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1. 发明申请

US20110112678A1 ADVANCED PROCESS CONTROL FOR NEW TAPEOUT PRODUCT 有权
标题翻译：新型贴片产品的先进工艺控制
公开(公告)号：US20110112678A1
公开(公告)日：2011-05-12
申请号：US12616681
申请日：2009-11-11
申请人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
发明人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
IPC分类号： G06F17/50
CPC分类号： H01L21/67253 , G05B19/41865 , H01L21/67276 , Y02P90/20
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe.
摘要翻译：本发明提供一种半导体制造方法。该方法包括提供产品的产品数据，产品数据包括敏感产品参数; 根据敏感产品参数搜索现有产品，从现有产品中识别相关产品; 使用相关产品的相应数据确定产品的处理模型参数的初始值; 将处理模型参数的初始值分配给与制造过程相关联的处理模型; 此后，使用该处理模型调整处理配方; 以及使用所述处理配方对所述半导体晶片进行制造处理。

2. 发明授权

US08239056B2 Advanced process control for new tapeout product 有权
标题翻译：新的流片产品的高级过程控制
公开(公告)号：US08239056B2
公开(公告)日：2012-08-07
申请号：US12616681
申请日：2009-11-11
申请人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
发明人： Chih-Wei Hsu , Yu-Jen Cheng , Wen-Pin Liu , Shun-Ping Wang , Shin-Rung Lu , Jo Fei Wang , Jong-I Mou , Andy Tsen , Chun-Hsien Lin
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , G05B19/41865 , H01L21/67276 , Y02P90/20
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe.
摘要翻译：本发明提供一种半导体制造方法。该方法包括提供产品的产品数据，产品数据包括敏感产品参数; 根据敏感产品参数搜索现有产品，从现有产品中识别相关产品; 使用相关产品的相应数据确定产品的处理模型参数的初始值; 将处理模型参数的初始值分配给与制造过程相关联的处理模型; 此后，使用该处理模型调整处理配方; 以及使用所述处理配方对所述半导体晶片进行制造处理。

3. 发明授权

US08396583B2 Method and system for implementing virtual metrology in semiconductor fabrication 有权
标题翻译：在半导体制造中实现虚拟计量的方法和系统
公开(公告)号：US08396583B2
公开(公告)日：2013-03-12
申请号：US12731407
申请日：2010-03-25
申请人： Po-Feng Tsai , Andy Tsen , Jo Fei Wang , Jong-I Mou
发明人： Po-Feng Tsai , Andy Tsen , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes collecting a plurality of manufacturing data sets from a plurality of semiconductor processes, respectively. The method includes normalizing each of the manufacturing data sets in a manner so that statistical differences among the manufacturing data sets are reduced. The method includes establishing a database that includes the normalized manufacturing data sets. The method includes normalizing the database in a manner so that the manufacturing data sets in the normalized database are statistically compatible with a selected one of the manufacturing data sets. The method includes predicting performance of a selected one of the semiconductor processes by using the normalized database. The selected semiconductor process corresponds to the selected manufacturing data set. The method includes controlling a semiconductor processing machine in response to the predicted performance.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括分别从多个半导体处理中收集多个制造数据集。该方法包括以制造数据组之间的统计差异减小的方式标准化每个制造数据组。该方法包括建立包括标准化制造数据集的数据库。该方法包括以使得归一化数据库中的制造数据集统统地与选定的一个制造数据集统计地兼容的方式对数据库进行归一化。该方法包括通过使用归一化数据库来预测所选择的一个半导体处理的性能。所选择的半导体工艺对应于所选择的制造数据集。该方法包括响应于预测的性能来控制半导体处理机。

