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1. 发明申请

US20080224139A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20080224139A1
公开(公告)日：2008-09-18
申请号：US11775874
申请日：2007-07-11
申请人： Chin-Chuan Lai , Chuan-Yi Wu , Yi-Yun Tsai
发明人： Chin-Chuan Lai , Chuan-Yi Wu , Yi-Yun Tsai
IPC分类号： H01L29/06
CPC分类号： H01L29/78678 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor including a substrate, a gate, a gate insulator layer, a semiconductor layer, an ohmic contact layer, a source and a drain is provided. The gate is disposed on the substrate while the gate insulator layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the gate insulator layer above the gate. The semiconductor layer includes an undoped amorphous silicon layer and a first undoped microcrystalline silicon (μc-Si) layer, wherein the first undoped μc-Si layer is disposed on the undoped amorphous silicon layer. The ohmic contact layer is disposed on part of the semiconductor layer and the source and the drain are disposed on the ohmic contact layer. Therefore, the thin film transistor has better quality control and electrical characteristics.
摘要翻译：提供了包括基板，栅极，栅极绝缘体层，半导体层，欧姆接触层，源极和漏极的薄膜晶体管。栅极设置在基板上，同时栅极绝缘体层设置在基板上并覆盖栅极。半导体层设置在栅极上方的栅极绝缘体层上。半导体层包括未掺杂的非晶硅层和第一未掺杂微晶硅（muc-Si）层，其中第一未掺杂的粘硅层设置在未掺杂的非晶硅层上。欧姆接触层设置在半导体层的一部分上，源极和漏极设置在欧姆接触层上。因此，薄膜晶体管具有更好的质量控制和电气特性。

2. 发明授权

US07405113B2 Fabrication method of thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07405113B2
公开(公告)日：2008-07-29
申请号：US11832550
申请日：2007-08-01
申请人： Chuan-Yi Wu , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
发明人： Chuan-Yi Wu , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.
摘要翻译：提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。栅极设置在基板上，栅极和基板被第一介电层覆盖。沟道层至少设置在栅极上方的第一介电层上。源极/漏极设置在沟道层上。源/漏包括第一阻挡层，导电层和第二阻挡层。第一阻挡层设置在导电层和沟道层之间。导电层被第一阻挡层和第二阻挡层覆盖。源极/漏极被第二介电层覆盖。因此，可以减少电气字符的变化。此外，还提供了一种制造薄膜晶体管的方法。

3. 发明申请

US20070269940A1 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070269940A1
公开(公告)日：2007-11-22
申请号：US11832550
申请日：2007-08-01
申请人： CHUAN-YI WU , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
发明人： CHUAN-YI WU , Chin-Chuan Lai , Yung-Chia Kuan , Wei-Jen Tai
IPC分类号： H01L21/84
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.
摘要翻译：提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。栅极设置在基板上，栅极和基板被第一介电层覆盖。沟道层至少设置在栅极上方的第一介电层上。源极/漏极设置在沟道层上。源/漏包括第一阻挡层，导电层和第二阻挡层。第一阻挡层设置在导电层和沟道层之间。导电层被第一阻挡层和第二阻挡层覆盖。源极/漏极被第二介电层覆盖。因此，可以减少电气字符的变化。此外，还提供了一种制造薄膜晶体管的方法。

