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    • 5. 发明申请
    • Frequency synthesizing apparatus and method having injection-locked quadrature VCO in RF transceiver
    • RF收发器中具有注入锁相正交VCO的频率合成装置和方法
    • US20070159259A1
    • 2007-07-12
    • US11447887
    • 2006-06-07
    • Chun Deok SuhJeong Wook KohHoon Tae Kim
    • Chun Deok SuhJeong Wook KohHoon Tae Kim
    • H03L7/00
    • H03L7/24H03B21/02H03L7/0995
    • A frequency synthesizing apparatus and method having an injection-locked quadrature VCO in an RF transceiver is provided. In the frequency synthesizer, an I signal following a frequency of a high frequency signal that is input using the injection-locked quadrature VCO and a Q signal thereof are simultaneously generated to have an appropriate driving power. Accordingly, the I signal and the Q signal thereof that are generated in the injection-locked quadrature VCO may be utilized as a local signal for frequency up/down-conversion, without being buffered. An output of an SSB mixer may be directly input into the injection-locked quadrature VCO. Also, high frequency signals that are generated in another circuit such as the SSB mixer, a PLL, or a VCO may be selected to be input into the injection-locked quadrature VCO by a selector.
    • 提供了一种在RF收发器中具有注入锁定正交VCO的频率合成装置和方法。 在频率合成器中,同时产生跟随使用注入锁定正交VCO输入的高频信号的频率的I信号及其Q信号以具有适当的驱动功率。 因此,在注入锁定正交VCO中产生的I信号和Q信号可以用作用于上变频/下变频的本地信号,而不被缓冲。 SSB混频器的输出可以直接输入到注入锁相正交VCO中。 此外,可以选择在诸如SSB混频器,PLL或VCO的另一电路中生成的高频信号,以通过选择器输入到注入锁定正交VCO中。
    • 9. 发明申请
    • Stacked CMOS current mirror using MOSFETs having different threshold voltages
    • 使用具有不同阈值电压的MOSFET的叠层CMOS电流镜
    • US20060181338A1
    • 2006-08-17
    • US11354944
    • 2006-02-16
    • Jeongwook KohChun-deok Suh
    • Jeongwook KohChun-deok Suh
    • G05F1/10
    • G05F3/262
    • A stacked CMOS current mirror using metal oxide semiconductor field effect transistors (MOSFETs) having different threshold voltages is disclosed. The stacked CMOS current mirror includes a first MOSFET having a source and a gate which are connected to a first input current terminal, a second MOSFET having a source connected to a drain of the first MOSFET, a gate connected to the gate of the first MOSFET, and a drain connected to ground, a third MOSFET having a drain connected to a second input current terminal and a gate connected to the source and the gate of the first MOSFET, and a fourth MOSFET having a drain connected to a source of the third MOSFET, a gate connected to the source and the gate of the first MOSFET, and a source connected to the ground.
    • 公开了使用具有不同阈值电压的金属氧化物半导体场效应晶体管(MOSFET)的叠层CMOS电流镜。 堆叠的CMOS电流镜包括具有连接到第一输入电流端子的源极和栅极的第一MOSFET,具有连接到第一MOSFET的漏极的源极的第二MOSFET,连接到第一MOSFET的栅极的栅极 以及与地相连的漏极,具有连接到第二输入电流端子的漏极和连接到第一MOSFET的源极和栅极的栅极的第三MOSFET和具有连接到第三MOSFET源极的漏极的第四MOSFET MOSFET,连接到源极和第一MOSFET的栅极的栅极,以及连接到地的源极。