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1. 发明授权

US06441950B1 Distributed raman amplifier systems with transient control 有权
标题翻译：具有瞬态控制功能的分布式拉曼放大器系统
公开(公告)号：US06441950B1
公开(公告)日：2002-08-27
申请号：US09727776
申请日：2000-12-04
申请人： Chien-Jen Chen , William S. Wong , Jun Ye
发明人： Chien-Jen Chen , William S. Wong , Jun Ye
IPC分类号： H04B1012
CPC分类号： H04B10/0777 , H04B10/2916 , H04B10/296
摘要： Distributed Raman amplifier systems are provided in which gain transients are controlled. Signal taps may be used to monitor optical signal powers at network nodes. A telemetry channel may be used to share information between nodes. Information on the output power of a given node may be passed to a subsequent node using the telemetry channel. The subsequent node may use feed-forward and feedback control schemes to control Raman gain transients in the preceding transmission fiber span based on the output power information received over the telemetry channel.
摘要翻译：提供分布式拉曼放大器系统，其中增益瞬变被控制。信号抽头可用于监视网络节点的光信号功率。可以使用遥测信道在节点之间共享信息。关于给定节点的输出功率的信息可以使用遥测信道传递到后续节点。后续节点可以使用前馈和反馈控制方案来基于在遥测通道上接收的输出功率信息来控制前述传输光纤跨段中的拉曼增益瞬变。

2. 发明授权

US06456426B1 Raman amplifiers with modulated pumps 有权
标题翻译：带调制泵的拉曼放大器
公开(公告)号：US06456426B1
公开(公告)日：2002-09-24
申请号：US09922920
申请日：2001-08-07
申请人： Maxim A. Bolshtyansky , Chien-Jen Chen , William S. Wong
发明人： Maxim A. Bolshtyansky , Chien-Jen Chen , William S. Wong
IPC分类号： H01S310
CPC分类号： H01S3/302 , G02B6/425 , H01S3/06754 , H01S3/094011 , H01S3/094076 , H01S3/094096 , H01S3/10007 , H04B10/2916
摘要： Optical amplifiers are provided in which optical gain is produced by Raman pumping fiber. The Raman-pumped fiber may be a span of transmission fiber or a coil of fiber in a discrete amplifier. Raman pump light may be provided using laser diodes operating at different wavelengths. The Raman pump light that is produced by the laser diodes may be modulated to reduce pump interactions in the fiber. Raman pump light may be modulated by directly modulating the laser diodes or by using optical components that modulate constant power pump light from the laser diodes.
摘要翻译：提供光放大器，其中通过拉曼泵浦光纤产生光增益。拉曼泵浦光纤可以是分立放大器中的传输光纤或光纤线圈的跨度。可以使用以不同波长工作的激光二极管来提供拉曼泵浦光。可以调制由激光二极管产生的拉曼泵浦光，以减少光纤中的泵相互作用。可以通过直接调制激光二极管或通过使用调制来自激光二极管的恒定功率泵浦光的光学部件来调制拉曼泵浦光。

3. 发明授权

US06417961B1 Optical amplifiers with dispersion compensation 有权
标题翻译：具有色散补偿的光放大器
公开(公告)号：US06417961B1
公开(公告)日：2002-07-09
申请号：US09727775
申请日：2000-12-04
申请人： Yan Sun , Chien-Jen Chen , William S. Wong
发明人： Yan Sun , Chien-Jen Chen , William S. Wong
IPC分类号： H01S300
CPC分类号： H01S3/302 , H01S3/06754 , H01S3/094011 , H01S3/10023
摘要： Optical amplifiers are provided that have dispersion-compensating fiber that is pumped with an optical source to produce Raman gain. Removable modules of dispersion-compensating fiber, which may be separate from the Raman-pumped dispersion-compensating fiber, may be used to adjust the amount of dispersion compensation provided by a given amplifier. The Raman pump may be formed using fiber-Bragg-grating-stabilized diode lasers or other suitable pump sources. Two cross-polarized diode lasers may be used for the Raman pump to reduce the dependence of the Raman gain on the polarization of the pump. If desired, the dispersion-compensating fiber may be Raman pumped using a two-pass configuration in which pump light reflects off of a reflector to produce additional gain. The reflector may be a Faraday rotator to minimize polarization-dependent pump effects.
摘要翻译：提供光放大器，其具有用光源泵浦以产生拉曼增益的色散补偿光纤。可以与拉曼泵浦色散补偿光纤分离的色散补偿光纤的可移除模块可用于调整由给定放大器提供的色散补偿量。拉曼泵可以使用光纤 - 布拉格光栅稳定的二极管激光器或其他合适的泵浦源来形成。两个交叉极化二极管激光器可用于拉曼泵，以减少拉曼增益对泵极化的依赖性。如果需要，色散补偿光纤可以是使用泵浦光从反射器反射以产生附加增益的双通配置泵浦的拉曼。反射器可以是法拉第旋转器，以最小化偏振相关的泵效应。

