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1. 发明申请

US20100228370A1 METHOD AND SYSTEM FOR TUNING ADVANCED PROCESS CONTROL PARAMETERS 有权
标题翻译：用于调谐高级过程控制参数的方法和系统
公开(公告)号：US20100228370A1
公开(公告)日：2010-09-09
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G05B13/04 , G06F17/10
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

2. 发明授权

US08229588B2 Method and system for tuning advanced process control parameters 有权
标题翻译：调整高级过程控制参数的方法和系统
公开(公告)号：US08229588B2
公开(公告)日：2012-07-24
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

3. 发明申请

US20050051196A1 Developer dispensing apparatus with adjustable knife ring 审中-公开
标题翻译：具有可调节刀环的显影剂分配装置
公开(公告)号：US20050051196A1
公开(公告)日：2005-03-10
申请号：US10658708
申请日：2003-09-08
申请人： Yao-Hwan Kao , Ming-Yeon Hung , Po-Chang Huang
发明人： Yao-Hwan Kao , Ming-Yeon Hung , Po-Chang Huang
IPC分类号： G03F7/30 , H01L21/00 , B08B3/02
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A developer dispensing apparatus for dispensing developer solution onto a semiconductor wafer substrate which has a vertically-adjustable knife ring. The knife ring is vertically actuated in the apparatus by pressurized air or fluid. In an application, the gap distance between the upper edge of the knife ring and the backside of the wafer is initially adjusted to a minimum value as the developer solution is dispensed onto the wafer, by adjusting the knife ring to the uppermost position in the apparatus.
摘要翻译：一种用于将显影剂溶液分配到具有可垂直调节的刀环的半导体晶片衬底上的显影剂分配装置。刀环通过加压空气或流体在设备中垂直致动。在一个应用中，通过将刀环调节到装置中的最上位置，通过将显影剂溶液分配到晶片上，将刀环的上边缘和晶片的后边缘之间的间隙距离调节到最小值。

4. 发明申请

US20050211267A1 Rinse nozzle and method 审中-公开
标题翻译：冲洗喷嘴和方法
公开(公告)号：US20050211267A1
公开(公告)日：2005-09-29
申请号：US10810384
申请日：2004-03-26
申请人： Yao-Hwan Kao , Po-Chang Huang , Ming-Yeon Hung , Chi-Che Huang
发明人： Yao-Hwan Kao , Po-Chang Huang , Ming-Yeon Hung , Chi-Che Huang
IPC分类号： B08B3/02 , C23G1/00 , F26B3/02 , H01L21/00 , H01L21/302 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/02 , H01L21/67028 , H01L21/67051
摘要： A method and apparatus for rinsing and drying a substrate (100) of a semiconductor wafer (102), has a first nozzle (110) dispensing rinsing fluid against the substrate (100); and a second nozzle (114) dispensing dry gas under pressure against the substrate (100) during a drying cycle to dry the substrate (100) completely. The second nozzle (114) can point to the substrate (100) while the substrate (100) spins. The nozzles (110) and (114) can be positioned by a robot arm (112).
摘要翻译：一种用于冲洗和干燥半导体晶片（102）的衬底（100）的方法和装置，具有将冲洗流体分配到衬底（100）上的第一喷嘴（110）; 以及第二喷嘴（114），其在干燥循环期间将干燥气体在压力下分配到所述基板（100）以完全干燥所述基板（100）。当衬底（100）旋转时，第二喷嘴（114）可指向衬底（100）。喷嘴（110）和（114）可以由机器人臂（112）定位。

