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1. 发明授权

US08724420B2 SRAM write assist apparatus 有权
标题翻译： SRAM写入辅助装置
公开(公告)号：US08724420B2
公开(公告)日：2014-05-13
申请号：US13105382
申请日：2011-05-11
申请人： Chiting Cheng , Chung-Cheng Chou , Tsung-yung Jonathan Chang
发明人： Chiting Cheng , Chung-Cheng Chou , Tsung-yung Jonathan Chang
IPC分类号： G11C11/413
CPC分类号： G11C11/419 , G11C11/41 , G11C29/021 , G11C29/023 , G11C29/028
摘要： An SRAM write assist apparatus comprises a timer unit and a voltage divider. The voltage divider unit is configured to divide a voltage potential down to a lower level. The output of the voltage divider is connected to a memory cell in a write operation. The timer unit is configured to generate a pulse having a width inversely proportional to the voltage potential applied to a memory chip. Furthermore, the timer unit controls the period in which a lower voltage from the output of the voltage divider is applied to the memory cell. Moreover, external level and timing programmable signals can be used to further adjust the voltage divider's ratio and the pulse width from the timer unit. By employing the SRAM write assist apparatus, a memory chip can perform a reliable and fast write operation.
摘要翻译： SRAM写入辅助装置包括定时器单元和分压器。分压器单元被配置为将电压电位分压到较低电平。在写入操作中，分压器的输出连接到存储单元。定时器单元被配置为产生具有与施加到存储芯片的电压电位成反比的宽度的脉冲。此外，定时器单元控制将来自分压器的输出的较低电压施加到存储单元的周期。此外，可以使用外部电平和定时可编程信号来进一步调整分压器的比例和来自定时器单元的脉冲宽度。通过采用SRAM写入辅助装置，存储器芯片可以执行可靠且快速的写入操作。

2. 发明申请

US20120287736A1 SRAM Write Assist Apparatus 有权
标题翻译： SRAM写辅助装置
公开(公告)号：US20120287736A1
公开(公告)日：2012-11-15
申请号：US13105382
申请日：2011-05-11
申请人： Chiting Cheng , Chung-Cheng Chou , Tsung-yung Jonathan Chang
发明人： Chiting Cheng , Chung-Cheng Chou , Tsung-yung Jonathan Chang
IPC分类号： G11C7/00
CPC分类号： G11C11/419 , G11C11/41 , G11C29/021 , G11C29/023 , G11C29/028
摘要： An SRAM write assist apparatus comprises a timer unit and a voltage divider. The voltage divider unit is configured to divide a voltage potential down to a lower level. The output of the voltage divider is connected to a memory cell in a write operation. The timer unit is configured to generate a pulse having a width inversely proportional to the voltage potential applied to a memory chip. Furthermore, the timer unit controls the period in which a lower voltage from the output of the voltage divider is applied to the memory cell. Moreover, external level and timing programmable signals can be used to further adjust the voltage divider's ratio and the pulse width from the timer unit. By employing the SRAM write assist apparatus, a memory chip can perform a reliable and fast write operation.
摘要翻译： SRAM写入辅助装置包括定时器单元和分压器。分压器单元被配置为将电压电位分压到较低电平。在写入操作中，分压器的输出连接到存储单元。定时器单元被配置为产生具有与施加到存储芯片的电压电位成反比的宽度的脉冲。此外，定时器单元控制将来自分压器的输出的较低电压施加到存储单元的周期。此外，可以使用外部电平和定时可编程信号来进一步调整分压器的比例和来自定时器单元的脉冲宽度。通过采用SRAM写入辅助装置，存储器芯片可以执行可靠且快速的写入操作。

