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1. 发明授权

US06291112B1 Method of automatically forming a rim phase shifting mask 有权
标题翻译：自动形成轮辋相移掩模的方法
公开(公告)号：US06291112B1
公开(公告)日：2001-09-18
申请号：US09191762
申请日：1998-11-13
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G03F900
CPC分类号： G03F1/29
摘要： A method of automatically forming a rim PSM is provided. A first pattern comprising a conventional original pattern as a blinding layer and assist features around the conventional circuit pattern is designed. A portion of a Cr film and a portion of a phase shifting layer under the Cr film are removed with the first pattern. The removed portion of the Cr film and the removed portion of the phase shifting layer are positioned on the assist feature. A second pattern comprising the conventional circuit pattern and a half of the assist features is designed. A portion of the Cr film in positions other than on the second pattern is removed. The convention circuit pattern formed at the mask medium is defined as the blinding layer. The area of the assist features only comprise a quartz substrate that light can pass through. The other areas of the mask medium wherein the phase shifting layer remains is defined as the phase-shifting portion of the PSM.
摘要翻译：提供了一种自动形成边缘PSM的方法。设计了包括常规原始图案作为盲目层并且围绕常规电路图案的辅助特征的第一图案。利用第一图案除去Cr膜的一部分和在Cr膜下面的部分相移层。 Cr膜的去除部分和移相层的去除部分位于辅助特征上。设计包括常规电路图案和辅助特征的一半的第二图案。除去在第二图案之外的位置中的Cr膜的一部分。形成在掩模介质上的常规电路图形被定义为盲目层。辅助特征的区域仅包括光可以通过的石英衬底。其中相移层保留的掩模介质的其它区域被定义为PSM的相移部分。

2. 发明授权

US06251564B1 Method for forming a pattern with both logic-type and memory-type circuit 有权
标题翻译：用逻辑型和存储型电路形成图案的方法
公开(公告)号：US06251564B1
公开(公告)日：2001-06-26
申请号：US09312968
申请日：1999-05-17
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G03C500
CPC分类号： G03F7/70466 , G03F7/203
摘要： A method for forming a pattern with both a logic-type and, a memory-type circuit is disclosed. The method includes first providing a wafer which includes a photoresist layer, then covering the photoresist layer with a first mask including an opaque area and a first pattern area. Forming a first pattern on the photoresist layer by a first exposure. Covering the photoresist layer with a second mask after the first mask is removed. Moreover, a second pattern is printed on the photoresist layer by a second exposure. Finally, the second mask is removed. The double-exposure method will enhance the resolution of the pattern defined on the photoresist layer.
摘要翻译：公开了一种用于形成具有逻辑类型和存储器型电路的图案的方法。该方法包括首先提供包括光致抗蚀剂层的晶片，然后用包括不透明区域和第一图案区域的第一掩模覆盖光致抗蚀剂层。通过第一次曝光在光致抗蚀剂层上形成第一图案。在去除第一掩模之后用第二掩模覆盖光致抗蚀剂层。此外，通过第二曝光将第二图案印刷在光致抗蚀剂层上。最后，删除第二个掩码。双曝光方法将增强在光致抗蚀剂层上限定的图案的分辨率。

3. 发明授权

US6165693A Method of designing an assist feature 有权
标题翻译：设计辅助功能的方法
公开(公告)号：US6165693A
公开(公告)日：2000-12-26
申请号：US135434
申请日：1998-08-17
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/36
摘要： For a dense-line mask pattern, if the ratio of space width to line width is larger than 2.0 and the size of the line width is less than the exposure wave length, or for an iso-line mask pattern, if the size of the line width is less than the exposure wave length, assist features should be added and OAI should be used to increase the process window. For a dense-line mask pattern, if the ratio of space width to line width is smaller than 2.0, or for an iso-line mask pattern, if the size of the line width is larger than the exposure wavelength, no assist feature should be added.
摘要翻译：对于密集线掩模图案，如果空间宽度与线宽的比率大于2.0，并且线宽的尺寸小于曝光波长，或者对于等线掩模图案，如果尺寸线宽小于曝光波长，应添加辅助功能，并应使用OAI增加工艺窗口。对于密集线掩模图案，如果空间宽度与线宽的比率小于2.0，或者对于等线掩模图案，如果线宽的大小大于曝光波长，则不应该有辅助特征添加。

