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1. 发明申请

US20080054191A1 NOVEL WAFER REPAIR METHOD USING DIRECT-WRITING 有权
标题翻译：使用直写功能的新型波形修复方法
公开(公告)号：US20080054191A1
公开(公告)日：2008-03-06
申请号：US11934512
申请日：2007-11-02
申请人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
发明人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
IPC分类号： B05C11/00 , G21G5/00 , A61N5/00
CPC分类号： G03F7/7065 , G03F7/70383 , H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.
摘要翻译：晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

2. 发明申请

US20060148109A1 Novel wafer repair method using direct-writing 有权
标题翻译：使用直写的新型晶圆修复方法
公开(公告)号：US20060148109A1
公开(公告)日：2006-07-06
申请号：US11029992
申请日：2005-01-05
申请人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
发明人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
IPC分类号： H01L21/00 , G06K9/00
CPC分类号： G03F7/7065 , G03F7/70383 , H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.
摘要翻译：晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

3. 发明申请

US20060083997A1 Photomask with wavelength reduction material and pellicle 审中-公开
标题翻译：具有波长还原材料和防护薄膜的光掩模
公开(公告)号：US20060083997A1
公开(公告)日：2006-04-20
申请号：US11248070
申请日：2005-10-12
申请人： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
发明人： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
IPC分类号： A47G1/12 , G03F1/14 , G03F1/00
CPC分类号： G03F1/38
摘要： Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.
摘要翻译：公开了一种光掩模，其包括透明基板，靠近透明基板的吸收层和靠近透明基板安装的防护薄膜组件。吸收层具有形成在其中的至少一个开口用于接收波长减小材料（WRM）。波长减小材料和吸收层形成大致平坦的表面。

4. 发明申请

US20050100798A1 Device and method for providing wavelength reduction with a photomask 审中-公开
标题翻译：用光掩模提供波长缩小的装置和方法
公开(公告)号：US20050100798A1
公开(公告)日：2005-05-12
申请号：US10964842
申请日：2004-10-13
申请人： Burn Lin , Jeng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
发明人： Burn Lin , Jeng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
IPC分类号： G03C5/00 , G03F1/46 , G03F1/54 , G03F7/00 , G03F7/20 , G03F9/00 , H01L21/00
CPC分类号： G03F1/50 , G03F1/46
摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.
摘要翻译：公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

5. 发明申请

US20050042552A1 Method for manipulating the topography of a film surface 有权
标题翻译：操纵膜表面形貌的方法
公开(公告)号：US20050042552A1
公开(公告)日：2005-02-24
申请号：US10644356
申请日：2003-08-19
申请人： Tsai-Sheng Gau , Burn Lin
发明人： Tsai-Sheng Gau , Burn Lin
IPC分类号： G03F7/00 , G03F7/20 , G03F7/40
CPC分类号： G03F7/40 , G03F1/50 , G03F7/0035 , G03F7/2026
摘要： A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.
摘要翻译：一种用于选择性地改变辐射敏感聚合物层的厚度的方法，包括提供包括具有第一厚度形貌的至少一个辐射敏感聚合物层的基底; 使所述至少一个辐射敏感聚合物层通过具有预定辐射能透射率分布的掩模曝光，以选择性地将所述至少一个敏感聚合物层的预定区域暴露于预定的辐射能量剂量; 以及显影所述至少一个辐射敏感聚合物层以改变所述至少一个辐射敏感聚合物层的第一厚度形貌以产生第二厚度拓扑。

