会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Film removing method and film removing agent
    • 薄膜去除方法和除膜剂
    • US5632847A
    • 1997-05-27
    • US427309
    • 1995-04-24
    • Reiko OhnoTerumi Matsuoka
    • Reiko OhnoTerumi Matsuoka
    • B08B3/08B29C63/00G03F1/00G03F1/68H01L21/027H01L21/304H01L21/308H01L21/311B32B35/00
    • H01L21/31133B29C63/0013B29L2031/3061Y10S134/902Y10T156/1126Y10T156/1922
    • The method of removing a film from a substrate (wafer) comprises a step of injecting ozone (13) into an acid aqueous solution (12) (e.g., a mixed liquid of dilute hydrogen fluoride aqueous solution and dilute hydrochloric acid); and a step of bringing bubbles (18) formed by the ozone injection step into contact with a film (17) (e.g., organic or metal contaminated film) adhering on to the substrate to remove the film (17) from the substrate (16). Therefore, the organic film or metal contaminated film adhering onto the substrate surface can be removed easily and effectively. Further, the film removing agent is bubbles formed when ozone (13) is injected into an acid aqueous solution. Each bubble is composed of an inside ozone bubble and an outside acid aqueous solution bubble. Therefore, when the bubbles are brought into contact with the film, an intermediate between ozone and the film is first formed, and then the formed intermediate can be removed from the substrate by the acid aqueous solution.
    • 从基板(晶片)中除去膜的方法包括将臭氧(13)注入酸性水溶液(12)(例如稀氟化氢水溶液和稀盐酸的混合液)中的步骤; 以及将通过臭氧注入步骤形成的气泡(18)与附着在基板上的膜(17)(例如有机或金属污染膜)接触以从基板(16)去除膜(17)的步骤, 。 因此,可以容易且有效地除去附着在基板表面上的有机膜或金属污染膜。 此外,除去膜是在将臭氧(13)注入酸性水溶液时形成的气泡。 每个气泡由内部臭氧气泡和外部酸性水溶液气泡组成。 因此,当使气泡与膜接触时,首先形成臭氧与膜之间的中间体,然后通过酸性水溶液将形成的中间体从基板除去。
    • 4. 发明授权
    • Brine treatment method
    • 盐水处理方法
    • US5578218A
    • 1996-11-26
    • US514624
    • 1995-08-14
    • Terumi MatsuokaMasahiro OharaIzumi Kawamura
    • Terumi MatsuokaMasahiro OharaIzumi Kawamura
    • B01D15/04B01J41/04C01D3/16C01F5/30C01F11/32C02F1/42
    • C01D3/16C01F11/32C01F5/30
    • In a brine treatment method of removing sulfate ions from sulfate-ion contained brine, sulfate-ion contained brine is brought into dispersive contact with granular ion exchange resin carrying zirconium hydrous oxide thereon in a fluid state under an acidic condition to thereby cause the sulfate ions to be adsorbed by the ion exchange resin and removed from the brine, then the granular ion exchange resin is washed with aqueous solution whose pH value is equal to or lower than a pH value in the adsorbing step, thereby removing chloride ions from the granular ion exchange resin, then in a fluid state, the granular ion exchange resin adsorbing the sulfate ions is brought into dispersive contact with aqueous solution of pH value higher than the pH value in the adsorbing step, thereby desorbing the adsorbed sulfate ions from the granular ion exchange resin, and then the granular ion exchange resin is washed with water.
    • 在从含有硫酸根离子的盐水中除去硫酸根离子的盐水处理方法中,在酸性条件下,将含有硫酸根离子的盐水与流动状态的载有氧化锆水的粒状离子交换树脂分散接触,从而使硫酸根离子 被离子交换树脂吸附并从盐水中除去,然后用吸附步骤中pH值等于或低于pH值的水溶液洗涤粒状离子交换树脂,从而从颗粒离子中除去氯离子 在流体状态下,吸附硫酸根离子的粒状离子交换树脂与吸附工序中pH值以上的pH值分散接触,从而从粒状离子交换器吸附硫酸根离子 树脂,然后用水洗涤颗粒状离子交换树脂。
    • 5. 发明授权
    • Method for removing organic film
    • 去除有机膜的方法
    • US5378317A
    • 1995-01-03
    • US110646
    • 1993-08-23
    • Masaharu KashiwaseTerumi Matsuoka
    • Masaharu KashiwaseTerumi Matsuoka
    • G03F7/42H01L21/311H01L21/312
    • G03F7/423H01L21/31133Y10S438/98
    • The method for removing organic film according to the present invention is very effective for removing a photo resist film in a process for manufacturing semiconductor device. A substrate (32) having a photo resist film (31) formed on it is processed in a wet processing tank (34) filled with a processing solution such as a mixed solution containing sulfuric acid and hydrogen peroxide or by a dry processing using oxygen plasma. Then, it is processed in an ozone processing tank (34) filled with a solution where ozone or ozone water has been infused, and the organic film is removed.
    • PCT No.PCT / JP91 / 01374 Sec。 371日期:1992年6月8日 102(e)日期1992年6月8日PCT 1991年10月9日PCT PCT。 出版物WO92 / 06489 日期:1992年4月16日。根据本发明的除去有机膜的方法在半导体器件的制造工艺中去除光致抗蚀剂膜是非常有效的。 在其上形成有光致抗蚀剂膜(31)的基板(32)在填充有诸如含有硫酸和过氧化氢的混合溶液等处理溶液的湿处理槽(34)中进行处理,或者使用氧等离子体 。 然后,在填充有输入了臭氧或臭氧水的溶液的臭氧处理槽(34)中进行处理,除去有机膜。