3. 发明授权

US09064550B2 Method and apparatus for word line suppression 有权
标题翻译：用于字线抑制的方法和装置
公开(公告)号：US09064550B2
公开(公告)日：2015-06-23
申请号：US13279375
申请日：2011-10-24
申请人： Jonathan Tsung-Yung Chang , Chiting Cheng , Chien-Kuo Su , Chung-Cheng Chou , Jack Liu
发明人： Jonathan Tsung-Yung Chang , Chiting Cheng , Chien-Kuo Su , Chung-Cheng Chou , Jack Liu
IPC分类号： G11C11/00 , G11C8/08 , G11C11/418
CPC分类号： G11C8/08 , G11C11/418
摘要： A memory access operation on a bit cell of a digital memory, e.g., a static random access memory (SRAM), is assisted by reducing the word line control voltage for reading and boosting it for writing, thus improving data integrity. The bit cell has cross coupled inverters for storing and retrieving a logic state via bit line connections through a passing gate transistor controlled by the word line. A level of a word line signal controlling the passing gate transistor is shifted from a first voltage value to a higher second voltage value to begin a memory access cycle. The level of the word line signal is shifted from the second voltage value to a third voltage value less than the second voltage value during the access cycle. The word line signal is maintained at the third voltage value for a time interval during the access cycle.
摘要翻译：数字存储器的位单元（例如静态随机存取存储器（SRAM））上的存储器访问操作通过减少字线控制电压来进行辅助，用于读取和提升其用于写入，从而提高数据完整性。位单元具有交叉耦合的反相器，用于经由位线连接通过由字线控制的通过栅极晶体管来存储和取回逻辑状态。控制通过栅极晶体管的字线信号的电平从第一电压值移位到较高的第二电压值，以开始存储器访问周期。在访问周期期间，字线信号的电平从第二电压值移位到小于第二电压值的第三电压值。在访问周期期间，字线信号保持在第三电压值一段时间间隔。

4. 发明授权

US09025356B2 Fly-over conductor segments in integrated circuits with successive load devices along a signal path 有权
标题翻译：集成电路中的飞越导体段，沿着信号路径连续的负载装置
公开(公告)号：US09025356B2
公开(公告)日：2015-05-05
申请号：US13221081
申请日：2011-08-30
申请人： Hsiao-Wen Lu , Wei-Jer Hsieh , Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
发明人： Hsiao-Wen Lu , Wei-Jer Hsieh , Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
IPC分类号： G11C5/06 , G11C7/10 , G11C11/00 , G11C11/413
CPC分类号： G11C5/063 , G11C11/413 , Y10T307/445
摘要： The propagation delay of a signal through multiple load devices coupled sequentially along a conductor is improved by separating a subset of the load devices that is more distant from the signal source, and coupling the more distant subset to the signal through a fly-over conductor that bypasses the subset that is nearer to the signal source. The technique is applicable to subsets of bit cells in a random access memory (SRAM) coupled to a given word line, or to word line decoder gates coupled sequentially to a strobe signal, as well as other circuits wherein load devices selectable as a group can be divided into subsets by proximity to the signal source. In an SRAM layout with multiple levels, different metal deposition layers carry the conductor legs between the load devices versus the fly-over conductor bypassing the nearer subset.
摘要翻译：通过分离距离信号源更远的负载装置的子集，并通过飞越导体将更远的子集耦合到信号，改善了通过沿导体顺序耦合的多个负载装置的信号的传播延迟，绕过更靠近信号源的子集。该技术适用于耦合到给定字线的随机存取存储器（SRAM）中的位单元的子集，或者适用于顺序耦合到选通信号的字线解码器门，以及其他可选择作为一组的负载装置的电路通过靠近信号源将其划分为子集。在具有多个级别的SRAM布局中，不同的金属沉积层承载负载装置之间的导体腿与绕过更近的子集的飞越导体。

5. 发明申请

US20120188838A1 MEMORY WITH WORD-LINE SEGMENT ACCESS 有权
标题翻译：使用WORD-LINE SEGMENT访问的记忆
公开(公告)号：US20120188838A1
公开(公告)日：2012-07-26
申请号：US13010039
申请日：2011-01-20
申请人： Chiting Cheng , Hsiu-Feng Peng , Ming-Zhang Kuo , Chung-Cheng Chou
发明人： Chiting Cheng , Hsiu-Feng Peng , Ming-Zhang Kuo , Chung-Cheng Chou
IPC分类号： G11C8/08
CPC分类号： G11C8/08 , G11C7/12 , G11C8/14 , G11C11/418 , G11C11/419
摘要： A memory comprises a row of bit cells, including a first plurality of bit cells and a second plurality of bit cells. A first word line segment driver is connected to the first plurality of bits cells. A second word line segment driver is connected to the second plurality of bits cells. The first and second word line segment drivers are selectively operable for activating one of the first and second pluralities of bit cells at a time to the exclusion of the other plurality of bit cells. A shared sense amplifier is coupled to at least one of the first plurality of bit cells and at least one of the second plurality of bit cells. The shared sense amplifier is configured to receive signals from whichever of the one first or second bit cell is activated by its respective word line segment driver at a given time.
摘要翻译：存储器包括一行比特单元，包括第一多个比特单元和第二多个比特单元。第一字线段驱动器连接到第一多个位单元。第二字线段驱动器连接到第二多个位单元。第一和第二字线段驱动器被选择性地可操作用于一次激活第一和第二多个位单元之一以排除其他多个位单元。共享读出放大器耦合到第一多个位单元和第二多个位单元中的至少一个位单元中的至少一个。共享读出放大器被配置为在给定时间从其相应的字线段驱动器接收由一个第一或第二位单元中的哪一个激活的信号。

