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1. 发明授权

US08677290B2 Method of forming and using photolithography mask having a scattering bar structure 有权
标题翻译：具有散射棒结构的光刻掩模的形成和使用方法
公开(公告)号：US08677290B2
公开(公告)日：2014-03-18
申请号：US13277920
申请日：2011-10-20
申请人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
发明人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
IPC分类号： G03F1/36 , G03F1/80 , G06F17/50
CPC分类号： G03F1/36
摘要： A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.
摘要翻译：一种形成光刻掩模的方法，包括在掩模上形成第一线性非致密特征并形成基本上垂直于至少一个线性非致密设计特征设置的多个平行线性辅助特征。在一个实施例中，光刻掩模还包括基本横向于多个平行线性辅助特征设置的第一横向线性辅助特征。

2. 发明授权

US06596448B2 Phase error monitor pattern and application 有权
标题翻译：相位误差监测模式和应用
公开(公告)号：US06596448B2
公开(公告)日：2003-07-22
申请号：US09885895
申请日：2001-06-20
申请人： Chien-Wen Lai , Chemg-Shyan Tsay
发明人： Chien-Wen Lai , Chemg-Shyan Tsay
IPC分类号： G03F700
CPC分类号： G03F1/30 , G03F7/70283 , G03F7/70591 , G03F7/70616
摘要： A phase error monitor pattern and its related applications. The phase error monitor pattern includes an alternating phase shift pattern on the peripheries of an alternating phase shift mask and a modification pattern on the peripheries of a modification pattern. The alternating phase shift mask and the modification mask are used in sequence. The alternating phase shift pattern has a plurality of pairs of first non-transparent regions. Each pair of first non-transparent regions is located at each side of a phase shift region. The modification pattern has a plurality of second non-transparent regions. Each second non-transparent region corresponds in position to the non-transparent region on a first side of each pair of first non-transparent regions. The method of monitoring phase errors includes sequentially performing photo-exposure of a positive photoresist using the alternating phase shift mask and the modification mask and measuring the deviations of the monitor photoresist pattern. Finally, phase error of the alternating phase shift mask is deduced according to the measured shift and the defocusing of the exposure light source.
摘要翻译：相位误差监测模式及其相关应用。相位误差监视器模式包括在交变相移掩模的周边上的交替相移图案和修改图案的周边上的修改图案。依次使用交替相移掩模和修改掩模。交替相移图案具有多对第一非透明区域。每对第一非透明区域位于相移区域的每一侧。修改图案具有多个第二非透明区域。每个第二非透明区域对应于每对第一非透明区域的第一侧上的非透明区域的位置。监测相位误差的方法包括使用交变相移掩模和修改掩模顺序地执行正性光致抗蚀剂的光曝光并测量监测光致抗蚀剂图案的偏差。最后，根据测量的偏移和曝光光源的散焦来推导交变相移掩模的相位误差。

3. 发明授权

US06582858B2 Alternating phase shifting mask 有权
标题翻译：交替相移掩模
公开(公告)号：US06582858B2
公开(公告)日：2003-06-24
申请号：US09682480
申请日：2001-09-07
申请人： Chien-Wen Lai , Chien-Ming Wang , Feng-Yuan Chang , I-Hsiung Huang
发明人： Chien-Wen Lai , Chien-Ming Wang , Feng-Yuan Chang , I-Hsiung Huang
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/70
摘要： The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.
摘要翻译：本发明提供一种用于248nm光源的双曝光光刻工艺中的交替相移掩模（Alt-PSM）。 Alt-PSM包括：（1）石英基片; （2）衬底上的至少一条半致密线，其中半致密线与一侧的宽度大于2nm的透明区域相邻，另一侧与密集线图案相邻，狭窄的音调（3）第一相移区域，位于密集线图案和半致密线图案之间并且与半密集线相邻; 和（4）具有预定宽度的第二相移区域，其与半密度线相邻并且位于与第一相移区域相对的一侧上; 其中所述第一相移区域和所述第二相移区域之间的相位差为180度。

4. 发明申请

US20120040276A1 METHOD OF FORMING AND USING PHOTOLITHOGRAPHY MASK HAVING A SCATTERING BAR STRUCTURE 有权
标题翻译：形成和使用具有散射条结构的光刻胶掩模的方法
公开(公告)号：US20120040276A1
公开(公告)日：2012-02-16
申请号：US13277920
申请日：2011-10-20
申请人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
发明人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
IPC分类号： G03F7/20 , G03F1/36
CPC分类号： G03F1/36
摘要： A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.
摘要翻译：一种形成光刻掩模的方法，包括在掩模上形成第一线性非致密特征并形成基本上垂直于至少一个线性非致密设计特征设置的多个平行线性辅助特征。在一个实施例中，光刻掩模还包括基本横向于多个平行线性辅助特征设置的第一横向线性辅助特征。

5. 发明申请

US20090246648A1 Photolithography Scattering Bar Structure And Method 有权
标题翻译：光刻散射棒结构与方法
公开(公告)号：US20090246648A1
公开(公告)日：2009-10-01
申请号：US12480309
申请日：2009-06-08
申请人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
发明人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.
摘要翻译：光刻掩模包括位于掩模的隔离或半隔离区域中的设计特征以及基本垂直于设计特征设置的多个平行线性辅助特征。多个平行线性辅助特征可以包括设置在设计特征的第一侧并且垂直于其的第一系列平行辅助特征，以及设置在设计特征的第二侧上且垂直于其的第二系列平行辅助特征。

