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    • 2. 发明授权
      US08692103B2 Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same 有权
    • Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same
    • 热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法
    • US08692103B2
    • 2014-04-08
    • US13083666
    • 2011-04-11
    • Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
    • Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
    • H01L35/34
    • H01L35/34 , B22D11/0611 , H01L35/16
    • A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
    • 制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层叠体被固化并形成以形成紧凑体12.此后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加 半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。 结果，晶体取向得到改善，并且热电式的品质提高。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 6. 发明申请
      US20060243314A1 Thermoelectric semiconductor material, thermoelectric semiconductor element therefrom, thermoelectric module including thermoelectric semiconductor element and process for producing these 审中-公开
    • Thermoelectric semiconductor material, thermoelectric semiconductor element therefrom, thermoelectric module including thermoelectric semiconductor element and process for producing these
    • 热电半导体材料，其热电半导体元件，包括热电半导体元件的热电模块及其制造方法
    • US20060243314A1
    • 2006-11-02
    • US10555855
    • 2004-05-07
    • Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
    • Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
    • H01L35/00
    • H01L35/34 , B22D11/0611 , H01L35/16
    • A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the don of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
    • 制备金属混合物，其中将过量的Te加入到基于（Bi-Sb）2 N 3基团的组合物中。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层状体被固化并形成以形成紧凑的12。 之后，紧凑体12以这样的方式发生塑性变形，使得剪切力沿大致平行于原料热电半导体材料10的主层叠方向的单轴方向施加。 结果，具有晶面取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的大致对准。 结果，晶体取向得到改善，并且热电式的品质提高。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 8. 发明申请
      US20110180121A1 THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC SEMICONDUCTOR ELEMENT USING THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC MODULE USING THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME 有权
    • THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC SEMICONDUCTOR ELEMENT USING THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC MODULE USING THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME
    • 热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法
    • US20110180121A1
    • 2011-07-28
    • US13083666
    • 2011-04-11
    • Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
    • Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
    • H01L35/16
    • H01L35/34 , B22D11/0611 , H01L35/16
    • A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
    • 制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层叠体被固化并形成以形成紧凑体12.之后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加 半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。 结果，晶体取向得到改善，并且热电式的品质提高。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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