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1. 发明申请

US20100228370A1 METHOD AND SYSTEM FOR TUNING ADVANCED PROCESS CONTROL PARAMETERS 有权
标题翻译：用于调谐高级过程控制参数的方法和系统
公开(公告)号：US20100228370A1
公开(公告)日：2010-09-09
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G05B13/04 , G06F17/10
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

2. 发明授权

US08229588B2 Method and system for tuning advanced process control parameters 有权
标题翻译：调整高级过程控制参数的方法和系统
公开(公告)号：US08229588B2
公开(公告)日：2012-07-24
申请号：US12396996
申请日：2009-03-03
申请人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Chih-Wei Hsu , Ming-Yeon Hung , Ming-Yu Fan , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , G05B13/044
摘要： A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
摘要翻译：提供了一种用于半导体制造的先进工艺控制（APC）的方法。该方法包括提供将由半导体处理工具处理的当前晶片，提供由半导体处理工具处理的先前晶片的第一数据，从第一数据解耦噪声以产生第二数据，基于接近度来评估APC性能的第二数据提供给目标数据，基于APC性能确定控制参数，并且利用控制参数来控制半导体处理工具来处理本晶片。

3. 发明授权

US08392009B2 Advanced process control with novel sampling policy 有权
标题翻译：先进的过程控制与新的抽样政策
公开(公告)号：US08392009B2
公开(公告)日：2013-03-05
申请号：US12415366
申请日：2009-03-31
申请人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
发明人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
IPC分类号： G06F19/00 , G01R31/26 , G06K9/00 , G06F17/50 , G01T1/24
CPC分类号： G05B21/02 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling rate, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor wafers.
摘要翻译：本发明提供一种半导体制造方法。该方法包括对第一多个半导体晶片执行第一处理; 基于过程质量确定对所述第一多个半导体晶片的采样率; 确定采样场和采样点到所述第一多个半导体晶片; 根据采样率，采样场和采样点测量第一多个半导体晶片的子集; 根据测量修改第二个过程; 以及将所述第二处理应用于第二多个半导体晶片。

4. 发明申请

US20100249974A1 ADVANCED PROCESS CONTROL WITH NOVEL SAMPLING POLICY 有权
标题翻译：具有新型采样策略的高级过程控制
公开(公告)号：US20100249974A1
公开(公告)日：2010-09-30
申请号：US12415366
申请日：2009-03-31
申请人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
发明人： Wang Jo Fei , Andy Tsen , Ming-Yu Fan , Jill Wang , Jong-I Mou
IPC分类号： G05B13/02 , G06F17/00
CPC分类号： G05B21/02 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling arte, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor waders.
摘要翻译：本发明提供一种半导体制造方法。该方法包括对第一多个半导体晶片执行第一处理; 基于过程质量确定对所述第一多个半导体晶片的采样率; 确定采样场和采样点到所述第一多个半导体晶片; 根据采样场，采样场和采样点测量第一多个半导体晶片的子集; 根据测量修改第二个过程; 以及将所述第二处理应用于第二多个半导体缓冲器。

5. 发明授权

US08219341B2 System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) with routing model 有权
标题翻译：使用路由模型实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法
公开(公告)号：US08219341B2
公开(公告)日：2012-07-10
申请号：US12411680
申请日：2009-03-26
申请人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L22/14
摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing an inter-metal (“IM”) WAT on a plurality of processed wafer lots; selecting a subset of the plurality of wafer lots using a lot sampling process; and selecting a sample wafer group using the wafer lot subset, wherein IM WAT is performed on wafers of the sample wafer group to obtain IM WAT data therefore. The method further comprises estimating final WAT data for all wafers in the processed wafer lots from IM WAT data obtained for the sample wafer group and providing the estimated final WAT data to a WAT APC process for controlling processes.
摘要翻译：描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。在一个实施例中，该方法包括在多个经处理的晶片批次上执行金属间（“IM”）WAT; 使用批次采样处理来选择所述多个晶片批次的子集; 以及使用晶片批次子集选择样品晶片组，因此在样品晶片组的晶片上执行IM WAT以获得IM WAT数据。该方法还包括从针对样品晶片组获得的IM WAT数据估计经处理的晶片批次中的所有晶片的最终WAT数据，并将估计的最终WAT数据提供给用于控制过程的WAT APC过程。

6. 发明申请

US20100250172A1 SYSTEM AND METHOD FOR IMPLEMENTING WAFER ACCEPTANCE TEST ("WAT") ADVANCED PROCESS CONTROL ("APC") WITH ROUTING MODEL 有权
标题翻译：使用路由模型实现波形接收测试（“WAT”）高级过程控制（“APC”）的系统和方法
公开(公告)号：US20100250172A1
公开(公告)日：2010-09-30
申请号：US12411680
申请日：2009-03-26
申请人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
发明人： Andy Tsen , Sunny Wu , Wang Jo Fei , Jong-I Mou
IPC分类号： G06F19/00 , G01N37/00
CPC分类号： H01L22/20 , H01L22/14
摘要： System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing an inter-metal (“IM”) WAT on a plurality of processed wafer lots; selecting a subset of the plurality of wafer lots using a lot sampling process; and selecting a sample wafer group using the wafer lot subset, wherein IM WAT is performed on wafers of the sample wafer group to obtain IM WAT data therefore. The method further comprises estimating final WAT data for all wafers in the processed wafer lots from IM WAT data obtained for the sample wafer group and providing the estimated final WAT data to a WAT APC process for controlling processes.
摘要翻译：描述了实现晶片验收测试（“WAT”）高级过程控制（“APC”）的系统和方法。在一个实施例中，该方法包括在多个经处理的晶片批次上执行金属间（“IM”）WAT; 使用批次采样处理来选择所述多个晶片批次的子集; 以及使用晶片批次子集选择样品晶片组，因此在样品晶片组的晶片上执行IM WAT以获得IM WAT数据。该方法还包括从针对样品晶片组获得的IM WAT数据估计经处理的晶片批次中的所有晶片的最终WAT数据，并将估计的最终WAT数据提供给用于控制过程的WAT APC过程。

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