4. 发明申请

US20070000609A1 ETCHING APPARATUS 审中-公开
标题翻译：蚀刻装置
公开(公告)号：US20070000609A1
公开(公告)日：2007-01-04
申请号：US11308830
申请日：2006-05-12
申请人： Wei-Jen Tai , Chuan-Yi Wu , Mei-Kuei Tseng , Ming-Tan Hsu
发明人： Wei-Jen Tai , Chuan-Yi Wu , Mei-Kuei Tseng , Ming-Tan Hsu
IPC分类号： C23F1/00
CPC分类号： C23F1/08 , C23F1/34 , C23F1/40
摘要： An etching apparatus, for etching copper or silver, which includes a hydrogen peroxide tank, an ammonium hydroxide tank, a water tank, an etching tank, a piping system and a temperature control device, is provided. The piping system connects the hydrogen peroxide tank, the ammonium hydroxide tank, the water tank to the etching tank, and the temperature control device is disposed around the hydrogen peroxide tank, the ammonium hydroxide tank and the etching tank to maintain the temperatures of them below the room temperature and above 12 degree centigrade. An etching process is also provided. First, hydrogen peroxide and ammonium hydroxide having a temperature in a temperature-range below the room temperature and above 12 degree centigrade, is provided. Then, water, hydrogen peroxide and ammonium hydroxide are mixed to be an etchant with a temperature maintained in said temperature temperature-range. Next, the etchant is utilized for etching copper or silver.
摘要翻译：提供一种用于蚀刻铜或银的蚀刻装置，其包括过氧化氢罐，氢氧化铵罐，水箱，蚀刻槽，管道系统和温度控制装置。管道系统将过氧化氢罐，氢氧化铵罐，水箱连接到蚀刻槽，并且温度控制装置设置在过氧化氢罐，氢氧化铵槽和蚀刻槽周围以将它们的温度保持在低于室温12摄氏度以上。还提供蚀刻工艺。首先，提供温度在室温以下且摄氏12度以上的过氧化氢和氢氧化铵。然后，将水，过氧化氢和氢氧化铵混合成为温度保持在所述温度温度范围内的蚀刻剂。接下来，蚀刻剂用于蚀刻铜或银。

5. 发明授权

US07858969B2 Organic thin film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07858969B2
公开(公告)日：2010-12-28
申请号：US11737769
申请日：2007-04-20
申请人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
发明人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/102 , H01L51/0022 , H01L51/0529 , H01L51/0545
摘要： An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.
摘要翻译：提供了包括基板，栅极，栅极绝缘体，粘合层，金属纳米颗粒层和有机半导体层的有机薄膜晶体管。栅极设置在基板上。栅极绝缘体设置在栅极和基板上。粘合剂层设置在栅极绝缘体上。此外，粘合剂层在浇口上方具有疏水表面，在疏水表面的两侧具有第一亲水表面和第二亲水表面。金属纳米粒子层的表面被亲水基团改性，金属纳米粒子层分别作为源极和漏极设置在粘合剂层的第一和第二亲水表面上。有机半导体层设置在粘合层的疏水性表面和金属纳米粒子层上。

6. 发明授权

US07229863B2 Method for fabricating thin film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07229863B2
公开(公告)日：2007-06-12
申请号：US11163602
申请日：2005-10-25
申请人： Chuan-Yi Wu , Yung-Chia Kuan , Chia-Chien Lu , Chin-Chuan Lai
发明人： Chuan-Yi Wu , Yung-Chia Kuan , Chia-Chien Lu , Chin-Chuan Lai
IPC分类号： H01L21/84
CPC分类号： H01L29/41733 , H01L29/458 , H01L29/66742 , Y10S438/906
摘要： A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer are formed on the patterned semiconductor layer in sequence. The second conductive layer is patterned such that each side of thereof above the gate has a taper profile and the first conductive layer is exposed. A first plasma process is performed to transform the surface and the taper profile of the second conductive layer into a first protection layer. The first conductive layer not covered by the first protection layer and the second conductive layer is removed to form a source/drain. The source/drain is with fine dimensions and the diffusion of metallic ions from the second conductive layer to the patterned semiconductor layer can be avoided.
摘要翻译：提供一种制造薄膜晶体管的方法。首先，在基板上形成栅极。形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成图案化的半导体层。依次在图案化的半导体层上形成第一和第二导电层。第二导电层被图案化，使得栅极上方的每一侧具有锥形轮廓，并且第一导电层被暴露。执行第一等离子体处理以将第二导电层的表面和锥形轮廓变换为第一保护层。不被第一保护层和第二导电层覆盖的第一导电层被去除以形成源极/漏极。源极/漏极具有精细的尺寸，并且可以避免金属离子从第二导电层到图案化半导体层的扩散。