4. 发明申请

US20100292824A1 SYSTEM AND METHOD FOR IMPLEMENTING A WAFER ACCEPTANCE TEST ("WAT") ADVANCED PROCESS CONTROL ("APC") WITH NOVEL SAMPLING POLICY AND ARCHITECTURE 有权
标题翻译：用新的采样政策和架构实施水轮接收测试（“WAT”）高级过程控制（“APC”）的系统和方法
公开(公告)号：US20100292824A1
公开(公告)日：2010-11-18
申请号：US12465064
申请日：2009-05-13
申请人： Andy Tsen , Jo Fei Wang , Po-Feng Tsai , Ming-Yu Fan , Jill Wang , Jong-I Mou , Sunny Wu
发明人： Andy Tsen , Jo Fei Wang , Po-Feng Tsai , Ming-Yu Fan , Jill Wang , Jong-I Mou , Sunny Wu
IPC分类号： G05B13/04
CPC分类号： G05B13/048 , G05B19/41875 , Y02P90/22 , Y02P90/86
摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing a key process on a sample number of wafers of a lot of wafers; performing a key inline measurement related to the key process to produce metrology data for the wafers; predicting WAT data from the metrology data using an inline-to-WAT model; and using the predicted WAT data to tune a WAT APC process for controlling a tuning process or a process APC process.
摘要翻译：描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。在一个实施例中，该方法包括对大量晶片的晶片的样本数进行密钥处理; 执行关键过程的关键在线测量以产生晶片的测量数据; 使用直线到WAT模型预测来自计量数据的WAT数据; 并且使用预测的WAT数据来调整用于控制调谐过程或过程APC过程的WAT APC过程。

5. 发明授权

US08108060B2 System and method for implementing a wafer acceptance test (“WAT”) advanced process control (“APC”) with novel sampling policy and architecture 有权
标题翻译：采用新颖的采样策略和架构实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法
公开(公告)号：US08108060B2
公开(公告)日：2012-01-31
申请号：US12465064
申请日：2009-05-13
申请人： Andy Tsen , Jo Fei Wang , Po-Feng Tsai , Ming-Yu Fan , Jill Wang , Jong-I Mou , Sunny Wu
发明人： Andy Tsen , Jo Fei Wang , Po-Feng Tsai , Ming-Yu Fan , Jill Wang , Jong-I Mou , Sunny Wu
IPC分类号： G06F19/00 , G06F17/18 , G06F11/30 , G01N37/00
CPC分类号： G05B13/048 , G05B19/41875 , Y02P90/22 , Y02P90/86
摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing a key process on a sample number of wafers of a lot of wafers; performing a key inline measurement related to the key process to produce metrology data for the wafers; predicting WAT data from the metrology data using an inline-to-WAT model; and using the predicted WAT data to tune a WAT APC process for controlling a tuning process or a process APC process.
摘要翻译：描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。在一个实施例中，该方法包括对大量晶片的晶片的样本数进行密钥处理; 执行关键过程的关键在线测量以产生晶片的测量数据; 使用直线到WAT模型预测来自计量数据的WAT数据; 并且使用预测的WAT数据来调整用于控制调谐过程或过程APC过程的WAT APC过程。

6. 发明授权

US08041451B2 Method for bin-based control 有权
标题翻译：基于bin的控制方法
公开(公告)号：US08041451B2
公开(公告)日：2011-10-18
申请号：US12427154
申请日：2009-04-21
申请人： Sunny Wu , Chih-Sheng Shih , Andy Tsen , Jo Fei Wang , Jong-I Mou , Hsin Kuan
发明人： Sunny Wu , Chih-Sheng Shih , Andy Tsen , Jo Fei Wang , Jong-I Mou , Hsin Kuan
IPC分类号： G06F7/00 , G06F19/00 , G06F17/00 , G06Q10/00
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/32256 , G05B2219/32324 , G05B2219/45031 , G06Q10/087 , Y02P90/14 , Y02P90/20
摘要： A method for providing bin-based control when manufacturing integrated circuit devices is disclosed. The method comprises performing a plurality of processes on a plurality of wafer lots; determining a required bin quantity, an actual bin quantity, and a projected bin quantity; comparing the determined required bin quantity with the determined actual bin quantity and determined projected bin quantity; and modifying at least one of the plurality of processes on the plurality of wafer lots if the determined actual bin quantity and determined projected bin quantity fail to satisfy the determined required bin quantity.
摘要翻译：公开了一种在制造集成电路器件时提供基于bin的控制的方法。该方法包括在多个晶片批次上执行多个处理; 确定所需的仓数量，实际箱数量和投影箱数量; 将确定的所需仓量与确定的实际箱数量和确定的预计仓量进行比较; 以及如果所确定的实际仓量和确定的投影箱数量不能满足所确定的所需仓量，则修改多个晶片批次上的多个处理中的至少一个。