6. 发明申请

US20050279383A1 Automatic air-blown cleaning device for liquid crystal display component in LCD assembly and method thereof 有权
标题翻译： LCD组装液晶显示元件自动吹风清洗装置及其方法
公开(公告)号：US20050279383A1
公开(公告)日：2005-12-22
申请号：US11200434
申请日：2005-08-09
申请人： I-Min Chin , Chien-Wen Lai
发明人： I-Min Chin , Chien-Wen Lai
IPC分类号： B08B5/00 , G02F1/13 , G02F1/133 , G02F1/1333
CPC分类号： G02F1/1333 , G02F2001/1316
摘要： An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.
摘要翻译：一种用于在LCD组装过程中清洗液晶显示器（LCD）部件的自动吹风清洁装置。自动吹风清洁装置具有用于接收和组装液晶显示部件的组装站，用于将液晶显示部件输送到下一个组装站的输送装置和设置在输送装置上的空气过滤鼓风机。空气过滤鼓风机向液晶显示部件发送空气流以从液晶显示部件除去残留物。

7. 发明授权

US06489085B2 Thermal reflow photolithographic process 有权
标题翻译：热回流光刻工艺
公开(公告)号：US06489085B2
公开(公告)日：2002-12-03
申请号：US09742960
申请日：2000-12-20
申请人： I-Hsiung Huang , Anderson Chang , Chien-Wen Lai , Anseime Chen
发明人： I-Hsiung Huang , Anderson Chang , Chien-Wen Lai , Anseime Chen
IPC分类号： G03F740
CPC分类号： G03F7/40 , G03F7/038
摘要： A thermal flow photolithographic process. A thermal flow photoresist is provided. A cross-linking agent is added to the thermal flow photoresist to form a high-temperature cross-linking photoresist material. A substrate having an insulation layer thereon is provided. The high-temperature cross-linking photoresist is deposited over the insulation layer. The cross-linked photoresist layer on the insulation layer is exposed to light, chemically developed and then heated to cause thermal flow.
摘要翻译：热流光刻工艺。提供热流光致抗蚀剂。将交联剂添加到热流光致抗蚀剂中以形成高温交联光致抗蚀剂材料。提供其上具有绝缘层的基板。高温交联光刻胶沉积在绝缘层上。绝缘层上的交联光致抗蚀剂层暴露于光，化学显影，然后加热以引起热流。

8. 发明授权

US08048590B2 Photolithography mask having a scattering bar structure that includes transverse linear assist features 有权
标题翻译：具有包括横向线性辅助特征的散射棒结构的光刻掩模
公开(公告)号：US08048590B2
公开(公告)日：2011-11-01
申请号：US12480309
申请日：2009-06-08
申请人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
发明人： Yung-Sung Yen , Kuei Shun Chen , Chien-Wen Lai , Cherng-Shyan Tsay
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.
摘要翻译：光刻掩模包括位于掩模的隔离或半隔离区域中的设计特征以及基本垂直于设计特征设置的多个平行线性辅助特征。多个平行线性辅助特征可以包括设置在设计特征的第一侧并且垂直于其的第一系列平行辅助特征，以及设置在设计特征的第二侧上且垂直于其的第二系列平行辅助特征。

9. 发明授权

US06617081B2 Method for improving process window in semi-dense area by using phase shifter 失效
公开(公告)号：US06617081B2
公开(公告)日：2003-09-09
申请号：US09813048
申请日：2001-03-20
申请人： Chih-Yung Lin , Chien-Wen Lai
发明人： Chih-Yung Lin , Chien-Wen Lai
IPC分类号： G03F900
CPC分类号： G03F1/26 , G03F1/30
摘要： In accordance with the present invention, a method is provided for improving process window in semi-dense area by using a phase shifter. This method comprises a step of providing a transparent substrate. Then, at least two opaque regions are formed on the substrate. A phase shifter is formed in the substrate, wherein the phase shifter is formed in-between adjacent opaque regions. As a result, the phase shifter shifts the incident beam at an angle that reduces the proximity effect and improves the optical contrast and the depth of focus (DOF) to get wider process window.

10. 发明授权

US07778805B2 Regression system and methods for optical proximity correction modeling 有权
标题翻译：用于光学邻近校正建模的回归系统和方法
公开(公告)号：US07778805B2
公开(公告)日：2010-08-17
申请号：US11191849
申请日：2005-07-28
申请人： Wen Chun Huang , Ru-Gun Liu , Chih-Ming Lai , Chen Kun Tsai , Chien Wen Lai , Cherng-Shyan Tsay , Cheng Cheng Kuo , Yao-Ching Ku
发明人： Wen Chun Huang , Ru-Gun Liu , Chih-Ming Lai , Chen Kun Tsai , Chien Wen Lai , Cherng-Shyan Tsay , Cheng Cheng Kuo , Yao-Ching Ku
IPC分类号： G06F7/60 , G06F17/10
CPC分类号： G03F1/36 , G03F1/68
摘要： An optimized optical proximity correction modeling method comprises receiving a selection of a regression method, displaying regression parameters, receiving values for the displayed regression parameters, receiving a selection of an optimization method, displaying optimization parameters, receiving values for the displayed optimization parameters, and generating an optimized optical proximity correction output.
摘要翻译：优化的光学邻近校正建模方法包括接收回归方法的选择，显示回归参数，接收显示的回归参数的值，接收优化方法的选择，显示优化参数，接收显示的优化参数的值，以及生成优化的光学邻近校正输出。

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