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1. 发明授权

US09213234B2 Photosensitive material and method of lithography 有权
标题翻译：感光材料和光刻方法
公开(公告)号：US09213234B2
公开(公告)日：2015-12-15
申请号：US13486697
申请日：2012-06-01
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： G03F7/004 , G03F7/11
CPC分类号： G03F7/16 , G03F7/0045 , G03F7/0046 , G03F7/11
摘要： Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.
摘要翻译：感光材料和形成图案的方法，其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。在一个实例中，感光层包括具有氟原子的第一组分（例如，氟烷基）。在形成感光层之后，第一部件漂浮到感光层的顶表面。此后，对感光层进行图案化。

2. 发明授权

US08908181B2 Overlay mark and method of measuring the same 有权
标题翻译：叠加标记和测量方法
公开(公告)号：US08908181B2
公开(公告)日：2014-12-09
申请号：US13536855
申请日：2012-06-28
申请人： Chen-Yu Chen , Ming-Feng Shieh , Ching-Yu Chang
发明人： Chen-Yu Chen , Ming-Feng Shieh , Ching-Yu Chang
IPC分类号： G01B11/00
CPC分类号： H01L23/544 , G03F7/70633 , G03F7/70683 , H01L21/302 , H01L29/0649 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A device having an overlay mark over a substrate and a method of adjusting multi-layer overlay alignment using the overlay mark for accuracy are disclosed. The overlay mark includes a first feature in a first layer, having a plurality of first alignment segments substantially parallel to each other extending only along an X direction; a second feature in a second layer over the first layer, having a plurality of second alignment segments substantially parallel to each other extending along a Y direction different from the X direction; and a third feature in a third layer over the second layer, having a plurality of third alignment segments substantially parallel to each other extending along the X direction and a plurality of fourth alignment segments substantially parallel to each other extending along the Y direction.
摘要翻译：公开了一种在衬底上具有覆盖标记的器件以及使用覆盖标记来精确调整多层覆盖对准的方法。覆盖标记包括第一层中的第一特征，具有基本上彼此平行的多个第一对准段，其仅沿着X方向延伸; 在第一层上的第二层中的第二特征，具有沿着与X方向不同的Y方向彼此平行的多个第二对准段; 以及在第二层上的第三层中的第三特征，具有沿着X方向彼此基本平行的多个第三对准段和沿Y方向延伸的彼此大致平行的多个第四对准段。

3. 发明授权

US08795540B2 Selective bias compensation for patterning steps in CMOS processes 有权
标题翻译： CMOS工艺中图案化步骤的选择性偏置补偿
公开(公告)号：US08795540B2
公开(公告)日：2014-08-05
申请号：US13335618
申请日：2011-12-22
申请人： Ming-Feng Shieh , Ching-Yu Chang
发明人： Ming-Feng Shieh , Ching-Yu Chang
IPC分类号： C03C15/00 , H01L21/033
CPC分类号： H01L21/0337 , H01L21/0273
摘要： A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern.
摘要翻译：一种方法包括形成光致抗蚀剂图案，并对光致抗蚀剂图案的第一部分进行曝光，其中光致抗蚀剂图案的第二部分不暴露于光。在光致抗蚀剂图案的第一部分和第二部分上涂覆光酸反应性材料。光酸反应性材料与光致抗蚀剂图案反应形成膜。然后除去与光致抗蚀剂图案不反应的光酸反应性材料的部分，并且将膜留在光致抗蚀剂图案上。

4. 发明授权

US08609325B2 Method of lithography 有权
标题翻译：光刻方法
公开(公告)号：US08609325B2
公开(公告)日：2013-12-17
申请号：US12915270
申请日：2010-10-29
申请人： Fong-Cheng Lee , Ching-Yu Chang
发明人： Fong-Cheng Lee , Ching-Yu Chang
IPC分类号： G03F7/26
CPC分类号： G03F7/2002 , G03F7/11 , G03F7/16 , G03F7/167 , G03F7/20
摘要： A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.
摘要翻译：公开了一种制造集成电路的光刻方法。在基板上形成光取向层。进行处理以重新组织和对准光对准分子。光致抗蚀剂层可以形成在双层分离涂层中的光取向层上，或者在结合结合结构中形成在光取向层中。

