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1. 发明申请

US20080105926A1 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080105926A1
公开(公告)日：2008-05-08
申请号：US11738524
申请日：2007-04-23
申请人： Chin-Chuan Lai , Hsian-Kun Chiu , Yi-Pen Lin , Shu-Chen Yang
发明人： Chin-Chuan Lai , Hsian-Kun Chiu , Yi-Pen Lin , Shu-Chen Yang
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A thin film transistor and a fabrication method thereof are provided. First, a gate is formed on a substrate. Next, a gate insulating layer is formed to cover the gate and then a channel layer is formed on a portion of the gate insulating layer above the gate. Afterwards, a source and a drain are formed on the channel layer. The method of forming the gate includes forming a copper alloy layer containing nitrogen and a copper layer sequentially and then removing a portion of the copper alloy layer containing nitrogen and the copper layer. The source and the drain could be formed by the same fabrication method.
摘要翻译：提供薄膜晶体管及其制造方法。首先，在基板上形成栅极。接下来，形成栅极绝缘层以覆盖栅极，然后在栅极上方的栅极绝缘层的一部分上形成沟道层。之后，在沟道层上形成源极和漏极。形成栅极的方法包括依次形成含有氮和铜层的铜合金层，然后除去含有氮的铜合金层和铜层的一部分。源极和漏极可以通过相同的制造方法形成。

2. 发明授权

US07473642B2 Method for fabricating conductive layer 失效
标题翻译：导电层制造方法
公开(公告)号：US07473642B2
公开(公告)日：2009-01-06
申请号：US11761374
申请日：2007-06-12
申请人： Hsien-Kun Chiu , Chin-Chuan Lai , Yi-Pen Lin , Shu-Chen Yang
发明人： Hsien-Kun Chiu , Chin-Chuan Lai , Yi-Pen Lin , Shu-Chen Yang
IPC分类号： H01L21/44
CPC分类号： H05K3/182 , C23C18/1608 , C23C18/1653 , C25D5/56 , H01L21/2885 , H01L21/76838 , H01L27/124 , H05K3/064 , H05K2203/0709
摘要： A method for fabricating a conductive layer is provided. First, a substrate is provided and a patterned adhesion layer is formed on the substrate. Next, a chemical plating process is performed to form a first metal layer on the patterned adhesion layer by placing the substrate in an electroplating solution and the electroplating solution is shocked. Thereafter, a second metal layer is formed on the first metal layer by performing a plating process.
摘要翻译：提供一种制造导电层的方法。首先，提供基板，并且在基板上形成图案化的粘附层。接着，进行化学镀处理，通过将基板置于电镀液中而使电镀液被冲击而在图案化的粘合层上形成第一金属层。此后，通过进行电镀工艺在第一金属层上形成第二金属层。

3. 发明申请

US20080233739A1 METHOD FOR FABRICATING CONDUCTIVE LAYER 失效
标题翻译：制导导电层的方法
公开(公告)号：US20080233739A1
公开(公告)日：2008-09-25
申请号：US11761374
申请日：2007-06-12
申请人： Hsien-Kun Chiu , Chin-Chuan Lai , Yi-Pen Lin , Shu-Chen Yang
发明人： Hsien-Kun Chiu , Chin-Chuan Lai , Yi-Pen Lin , Shu-Chen Yang
IPC分类号： H01L21/44
CPC分类号： H05K3/182 , C23C18/1608 , C23C18/1653 , C25D5/56 , H01L21/2885 , H01L21/76838 , H01L27/124 , H05K3/064 , H05K2203/0709
摘要： A method for fabricating a conductive layer is provided. First, a substrate is provided and a patterned adhesion layer is formed on the substrate. Next, a chemical plating process is performed to form a first metal layer on the patterned adhesion layer by placing the substrate in an electroplating solution and the electroplating solution is shocked. Thereafter, a second metal layer is formed on the first metal layer by performing a plating process.
摘要翻译：提供一种制造导电层的方法。首先，提供基板，并且在基板上形成图案化的粘附层。接着，进行化学镀处理，通过将基板置于电镀液中而使电镀液被冲击而在图案化的粘合层上形成第一金属层。此后，通过进行电镀工艺在第一金属层上形成第二金属层。