6. 发明申请

US20120307574A1 SRAM READ and WRITE Assist Apparatus 有权
标题翻译： SRAM读写功能
公开(公告)号：US20120307574A1
公开(公告)日：2012-12-06
申请号：US13149611
申请日：2011-05-31
申请人： Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
发明人： Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
IPC分类号： G11C7/00
CPC分类号： G11C11/419
摘要： A SRAM READ and WRITE assist apparatus comprises a bit line voltage tracking block, a READ assist timer, a READ assist unit, a WRITE assist unit a WRITE control unit. The bit line voltage tracking block detects a voltage on a tracking bit line coupled to a plurality of tracking memory cells. In response to the voltage drop on the tracking bit line, the READ assist timer generates a READ assist pulse. When the READ assist pulse has a logic high state, an activated word line is pulled down to a lower voltage. Such a lower voltage helps to improve the robustness of SRAM memory circuits so as to avoid READ and WRITE failures.
摘要翻译： SRAM读写辅助装置包括位线电压跟踪块，READ辅助定时器，READ辅助单元，WRITE辅助单元，WRITE控制单元。位线电压跟踪块检测耦合到多个跟踪存储器单元的跟踪位线上的电压。响应于跟踪位线上的电压降，READ辅助定时器产生READ辅助脉冲。当READ辅助脉冲具有逻辑高电平状态时，激活的字线被下拉到较低的电压。这样较低的电压有助于提高SRAM存储器电路的鲁棒性，以避免读取和写入故障。

7. 发明授权

US08630132B2 SRAM read and write assist apparatus 有权
标题翻译： SRAM读写辅助装置
公开(公告)号：US08630132B2
公开(公告)日：2014-01-14
申请号：US13149611
申请日：2011-05-31
申请人： Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
发明人： Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
IPC分类号： G11C7/22
CPC分类号： G11C11/419
摘要： A SRAM READ and WRITE assist apparatus comprises a bit line voltage tracking block, a READ assist timer, a READ assist unit, a WRITE assist unit a WRITE control unit. The bit line voltage tracking block detects a voltage on a tracking bit line coupled to a plurality of tracking memory cells. In response to the voltage drop on the tracking bit line, the READ assist timer generates a READ assist pulse. When the READ assist pulse has a logic high state, an activated word line is pulled down to a lower voltage. Such a lower voltage helps to improve the robustness of SRAM memory circuits so as to avoid READ and WRITE failures.
摘要翻译： SRAM读写辅助装置包括位线电压跟踪块，READ辅助定时器，READ辅助单元，WRITE辅助单元，WRITE控制单元。位线电压跟踪块检测耦合到多个跟踪存储器单元的跟踪位线上的电压。响应于跟踪位线上的电压降，READ辅助定时器产生READ辅助脉冲。当READ辅助脉冲具有逻辑高电平状态时，激活的字线被下拉到较低的电压。这样较低的电压有助于提高SRAM存储器电路的鲁棒性，以避免读取和写入故障。

8. 发明授权

US08437215B2 Memory with word-line segment access 有权
标题翻译：具有字段段访问的存储器
公开(公告)号：US08437215B2
公开(公告)日：2013-05-07
申请号：US13010039
申请日：2011-01-20
申请人： Chiting Cheng , Hsiu-Feng Peng , Ming-Zhang Kuo , Chung-Cheng Chou
发明人： Chiting Cheng , Hsiu-Feng Peng , Ming-Zhang Kuo , Chung-Cheng Chou
IPC分类号： G11C8/00
CPC分类号： G11C8/08 , G11C7/12 , G11C8/14 , G11C11/418 , G11C11/419
摘要： A memory comprises a row of bit cells, including a first plurality of bit cells and a second plurality of bit cells. A first word line segment driver is connected to the first plurality of bits cells. A second word line segment driver is connected to the second plurality of bits cells. The first and second word line segment drivers are selectively operable for activating one of the first and second pluralities of bit cells at a time to the exclusion of the other plurality of bit cells. A shared sense amplifier is coupled to at least one of the first plurality of bit cells and at least one of the second plurality of bit cells. The shared sense amplifier is configured to receive signals from whichever of the one first or second bit cell is activated by its respective word line segment driver at a given time.
摘要翻译：存储器包括一行比特单元，包括第一多个比特单元和第二多个比特单元。第一字线段驱动器连接到第一多个位单元。第二字线段驱动器连接到第二多个位单元。第一和第二字线段驱动器被选择性地可操作用于一次激活第一和第二多个位单元之一以排除其他多个位单元。共享读出放大器耦合到第一多个位单元和第二多个位单元中的至少一个位单元中的至少一个。共享读出放大器被配置为在给定时间从其相应的字线段驱动器接收由一个第一或第二位单元中的哪一个激活的信号。

