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1. 发明授权

US09269791B2 Multi-gate MOSFET with embedded isolation structures 有权
标题翻译：具有嵌入式隔离结构的多栅极MOSFET
公开(公告)号：US09269791B2
公开(公告)日：2016-02-23
申请号：US13545967
申请日：2012-07-10
申请人： Ssu-I Fu , En-Chiuan Liou , Chih-Wei Yang , Ying-Tsung Chen , Shih-Hung Tsai
发明人： Ssu-I Fu , En-Chiuan Liou , Chih-Wei Yang , Ying-Tsung Chen , Shih-Hung Tsai
IPC分类号： H01L27/088 , H01L29/66 , H01L29/78 , H01L21/336
CPC分类号： H01L29/66795 , H01L29/785
摘要： A multi-gate MOSFET includes a substrate, a dielectric layer and at least a fin-shaped structure. The substrate has a first area and a second area. The dielectric layer is only located in the substrate of the first area. At least a fin-shaped structure is located on the dielectric layer. Moreover, the present invention also provides a multi-gate MOSFET process forming said multi-gate MOSFET.
摘要翻译：多栅极MOSFET包括衬底，电介质层和至少鳍状结构。衬底具有第一区域和第二区域。电介质层仅位于第一区域的衬底中。至少一个鳍状结构位于介电层上。此外，本发明还提供一种形成所述多栅极MOSFET的多栅极MOSFET工艺。

2. 发明申请

US20130183825A1 METHOD FOR MANUFACTURING DAMASCENE STRUCTURE 有权
标题翻译：制造大分子结构的方法
公开(公告)号：US20130183825A1
公开(公告)日：2013-07-18
申请号：US13352352
申请日：2012-01-18
申请人： En-Chiuan Liou , Chih-Wei Yang , Chih-Sen Huang , Chan-Yuan Hu , Ssu-I Fu
发明人： En-Chiuan Liou , Chih-Wei Yang , Chih-Sen Huang , Chan-Yuan Hu , Ssu-I Fu
IPC分类号： H01L21/768
CPC分类号： H01L21/76807 , H01L21/76813
摘要： A method for manufacturing a damascene structure includes providing a substrate having a dielectric layer formed thereon, forming at least a trench in the dielectric layer, forming at least a via hole and a dummy via hole in the dielectric layer, forming a first conductive layer filling up the trench, the via hole and the dummy via hole on the substrate, and performing a chemical mechanical polishing process to form a damascene structure and simultaneously to remove the dummy via hole.
摘要翻译：一种用于制造镶嵌结构的方法，包括提供其上形成有电介质层的基板，在电介质层中至少形成沟槽，在电介质层中至少形成通孔和伪通孔，形成第一导电层填充物通孔和通孔在基板上，进行化学机械抛光工艺以形成镶嵌结构并同时去除虚设通孔。

3. 发明申请

US20110191669A1 FLASH CONTENT NAVIGATION METHOD, MOBILE ELECTRONIC DEVICE, AND COMPUTER-READABLE MEDIUM 有权
标题翻译：闪存内容导航方法，移动电子设备和计算机可读介质
公开(公告)号：US20110191669A1
公开(公告)日：2011-08-04
申请号：US13012816
申请日：2011-01-25
申请人： Chih-Wei Yang , Te-Pei Tseng
发明人： Chih-Wei Yang , Te-Pei Tseng
IPC分类号： G06F3/14
CPC分类号： G06F3/14
摘要： A flash content navigation method, a mobile electronic device, and a computer-readable medium are provided, wherein the flash content is embedded in a web page, and a visible area within the web page is predetermined for displaying at least a portion of the flash content. In the method, when receiving a flash navigating signal, a full screen interface is popped up. If a size of the visible area is greater than that of the touch screen, the flash content is scaled down to make the flash content displayed in the visible area fit the size of the touch screen, and the flash content displayed in the visible area is played back by a scaled size. When receiving a flash interacting signal from the touch screen, the flash interacting signal is transmitted to a flash engine to perform an action on the flash content according to the flash interacting signal.
摘要翻译：提供闪存内容导航方法，移动电子设备和计算机可读介质，其中闪存内容被嵌入在网页中，网页内的可见区域是预定的，用于显示闪存的至少一部分内容。在该方法中，当接收到闪光导航信号时，弹出全屏界面。如果可见区域的尺寸大于触摸屏的大小，则缩放闪光内容以使可视区域中显示的闪光内容适合触摸屏的尺寸，并且可见区域中显示的闪光内容为以缩放大小播放。当从触摸屏接收到闪光相互作用信号时，闪光相互作用信号被发送到闪光引擎，以根据闪光相互作用信号对闪光内容执行动作。