4. 发明授权

US06013397A Method for automatically forming a phase shifting mask 有权
标题翻译：自动形成相移掩模的方法
公开(公告)号：US06013397A
公开(公告)日：2000-01-11
申请号：US186127
申请日：1998-11-04
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G03F1/26 , G03F1/36 , G03F9/00
CPC分类号： G03F1/26 , G03F1/36
摘要： A method for automatically forming a sub-resolution PSM is provided. The shielding layer is designed by adding an assist feature to a peripheral region of an original shielding layer formed on a quartz substrate. Using an etching process with a etching mask, a portion of the original shielding layer is removed to form an original pattern and an assist feature. The assist feature is separated from the original pattern by a distance. A photoresist layer is tormed on the rim of the shielding layer so that the original pattern, half of the assist feature, and an exposed portion of the quartz substrate between the original pattern and the assist feature are exposed. A selective etching process is performed to etch the exposed portion of the quartz substrate to a certain depth so that it behaves like a phase shifting layer. After removing the photoresist layer, the sub-resolution PSM including the integrated circuit pattern and the assist feature is complete.
摘要翻译：提供了一种自动形成子分辨率PSM的方法。通过向形成在石英基板上的原始屏蔽层的外围区域添加辅助特征来设计屏蔽层。使用具有蚀刻掩模的蚀刻工艺，去除原始屏蔽层的一部分以形成原始图案和辅助特征。辅助功能与原始图案分开一段距离。光致抗蚀剂层被置于屏蔽层的边缘上，使原始图案（辅助特征的一半）和原始图案与辅助特征之间的石英基板的暴露部分露出。执行选择性蚀刻处理以将石英衬底的暴露部分蚀刻到一定深度，使得其表现为类似于移相层。在去除光致抗蚀剂层之后，包括集成电路图案和辅助特征的子分辨率PSM完成。

5. 发明授权

US6087049A Mixed mode photomask for optical proximity correction in a lithographic process 有权
标题翻译：用于光刻过程中的光学邻近校正的混合模式光掩模
公开(公告)号：US6087049A
公开(公告)日：2000-07-11
申请号：US457119
申请日：1999-12-07
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G03F1/00 , G03F1/26 , G03F1/36 , G03F7/20 , G03F9/00
CPC分类号： G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433 , G03F7/70441
摘要： A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be -transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.
摘要翻译：适用于混合模式光掩模的光学邻近校正方法。原始模式将从混合模式光掩模传输。获得反映光掩模的关键尺寸与原始图案之间的关系的二进制掩模曲线和相移掩模曲线。选择关键维度的临界值。对于二进制掩模曲线，选择原始图案的临界尺寸大于临界值的部分。相反，对于相移掩模曲线，选择原始图案的临界尺寸小于临界值的部分。将这两个部分组合为光学特性曲线。因此可以根据光学特性曲线制造混合模式光掩模。

6. 发明授权

US6064485A Method of optical proximity correction 有权
公开(公告)号：US6064485A
公开(公告)日：2000-05-16
申请号：US345168
申请日：1999-06-30
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G03F1/00 , G03F1/26 , G03F1/36 , G03F7/20 , G01N11/00
CPC分类号： G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433 , G03F7/70441
摘要： A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.

7. 发明授权

US6016201A Inspection method for a correction pattern 有权
标题翻译：校正模式的检查方法
公开(公告)号：US6016201A
公开(公告)日：2000-01-18
申请号：US135435
申请日：1998-08-17
申请人： Chin-Lung Lin , Yao-Ching Ku
发明人： Chin-Lung Lin , Yao-Ching Ku
IPC分类号： G01N21/956 , G01B11/00
CPC分类号： G01N21/95607
摘要： An inspection method for a correction pattern includes the following steps. An optical proximity correction is performed to an original pattern to obtain an optical proximity correction pattern. An "exclusive or" logic operation is done to the original pattern and the optical correction pattern to obtain an inspection pattern. The inspection pattern includes a number of kinds of line width sizing. The line width sizing of the inspection pattern is then compared with an optical correction reference size.
摘要翻译：校正图案的检查方法包括以下步骤。对原始图案进行光学邻近校正以获得光学邻近校正图案。对原始图案和光学校正图案进行“异或”逻辑运算以获得检查图案。检查图案包括多种线宽尺寸。然后将检查图案的线宽尺寸与光学校正参考尺寸进行比较。