7. 发明申请

US20070262379A1 Metal structure of glass substrate and formation thereof 审中-公开
标题翻译：玻璃基板的金属结构及其形成
公开(公告)号：US20070262379A1
公开(公告)日：2007-11-15
申请号：US11433439
申请日：2006-05-15
申请人： Chin-Chuan Lai , Hsian-Kun Chiu , Chuan-Yi Wu
发明人： Chin-Chuan Lai , Hsian-Kun Chiu , Chuan-Yi Wu
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/78603 , H01L29/4908 , H01L29/78609
摘要： Aluminum gate electrode parasitic resistance and capacitance delay suffers performance, and even makes the signal loss to high-resolution and small-size requests for thin film transistor liquid crystal display. An important technology employed in manufacturing thin film transistor is to convert surface of glass substrate into a silicon nitride layer, and subsequently to plate with one of low resistant copper, silver, copper alloy and silver alloy, and finally to form the thin film transistor on the substrate.
摘要翻译：铝栅极的寄生电阻和电容延迟受到性能的影响，甚至使得信号损耗达到高分辨率和小尺寸要求的薄膜晶体管液晶显示。用于制造薄膜晶体管的重要技术是将玻璃基板的表面转化为氮化硅层，然后用低电阻铜，银，铜合金和银合金之一进行平板化，最后形成薄膜晶体管底物。

8. 发明申请

US20080157064A1 ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20080157064A1
公开(公告)日：2008-07-03
申请号：US11737769
申请日：2007-04-20
申请人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
发明人： Yi-Yun Tsai , Chuan-Yi Wu , Chin-Chuan Lai
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/102 , H01L51/0022 , H01L51/0529 , H01L51/0545
摘要： An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.
摘要翻译：提供了包括基板，栅极，栅极绝缘体，粘合层，金属纳米颗粒层和有机半导体层的有机薄膜晶体管。栅极设置在基板上。栅极绝缘体设置在栅极和基板上。粘合剂层设置在栅极绝缘体上。此外，粘合剂层在浇口上方具有疏水表面，在疏水表面的两侧具有第一亲水表面和第二亲水表面。金属纳米粒子层的表面被亲水基团改性，金属纳米粒子层分别作为源极和漏极设置在粘合剂层的第一和第二亲水表面上。有机半导体层设置在粘合层的疏水性表面和金属纳米粒子层上。

9. 发明申请

US20070264747A1 PATTERNING PROCESS AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：使用该方法制造有机薄膜晶体管的方法及方法
公开(公告)号：US20070264747A1
公开(公告)日：2007-11-15
申请号：US11308845
申请日：2006-05-15
申请人： Kuo-Hsi Yen , Cheng-Wei Chou , Hsiao-Wen Zan , Chuan-Yi Wu
发明人： Kuo-Hsi Yen , Cheng-Wei Chou , Hsiao-Wen Zan , Chuan-Yi Wu
IPC分类号： H01L51/40
CPC分类号： H01L51/0017 , H01L51/0055 , H01L51/0541
摘要： A patterning process is provided. The patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-assembled monolayer (SAM) is formed on the substrate. Afterwards, an organic material layer is formed over the substrate to cover the self-assembled monolayer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned SAM is retained such that a patterned organic material layer.
摘要翻译：提供了图案化工艺。图案化处理包括以下步骤。首先，提供基板。然后，在衬底上形成图案化的自组装单层（SAM）。之后，在衬底上形成有机材料层以覆盖自组装单层。此后，去除有机材料层的一部分，其中与图案化的SAM接触的有机材料层被保持成图案化的有机材料层。

10. 发明申请

US20070158647A1 JUNCTION STRUCTURE OF ORGANIC SEMICONDUCTOR DEVICE, ORGANIC THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF 审中-公开
公开(公告)号：US20070158647A1
公开(公告)日：2007-07-12
申请号：US11467165
申请日：2006-08-25
申请人： Fang-Chung Chen , Chiao-Shun Chuang , Dong-Sian Chen , Li-Jen Kung , Yung-Sheng Lin , Chuan-Yi Wu
发明人： Fang-Chung Chen , Chiao-Shun Chuang , Dong-Sian Chen , Li-Jen Kung , Yung-Sheng Lin , Chuan-Yi Wu
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/105 , H01L51/057
摘要： A junction structure of an organic semiconductor device including an organic semiconductor layer, a conductive layer and a modifying layer is provided. The modifying layer is formed between the organic semiconductor layer and the conductive layer, wherein the modifying layer includes an inorganic compound or an organic complex compound. An organic thin film transistor including a gate, a source/drain, a dielectric layer, an organic semiconductor layer and at least a modifying layer is also provided. The gate is electrically isolated from the source/drain. The dielectric layer is disposed between the gate and the source/drain. The organic semiconductor layer is disposed between the source and the drain. The modifying layer is disposed between the organic semiconductor layer and the source/drain, wherein the modifying layer includes an inorganic compound or an organic complex compound.

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