4. 发明授权

US06850360B1 Raman amplifier systems with diagnostic capabilities 有权
标题翻译：具有诊断功能的拉曼放大器系统
公开(公告)号：US06850360B1
公开(公告)日：2005-02-01
申请号：US09848725
申请日：2001-05-04
申请人： Chien-Jen Chen , William S. Wong
发明人： Chien-Jen Chen , William S. Wong
IPC分类号： H01S3/094 , H01S3/131 , H04B10/17 , H04B4/08 , H01S3/00
CPC分类号： H01S3/1312 , H01S3/094046 , H04B10/2916 , H04B2210/003
摘要： Fiber-optic communications systems are provided for optical communications networks. Fiber-optic communications links may be provided that use spans of transmission fiber to carry optical data signals on wavelength-division-multiplexing channels at different wavelengths. Raman pump light may be used to provide Raman amplification for the optical data signals. The Raman pump light may be used to make measurements on the spans of transmission fiber. Raman pump light may be modulated to make optical time domain reflectometry measurements and measurements of the Raman gain coefficient in the fiber. Information on the measurements made using the Raman pump light may be used to control the Raman pump light during operation of the communications link and may be provided to a network management system.
摘要翻译：为光通信网络提供光纤通信系统。可以提供使用传输光纤的跨度在不同波长的波分复用信道上承载光数据信号的光纤通信链路。可以使用拉曼泵浦光为光学数据信号提供拉曼放大。拉曼泵浦光可用于对传输光纤的跨度进行测量。可以调制拉曼泵浦光，以进行光时域反射测量和光纤中拉曼增益系数的测量。关于使用拉曼泵浦光进行的测量的信息可以用于在通信链路的操作期间控制拉曼泵浦光，并且可以将其提供给网络管理系统。

5. 发明授权

US06624927B1 Raman optical amplifiers 失效
标题翻译：拉曼光放大器
公开(公告)号：US06624927B1
公开(公告)日：2003-09-23
申请号：US09836549
申请日：2001-04-18
申请人： William S. Wong , Chien-Jen Chen , G. Victor Treyz
发明人： William S. Wong , Chien-Jen Chen , G. Victor Treyz
IPC分类号： H01S300
CPC分类号： H01S3/302 , H01S3/094003 , H01S3/094042
摘要： Raman amplifier equipment for fiber-optic communications links is provided. Raman pump light at a first wavelength or wavelengths may be used to optically pump fiber in a communications link to produce Raman gain. Raman pump light at a second wavelength or wavelengths may be used to optically pump the fiber to produce Raman gain for channels at different wavelengths in the communications link. The Raman gain produced by the pump light at the first wavelength or wavelengths increases the reach of the Raman pump light at the second wavelength or wavelengths into the fiber to improve the noise figure of the amplifier.
摘要翻译：提供了用于光纤通信链路的拉曼放大器设备。可以使用第一波长或波长的拉曼泵浦光在通信链路中光纤泵浦光纤以产生拉曼增益。可以使用第二波长或波长的拉曼泵浦光来光纤泵浦光纤以产生通信链路中不同波长的通道的拉曼增益。由第一波长或波长的泵浦光产生的拉曼增益增加了在第二波长或波长的拉曼泵浦光到达光纤的范围，以改善放大器的噪声系数。

6. 发明授权

US10066829B2 Electronic fabric 有权
公开(公告)号：US10066829B2
公开(公告)日：2018-09-04
申请号：US15139648
申请日：2016-04-27
申请人： William S. Wong , John S. Morreale
发明人： William S. Wong , John S. Morreale
IPC分类号： F21V33/00 , H05K1/03 , H05K1/18 , F21Y115/10 , F21Y107/70 , H05K1/11 , A41D27/08 , A41D1/00
摘要： An electronic fabric can include a first fabric layer, a second fabric layer, and a plurality of electronic devices. The first fabric layer can include a first set of conductive wires extending longitudinally in a first direction. The second fabric layer can define a plurality of apertures, can include a second set of conductive wires extending longitudinally in a second direction, and can be coupled to the first fabric layer such that each of the first set of conductive wires is arranged at a location of one of the plurality of apertures. Each electronic device can have a first terminal electrically coupled with one of the first set of conductive wires and a second terminal electrically coupled to one of the second set of conductive wires. The first terminal can be electrically coupled with the one of the first set of conductive wires through one of the plurality of apertures.