9. 发明申请

US20130051128A1 FLY-OVER CONDUCTOR SEGMENTS IN INTEGRATED CIRCUITS WITH SUCCESSIVE LOAD DEVICES ALONG A SIGNAL PATH 有权
标题翻译：集成电路中的FLY-OVER导体部分与信号路径中的连续负载设备
公开(公告)号：US20130051128A1
公开(公告)日：2013-02-28
申请号：US13221081
申请日：2011-08-30
申请人： Hsiao-Wen Lu , Wei-Jer Hsieh , Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
发明人： Hsiao-Wen Lu , Wei-Jer Hsieh , Chiting Cheng , Chung-Cheng Chou , Jonathan Tsung-Yung Chang
IPC分类号： G11C11/00 , H02J1/00 , H03H11/26 , G11C7/00
CPC分类号： G11C5/063 , G11C11/413 , Y10T307/445
摘要： The propagation delay of a signal through multiple load devices coupled sequentially along a conductor is improved by separating a subset of the load devices that is more distant from the signal source, and coupling the more distant subset to the signal through a fly-over conductor that bypasses the subset that is nearer to the signal source. The technique is applicable to subsets of bit cells in a random access memory (SRAM) coupled to a given word line, or to word line decoder gates coupled sequentially to a strobe signal, as well as other circuits wherein load devices selectable as a group can be divided into subsets by proximity to the signal source. In an SRAM layout with multiple levels, different metal deposition layers carry the conductor legs between the load devices versus the fly-over conductor bypassing the nearer subset.
摘要翻译：通过分离距离信号源更远的负载装置的子集，并通过飞越导体将更远的子集耦合到信号，改善了通过沿导体顺序耦合的多个负载装置的信号的传播延迟，绕过更靠近信号源的子集。该技术适用于耦合到给定字线的随机存取存储器（SRAM）中的位单元的子集，或者适用于顺序耦合到选通信号的字线解码器门，以及其他可选择作为一组的负载装置的电路通过靠近信号源将其划分为子集。在具有多个级别的SRAM布局中，不同的金属沉积层承载负载装置之间的导体腿与绕过更近的子集的飞越导体。

10. 发明申请

US20130069236A1 EFFICIENT SEMICONDUCTOR DEVICE CELL LAYOUT UTILIZING UNDERLYING LOCAL CONNECTIVE FEATURES 有权
标题翻译：有效的半导体器件细胞布局利用本地连接特性
公开(公告)号：US20130069236A1
公开(公告)日：2013-03-21
申请号：US13238294
申请日：2011-09-21
申请人： Jung-Hsuan Chen , May Chang , Chiting Cheng , Li-Chun Tien
发明人： Jung-Hsuan Chen , May Chang , Chiting Cheng , Li-Chun Tien
IPC分类号： H01L23/52 , G06F17/50
CPC分类号： H01L27/0207 , H01L2027/11859
摘要： Provided are semiconductor device cells, methods for forming the semiconductor device cells and a layout style for the semiconductor device cells. The device cells may be repetitive cells used throughout an integrated circuit. The layout style utilizes an area at the polysilicon level that is void of polysilicon and which can accommodate conductive leads therein or thereover. The conductive leads are formed of material typically used for contacts or vias and are disposed beneath the first metal interconnect level which couples device cells to one another. The subjacent local conductive leads may form subjacent signal lines allowing for additional power mesh lines to be included within the limited number of metal tracks that can be accommodated within a device cell and in accordance with metal track design spacing rules.
摘要翻译：提供半导体器件单元，用于形成半导体器件单元的方法和用于半导体器件单元的布局样式。器件单元可以是整个集成电路中使用的重复单元。布局样式利用多晶硅级别的无多晶硅的区域，并且其可以容纳其中或其中的导电引线。导电引线由通常用于触点或通孔的材料形成，并且设置在将器件单元彼此耦合的第一金属互连级之下。下面的局部导电引线可以形成下面的信号线，允许额外的功率网线被包括在可以容纳在器件单元内并根据金属轨道设计间隔规则的有限数量的金属轨道内。

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