6. 发明申请

US20050286033A1 Immersion lithography system with wafer sealing mechanisms 有权
标题翻译：具有晶片密封机构的浸没光刻系统
公开(公告)号：US20050286033A1
公开(公告)日：2005-12-29
申请号：US10874982
申请日：2004-06-23
申请人： Burn Lin , Tsai-Sheng Gau , Chun-Kung Chen , Ru-Gun Liu , Shing Yu , Jen Shih
发明人： Burn Lin , Tsai-Sheng Gau , Chun-Kung Chen , Ru-Gun Liu , Shing Yu , Jen Shih
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/70808 , G03F7/70341
摘要： An immersion lithography system is disclosed to comprise a fluid containing feature for providing an immersion fluid for performing immersion lithography on a wafer, and a seal ring covering a predetermined portion of a wafer edge for preventing the immersion fluid from leaking through the covered portion of the wafer edge while the fluid is used for the immersion lithography.
摘要翻译：公开了一种浸没式光刻系统，其包括用于提供用于在晶片上进行浸没式光刻的浸没流体的流体容纳特征，以及覆盖晶片边缘的预定部分的密封环，用于防止浸没流体泄漏通过晶片边缘，同时流体用于浸没光刻。

7. 发明申请

US20070028206A1 Layout generation and optimization to improve photolithographic performance 有权
公开(公告)号：US20070028206A1
公开(公告)日：2007-02-01
申请号：US11193133
申请日：2005-07-29
申请人： Shou-Yen Chou , Jaw-Jung Shin , Tsai-Sheng Gau , Burn Lin
发明人： Shou-Yen Chou , Jaw-Jung Shin , Tsai-Sheng Gau , Burn Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Disclosed are a system and method for designing a mask layout. In one example, the method includes representing the mask layout using a plurality of pixels, each having a mask transmittance coefficient. A control parameter is initialized and a representative of the mask layout is generated. The method determines acceptance of the representative of the mask layout by a cost function and a Boltzmann factor, where the cost function is related to the mask layout and a target substrate pattern, and the Boltzmann factor is related to the cost function and the control parameter. The methods repeats the steps of generating the representative and determining acceptance until the mask layout is stabilized. The control parameter is decreased according to an annealing schedule. The generating, determining, repeating, and decreasing steps are reiterated until the mask layout is optimized.

8. 发明申请

US20070008508A1 Seal ring arrangements for immersion lithography systems 有权
标题翻译：浸没式光刻系统的密封环布置
公开(公告)号：US20070008508A1
公开(公告)日：2007-01-11
申请号：US11522611
申请日：2006-09-18
申请人： Burn Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Yu , Jen Shih
发明人： Burn Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Yu , Jen Shih
IPC分类号： G03B27/42
CPC分类号： G03F7/70341 , G03F7/707 , G03F7/70808
摘要： Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.
摘要翻译：公开了用于浸没式光刻系统的各种密封环装置。利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

9. 发明申请

US20050164098A1 System and method for processing masks with oblique features 有权
标题翻译：用倾斜特征处理掩模的系统和方法
公开(公告)号：US20050164098A1
公开(公告)日：2005-07-28
申请号：US10765531
申请日：2004-01-27
申请人： Burn Lin , Ping Yang , Hong Hsieh , Yao Ku , Chin-Hsiang Lin , Chiu Yoo
发明人： Burn Lin , Ping Yang , Hong Hsieh , Yao Ku , Chin-Hsiang Lin , Chiu Yoo
IPC分类号： G03C5/00 , G03F1/00 , G03F7/20 , G03F9/00 , H01L21/00
CPC分类号： G03F7/70425 , G03F1/72 , G03F1/76 , G03F1/84 , G03F7/70383 , G03F9/7003 , G03F9/7011 , G03F9/7046 , G03F9/7049
摘要： A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.
摘要翻译：公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。

10. 发明申请

US20070085034A1 Exposure method and apparatus for immersion lithography 有权
标题翻译：浸渍光刻的曝光方法和装置
公开(公告)号：US20070085034A1
公开(公告)日：2007-04-19
申请号：US11251330
申请日：2005-10-14
申请人： Ching-Yu Chang , Chin-Hsiang Lin , Burn Lin , David Lu
发明人： Ching-Yu Chang , Chin-Hsiang Lin , Burn Lin , David Lu
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70941
摘要： A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.
摘要翻译：一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理。

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