4. 发明申请

US20070262379A1 Metal structure of glass substrate and formation thereof 审中-公开
标题翻译：玻璃基板的金属结构及其形成
公开(公告)号：US20070262379A1
公开(公告)日：2007-11-15
申请号：US11433439
申请日：2006-05-15
申请人： Chin-Chuan Lai , Hsian-Kun Chiu , Chuan-Yi Wu
发明人： Chin-Chuan Lai , Hsian-Kun Chiu , Chuan-Yi Wu
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/78603 , H01L29/4908 , H01L29/78609
摘要： Aluminum gate electrode parasitic resistance and capacitance delay suffers performance, and even makes the signal loss to high-resolution and small-size requests for thin film transistor liquid crystal display. An important technology employed in manufacturing thin film transistor is to convert surface of glass substrate into a silicon nitride layer, and subsequently to plate with one of low resistant copper, silver, copper alloy and silver alloy, and finally to form the thin film transistor on the substrate.
摘要翻译：铝栅极的寄生电阻和电容延迟受到性能的影响，甚至使得信号损耗达到高分辨率和小尺寸要求的薄膜晶体管液晶显示。用于制造薄膜晶体管的重要技术是将玻璃基板的表面转化为氮化硅层，然后用低电阻铜，银，铜合金和银合金之一进行平板化，最后形成薄膜晶体管底物。

5. 发明授权

US07858969B2 Organic thin film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07858969B2
公开(公告)日：2010-12-28
申请号：US11737769
申请日：2007-04-20
申请人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
发明人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/102 , H01L51/0022 , H01L51/0529 , H01L51/0545
摘要： An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.
摘要翻译：提供了包括基板，栅极，栅极绝缘体，粘合层，金属纳米颗粒层和有机半导体层的有机薄膜晶体管。栅极设置在基板上。栅极绝缘体设置在栅极和基板上。粘合剂层设置在栅极绝缘体上。此外，粘合剂层在浇口上方具有疏水表面，在疏水表面的两侧具有第一亲水表面和第二亲水表面。金属纳米粒子层的表面被亲水基团改性，金属纳米粒子层分别作为源极和漏极设置在粘合剂层的第一和第二亲水表面上。有机半导体层设置在粘合层的疏水性表面和金属纳米粒子层上。

6. 发明授权

US07229863B2 Method for fabricating thin film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07229863B2
公开(公告)日：2007-06-12
申请号：US11163602
申请日：2005-10-25
申请人： Chuan-Yi Wu , Yung-Chia Kuan , Chia-Chien Lu , Chin-Chuan Lai
发明人： Chuan-Yi Wu , Yung-Chia Kuan , Chia-Chien Lu , Chin-Chuan Lai
IPC分类号： H01L21/84
CPC分类号： H01L29/41733 , H01L29/458 , H01L29/66742 , Y10S438/906
摘要： A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer are formed on the patterned semiconductor layer in sequence. The second conductive layer is patterned such that each side of thereof above the gate has a taper profile and the first conductive layer is exposed. A first plasma process is performed to transform the surface and the taper profile of the second conductive layer into a first protection layer. The first conductive layer not covered by the first protection layer and the second conductive layer is removed to form a source/drain. The source/drain is with fine dimensions and the diffusion of metallic ions from the second conductive layer to the patterned semiconductor layer can be avoided.
摘要翻译：提供一种制造薄膜晶体管的方法。首先，在基板上形成栅极。形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成图案化的半导体层。依次在图案化的半导体层上形成第一和第二导电层。第二导电层被图案化，使得栅极上方的每一侧具有锥形轮廓，并且第一导电层被暴露。执行第一等离子体处理以将第二导电层的表面和锥形轮廓变换为第一保护层。不被第一保护层和第二导电层覆盖的第一导电层被去除以形成源极/漏极。源极/漏极具有精细的尺寸，并且可以避免金属离子从第二导电层到图案化半导体层的扩散。