5. 发明申请

US20130260311A1 PHOTOSENSITIVE MATERIAL AND METHOD OF PHOTOLITHOGRAPHY 有权
标题翻译：感光材料和光刻方法
公开(公告)号：US20130260311A1
公开(公告)日：2013-10-03
申请号：US13437674
申请日：2012-04-02
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/2041 , G03F7/26 , G03F7/325
摘要： Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.
摘要翻译：描述了涉及感光材料在负色调显影剂中的溶解度的方法和材料。感光材料可以包括大于50％的酸不稳定基团作为聚合物链的分支。在另一个实施方案中，在曝光或照射之后对感光材料进行处理。示例性的处理包括将基底施加到感光材料上。

6. 发明申请

US20130244434A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130244434A1
公开(公告)日：2013-09-19
申请号：US13418589
申请日：2012-03-13
申请人： Kuei-Liang Lu , Ming-Feng Shieh , Ching-Yu Chang
发明人： Kuei-Liang Lu , Ming-Feng Shieh , Ching-Yu Chang
IPC分类号： H01L21/312
CPC分类号： H01L21/0332 , H01L21/31058 , H01L21/31144 , H01L21/76802 , H01L21/76819 , H01L21/76837
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括在衬底上形成多个电路器件。该方法包括在衬底上形成有机层。有机层形成在多个电路装置上。该方法包括抛光有机层以使有机层的表面平坦化。有机层在抛光之前不需要进行热处理。有机材料在抛光期间是未交联的。该方法包括在有机层的平坦化表面上沉积LT膜。沉积在小于约150摄氏度的温度下进行。也可以不使用旋涂法进行沉积。该方法包括在LT膜上形成图案化的光致抗蚀剂层。

7. 发明授权

US07972761B2 Photoresist materials and photolithography process 有权
标题翻译：光刻胶材料和光刻工艺
公开(公告)号：US07972761B2
公开(公告)日：2011-07-05
申请号：US11462413
申请日：2006-08-04
申请人： Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
发明人： Hsien-Cheng Wang , Chin-Hsiang Lin , H. J. Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/30 , G03F7/38 , G03F7/70858 , Y10S430/106 , Y10S430/111
摘要： A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
摘要翻译：用于光刻处理的材料包括响应于与酸的反应而变成可溶于碱溶液的聚合物和多个具有磁性元素的磁放大发生器（MAG），并分别与磁性元件形成酸结合响应辐射能量。

8. 发明授权

US07927779B2 Water mark defect prevention for immersion lithography 有权
标题翻译：浸渍光刻防水标识缺陷
公开(公告)号：US07927779B2
公开(公告)日：2011-04-19
申请号：US11271639
申请日：2005-11-10
申请人： Ching-Yu Chang
发明人： Ching-Yu Chang
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039
CPC分类号： G03F7/2041 , G03F7/004 , G03F7/0045 , G03F7/0392
摘要： A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
摘要翻译：一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

9. 发明申请

US20110059396A1 PATTERNING PROCESS AND CHEMICAL AMPLIFIED PHOTORESIST WITH A PHOTODEGRADABLE BASE 有权
标题翻译：具有可光控基座的图案处理和化学放大光电
公开(公告)号：US20110059396A1
公开(公告)日：2011-03-10
申请号：US12555145
申请日：2009-09-08
申请人： Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
发明人： Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/114 , Y10S430/12 , Y10S430/128
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.
摘要翻译：公开了一种用于制造集成电路器件的方法。该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包含可光降解的基材; 并暴露第二材料层的至少一部分。

10. 发明申请

US20100285410A1 Method For Manufacturing A Semiconductor Device Using A Modified Photosensitive Layer 有权
标题翻译：使用改性光敏层制造半导体器件的方法
公开(公告)号：US20100285410A1
公开(公告)日：2010-11-11
申请号：US12463501
申请日：2009-05-11
申请人： Chien-Wei Wang , Ching-Yu Chang
发明人： Chien-Wei Wang , Ching-Yu Chang
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/266 , H01L21/31133 , H01L21/31138
摘要： The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.
摘要翻译：本公开提供了一种用于制造半导体器件的方法。该方法包括在基底上涂覆光致抗蚀剂。光致抗蚀剂暴露于辐射。辐射曝光的光致抗蚀剂被烘烤。辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。用处理材料处理图像图案。对基板和经处理的图像图案执行离子注入工艺。图案图案从基板剥离。处理材料的碳原子比小于光致抗蚀剂的碳原子比。

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