7. 发明申请

US20110238198A1 METHOD AND SYSTEM FOR IMPLEMENTING VIRTUAL METROLOGY IN SEMICONDUCTOR FABRICATION 有权
标题翻译：在半导体制造中实现虚拟计量的方法和系统
公开(公告)号：US20110238198A1
公开(公告)日：2011-09-29
申请号：US12731407
申请日：2010-03-25
申请人： Po-Feng Tsai , Andy Tsen , Jo Fei Wang , Jong-I Mou
发明人： Po-Feng Tsai , Andy Tsen , Jo Fei Wang , Jong-I Mou
IPC分类号： G05B13/04 , G06F15/18
CPC分类号： H01L22/20
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes collecting a plurality of manufacturing data sets from a plurality of semiconductor processes, respectively. The method includes normalizing each of the manufacturing data sets in a manner so that statistical differences among the manufacturing data sets are reduced. The method includes establishing a database that includes the normalized manufacturing data sets. The method includes normalizing the database in a manner so that the manufacturing data sets in the normalized database are statistically compatible with a selected one of the manufacturing data sets. The method includes predicting performance of a selected one of the semiconductor processes by using the normalized database. The selected semiconductor process corresponds to the selected manufacturing data set. The method includes controlling a semiconductor processing machine in response to the predicted performance.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括分别从多个半导体处理中收集多个制造数据集。该方法包括以制造数据组之间的统计差异减小的方式标准化每个制造数据组。该方法包括建立包括标准化制造数据集的数据库。该方法包括以使得归一化数据库中的制造数据集统统地与选定的一个制造数据集统计地兼容的方式对数据库进行归一化。该方法包括通过使用归一化数据库来预测所选择的一个半导体处理的性能。所选择的半导体工艺对应于所选择的制造数据集。该方法包括响应于预测的性能来控制半导体处理机。

8. 发明申请

US20100268367A1 METHOD FOR BIN-BASED CONTROL 有权
标题翻译：基于BIN的控制方法
公开(公告)号：US20100268367A1
公开(公告)日：2010-10-21
申请号：US12427154
申请日：2009-04-21
申请人： Sunny Wu , Chih-Sheng Shih , Andy Tsen , Jo Fei Wang , Jong-I Mou , Hsin Kuan
发明人： Sunny Wu , Chih-Sheng Shih , Andy Tsen , Jo Fei Wang , Jong-I Mou , Hsin Kuan
IPC分类号： G06F17/00
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/32256 , G05B2219/32324 , G05B2219/45031 , G06Q10/087 , Y02P90/14 , Y02P90/20
摘要： A method for providing bin-based control when manufacturing integrated circuit devices is disclosed. The method comprises performing a plurality of processes on a plurality of wafer lots; determining a required bin quantity, an actual bin quantity, and a projected bin quantity; comparing the determined required bin quantity with the determined actual bin quantity and determined projected bin quantity; and modifying at least one of the plurality of processes on the plurality of wafer lots if the determined actual bin quantity and determined projected bin quantity fail to satisfy the determined required bin quantity.
摘要翻译：公开了一种在制造集成电路器件时提供基于bin的控制的方法。该方法包括在多个晶片批次上执行多个处理; 确定所需的仓数量，实际箱数量和投影箱数量; 将确定的所需仓量与确定的实际箱数量和确定的预计仓量进行比较; 以及如果所确定的实际仓量和确定的投影箱数量不能满足所确定的所需仓量，则修改多个晶片批次上的多个处理中的至少一个。

9. 发明申请

US20110010215A1 METHOD FOR A BIN RATIO FORECAST AT NEW TAPE OUT STAGE 有权
标题翻译：新带前端的比率预测方法
公开(公告)号：US20110010215A1
公开(公告)日：2011-01-13
申请号：US12499345
申请日：2009-07-08
申请人： Chun-Hsien Lin , Andy Tsen , Jui-Long Chen , Sunny Wu , Jong-I Mou , Chia-Hung Huang
发明人： Chun-Hsien Lin , Andy Tsen , Jui-Long Chen , Sunny Wu , Jong-I Mou , Chia-Hung Huang
IPC分类号： G06Q10/00 , G06F17/18
CPC分类号： G06Q10/06 , G06Q30/0202
摘要： A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.
摘要翻译：公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。

10. 发明授权

US08229588B2 Method and system for tuning advanced process control parameters 有权
标题翻译：调整高级过程控制参数的方法和系统
公开(公告)号：US08229588B2
公开(公告)日：2012-07-24
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

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