5. 发明授权

US6069091A In-situ sequential silicon containing hard mask layer/silicon layer plasma etch method 失效
标题翻译：原位顺序硅含硬掩模层/硅层等离子体蚀刻法
公开(公告)号：US6069091A
公开(公告)日：2000-05-30
申请号：US999205
申请日：1997-12-29
申请人： Fa-Yuan Chang , Ming-Yeon Hung
发明人： Fa-Yuan Chang , Ming-Yeon Hung
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/762 , H01L21/302
CPC分类号： H01L21/3065 , H01L21/308 , H01L21/31116 , H01L21/76224
摘要： A method for etching a silicon layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a blanket silicon layer. There is then formed upon the blanket silicon layer a blanket silicon containing hard mask layer, where the blanket silicon containing hard mask layer is formed from a silicon containing material chosen from the group of silicon containing materials consisting of silicon oxide materials, silicon nitride materials, silicon oxynitride materials and composites of silicon oxide materials, silicon nitride materials and silicon oxynitride materials. There is then formed upon the blanket silicon containing hard mask layer a patterned photoresist layer. There is then etched through a first plasma etch method the blanket silicon containing hard mask layer to form a patterned silicon containing hard mask layer while employing the patterned photoresist layer as a first etch mask layer. The first plasma etch method employs a first etchant gas composition comprising a first fluorine and carbon containing etchant source gas and a first bromine containing etchant source gas. Finally, there is then etched in-situ through a second plasma etch method the blanket silicon layer to form an at least partially etched silicon layer while employing the patterned photoresist layer and the patterned silicon containing hard mask layer as a second etch mask. The second plasma etch method employs a second etchant gas composition comprising a second fluorine and carbon containing etchant source gas, a second bromine containing etchant source gas and a chlorine containing etchant source gas.
摘要翻译：一种在微电子制造中蚀刻硅层的方法。首先提供了在微电子制造中使用的衬底。然后在衬底上形成覆盖硅层。然后在橡皮布硅层上形成含有覆盖硅的硬掩模层，其中，含硅的硬掩模层由含硅材料形成，所述含硅材料选自由硅氧化物材料，氮化硅材料，氮氧化硅材料和氧化硅材料，氮化硅材料和氮氧化硅材料的复合材料。然后在橡皮布含硅的硬掩模层上形成图案化的光致抗蚀剂层。然后通过第一等离子体蚀刻方法蚀刻包含硅的硬掩模层，以形成图案化的含硅硬掩模层，同时使用图案化的光致抗蚀剂层作为第一蚀刻掩模层。第一等离子体蚀刻方法采用包含第一含氟和碳的蚀刻剂源气体和第一含溴腐蚀剂源气体的第一蚀刻剂气体组合物。最后，然后通过第二等离子体蚀刻方法将橡皮布硅层原位蚀刻以形成至少部分蚀刻的硅层，同时使用图案化的光致抗蚀剂层和图案化的含硅硬掩模层作为第二蚀刻掩模。第二等离子体蚀刻方法采用包含第二含氟和碳的蚀刻剂源气体的第二蚀刻剂气体组合物，第二含溴蚀刻剂源气体和含氯腐蚀剂源气体。

6. 发明授权

US5770523A Method for removal of photoresist residue after dry metal etch 失效
标题翻译：干金属蚀刻后去除光致抗蚀剂残留物的方法
公开(公告)号：US5770523A
公开(公告)日：1998-06-23
申请号：US709697
申请日：1996-09-09
申请人： Ming-Yeon Hung , Janet Yu , Weng-Liang Fang , Chang-Ching Kin
发明人： Ming-Yeon Hung , Janet Yu , Weng-Liang Fang , Chang-Ching Kin
IPC分类号： G03F7/42 , H01L21/02 , H01L21/3213 , C25F3/30
CPC分类号： H01L21/02071 , G03F7/42 , Y10S438/906 , Y10S438/963
摘要： A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.
摘要翻译：提供了一种用于去除用于金属减去蚀刻的残余光致抗蚀剂掩模图案的表面层的方法，其使用相同的反应器设备，但是使用反应性含氟气体与表面层形成挥发性化合物，使得随后常规氧等离子体剥离工艺可以用于完整的抗蚀剂残留物去除，而不需要集成电路器件的过度的温度暴露。

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