4. 发明授权

US07892676B2 Cathode material for manufacturing a rechargeable battery 有权
标题翻译：用于制造可充电电池的阴极材料
公开(公告)号：US07892676B2
公开(公告)日：2011-02-22
申请号：US11518805
申请日：2006-09-11
申请人： Chih-Wei Yang , Wen-Ren Liu
发明人： Chih-Wei Yang , Wen-Ren Liu
IPC分类号： H01M4/58
CPC分类号： H01M4/5825 , H01M4/02 , H01M4/131 , H01M4/136 , H01M4/624 , H01M4/625 , H01M10/0525
摘要： A cathode material composition includes a composite compound having a formula of A3xM12y(PO4)3, and a conductive metal oxide having a formula of M2aOb, wherein A represents a metal element selected from Groups IA, IIA and IIIA; each of M1 and M2 independently represents a metal element selected from Groups IIA and IIIA, and transition elements; and 0≦x≦1.2, 1.2≦y≦1.8, 0
摘要翻译：阴极材料组合物包括具有式A3xM12y（PO4）3的复合化合物和具有式M2aOb的导电金属氧化物，其中A表示选自IA，IIA和IIIA族的金属元素; M1和M2中的每一个独立地表示选自IIA和IIIA族的金属元素和过渡元素; 和0＆nlE; x＆nlE; 1.2,1.2＆nlE; y＆nlE; 1.8,0

5. 发明授权

US07872509B2 Delay lock loop and phase angle generator 有权
标题翻译：延迟锁定环和相位角发生器
公开(公告)号：US07872509B2
公开(公告)日：2011-01-18
申请号：US12504089
申请日：2009-07-16
申请人： Chih-Wei Yang , Chien-Hsun Lee
发明人： Chih-Wei Yang , Chien-Hsun Lee
IPC分类号： H03L7/06
CPC分类号： H03L7/0812
摘要： The provided delay lock loop delaying an input signal includes a quadrature generator, a voltage controller and a delay cell. The input signal is inputted into the quadrature generator and the delay cell. A phase-changing signal from the quadrature generator and a delay signal respectively from the delay cell are inputted into the voltage controller at the same time so that a control voltage inputted into the delay cell to control a delay time of the delay signal is generated. Also, the provided phase angle generator generates an output signal in an arbitrary phase.
摘要翻译：提供的延迟锁定环路延迟输入信号包括正交发生器，电压控制器和延迟单元。输入信号被输入到正交发生器和延迟单元中。来自正交发生器的相位变化信号和来自延迟单元的延迟信号同时被输入到电压控制器中，从而产生输入到延迟单元中以控制延迟信号的延迟时间的控制电压。此外，所提供的相位角发生器产生任意相位的输出信号。

6. 发明授权

US07799457B2 Ion storage compound of cathode material and method for preparing the same 有权
标题翻译：阴极材料的离子存储化合物及其制备方法
公开(公告)号：US07799457B2
公开(公告)日：2010-09-21
申请号：US11764686
申请日：2007-06-18
申请人： Wen-Ren Liu , Chih-Wei Yang
发明人： Wen-Ren Liu , Chih-Wei Yang
IPC分类号： C01B25/45 , H01M4/58 , H01M4/36
CPC分类号： H01M4/5825 , H01M4/485 , H01M4/58 , H01M4/625 , H01M10/052 , H01M2004/021 , H01M2004/028
摘要： An ion storage compound of cathode material and method for preparing the same are disclosed. The method for preparing the ion storage compound comprises steps of providing a first reactant having a formula of A3xM12y(PO4)3, providing a second reactant being at least one compound selected from the group consisting of SiC, BN and metal oxide having a formula of M2aOb, and reacting the first reactant with the second reactant to form the ion storage compound. A is at least one element selected from the group consisting of Groups IA, IIA and IIIA; each of M1 and M2 is at least one element selected from the group consisting of Groups IIA, IIIA, IVA and VA and transition metal elements, respectively; and 0
摘要翻译：公开了阴极材料的离子存储化合物及其制备方法。制备离子存储化合物的方法包括提供具有式A3xM12y（PO4）3的第一反应物的步骤，提供第二反应物，其是选自由SiC，BN和金属氧化物组成的组中的至少一种化合物，其具有式并使第一反应物与第二反应物反应以形成离子存储化合物。 A是选自组IA，IIA和IIIA中的至少一种元素; M1和M2中的每一个分别为选自组IIA，IIIA，IVA和VA和过渡金属元素中的至少一种元素; 和0

7. 发明授权

US07700236B2 Cathode material for manufacturing a rechargeable battery 有权
标题翻译：用于制造可充电电池的阴极材料
公开(公告)号：US07700236B2
公开(公告)日：2010-04-20
申请号：US11510096
申请日：2006-08-25
申请人： Chih-Wei Yang
发明人： Chih-Wei Yang
IPC分类号： H01M4/58 , H01M4/36 , C01B25/45
CPC分类号： H01M4/5825 , B82Y30/00 , C01B25/45 , C01D15/02 , C01P2004/64 , H01M4/02 , H01M4/131 , H01M4/136 , H01M4/366 , H01M4/485 , H01M4/62 , H01M4/621 , H01M4/622 , H01M4/623 , H01M4/625 , H01M10/052 , H01M2004/021
摘要： A cathode material has one of olivine and NASICON structures and includes micrometer-sized secondary particles having a particle size ranging from 1 to 50 μm. Each of the micrometer-sized secondary particles is composed of crystalline nanometer-sized primary particles of a metal compound having a particle size ranging from 10 to 500 nm.
摘要翻译：阴极材料具有橄榄石和NASICON结构之一，并且包括具有1至50μm的粒度的微米级二次粒子。每个微米尺寸的二次颗粒由具有10至500nm的粒度范围的金属化合物的结晶纳米尺寸的一次粒子组成。