7. 发明申请

US20090085032A1 PIXEL STRUCTURE AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：像素结构及其制作方法
公开(公告)号：US20090085032A1
公开(公告)日：2009-04-02
申请号：US12014098
申请日：2008-01-15
申请人： Hsien-Kun Chiu , Chin-Chuan Lai , Shau-Lin Lyu
发明人： Hsien-Kun Chiu , Chin-Chuan Lai , Shau-Lin Lyu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method of fabricating a pixel structure is provided. First, a semiconductor material layer and a first conductive layer are sequentially formed on a substrate. Next, a first patterned photoresist layer with a fillister is formed on the first conductive layer by a first mask. A semiconductor layer, a drain, and a source are formed by the first patterned photoresist layer. After removing the first patterned photoresist layer, a dielectric material layer covering the source, the drain, and the semiconductor layer is formed. A second conductive layer is formed on the dielectric material layer. Then, a second patterned photoresist layer with a salient is formed on the second conductive layer by a second mask. A gate and a dielectric layer are formed by the second patterned photoresist layer. After removing the second patterned photoresist layer, a pixel electrode electrically connected to the drain is formed above the substrate.
摘要翻译：提供了一种制造像素结构的方法。首先，在衬底上依次形成半导体材料层和第一导电层。接下来，通过第一掩模在第一导电层上形成具有填充物的第一图案化光致抗蚀剂层。半导体层，漏极和源极由第一图案化光致抗蚀剂层形成。在去除第一图案化光致抗蚀剂层之后，形成覆盖源极，漏极和半导体层的电介质材料层。在介电材料层上形成第二导电层。然后，通过第二掩模在第二导电层上形成具有凸起的第二图案化光致抗蚀剂层。栅极和电介质层由第二图案化光致抗蚀剂层形成。在去除第二图案化光致抗蚀剂层之后，在衬底上形成电连接到漏极的像素电极。

8. 发明申请

US20080157064A1 ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20080157064A1
公开(公告)日：2008-07-03
申请号：US11737769
申请日：2007-04-20
申请人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
发明人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/102 , H01L51/0022 , H01L51/0529 , H01L51/0545
摘要： An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.
摘要翻译：提供了包括基板，栅极，栅极绝缘体，粘合层，金属纳米颗粒层和有机半导体层的有机薄膜晶体管。栅极设置在基板上。栅极绝缘体设置在栅极和基板上。粘合剂层设置在栅极绝缘体上。此外，粘合剂层在浇口上方具有疏水表面，在疏水表面的两侧具有第一亲水表面和第二亲水表面。金属纳米粒子层的表面被亲水基团改性，金属纳米粒子层分别作为源极和漏极设置在粘合剂层的第一和第二亲水表面上。有机半导体层设置在粘合层的疏水性表面和金属纳米粒子层上。

9. 发明申请

US20080224139A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20080224139A1
公开(公告)日：2008-09-18
申请号：US11775874
申请日：2007-07-11
申请人： Chin-Chuan Lai , Chuan-Yi Wu , Yi-Yun Tsai
发明人： Chin-Chuan Lai , Chuan-Yi Wu , Yi-Yun Tsai
IPC分类号： H01L29/06
CPC分类号： H01L29/78678 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor including a substrate, a gate, a gate insulator layer, a semiconductor layer, an ohmic contact layer, a source and a drain is provided. The gate is disposed on the substrate while the gate insulator layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the gate insulator layer above the gate. The semiconductor layer includes an undoped amorphous silicon layer and a first undoped microcrystalline silicon (μc-Si) layer, wherein the first undoped μc-Si layer is disposed on the undoped amorphous silicon layer. The ohmic contact layer is disposed on part of the semiconductor layer and the source and the drain are disposed on the ohmic contact layer. Therefore, the thin film transistor has better quality control and electrical characteristics.
摘要翻译：提供了包括基板，栅极，栅极绝缘体层，半导体层，欧姆接触层，源极和漏极的薄膜晶体管。栅极设置在基板上，同时栅极绝缘体层设置在基板上并覆盖栅极。半导体层设置在栅极上方的栅极绝缘体层上。半导体层包括未掺杂的非晶硅层和第一未掺杂微晶硅（muc-Si）层，其中第一未掺杂的粘硅层设置在未掺杂的非晶硅层上。欧姆接触层设置在半导体层的一部分上，源极和漏极设置在欧姆接触层上。因此，薄膜晶体管具有更好的质量控制和电气特性。

10. 发明授权

US07405113B2 Fabrication method of thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07405113B2
公开(公告)日：2008-07-29
申请号：US11832550
申请日：2007-08-01
申请人： Chuan-Yi Wu , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
发明人： Chuan-Yi Wu , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.
摘要翻译：提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。栅极设置在基板上，栅极和基板被第一介电层覆盖。沟道层至少设置在栅极上方的第一介电层上。源极/漏极设置在沟道层上。源/漏包括第一阻挡层，导电层和第二阻挡层。第一阻挡层设置在导电层和沟道层之间。导电层被第一阻挡层和第二阻挡层覆盖。源极/漏极被第二介电层覆盖。因此，可以减少电气字符的变化。此外，还提供了一种制造薄膜晶体管的方法。

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