8. 发明授权

US08375347B2 Driven metal critical dimension (CD) biasing 有权
标题翻译：驱动金属临界尺寸（CD）偏置
公开(公告)号：US08375347B2
公开(公告)日：2013-02-12
申请号：US12464578
申请日：2009-05-12
申请人： Louis Chao-Chiuan Liu , Lee-Chung Lu , Yao-Ching Ku
发明人： Louis Chao-Chiuan Liu , Lee-Chung Lu , Yao-Ching Ku
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5031 , G06F17/5036 , G06F17/5077 , G06F2217/84
摘要： A method of designing an integrated circuit (“IC”) is provided that includes placing an IC design, where the IC design includes a first element, a second element, and a path coupling the first and second elements, and routing the IC design. Further, the method includes obtaining at least one of resistivity data and capacitance data related to the path, and obtaining timing data related to the path. The method also includes using at least one of the resistivity data, the capacitance data, and the timing data to determine a critical dimension (“CD”) bias to be applied to the path, and modifying the IC design, where modifying includes applying the CD bias to the path.
摘要翻译：提供了一种设计集成电路（IC）的方法，其包括放置IC设计，其中IC设计包括第一元件，第二元件以及耦合第一和第二元件的路径，以及布线IC设计。此外，该方法包括获得与路径相关的电阻率数据和电容数据中的至少一个，并获得与该路径相关的定时数据。该方法还包括使用电阻率数据，电容数据和定时数据中的至少一个来确定要施加到路径的临界尺寸（CD）偏置，以及修改IC设计，其中修改包括应用CD偏差到路上

9. 发明申请

US20110231804A1 MODEL IMPORT FOR ELECTRONIC DESIGN AUTOMATION 有权
标题翻译：电子设计自动化模型进口
公开(公告)号：US20110231804A1
公开(公告)日：2011-09-22
申请号：US13116981
申请日：2011-05-26
申请人： Ru-Gun Liu , Chih-Ming Lai , Wen-Chun Huang , Boren Luo , I-Chang Shin , Yao-Ching Ku , Cliff Hou
发明人： Ru-Gun Liu , Chih-Ming Lai , Wen-Chun Huang , Boren Luo , I-Chang Shin , Yao-Ching Ku , Cliff Hou
IPC分类号： G06F17/50
CPC分类号： G06F17/50
摘要： Methods and systems for providing processing parameters in a secure format are disclosed. In one aspect, a method for providing semiconductor fabrication processing parameters to a design facility is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a model from the set of processing parameters; converting the model into a corresponding set of kernels; converting the set of kernels into a corresponding set of matrices; and communicating the set of matrices to the design facility. In another aspect, a method for providing semiconductor fabrication processing parameters is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a processing model from the set of processing parameters; encrypting the processing model into a format for use with a plurality of EDA tools; and communicating the encrypted processing model format to a design facility.
摘要翻译：公开了以安全格式提供处理参数的方法和系统。一方面，公开了一种向设计设备提供半导体制造处理参数的方法。该方法包括提供制造设施的一组处理参数; 从一组处理参数创建模型; 将模型转换为相应的一组内核; 将所述内核集合转换成相应的矩阵集合; 并将该组矩阵传送到设计设施。另一方面，公开了一种用于提供半导体制造处理参数的方法。该方法包括提供制造设施的一组处理参数; 从一组处理参数创建一个处理模型; 将处理模型加密成与多个EDA工具一起使用的格式; 并将加密的处理模型格式传送到设计设施。

10. 发明授权

US07778805B2 Regression system and methods for optical proximity correction modeling 有权
标题翻译：用于光学邻近校正建模的回归系统和方法
公开(公告)号：US07778805B2
公开(公告)日：2010-08-17
申请号：US11191849
申请日：2005-07-28
申请人： Wen Chun Huang , Ru-Gun Liu , Chih-Ming Lai , Chen Kun Tsai , Chien Wen Lai , Cherng-Shyan Tsay , Cheng Cheng Kuo , Yao-Ching Ku
发明人： Wen Chun Huang , Ru-Gun Liu , Chih-Ming Lai , Chen Kun Tsai , Chien Wen Lai , Cherng-Shyan Tsay , Cheng Cheng Kuo , Yao-Ching Ku
IPC分类号： G06F7/60 , G06F17/10
CPC分类号： G03F1/36 , G03F1/68
摘要： An optimized optical proximity correction modeling method comprises receiving a selection of a regression method, displaying regression parameters, receiving values for the displayed regression parameters, receiving a selection of an optimization method, displaying optimization parameters, receiving values for the displayed optimization parameters, and generating an optimized optical proximity correction output.
摘要翻译：优化的光学邻近校正建模方法包括接收回归方法的选择，显示回归参数，接收显示的回归参数的值，接收优化方法的选择，显示优化参数，接收显示的优化参数的值，以及生成优化的光学邻近校正输出。

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