8. 发明申请

US20090224327A1 PLANE MOS AND THE METHOD FOR MAKING THE SAME 审中-公开
标题翻译：平面MOS及其制作方法
公开(公告)号：US20090224327A1
公开(公告)日：2009-09-10
申请号：US12041666
申请日：2008-03-04
申请人： En-Chiuan Liou , Shih-Fang Hong , Chih-Wei Yang , Yu-Hsin Lin , Rai-Min Huang
发明人： En-Chiuan Liou , Shih-Fang Hong , Chih-Wei Yang , Yu-Hsin Lin , Rai-Min Huang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/517 , H01L27/1211 , H01L29/785
摘要： A plane MOS includes a substrate, an insulator layer whose surface is substantially parallel with the surface of the substrate disposed on the substrate, a gate, a source and a drain directly disposed on the insulator layer and a gate channel disposed between the source and the drain and contacting the gate.
摘要翻译：平面MOS包括基板，其表面基本上平行于设置在基板上的基板的表面的绝缘体层，直接设置在绝缘体层上的栅极，源极和漏极以及设置在源极和源极之间的栅极沟道排水并与门接触。

9. 发明申请

US20080174746A1 METHOD FOR PROJECTING AN IMAGE FROM ONE OF A PLURALITY OF HOSTS AND PROJECTION DEVICE THEREOF 审中-公开
标题翻译：从多个主体和投影设备之一投影图像的方法
公开(公告)号：US20080174746A1
公开(公告)日：2008-07-24
申请号：US11626335
申请日：2007-01-23
申请人： Wei-Ting Lai , Chang-Hung Lee , Chih-Wei Yang
发明人： Wei-Ting Lai , Chang-Hung Lee , Chih-Wei Yang
IPC分类号： G03B21/14
CPC分类号： H04N5/74 , H04L63/083 , H04W12/06
摘要： A method for projecting an image transmitting from one of a plurality of hosts by a projection device is disclosed. The method includes: (a) the plurality of hosts each logging into the projection device using wireless communication technology; (b) selecting a first host among the plurality of hosts connected to the projection device; (c) the projection device allowing the selected first host to transmit data to the projection device using wireless communication technology; and (d) the projection device projecting an image corresponding to the data transmitted from the first host.
摘要翻译：公开了一种通过投影装置投影从多个主机中的一个发送的图像的方法。该方法包括：（a）使用无线通信技术登录投影装置的多个主机; （b）选择连接到投影设备的多个主机中的第一主机; （c）所述投影设备允许所选择的第一主机使用无线通信技术向投影设备发送数据; 和（d）投影设备投影与从第一主机发送的数据相对应的图像。

10. 发明申请

US20070238021A1 ION STORAGE COMPOUND OF CATHODE MATERIAL AND METHOD FOR PREPARING THE SAME 有权
标题翻译：阴离子材料的离子存储化合物及其制备方法
公开(公告)号：US20070238021A1
公开(公告)日：2007-10-11
申请号：US11764686
申请日：2007-06-18
申请人： Wen-Ren Liu , Chih-Wei Yang
发明人： Wen-Ren Liu , Chih-Wei Yang
IPC分类号： H01M4/38
CPC分类号： H01M4/5825 , H01M4/485 , H01M4/58 , H01M4/625 , H01M10/052 , H01M2004/021 , H01M2004/028
摘要： An ion storage compound of cathode material and method for preparing the same are disclosed. The method for preparing the ion storage compound comprises steps of providing a first reactant having a formula of A3xM12y(PO4)3, providing a second reactant being at least one compound selected from the group consisting of SiC, BN and metal oxide having a formula of M2aOb, and reacting the first reactant with the second reactant to form the ion storage compound. A is at least one element selected from the group consisting of Groups IA, IIA and IIIA; each of M1 and M2 is at least one element selected from the group consisting of Groups IIA, IIIA, IVA and VA and transition metal elements, respectively; and 0
摘要翻译：公开了阴极材料的离子存储化合物及其制备方法。制备离子存储化合物的方法包括以下步骤：提供具有下式的第一反应物：A 3×M 2 O 3（PO 4 S 4）提供第二反应物，其为至少一种选自下组的化合物：SiC，BN和具有下式的化学式的金属氧化物：并使第一反应物与第二反应物反应以形成离子存储化合物。 A是选自组IA，IIA和IIIA中的至少一种元素; M1和M2中的每一个分别为选自组IIA，IIIA，IVA和VA和过渡金属元素中的至少一种元素; 0

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