is connected between the common gates and the common drains of the FETs. The inductance may be an inductor element or an inductance of a physical structure of the circuit, such as a bond wire. The voltage controlled oscillator includes a variable capacitor stage connected at the input of the oscillator amplifier stage and a buffer amplifier stage connected at the output of the oscillator amplifier stage. The buffer amplifier of one embodiment includes a pair of complementary FETs having common gates connected to the common drains of the FETs of the oscillator amplifier stage. The buffer amplifier stage also include an inductor and a capacitor connected between common drains of the buffer amplifier FETs and the output.
    • 提供压控振荡器。 该振荡器具有振荡器放大器芯,其由互补的一对FET形成,与它们的栅极共同连接并连接以共享偏置电流。 电感连接在公共栅极和FET的公共漏极之间。 电感可以是电感器元件或电路的物理结构的电感,例如接合线。 压控振荡器包括连接在振荡器放大器级的输入端的可变电容器级和连接在振荡器放大器级的输出端的缓冲放大器级。 一个实施例的缓冲放大器包括一对互补FET,其具有连接到振荡器放大器级的FET的公共漏极的公共栅极。 缓冲放大器级还包括电感器和连接在缓冲放大器FET的公共漏极和输出端之间的电容器。