7. 发明授权

US08492876B2 Geometry and design for conformal electronics 有权
标题翻译：适形电子学的几何和设计
公开(公告)号：US08492876B2
公开(公告)日：2013-07-23
申请号：US12253390
申请日：2008-10-17
申请人： William S. Wong , Brent S. Krusor , Robert A. Street
发明人： William S. Wong , Brent S. Krusor , Robert A. Street
IPC分类号： H01L29/06
CPC分类号： H05K3/0044 , G02F2201/56 , H01L27/14603 , H01L27/14692 , H01L27/14812 , H01L29/78603
摘要： A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure. A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being arranged to as to increase a radius of curvature to meet a stress relief parameter when the substrate is shaped, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure. A three-dimensional electronic device having an electronic device formed on a flexible substrate, the flexible substrate formed into a three-dimensional structure, wedged-shaped portions removed from the substrate to allow the substrate to be formed into the three-dimensional structure, and a stress relief feature arranged adjacent to the wedge-shaped portions.
摘要翻译：形成三维电子器件的方法包括在二维柔性基板上形成至少一个电子器件，该电子器件根据三维结构形成，切割二维柔性基片，切割被设置成允许二维基底成形，切口具有至少一个应力消除特征，并且成形二维柔性基底以形成三维结构，应力消除特征被设置为减轻二维基底中的应力三维结构。形成三维电子器件的方法包括在二维柔性基板上形成至少一个电子器件，该电子器件根据三维结构形成，切割二维柔性基片，切割被布置成当基底成形时增加曲率半径以满足应力消除参数，并且将二维柔性基底成形以形成三维结构。一种具有形成在柔性基板上的电子器件的三维电子器件，形成为三维结构的柔性衬底，从衬底移除楔形部分以使衬底形成三维结构;以及紧邻楔形部分布置的应力消除特征。

8. 发明授权

US08411075B2 Large area electronic sheet and pixel circuits with disordered semiconductors for sensor actuator interface 有权
标题翻译：用于传感器执行器接口的大面积电子薄片和具有无序半导体的像素电路
公开(公告)号：US08411075B2
公开(公告)日：2013-04-02
申请号：US12206690
申请日：2008-09-08
申请人： Sanjiv Sambandan , William S. Wong , Robert A. Street
发明人： Sanjiv Sambandan , William S. Wong , Robert A. Street
IPC分类号： G06F3/038 , G06G5/00
CPC分类号： G06F3/038
摘要： A pixel circuit including a first transistor; a second transistor, the first transistor and the second transistor serially coupled between a first power supply terminal and a second power supply terminal; and a first capacitor coupled between a gate of the first transistor and a gate of the second transistor, and an electronic sheet including the same.
摘要翻译：一种像素电路，包括第一晶体管; 第二晶体管，第一晶体管和第二晶体管，串联耦合在第一电源端子和第二电源端子之间; 以及耦合在所述第一晶体管的栅极和所述第二晶体管的栅极之间的第一电容器以及包括所述第一晶体管的电子薄片。

9. 发明申请

US20120272196A1 Local Multivariable Solver for Optical Proximity Correction in Lithographic Processing Method, and Device Manufactured Thereby 有权
标题翻译：用于光刻接近校正的局部多变量求解器，以及由此制造的器件
公开(公告)号：US20120272196A1
公开(公告)日：2012-10-25
申请号：US13541638
申请日：2012-07-03
申请人： William S. Wong , Fei Liu , Been-Der Chen , Yen-Wen Lu
发明人： William S. Wong , Fei Liu , Been-Der Chen , Yen-Wen Lu
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A multivariable solver for proximity correction uses a Jacobian matrix to approximate effects of perturbations of segment locations in successive iterations of a design loop. The problem is formulated as a constrained minimization problem with box, linear equality, and linear inequality constraints. To improve computational efficiency, non-local interactions are ignored, which results in a sparse Jacobian matrix.
摘要翻译：用于近程校正的多变量求解器使用雅可比矩阵近似设计循环的连续迭代中的段位置的扰动效应。该问题被形成为具有框，线性等式和线性不等式约束的约束最小化问题。为了提高计算效率，忽略非局部相互作用，这导致了稀疏的雅可比矩阵。

10. 发明授权

US08154009B1 Light emitting structure including high-al content MQWH 有权
标题翻译：发光结构包括高含量的MQWH
公开(公告)号：US08154009B1
公开(公告)日：2012-04-10
申请号：US12435342
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L31/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

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